International Symposium on Parallel Computing in Electrical Engineering (PARELEC'06), 2006
Page 1. MPI and non-MPI simulations for epitaxial surface growth Carmen B. Navarrete Centro de Re... more Page 1. MPI and non-MPI simulations for epitaxial surface growth Carmen B. Navarrete Centro de Referencia Linux UAM-IBM Dpto Ingenierıa Informática Universidad Autónoma de Madrid 28049 Madrid, SPAIN, carmen.navarrete@uam.es Susana Holgado Dpto. ...
ABSTRACT The surface roughness of evaporated gold films has been studied by scanning tunneling mi... more ABSTRACT The surface roughness of evaporated gold films has been studied by scanning tunneling microscopy and a frequency analysis method that uses the whole image. The power spectrum S(q,t) presents a clear q-γ dependence in the region of high frequencies and the interface width of the films follows a tβ behavior. The values obtained for the two exponents (γ=4.1 and β=0.26) agree with the theoretical predictions (γ=4 and β=0.25) for a process controlled by pure surface diffusion in the thickness range studied. The power spectrum at high frequencies is similar for different film thickness describing a phenomenon free from anomalous scaling. We also conclude that dimensional analysis of profiles presents some practical problems in its application. On the other hand, frequency analysis of the whole image allows us to obtain a reliable determination of surface roughness.
Abstract The complexity both of the measurements and of the specimens, when scanning tunnelling m... more Abstract The complexity both of the measurements and of the specimens, when scanning tunnelling microscopy (STM) is applied in biology, requires a careful analysis of the data in order to avoid the classification of artifacts as peculiarities of the sample. The potential for determining the structures of biomolecules and their complexes emphasizes the relevance of developing procedures for STM image enhancement. Some software procedures have focused attention on the correction of geometrical distortion arising in STM images. It is ...
values obtained for the two exponents (g54.1 and b50.26) agree with the theoretical predictions (... more values obtained for the two exponents (g54.1 and b50.26) agree with the theoretical predictions ( g54 and b50.25) for a process controlled by pure surface diffusion in the thickness range studied. The power spectrum at high frequencies is similar for different film thickness describing a phenomenon free from anomalous scaling. We also conclude that dimensional analysis of profiles presents some
The behavior of the texture parameters of surfaces imaged by scanning tunneling microscopy (STM) ... more The behavior of the texture parameters of surfaces imaged by scanning tunneling microscopy (STM) under different control conditions in the feedback loop is shown. The analysis of the main surface texture parameters such as the rms-roughness, the skewness, the kurtosis and the average wavelength obtained from STM images shows that they have a strong dependence on the values of the
International Symposium on Parallel Computing in Electrical Engineering (PARELEC'06), 2006
Page 1. MPI and non-MPI simulations for epitaxial surface growth Carmen B. Navarrete Centro de Re... more Page 1. MPI and non-MPI simulations for epitaxial surface growth Carmen B. Navarrete Centro de Referencia Linux UAM-IBM Dpto Ingenierıa Informática Universidad Autónoma de Madrid 28049 Madrid, SPAIN, carmen.navarrete@uam.es Susana Holgado Dpto. ...
ABSTRACT The surface roughness of evaporated gold films has been studied by scanning tunneling mi... more ABSTRACT The surface roughness of evaporated gold films has been studied by scanning tunneling microscopy and a frequency analysis method that uses the whole image. The power spectrum S(q,t) presents a clear q-γ dependence in the region of high frequencies and the interface width of the films follows a tβ behavior. The values obtained for the two exponents (γ=4.1 and β=0.26) agree with the theoretical predictions (γ=4 and β=0.25) for a process controlled by pure surface diffusion in the thickness range studied. The power spectrum at high frequencies is similar for different film thickness describing a phenomenon free from anomalous scaling. We also conclude that dimensional analysis of profiles presents some practical problems in its application. On the other hand, frequency analysis of the whole image allows us to obtain a reliable determination of surface roughness.
Abstract The complexity both of the measurements and of the specimens, when scanning tunnelling m... more Abstract The complexity both of the measurements and of the specimens, when scanning tunnelling microscopy (STM) is applied in biology, requires a careful analysis of the data in order to avoid the classification of artifacts as peculiarities of the sample. The potential for determining the structures of biomolecules and their complexes emphasizes the relevance of developing procedures for STM image enhancement. Some software procedures have focused attention on the correction of geometrical distortion arising in STM images. It is ...
values obtained for the two exponents (g54.1 and b50.26) agree with the theoretical predictions (... more values obtained for the two exponents (g54.1 and b50.26) agree with the theoretical predictions ( g54 and b50.25) for a process controlled by pure surface diffusion in the thickness range studied. The power spectrum at high frequencies is similar for different film thickness describing a phenomenon free from anomalous scaling. We also conclude that dimensional analysis of profiles presents some
The behavior of the texture parameters of surfaces imaged by scanning tunneling microscopy (STM) ... more The behavior of the texture parameters of surfaces imaged by scanning tunneling microscopy (STM) under different control conditions in the feedback loop is shown. The analysis of the main surface texture parameters such as the rms-roughness, the skewness, the kurtosis and the average wavelength obtained from STM images shows that they have a strong dependence on the values of the
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