A systematic study of GaAs/InxGa1-xAs single quantum wells is performed in two sets of samples with different alloy concentrations (namely, x=9% and 18.5%) and well thicknesses ranging from 15 to 250 Å. These samples are grown by the... more
A systematic study of GaAs/InxGa1-xAs single quantum wells is performed in two sets of samples with different alloy concentrations (namely, x=9% and 18.5%) and well thicknesses ranging from 15 to 250 Å. These samples are grown by the molecular-beam-epitaxy facility and characterized by ``normalized reflection spectroscopy.'' Accurate calculations of exciton energies are computed in the effective-mass approximation by a variational
