Http Dx Doi Org 10 1080 01468030902833284, Jun 16, 2009
ABSTRACT In this article, we derive a new SPICE equivalent-circuit model, using the rate equation... more ABSTRACT In this article, we derive a new SPICE equivalent-circuit model, using the rate equations for a separate confinement heterostructure quantum well laser. In this model, based on physical principles, the frequency chirping phenomenon has been incorporated by the introduction of an exact carrier-dependent linewidth enhancement factor for quantum well lasers. The effects of different separate confinement heterostructure layer lengths and carrier transport effects on the transient and modulation responses are also analyzed through this new model.
2008 3rd International Conference on Information and Communication Technologies: From Theory to Applications, 2008
... M .R. Abbasi Department of Electrical Engineering, Shiraz University Shiraz University Shiraz... more ... M .R. Abbasi Department of Electrical Engineering, Shiraz University Shiraz University Shiraz, Iran email:mohammadrezaabb@gmail.com MH Sheikhi Department of Electrical Engineering,Shiraz University Shiraz University Shiraz, Iran msheikhi@shirazu.ac.ir ... p n n − −= τ (2) ...
Proceedings of CAOL'2003. 1st International Conference on Advanced Optoelectronics and Lasers. Jontly with 1st Workshop on Precision Oscillations in Electronics and Optics (IEEE Cat. No.03EX715)
Ebrahim Mortazy', Vahid AI~nadi*&#x2... more Ebrahim Mortazy', Vahid AI~nadi*'~, M. K. Moravvej-Farshi Abbas Zarifiar' ... Iran Telecommunication Research Center (ITRC), P. 0. Box 14155-3961. Tehran. Iran, I ... Tel: 98-21-8007080, Fax: 98-21-8009930, Email: emvrtazy@ties. itu. int Departmen1 of Electrical Engineering, Tarbiat Mvdares Uiiiversiq, P. 0. Box I41 15- 143, Tehran, Iran Laser Research Center, AEOI, P. 0. Box 14395-836, Tehran, Iran, Tel: 98-21-8007395. Fax: 98-21-8006095 ... Abstract Intensity noise including Mode Partition Noise (MPN) and Mode Hopping Noise (MHN), and ...
Proceedings of CAOL'2003. 1st International Conference on Advanced Optoelectronics and Lasers. Jontly with 1st Workshop on Precision Oscillations in Electronics and Optics (IEEE Cat. No.03EX715)
ABSTRACT The impacts of gain compression and direct carrier transition on relative intensity nois... more ABSTRACT The impacts of gain compression and direct carrier transition on relative intensity noise (RIN) characteristics of 1.55 µm QD lasers have been investigated theoretically. The auto and cross correlation coefficients are calculated through small signal linearization of rate equations for carriers and photon numbers in presence of Langevin noise sources. Calculations reveal that gain nonlinearity reduces RIN level of QD lasers while increases damping factor. These results show good agreement with experimental measurements of RIN spectrum in 1.55 µm QD lasers which is flat up to 10 GHz. Evaluations demonstrate that among wetting layer, Quantum and Photon shot noises, the second and third one have essential role in overall value of RIN in both linear and nonlinear QD lasers. Moreover, calculations indicate that by increasing the direct carrier transition time, RIN level of auto and cross correlations resulted from wetting layer and ground state carriers increases. Finally, it is shown that the RIN level declines in nonlinear QD lasers by working at higher injection currents which is in confirmation with recent experimental reports. Though, it is demonstrated that considering nonlinear gain and direct carrier transition play essential role on correct modeling of RIN characteristics in 1.55 µm QD lasers.
Second IFIP International Conference on Wireless and Optical Communications Networks, 2005. WOCN 2005.
In this paper, we present a circuit model of noise for separate absorption, and multiplication av... more In this paper, we present a circuit model of noise for separate absorption, and multiplication avalanche photodiode (SAM-APD). Also a circuit model of SAM-APD is presented. It is based on the carrier rate equations in different region of device. As two examples, a GaAs and an InGaAs/InAlAs SAM-APD are simulated.
6th International Conference on Laser and Fiber-Optical Networks Modeling, 2004. Proceedings of LFNM 2004.
We present a circuit model for separate absorption, charge and multiplication avalanche photodiod... more We present a circuit model for separate absorption, charge and multiplication avalanche photodiode (SACM-APD). It is based on the carrier rate equations in the different regions of the device. Using the model we obtain the photocurrent, quantum efficiency, and dark current. As examples, GaAs and InGaAs/InAlAs SACM-APDs are simulated. There is a good correspondence between the simulation and experimental results.
A model based on the transfer matrix method (TMM), for the analysis of photon density distributio... more A model based on the transfer matrix method (TMM), for the analysis of photon density distribution in three section distributed Bragg reflector (DBR) Tunable Laser Diode, is presented. The key feature of the model is the use of modified oscillation condition. This model provides longitudinal distribution of photon density in each section of laser for different values of grating and
The effect of pumping methods on the gain and phase dynamics of quantum-dot vertical cavity semic... more The effect of pumping methods on the gain and phase dynamics of quantum-dot vertical cavity semiconductor optical amplifier is investigated. The gain and phase recovery time is considered at the ground state transition wavelength. By including the effect of the excited state and wetting layer on the refractive index change, it is shown that under electrical pumping, the better gain dynamics is achieved compared to the optical pumping scheme. However, the phase recovery time can be accelerated by optical pumping. These behaviors result from the different mechanisms of population inversion in these two pumping methods.
Http Dx Doi Org 10 1080 01468030902833284, Jun 16, 2009
ABSTRACT In this article, we derive a new SPICE equivalent-circuit model, using the rate equation... more ABSTRACT In this article, we derive a new SPICE equivalent-circuit model, using the rate equations for a separate confinement heterostructure quantum well laser. In this model, based on physical principles, the frequency chirping phenomenon has been incorporated by the introduction of an exact carrier-dependent linewidth enhancement factor for quantum well lasers. The effects of different separate confinement heterostructure layer lengths and carrier transport effects on the transient and modulation responses are also analyzed through this new model.
2008 3rd International Conference on Information and Communication Technologies: From Theory to Applications, 2008
... M .R. Abbasi Department of Electrical Engineering, Shiraz University Shiraz University Shiraz... more ... M .R. Abbasi Department of Electrical Engineering, Shiraz University Shiraz University Shiraz, Iran email:mohammadrezaabb@gmail.com MH Sheikhi Department of Electrical Engineering,Shiraz University Shiraz University Shiraz, Iran msheikhi@shirazu.ac.ir ... p n n − −= τ (2) ...
Proceedings of CAOL'2003. 1st International Conference on Advanced Optoelectronics and Lasers. Jontly with 1st Workshop on Precision Oscillations in Electronics and Optics (IEEE Cat. No.03EX715)
Ebrahim Mortazy', Vahid AI~nadi*&#x2... more Ebrahim Mortazy', Vahid AI~nadi*'~, M. K. Moravvej-Farshi Abbas Zarifiar' ... Iran Telecommunication Research Center (ITRC), P. 0. Box 14155-3961. Tehran. Iran, I ... Tel: 98-21-8007080, Fax: 98-21-8009930, Email: emvrtazy@ties. itu. int Departmen1 of Electrical Engineering, Tarbiat Mvdares Uiiiversiq, P. 0. Box I41 15- 143, Tehran, Iran Laser Research Center, AEOI, P. 0. Box 14395-836, Tehran, Iran, Tel: 98-21-8007395. Fax: 98-21-8006095 ... Abstract Intensity noise including Mode Partition Noise (MPN) and Mode Hopping Noise (MHN), and ...
Proceedings of CAOL'2003. 1st International Conference on Advanced Optoelectronics and Lasers. Jontly with 1st Workshop on Precision Oscillations in Electronics and Optics (IEEE Cat. No.03EX715)
ABSTRACT The impacts of gain compression and direct carrier transition on relative intensity nois... more ABSTRACT The impacts of gain compression and direct carrier transition on relative intensity noise (RIN) characteristics of 1.55 µm QD lasers have been investigated theoretically. The auto and cross correlation coefficients are calculated through small signal linearization of rate equations for carriers and photon numbers in presence of Langevin noise sources. Calculations reveal that gain nonlinearity reduces RIN level of QD lasers while increases damping factor. These results show good agreement with experimental measurements of RIN spectrum in 1.55 µm QD lasers which is flat up to 10 GHz. Evaluations demonstrate that among wetting layer, Quantum and Photon shot noises, the second and third one have essential role in overall value of RIN in both linear and nonlinear QD lasers. Moreover, calculations indicate that by increasing the direct carrier transition time, RIN level of auto and cross correlations resulted from wetting layer and ground state carriers increases. Finally, it is shown that the RIN level declines in nonlinear QD lasers by working at higher injection currents which is in confirmation with recent experimental reports. Though, it is demonstrated that considering nonlinear gain and direct carrier transition play essential role on correct modeling of RIN characteristics in 1.55 µm QD lasers.
Second IFIP International Conference on Wireless and Optical Communications Networks, 2005. WOCN 2005.
In this paper, we present a circuit model of noise for separate absorption, and multiplication av... more In this paper, we present a circuit model of noise for separate absorption, and multiplication avalanche photodiode (SAM-APD). Also a circuit model of SAM-APD is presented. It is based on the carrier rate equations in different region of device. As two examples, a GaAs and an InGaAs/InAlAs SAM-APD are simulated.
6th International Conference on Laser and Fiber-Optical Networks Modeling, 2004. Proceedings of LFNM 2004.
We present a circuit model for separate absorption, charge and multiplication avalanche photodiod... more We present a circuit model for separate absorption, charge and multiplication avalanche photodiode (SACM-APD). It is based on the carrier rate equations in the different regions of the device. Using the model we obtain the photocurrent, quantum efficiency, and dark current. As examples, GaAs and InGaAs/InAlAs SACM-APDs are simulated. There is a good correspondence between the simulation and experimental results.
A model based on the transfer matrix method (TMM), for the analysis of photon density distributio... more A model based on the transfer matrix method (TMM), for the analysis of photon density distribution in three section distributed Bragg reflector (DBR) Tunable Laser Diode, is presented. The key feature of the model is the use of modified oscillation condition. This model provides longitudinal distribution of photon density in each section of laser for different values of grating and
The effect of pumping methods on the gain and phase dynamics of quantum-dot vertical cavity semic... more The effect of pumping methods on the gain and phase dynamics of quantum-dot vertical cavity semiconductor optical amplifier is investigated. The gain and phase recovery time is considered at the ground state transition wavelength. By including the effect of the excited state and wetting layer on the refractive index change, it is shown that under electrical pumping, the better gain dynamics is achieved compared to the optical pumping scheme. However, the phase recovery time can be accelerated by optical pumping. These behaviors result from the different mechanisms of population inversion in these two pumping methods.
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Papers by Abbas Zarifkar