This work presents wide range of compact and reliable single-pole-multi-throw (SPMT) radio freque... more This work presents wide range of compact and reliable single-pole-multi-throw (SPMT) radio frequency (RF) microelectromechanical system (MEMS) switches where the M (output) varies from 3 to 14 throws. The single dc-contact switch dimensions are 0.144 mm × 0.29 mm which are fabricated on 635 μm alumina substrate using a surface micromachining process. SPMT switching networks demonstrate a measured return loss of more than 14 dB, a worst case insertion loss of ~1.76 dB and isolation of ~14.5 dB up to 12 GHz. The maximum area of the fabricated SPMT switch is ~1.2 mm2. The SPMT switches are capable of handling 1 W of RF power up to >1 billion cycles at 25 °C, and sustained even up to >80 million cycles with 0.5 W at 85 °C. To the best of our knowledge, this is the first reported wide range of MEMS SPMT switches and their respective performance evaluations in the literature that has undergone extensive measurement stages.
This paper presents a radio frequency micro-electromechanical system (RF MEMS) based 3-bit phase ... more This paper presents a radio frequency micro-electromechanical system (RF MEMS) based 3-bit phase shifter using MEMS single-pole-eight-throw (SP8T) switches. Devices are fabricated on 635 μm alumina substrate utilizing on the coplanar waveguide (CPW) transmission line. Single switch dimensions are 0.14 × 0.23 mm2 which is much smaller than Si-on-insulator switches. The symmetric and compact SP8T switch is the primary building block of the 3-bit phase shifter. The SP8T switch results in isolation levels of 31–15 dB, return loss of 33–18 dB and insertion loss of 0.6–1.9 dB, respectively, at 26–40 GHz. Later, two SP8T switches are connected back to back to develop the 3-bit phase shifter using different delay lines at 35 GHz. Finally, the phase shifter provides average return loss of better than 14 dB and average insertion loss of 4.4 dB over the 34.75–35.25 GHz. Measured average phase error is less than 0.98° at 35 GHz. The total area of the fabricated 3-bit phase shifter is 5.95 mm2. SP8T switches are capable of handling 0.1–1 W of power up to 100 million cycles which is sufficient power handling capability for wireless communication systems. Reliability of the phase shifter is extensively characterized with different incident RF powers at room temperature (25°C) and discussed in detail. To the best of the authors’ knowledge, this is the first reported MEMS 3-bit phase shifter in the literature that has used a minimum number of switching elements per phase state.
Journal of Micromechanics and Microengineering, 2014
ABSTRACT A radio frequency micro-electro-mechanical system (RF-MEMS) 5 bit phase shifter based on... more ABSTRACT A radio frequency micro-electro-mechanical system (RF-MEMS) 5 bit phase shifter based on a distributed MEMS transmission line concept with excellent phase accuracy and good repeatability is presented in this paper. The phase shifter is built with three fixed–fixed beams; one is switchable with electrostatic actuation and the other two are fixed for a metal–air–metal (MAM) capacitor. The design is based on a coplanar waveguide (CPW) configuration using alumina substrate. Gold-based surface micromachining is used to develop the individual primary phase bits (11.25°/22.5°/45°/90°/180°), which are fundamental building blocks of the complete 5 bit phase shifter. All of the primary phase bits are cascaded together to build the complete phase shifter. Detailed design methodology and performance analysis of the unit cell phase shifter has been carried out with structural and parametric optimization using an in-line bridge and MAM capacitors. The mechanical, electrical, transient, intermodulation distortion (IMD), temperature distribution, power handling and loss performances of the MEMS bridge have been experimentally obtained and validated using simulations up to reasonable extent. A single unit cell is able to provide 31 dB return loss, maximum insertion loss of 0.085 dB and a differential phase shift of 5.95° (at 10 GHz) over the band of interest. Furthermore, all primary phase bits are individually tested to ensure overall optimum phase shifter performance. The complete 5 bit phase shifter demonstrates an average insertion loss of 4.72 dB with return loss of better than 12 dB within 8–12 GHz using periodic placement of 62 unit cells and a maximum phase error of ±3.2° has been obtained at 10 GHz. Finally, the x-band 5 bit phase shifter is compared with the present state-of-the-art. The performance of the 5 bit phase shifter when mounted inside a test jig has been experimentally investigated and the results are presented. The total area of the phase shifter is 19.4 mm2. To the best of our knowledge, this is the first reported digital distributed MEMS transmission line type RF-MEMS phase shifter that has undergone different reliability stages.
This paper presents a frequency tunable 5-bit true-time-delay digital phase shifter using the rad... more This paper presents a frequency tunable 5-bit true-time-delay digital phase shifter using the radio frequency micro-electromechanical system (RFMEMS) technology. The phase shifter is based on distributed MEMS transmission line (DMTL) concept utilizing MEMS varactor. Bridge actuation mechanism followed by capacitance variation is the main source of frequency tuning in this work. Two stages of actuation mechanisms (push and pull) are used to achieve 2:1 tuning ratio. Accurate control of actuation voltage between pull to push stage contributes differential phase shift over the band of interest. Functional behavior of the push-pull actuation over the phase shifter application is theoretically established, experimentally investigated and validated with simulation. The phase shifter is fabricated monolithically using gold based surface micro-machining process on an alumina substrate. The individual primary phase-bits (11.250/22.50/450/900/1800) that are fundamental building blocks of complete 5-bit phase shifter are designed, fabricated and experimentally characterized from 10-25 GHz for specific applications. Finally, complete 5-bit phase shifter demonstrates an average phase error of 4.320, 2.80, 10 and 1.580, average insertion loss of 3.76, 4.1, 4.2 and 4.84 dB and average return loss of 11.7, 12, 14 and 11.8 dB at 10, 12, 17.2 and 25 GHz, respectively. To the best of the authors’ knowledge, this is the first reported band tunable stand alone 5-bit phase shifter in the literature which can work over the large spectrum for different applications. Total area of the 5-bit phase shifter is 15.6 mm2. Furthermore, cold-switched reliability on the unit cell and complete 5-bit MEMS phase shifter are extensively investigated and presented.
This work presents a Ku-band micro-electromechanical system (MEMS) based 5-bit phase shifter usin... more This work presents a Ku-band micro-electromechanical system (MEMS) based 5-bit phase shifter using dc contact single-pole-four-throw (SP4T) and single-pole-double-throw (SPDT) switches. The design is implemented using coplanar waveguide (CPW) transmission line. Two individual 2-bit and one 1-bit phase shifters are cascaded to develop the complete 5-bit phase shifter. The phase shifters are fabricated on 635-µm alumina substrate using surface micromachining process. The 5-bit phase shifter demonstrates an average insertion loss of 2.65 dB in the 13 - 18 GHz band with a return loss better than 22 dB and average phase error less than 0.680 at 17 GHz. Total area of the fabricated 5-bit phase shifter is 4.7 × 2.8 mm2. The reliability of the SPST and SP4T show more than 10 million cycles with an RF power of 0.1 – 2 W. Furthermore, reliability of the MEMS phase shifter is extensively investigated and presented with cold and hot switched conditions. To the best of our knowledge, this is the first reported MEMS 5-bit phase shifter in the literature that has undergone different reliability and qualification testing including 3-axis vibrations.
Radio frequency micro-electro-mechanical system (RF-MEMS) 5-bit phase shifter based on distribute... more Radio frequency micro-electro-mechanical system (RF-MEMS) 5-bit phase shifter based on distributed MEMS transmission line concept with excellent phase accuracy and good repeatability is presented in this paper. The phase shifter is built with three fixed to fixed beams, one is switchable with electrostatic actuation and other two are fixed for metal air metal (MAM) capacitor. The design is based on coplanar waveguide (CPW) configuration using alumina substrate. Gold based surface micromachining is used to develop the individual primary phase bits (11.250/22.50/450/900/1800) which are fundamental building blocks of complete 5-bit phase shifter. Later, all primary phase bits are cascaded together to build the complete phase shifter. Detailed design methodology and performance analysis of the unit cell phase shifter has been carried out with structural and parametric optimization using in-line bridge and MAM capacitor. The mechanical, electrical, transient, intermodulation distortion (IMD), temperature distribution, power handling and loss performance of the MEMS bridge have been experimentally obtained and validated using simulations up to reasonable extent. A single unit cell is able to provide 31 dB return loss, maximum insertion loss of 0.085 dB and a differential phase shift of 5.950 ( at 10 GHz) over the band of interest. Furthermore, all primary phase bits are individually tested to ensure overall optimum phase shifter performance. Complete 5-bit phase shifter demonstrates an average insertion loss of 4.72 dB with return loss of better than 12 dB within 8 -12 GHz using periodic placement of 62 unit cells. The maximum phase error of ± 3.20 has been obtained at 10 GHz from the reported 5-bit phase shifter. Finally, X-band 5-bit phase shifter is compared with the present state-of-the-art. The 5-bit phase shifter performance mounted inside a test jig has been experimentally investigated and results are presented. Total area of the phase shifter is 19.4 mm2. To the best of our knowledge, this is the first reported digital DMTL type RF MEMS phase shifter that has undergone under different reliability stages.
A radio frequency micro-electro-mechanical system (RF-MEMS) phase shifter based on switchable del... more A radio frequency micro-electro-mechanical system (RF-MEMS) phase shifter based on switchable delay line concept with maximum desirable phase shift and good reliability is presented in this paper. The phase shifter is based on the switchable reference and delay line configurations with inline metal contact series switches that employs MEMS systems based on electrostatic actuation and implemented using coplanar waveguide (CPW) configuration. Electromechanical behaviour of the MEMS switch has been extensively investigated using commercially available simulation tools and validated using system level simulation. A detailed design and performance analysis of the phase shifter has been carried out as a function of various structural parameters with reference to the gold-based surface micromachining process on alumina substrate. The mechanical, electrical, transient, intermodulation distortion (IMD) and loss performance of an MEMS switch have been experimentally investigated. The individual primary phase-bits (11.25◦/22.5◦/45◦/90◦/180◦) that are fundamental building blocks of a complete 5-bit phase shifter have been designed, fabricated and experimentally characterized. Furthermore, two different 5-bit switched-line phase shifters, that lead to 25% size reduction and result in marked improvement in the reliability of the complete 5-bit phase shifter with 30 V actuation voltage, have been developed. The performance comparison between two different CPW-based switched-line phase shifters have been extensively investigated and validated. The complete 5-bit phase shifter demonstrates an average insertion loss of 5.4 dB with a return loss of better than 14 dB at 17.25 GHz. The maximum phase error of 1.3◦ has been obtained at 17.25 GHz from these 5-bit phase shifters.
2013 IEEE International Conference on Microwaves, Communications, Antennas and Electronic Systems (COMCAS 2013), 2013
ABSTRACT Design and development of a metal contact switch that employs micro electromechanical sy... more ABSTRACT Design and development of a metal contact switch that employs micro electromechanical systems (MEMS) based on electrostatic actuation and implemented using a coplanar waveguide (CPW) with three switch cells is presented. The design is based on the series-shunt switch configuration. The main objective of the present design is to achieve high isolation up to 12GHz frequency (X-band). The dimensions of the MEMS switch have been optimized with finite element method based Coventor Ware software. The switch has been fabricated using gold based surface micromachining process. The mechanical response, electrical response, switching time, loss performance and Intermodulation distortions of the MEMS switch have been experimentally investigated. Return loss better than 15dB and isolation greater than 60dB have been experimentally obtained upto 12GHz from the fabricated switch.
IEEE MTT-S International Microwave and RF Conference, 2013
ABSTRACT The design, development and characterization of single-pole-double-through (SPDT) switch... more ABSTRACT The design, development and characterization of single-pole-double-through (SPDT) switch using micro electromechanical systems based inline-metal contact switch is presented in this paper. The switch employs electrostatic actuation and is implemented using coplanar waveguide. The design is based on the series-shunt configuration consisting of six cantilever type switches. The main objective of the present study is to achieve high-isolation, good input/output match, low insertion loss and small size to fit into Ku-band transmit/receive module. The device has been fabricated using gold based surface micromachining process. The mechanical, electrical, transient, intermodulation distortion and loss performance of MEMS switch have been experimentally investigated and validated. Measured return loss of better than 22dB with worst case insertion loss of 1.4 dB and isolation greater than 45dB have been experimentally achieved from SPDT switch over 13-17 GHz. The total switch area is 1.25 mm2. The performance of the switch is finally compared with the present state-of-the-art.
This work presents wide range of compact and reliable single-pole-multi-throw (SPMT) radio freque... more This work presents wide range of compact and reliable single-pole-multi-throw (SPMT) radio frequency (RF) microelectromechanical system (MEMS) switches where the M (output) varies from 3 to 14 throws. The single dc-contact switch dimensions are 0.144 mm × 0.29 mm which are fabricated on 635 μm alumina substrate using a surface micromachining process. SPMT switching networks demonstrate a measured return loss of more than 14 dB, a worst case insertion loss of ~1.76 dB and isolation of ~14.5 dB up to 12 GHz. The maximum area of the fabricated SPMT switch is ~1.2 mm2. The SPMT switches are capable of handling 1 W of RF power up to >1 billion cycles at 25 °C, and sustained even up to >80 million cycles with 0.5 W at 85 °C. To the best of our knowledge, this is the first reported wide range of MEMS SPMT switches and their respective performance evaluations in the literature that has undergone extensive measurement stages.
This paper presents a radio frequency micro-electromechanical system (RF MEMS) based 3-bit phase ... more This paper presents a radio frequency micro-electromechanical system (RF MEMS) based 3-bit phase shifter using MEMS single-pole-eight-throw (SP8T) switches. Devices are fabricated on 635 μm alumina substrate utilizing on the coplanar waveguide (CPW) transmission line. Single switch dimensions are 0.14 × 0.23 mm2 which is much smaller than Si-on-insulator switches. The symmetric and compact SP8T switch is the primary building block of the 3-bit phase shifter. The SP8T switch results in isolation levels of 31–15 dB, return loss of 33–18 dB and insertion loss of 0.6–1.9 dB, respectively, at 26–40 GHz. Later, two SP8T switches are connected back to back to develop the 3-bit phase shifter using different delay lines at 35 GHz. Finally, the phase shifter provides average return loss of better than 14 dB and average insertion loss of 4.4 dB over the 34.75–35.25 GHz. Measured average phase error is less than 0.98° at 35 GHz. The total area of the fabricated 3-bit phase shifter is 5.95 mm2. SP8T switches are capable of handling 0.1–1 W of power up to 100 million cycles which is sufficient power handling capability for wireless communication systems. Reliability of the phase shifter is extensively characterized with different incident RF powers at room temperature (25°C) and discussed in detail. To the best of the authors’ knowledge, this is the first reported MEMS 3-bit phase shifter in the literature that has used a minimum number of switching elements per phase state.
Journal of Micromechanics and Microengineering, 2014
ABSTRACT A radio frequency micro-electro-mechanical system (RF-MEMS) 5 bit phase shifter based on... more ABSTRACT A radio frequency micro-electro-mechanical system (RF-MEMS) 5 bit phase shifter based on a distributed MEMS transmission line concept with excellent phase accuracy and good repeatability is presented in this paper. The phase shifter is built with three fixed–fixed beams; one is switchable with electrostatic actuation and the other two are fixed for a metal–air–metal (MAM) capacitor. The design is based on a coplanar waveguide (CPW) configuration using alumina substrate. Gold-based surface micromachining is used to develop the individual primary phase bits (11.25°/22.5°/45°/90°/180°), which are fundamental building blocks of the complete 5 bit phase shifter. All of the primary phase bits are cascaded together to build the complete phase shifter. Detailed design methodology and performance analysis of the unit cell phase shifter has been carried out with structural and parametric optimization using an in-line bridge and MAM capacitors. The mechanical, electrical, transient, intermodulation distortion (IMD), temperature distribution, power handling and loss performances of the MEMS bridge have been experimentally obtained and validated using simulations up to reasonable extent. A single unit cell is able to provide 31 dB return loss, maximum insertion loss of 0.085 dB and a differential phase shift of 5.95° (at 10 GHz) over the band of interest. Furthermore, all primary phase bits are individually tested to ensure overall optimum phase shifter performance. The complete 5 bit phase shifter demonstrates an average insertion loss of 4.72 dB with return loss of better than 12 dB within 8–12 GHz using periodic placement of 62 unit cells and a maximum phase error of ±3.2° has been obtained at 10 GHz. Finally, the x-band 5 bit phase shifter is compared with the present state-of-the-art. The performance of the 5 bit phase shifter when mounted inside a test jig has been experimentally investigated and the results are presented. The total area of the phase shifter is 19.4 mm2. To the best of our knowledge, this is the first reported digital distributed MEMS transmission line type RF-MEMS phase shifter that has undergone different reliability stages.
This paper presents a frequency tunable 5-bit true-time-delay digital phase shifter using the rad... more This paper presents a frequency tunable 5-bit true-time-delay digital phase shifter using the radio frequency micro-electromechanical system (RFMEMS) technology. The phase shifter is based on distributed MEMS transmission line (DMTL) concept utilizing MEMS varactor. Bridge actuation mechanism followed by capacitance variation is the main source of frequency tuning in this work. Two stages of actuation mechanisms (push and pull) are used to achieve 2:1 tuning ratio. Accurate control of actuation voltage between pull to push stage contributes differential phase shift over the band of interest. Functional behavior of the push-pull actuation over the phase shifter application is theoretically established, experimentally investigated and validated with simulation. The phase shifter is fabricated monolithically using gold based surface micro-machining process on an alumina substrate. The individual primary phase-bits (11.250/22.50/450/900/1800) that are fundamental building blocks of complete 5-bit phase shifter are designed, fabricated and experimentally characterized from 10-25 GHz for specific applications. Finally, complete 5-bit phase shifter demonstrates an average phase error of 4.320, 2.80, 10 and 1.580, average insertion loss of 3.76, 4.1, 4.2 and 4.84 dB and average return loss of 11.7, 12, 14 and 11.8 dB at 10, 12, 17.2 and 25 GHz, respectively. To the best of the authors’ knowledge, this is the first reported band tunable stand alone 5-bit phase shifter in the literature which can work over the large spectrum for different applications. Total area of the 5-bit phase shifter is 15.6 mm2. Furthermore, cold-switched reliability on the unit cell and complete 5-bit MEMS phase shifter are extensively investigated and presented.
This work presents a Ku-band micro-electromechanical system (MEMS) based 5-bit phase shifter usin... more This work presents a Ku-band micro-electromechanical system (MEMS) based 5-bit phase shifter using dc contact single-pole-four-throw (SP4T) and single-pole-double-throw (SPDT) switches. The design is implemented using coplanar waveguide (CPW) transmission line. Two individual 2-bit and one 1-bit phase shifters are cascaded to develop the complete 5-bit phase shifter. The phase shifters are fabricated on 635-µm alumina substrate using surface micromachining process. The 5-bit phase shifter demonstrates an average insertion loss of 2.65 dB in the 13 - 18 GHz band with a return loss better than 22 dB and average phase error less than 0.680 at 17 GHz. Total area of the fabricated 5-bit phase shifter is 4.7 × 2.8 mm2. The reliability of the SPST and SP4T show more than 10 million cycles with an RF power of 0.1 – 2 W. Furthermore, reliability of the MEMS phase shifter is extensively investigated and presented with cold and hot switched conditions. To the best of our knowledge, this is the first reported MEMS 5-bit phase shifter in the literature that has undergone different reliability and qualification testing including 3-axis vibrations.
Radio frequency micro-electro-mechanical system (RF-MEMS) 5-bit phase shifter based on distribute... more Radio frequency micro-electro-mechanical system (RF-MEMS) 5-bit phase shifter based on distributed MEMS transmission line concept with excellent phase accuracy and good repeatability is presented in this paper. The phase shifter is built with three fixed to fixed beams, one is switchable with electrostatic actuation and other two are fixed for metal air metal (MAM) capacitor. The design is based on coplanar waveguide (CPW) configuration using alumina substrate. Gold based surface micromachining is used to develop the individual primary phase bits (11.250/22.50/450/900/1800) which are fundamental building blocks of complete 5-bit phase shifter. Later, all primary phase bits are cascaded together to build the complete phase shifter. Detailed design methodology and performance analysis of the unit cell phase shifter has been carried out with structural and parametric optimization using in-line bridge and MAM capacitor. The mechanical, electrical, transient, intermodulation distortion (IMD), temperature distribution, power handling and loss performance of the MEMS bridge have been experimentally obtained and validated using simulations up to reasonable extent. A single unit cell is able to provide 31 dB return loss, maximum insertion loss of 0.085 dB and a differential phase shift of 5.950 ( at 10 GHz) over the band of interest. Furthermore, all primary phase bits are individually tested to ensure overall optimum phase shifter performance. Complete 5-bit phase shifter demonstrates an average insertion loss of 4.72 dB with return loss of better than 12 dB within 8 -12 GHz using periodic placement of 62 unit cells. The maximum phase error of ± 3.20 has been obtained at 10 GHz from the reported 5-bit phase shifter. Finally, X-band 5-bit phase shifter is compared with the present state-of-the-art. The 5-bit phase shifter performance mounted inside a test jig has been experimentally investigated and results are presented. Total area of the phase shifter is 19.4 mm2. To the best of our knowledge, this is the first reported digital DMTL type RF MEMS phase shifter that has undergone under different reliability stages.
A radio frequency micro-electro-mechanical system (RF-MEMS) phase shifter based on switchable del... more A radio frequency micro-electro-mechanical system (RF-MEMS) phase shifter based on switchable delay line concept with maximum desirable phase shift and good reliability is presented in this paper. The phase shifter is based on the switchable reference and delay line configurations with inline metal contact series switches that employs MEMS systems based on electrostatic actuation and implemented using coplanar waveguide (CPW) configuration. Electromechanical behaviour of the MEMS switch has been extensively investigated using commercially available simulation tools and validated using system level simulation. A detailed design and performance analysis of the phase shifter has been carried out as a function of various structural parameters with reference to the gold-based surface micromachining process on alumina substrate. The mechanical, electrical, transient, intermodulation distortion (IMD) and loss performance of an MEMS switch have been experimentally investigated. The individual primary phase-bits (11.25◦/22.5◦/45◦/90◦/180◦) that are fundamental building blocks of a complete 5-bit phase shifter have been designed, fabricated and experimentally characterized. Furthermore, two different 5-bit switched-line phase shifters, that lead to 25% size reduction and result in marked improvement in the reliability of the complete 5-bit phase shifter with 30 V actuation voltage, have been developed. The performance comparison between two different CPW-based switched-line phase shifters have been extensively investigated and validated. The complete 5-bit phase shifter demonstrates an average insertion loss of 5.4 dB with a return loss of better than 14 dB at 17.25 GHz. The maximum phase error of 1.3◦ has been obtained at 17.25 GHz from these 5-bit phase shifters.
2013 IEEE International Conference on Microwaves, Communications, Antennas and Electronic Systems (COMCAS 2013), 2013
ABSTRACT Design and development of a metal contact switch that employs micro electromechanical sy... more ABSTRACT Design and development of a metal contact switch that employs micro electromechanical systems (MEMS) based on electrostatic actuation and implemented using a coplanar waveguide (CPW) with three switch cells is presented. The design is based on the series-shunt switch configuration. The main objective of the present design is to achieve high isolation up to 12GHz frequency (X-band). The dimensions of the MEMS switch have been optimized with finite element method based Coventor Ware software. The switch has been fabricated using gold based surface micromachining process. The mechanical response, electrical response, switching time, loss performance and Intermodulation distortions of the MEMS switch have been experimentally investigated. Return loss better than 15dB and isolation greater than 60dB have been experimentally obtained upto 12GHz from the fabricated switch.
IEEE MTT-S International Microwave and RF Conference, 2013
ABSTRACT The design, development and characterization of single-pole-double-through (SPDT) switch... more ABSTRACT The design, development and characterization of single-pole-double-through (SPDT) switch using micro electromechanical systems based inline-metal contact switch is presented in this paper. The switch employs electrostatic actuation and is implemented using coplanar waveguide. The design is based on the series-shunt configuration consisting of six cantilever type switches. The main objective of the present study is to achieve high-isolation, good input/output match, low insertion loss and small size to fit into Ku-band transmit/receive module. The device has been fabricated using gold based surface micromachining process. The mechanical, electrical, transient, intermodulation distortion and loss performance of MEMS switch have been experimentally investigated and validated. Measured return loss of better than 22dB with worst case insertion loss of 1.4 dB and isolation greater than 45dB have been experimentally achieved from SPDT switch over 13-17 GHz. The total switch area is 1.25 mm2. The performance of the switch is finally compared with the present state-of-the-art.
Uploads
Papers by Sukomal Dey
are fabricated on 635 μm alumina substrate using a surface micromachining process. SPMT switching networks demonstrate a measured return loss of more than 14 dB, a worst case insertion loss of ~1.76 dB and isolation of ~14.5 dB up to 12 GHz. The maximum area of the fabricated SPMT switch is ~1.2 mm2. The SPMT switches are capable of handling 1 W of RF power up to >1 billion cycles at 25 °C, and sustained even up to >80 million cycles with 0.5 W at 85 °C. To the best of our knowledge, this is the first reported wide range of MEMS SPMT switches and their respective performance evaluations in the literature that has undergone extensive measurement stages.
SP8T switches are connected back to back to develop the 3-bit phase shifter using different delay lines at 35 GHz. Finally, the phase shifter provides average return loss of better than 14 dB and average insertion loss of 4.4 dB over the 34.75–35.25 GHz. Measured average
phase error is less than 0.98° at 35 GHz. The total area of the fabricated 3-bit phase shifter is 5.95 mm2. SP8T switches are capable of handling 0.1–1 W of power up to 100 million cycles which is sufficient power handling capability for wireless communication systems. Reliability
of the phase shifter is extensively characterized with different incident RF powers at room temperature (25°C) and discussed in detail. To the best of the authors’ knowledge, this is the first reported MEMS 3-bit phase shifter in the literature that has used a minimum number of
switching elements per phase state.
individual primary phase-bits (11.25◦/22.5◦/45◦/90◦/180◦) that are fundamental building blocks of a complete 5-bit phase shifter have been designed, fabricated and experimentally
characterized. Furthermore, two different 5-bit switched-line phase shifters, that lead to 25% size reduction and result in marked improvement in the reliability of the complete 5-bit phase shifter with 30 V actuation voltage, have been developed. The performance comparison between two different CPW-based switched-line phase shifters have been extensively investigated and validated. The complete 5-bit phase shifter demonstrates an average insertion loss of 5.4 dB with a return loss of better than 14 dB at 17.25 GHz. The maximum phase error of 1.3◦ has been obtained at 17.25 GHz from these 5-bit phase shifters.
are fabricated on 635 μm alumina substrate using a surface micromachining process. SPMT switching networks demonstrate a measured return loss of more than 14 dB, a worst case insertion loss of ~1.76 dB and isolation of ~14.5 dB up to 12 GHz. The maximum area of the fabricated SPMT switch is ~1.2 mm2. The SPMT switches are capable of handling 1 W of RF power up to >1 billion cycles at 25 °C, and sustained even up to >80 million cycles with 0.5 W at 85 °C. To the best of our knowledge, this is the first reported wide range of MEMS SPMT switches and their respective performance evaluations in the literature that has undergone extensive measurement stages.
SP8T switches are connected back to back to develop the 3-bit phase shifter using different delay lines at 35 GHz. Finally, the phase shifter provides average return loss of better than 14 dB and average insertion loss of 4.4 dB over the 34.75–35.25 GHz. Measured average
phase error is less than 0.98° at 35 GHz. The total area of the fabricated 3-bit phase shifter is 5.95 mm2. SP8T switches are capable of handling 0.1–1 W of power up to 100 million cycles which is sufficient power handling capability for wireless communication systems. Reliability
of the phase shifter is extensively characterized with different incident RF powers at room temperature (25°C) and discussed in detail. To the best of the authors’ knowledge, this is the first reported MEMS 3-bit phase shifter in the literature that has used a minimum number of
switching elements per phase state.
individual primary phase-bits (11.25◦/22.5◦/45◦/90◦/180◦) that are fundamental building blocks of a complete 5-bit phase shifter have been designed, fabricated and experimentally
characterized. Furthermore, two different 5-bit switched-line phase shifters, that lead to 25% size reduction and result in marked improvement in the reliability of the complete 5-bit phase shifter with 30 V actuation voltage, have been developed. The performance comparison between two different CPW-based switched-line phase shifters have been extensively investigated and validated. The complete 5-bit phase shifter demonstrates an average insertion loss of 5.4 dB with a return loss of better than 14 dB at 17.25 GHz. The maximum phase error of 1.3◦ has been obtained at 17.25 GHz from these 5-bit phase shifters.