ABSTRACT The Silicon Photomultiplier (SiPM) is a novel pixelated photon detector able to detect s... more ABSTRACT The Silicon Photomultiplier (SiPM) is a novel pixelated photon detector able to detect single photon arrival with good timing resolution and high gain. In this work we present a complete study of the performances of different SiPMs produced by STMicroelectronics. Their potentialities and limits were identified using experimental measurements and electrical simulations performed both on single pixel and SiPM having up to ̃4000 pixels. SiPM was tested in different experiments such as photoluminescence emission measurement, lifetime measurement of semiconductor materials and light diffusion in highly scattering material in the near infrared spectrum showing its aptitude to replace PMT in those applications.
ABSTRACT The dark current behavior of the pixels forming the Si photomultiplier as a function of ... more ABSTRACT The dark current behavior of the pixels forming the Si photomultiplier as a function of the applied overvoltage and operation temperature is studied. The data are modeled by assuming that dark current is caused by current pulses triggered by events of diffusion of single minority carriers injected from the peripheral boundaries of the active area depletion layer and by thermal emission of carriers from Shockley–Read–Hall defects in the active area depletion layer.
Nuovo Cimento Della Societa Italiana Di Fisica C-Geophysics and Space Physics, 2007
AbstractDesign and characterization of a new generation of single-photon avalanche diodes (SPAD)... more AbstractDesign and characterization of a new generation of single-photon avalanche diodes (SPAD) array, manufactured by ST-Microelectronics in Catania, Italy, are presented. Device performances, investigated in several experimental conditions and here reported, ...
The characteristics of a new multidetector based on the use of Monolithic Silicon Telescopes are ... more The characteristics of a new multidetector based on the use of Monolithic Silicon Telescopes are presented. Using suitable ion implantation techniques, the DeltaE and residual energy stages of the telescopes have been integrated on a single Si chip, obtaining a typical thickness for the DeltaE stage of the order of 2mum.
2012 IEEE Nuclear Science Symposium and Medical Imaging Conference Record (NSS/MIC), 2012
ABSTRACT We continue our timing measurements of Silicon Photomultipliers (SiPM) at the picosecond... more ABSTRACT We continue our timing measurements of Silicon Photomultipliers (SiPM) at the picosecond level at Fermilab .. We using SiPMs readout based on Ortec system, also as on fast waveform digitizer DRS4 [1]. SiPM's signal pulse shape was investigated. The single photoelectron time resolution (SPTR) was measured for the signals coming from the SiPM's. Dependence of the SPTR on the SiPms size was measured. Results of the last test beam test with SiPMs are presented.
The characteristics of a new multidetector based on the use of Monolithic Silicon Telescopes are ... more The characteristics of a new multidetector based on the use of Monolithic Silicon Telescopes are presented. Using suitable ion implantation techniques, the DeltaE and residual energy stages of the telescopes have been integrated on a single Si chip, obtaining a typical thickness for the DeltaE stage of the order of 2mum.
AbstractIn this paper, we present the results of the charge and time characterization performed ... more AbstractIn this paper, we present the results of the charge and time characterization performed on our novel 100-channel silicon photomultiplier. We have improved our previous single-photon-avalanche-diode technology in order to set up a working device with outstanding ...
Design and characterization of a new generation of single-photon avalanche diodes (SPAD) array, m... more Design and characterization of a new generation of single-photon avalanche diodes (SPAD) array, manufactured by ST-Microelectronics in Catania, Italy, are presented. Device performances, investigated in several experimental conditions and here reported, demonstrate their suitability in many applications. SPADs are thin p-n junctions operating above the breakdown condition in Geiger mode at low voltage. In this regime a single charged carrier
Integration of III-V materials on silicon wafer for active photonic devices have previously been ... more Integration of III-V materials on silicon wafer for active photonic devices have previously been achieved by growing thick III-V layers on top of silicon or by bonding the III-V stack layers onto a silicon wafer. Another way is the epitaxial lateral overgrowth (ELOG) of a thin III-V material from a seed layer directly on the silicon wafer, which can be used as a platform for the growth of active devices. As a prestudy, we have investigated lateral overgrowth of InP by Hydride Vapor Phase Epitaxy (HVPE) over SiO 2 masks of different thickness on InP ...
ABSTRACT The Silicon Photomultiplier (SiPM) is a novel pixelated photon detector able to detect s... more ABSTRACT The Silicon Photomultiplier (SiPM) is a novel pixelated photon detector able to detect single photon arrival with good timing resolution and high gain. In this work we present a complete study of the performances of different SiPMs produced by STMicroelectronics. Their potentialities and limits were identified using experimental measurements and electrical simulations performed both on single pixel and SiPM having up to ̃4000 pixels. SiPM was tested in different experiments such as photoluminescence emission measurement, lifetime measurement of semiconductor materials and light diffusion in highly scattering material in the near infrared spectrum showing its aptitude to replace PMT in those applications.
ABSTRACT The dark current behavior of the pixels forming the Si photomultiplier as a function of ... more ABSTRACT The dark current behavior of the pixels forming the Si photomultiplier as a function of the applied overvoltage and operation temperature is studied. The data are modeled by assuming that dark current is caused by current pulses triggered by events of diffusion of single minority carriers injected from the peripheral boundaries of the active area depletion layer and by thermal emission of carriers from Shockley–Read–Hall defects in the active area depletion layer.
Nuovo Cimento Della Societa Italiana Di Fisica C-Geophysics and Space Physics, 2007
AbstractDesign and characterization of a new generation of single-photon avalanche diodes (SPAD)... more AbstractDesign and characterization of a new generation of single-photon avalanche diodes (SPAD) array, manufactured by ST-Microelectronics in Catania, Italy, are presented. Device performances, investigated in several experimental conditions and here reported, ...
The characteristics of a new multidetector based on the use of Monolithic Silicon Telescopes are ... more The characteristics of a new multidetector based on the use of Monolithic Silicon Telescopes are presented. Using suitable ion implantation techniques, the DeltaE and residual energy stages of the telescopes have been integrated on a single Si chip, obtaining a typical thickness for the DeltaE stage of the order of 2mum.
2012 IEEE Nuclear Science Symposium and Medical Imaging Conference Record (NSS/MIC), 2012
ABSTRACT We continue our timing measurements of Silicon Photomultipliers (SiPM) at the picosecond... more ABSTRACT We continue our timing measurements of Silicon Photomultipliers (SiPM) at the picosecond level at Fermilab .. We using SiPMs readout based on Ortec system, also as on fast waveform digitizer DRS4 [1]. SiPM's signal pulse shape was investigated. The single photoelectron time resolution (SPTR) was measured for the signals coming from the SiPM's. Dependence of the SPTR on the SiPms size was measured. Results of the last test beam test with SiPMs are presented.
The characteristics of a new multidetector based on the use of Monolithic Silicon Telescopes are ... more The characteristics of a new multidetector based on the use of Monolithic Silicon Telescopes are presented. Using suitable ion implantation techniques, the DeltaE and residual energy stages of the telescopes have been integrated on a single Si chip, obtaining a typical thickness for the DeltaE stage of the order of 2mum.
AbstractIn this paper, we present the results of the charge and time characterization performed ... more AbstractIn this paper, we present the results of the charge and time characterization performed on our novel 100-channel silicon photomultiplier. We have improved our previous single-photon-avalanche-diode technology in order to set up a working device with outstanding ...
Design and characterization of a new generation of single-photon avalanche diodes (SPAD) array, m... more Design and characterization of a new generation of single-photon avalanche diodes (SPAD) array, manufactured by ST-Microelectronics in Catania, Italy, are presented. Device performances, investigated in several experimental conditions and here reported, demonstrate their suitability in many applications. SPADs are thin p-n junctions operating above the breakdown condition in Geiger mode at low voltage. In this regime a single charged carrier
Integration of III-V materials on silicon wafer for active photonic devices have previously been ... more Integration of III-V materials on silicon wafer for active photonic devices have previously been achieved by growing thick III-V layers on top of silicon or by bonding the III-V stack layers onto a silicon wafer. Another way is the epitaxial lateral overgrowth (ELOG) of a thin III-V material from a seed layer directly on the silicon wafer, which can be used as a platform for the growth of active devices. As a prestudy, we have investigated lateral overgrowth of InP by Hydride Vapor Phase Epitaxy (HVPE) over SiO 2 masks of different thickness on InP ...
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Papers by G. Valvo