Digest of Technical Papers. 2005 Symposium on VLSI Technology, 2005.
This paper shows, for the first time, the successful introduction of recessed, strained Si0.8Ge0.... more This paper shows, for the first time, the successful introduction of recessed, strained Si0.8Ge0.2 in the source and drain regions of pMOS MuGFET devices, improving the on-state current of these devices by 25%, at a fixed off-state condition. The improvement is shown to be a combined effect of compressive stress introduced along the channel, and of a reduced series resistance.
Several device concepts have been further evaluated after the successful implementation of epitax... more Several device concepts have been further evaluated after the successful implementation of epitaxial Si, SiGe and/or Si:C layers. Most of the next device generations will put limitations on the thermal budget of the deposition processes without making concessions on the epitaxial layer quality. In this work we address the impact of ex-situ wet chemical cleans and in-situ pre-epi bake steps, which are required to obtain oxide free Si surfaces for epitaxial growth. The combination of defect measurements, Secondary Ion Mass Spectroscopy, photoluminescence, lifetime measurements, and electrical diode characterization gives a very complete overview of the performance of low-temperature pre-epi cleaning methods. Contamination at the epi/substrate interface cannot be avoided if the pre-epi bake temperature is too low. This interface contamination is traceable by the photoluminescence and lifetime measurements. It may affect device characteristics by enhanced leakage currents and eventually...
The low-frequency noise of pMOSFETs fabricated in epitaxial germanium-on-silicon substrates is st... more The low-frequency noise of pMOSFETs fabricated in epitaxial germanium-on-silicon substrates is studied. The gate stack consists of a TiN/TaN metal gate on top of a 1.3-nm equivalent oxide thickness HfO2/SiO2 gate dielectric bilayer. The latter is grown by chemical oxidation of a thin epitaxial silicon film deposited to passivate the germanium surface. It is shown that the spectrum is of
After a quite brief discussion of the quantal liquids He, He and H, 'classical' e... more After a quite brief discussion of the quantal liquids He, He and H, 'classical' elemental liquids which are treated in turn are C, P, Se and S. Phase boundaries in the (p, T) plane exist for each of these liquids, characterized by a change in local coordination number across these boundaries. Corresponding changes in other physical properties are briefly noted.
High quality epitaxy at low temperatures using AP/RP-CVD requires low moisture background levels ... more High quality epitaxy at low temperatures using AP/RP-CVD requires low moisture background levels in the main processing gasses, as well as an excellent leak-tightness of the tool. We perform moisture measurements on two CVD production tools and link these to a comparative analysis of their performance with respect to low temperature epitaxy.
Two recent experimental studies by Zweiback et al. and by Gobet et al. have motivated us to study... more Two recent experimental studies by Zweiback et al. and by Gobet et al. have motivated us to study the ground-state geometry and the consequent electronic structure of the singly-charged cationic hydrogen cluster H3+(H2)m for m=2,5 and 14, using at first the Hartree-Fock approximation. For the H+7 cluster the fully optimized ground-state geometry yeilds an isosceles triangle H3, with charge ~
Digest of Technical Papers. 2005 Symposium on VLSI Technology, 2005.
This paper shows, for the first time, the successful introduction of recessed, strained Si0.8Ge0.... more This paper shows, for the first time, the successful introduction of recessed, strained Si0.8Ge0.2 in the source and drain regions of pMOS MuGFET devices, improving the on-state current of these devices by 25%, at a fixed off-state condition. The improvement is shown to be a combined effect of compressive stress introduced along the channel, and of a reduced series resistance.
Several device concepts have been further evaluated after the successful implementation of epitax... more Several device concepts have been further evaluated after the successful implementation of epitaxial Si, SiGe and/or Si:C layers. Most of the next device generations will put limitations on the thermal budget of the deposition processes without making concessions on the epitaxial layer quality. In this work we address the impact of ex-situ wet chemical cleans and in-situ pre-epi bake steps, which are required to obtain oxide free Si surfaces for epitaxial growth. The combination of defect measurements, Secondary Ion Mass Spectroscopy, photoluminescence, lifetime measurements, and electrical diode characterization gives a very complete overview of the performance of low-temperature pre-epi cleaning methods. Contamination at the epi/substrate interface cannot be avoided if the pre-epi bake temperature is too low. This interface contamination is traceable by the photoluminescence and lifetime measurements. It may affect device characteristics by enhanced leakage currents and eventually...
The low-frequency noise of pMOSFETs fabricated in epitaxial germanium-on-silicon substrates is st... more The low-frequency noise of pMOSFETs fabricated in epitaxial germanium-on-silicon substrates is studied. The gate stack consists of a TiN/TaN metal gate on top of a 1.3-nm equivalent oxide thickness HfO2/SiO2 gate dielectric bilayer. The latter is grown by chemical oxidation of a thin epitaxial silicon film deposited to passivate the germanium surface. It is shown that the spectrum is of
After a quite brief discussion of the quantal liquids He, He and H, 'classical' e... more After a quite brief discussion of the quantal liquids He, He and H, 'classical' elemental liquids which are treated in turn are C, P, Se and S. Phase boundaries in the (p, T) plane exist for each of these liquids, characterized by a change in local coordination number across these boundaries. Corresponding changes in other physical properties are briefly noted.
High quality epitaxy at low temperatures using AP/RP-CVD requires low moisture background levels ... more High quality epitaxy at low temperatures using AP/RP-CVD requires low moisture background levels in the main processing gasses, as well as an excellent leak-tightness of the tool. We perform moisture measurements on two CVD production tools and link these to a comparative analysis of their performance with respect to low temperature epitaxy.
Two recent experimental studies by Zweiback et al. and by Gobet et al. have motivated us to study... more Two recent experimental studies by Zweiback et al. and by Gobet et al. have motivated us to study the ground-state geometry and the consequent electronic structure of the singly-charged cationic hydrogen cluster H3+(H2)m for m=2,5 and 14, using at first the Hartree-Fock approximation. For the H+7 cluster the fully optimized ground-state geometry yeilds an isosceles triangle H3, with charge ~
Uploads
Papers by Frederik E . Leys