Bulletin of the American Physical Society, Mar 12, 2008
The effect of bandstructrue on the electronic transport properties of nanowire devices is investi... more The effect of bandstructrue on the electronic transport properties of nanowire devices is investigated using the sp3d5s*-SO 20-orbital nearest neighbor tight-binding model with spin-orbit interactions (LCAO), self consistently coupled to a Poisson solver for treatment of the electrostatics. Under strong spatial and electrostatic confinement at the nanoscale, atomistic effects become important. Non-parabolicity, anisotropy, band coupling, and valley splitting are evident in the electronic structure of these devices and strongly influence their ...
The antisymmetric component is completely trapped between x = 0 and x = L and cannot propagate in... more The antisymmetric component is completely trapped between x = 0 and x = L and cannot propagate in the two end regions with enhanced tunneling. Assuming that the re-flection coefficient for the antisymmetric state is — 1 at ei-ther end we get from Eq. (12) Сs (0) Su St2 lc + (L)J ...
The device physics of nanoscale MOSFETs is explored by numerical simulations of a model transisto... more The device physics of nanoscale MOSFETs is explored by numerical simulations of a model transistor. The physics of charge control, source velocity saturation due to thermal injection, and scattering in ultrasmall devices are examined. The results show that the essential physics of nanoscale MOSFETs can be understood in terms of a conceptually simple scattering model
The Landauer approach provides a conceptually simple way to calculate the intrinsic thermoelectri... more The Landauer approach provides a conceptually simple way to calculate the intrinsic thermoelectric (TE) parameters of materials from the ballistic to the diffusive transport regime. The approach relies on the calculation of the number of propagating modes and the mean free path for each mode. The modes are calculated from the energy dispersion (E (k)) of the materials, which require heavy computation and are often restricted to energy relations on sparse momentum (k) grids. Here an efficient method to calculate ...
Page 1. IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. ED-33, NO. 7, JULY 1986 88 1 Monte Carlo Eval... more Page 1. IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. ED-33, NO. 7, JULY 1986 88 1 Monte Carlo Evaluation of Electron Transport in ... Page 2. 882 IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. ED-33, NO. I, JULY 1986 ...
Bulletin of the American Physical Society, Mar 12, 2008
The effect of bandstructrue on the electronic transport properties of nanowire devices is investi... more The effect of bandstructrue on the electronic transport properties of nanowire devices is investigated using the sp3d5s*-SO 20-orbital nearest neighbor tight-binding model with spin-orbit interactions (LCAO), self consistently coupled to a Poisson solver for treatment of the electrostatics. Under strong spatial and electrostatic confinement at the nanoscale, atomistic effects become important. Non-parabolicity, anisotropy, band coupling, and valley splitting are evident in the electronic structure of these devices and strongly influence their ...
The antisymmetric component is completely trapped between x = 0 and x = L and cannot propagate in... more The antisymmetric component is completely trapped between x = 0 and x = L and cannot propagate in the two end regions with enhanced tunneling. Assuming that the re-flection coefficient for the antisymmetric state is — 1 at ei-ther end we get from Eq. (12) Сs (0) Su St2 lc + (L)J ...
The device physics of nanoscale MOSFETs is explored by numerical simulations of a model transisto... more The device physics of nanoscale MOSFETs is explored by numerical simulations of a model transistor. The physics of charge control, source velocity saturation due to thermal injection, and scattering in ultrasmall devices are examined. The results show that the essential physics of nanoscale MOSFETs can be understood in terms of a conceptually simple scattering model
The Landauer approach provides a conceptually simple way to calculate the intrinsic thermoelectri... more The Landauer approach provides a conceptually simple way to calculate the intrinsic thermoelectric (TE) parameters of materials from the ballistic to the diffusive transport regime. The approach relies on the calculation of the number of propagating modes and the mean free path for each mode. The modes are calculated from the energy dispersion (E (k)) of the materials, which require heavy computation and are often restricted to energy relations on sparse momentum (k) grids. Here an efficient method to calculate ...
Page 1. IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. ED-33, NO. 7, JULY 1986 88 1 Monte Carlo Eval... more Page 1. IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. ED-33, NO. 7, JULY 1986 88 1 Monte Carlo Evaluation of Electron Transport in ... Page 2. 882 IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. ED-33, NO. I, JULY 1986 ...
Uploads