Non-classical light sources that can produce streams of correlated on-demand photons are a centra... more Non-classical light sources that can produce streams of correlated on-demand photons are a central building block for optics based quantum information technologies. There are numerous possible approaches for producing such a light source. One of the most promising is the solid-state single photon source based on a single quantum dot in III-V semiconductors. Utilizing a single InAs quantum dot in an InP nanowire, we previously demonstrated a bright and efficient source for single photons [1] and entangled photon pairs [2] that emits around 950 nm. In order to interface with telecom systems, single photon sources emitting at longer wavelengths are required. A few works have extended the emission to the telecom band using a single InAs/InP quantum dot in a micro-cavity [3-4]. However, improving the source brightness and the extraction efficiency remains a challenging task. In this contribution, by modifying the growth conditions and the pre-growth pattern for an InAs dot in an InP nanowire, we demonstrate a bright light source that emits in the telecom O-band, an important step towards the demonstration of a single photon source.
High resolution TEM imaging was performed of a two layer 1.50 ± 0.09μm thick AlN film deposited u... more High resolution TEM imaging was performed of a two layer 1.50 ± 0.09μm thick AlN film deposited using the Tegal AMS 2004 S-gun magnetron sputter system on 565nm of thermal oxide. The AlN film was deposited in two depositions, with vacuum broken in between. Process induced faults and dislocations are observed at both the AlN-substrate interface and at the film location where vacuum was broken, but irregularities are generally resolved within 5nm. Additional roughness and stacking faults are observed in the last 6nm of film deposition. Bright field imaging of the film shows a distinct line of discontinuity at the film location where vacuum was broken between depositions; however, the grain structure of the film remains largely continuous across the discontinuity. A film deposited under the same conditions as the measured sample, but deposited in one deposition, had comparable stress (<;50 MPa), thickness, and grain size properties. Increased XRD rocking curve FWHM values for the two deposition film (1.29+/-0.01°) as compared with the single deposition film (0.97+/-0.01°) is likely due to the stacking irregularities introduced at the location where vacuum was broken.
International Conference on Indium Phosphide and Related Materials, May 22, 2011
ABSTRACT We describe two different approaches to growing precisely positioned and diameter contro... more ABSTRACT We describe two different approaches to growing precisely positioned and diameter controlled InP nanowires on InP wafers. Both of these approaches utilize the selective area growth capabilities of Chemical Beam Epitaxy (CBE), one using the Au catalysed Vapour-Liquid-Solid (VLS) growth mode, the other being catalyst-free. In both cases a SiO2 masked substrate is used with the nanowire positions determined through e-beam lithography. In VLS growth the nanowire diameter is controlled by the size of the Au particle, whereas when catalyst-free the diameter is that of the opening in the SiO2 mask. The orientation of the nanowires is also different, &lt;;111&gt;;B when using Au particles and &lt;;111&gt;;A when catalyst- free. For the catalysed growth the effect of the Au particle can be turned off by modifying growth conditions allowing the nanowire to be clad, dramatically enhancing the optical emission from InAsP quantum dots grown inside the nanowire. Photoluminescence from individual InAsP quantum dots is observed, and it is shown that the s- to p-shell splitting can be reproducibly controlled through the nanowire diameter.
Quantum dots embedded in photonic nanowires are a promising route for generating single photons w... more Quantum dots embedded in photonic nanowires are a promising route for generating single photons with high efficiency [1]. Integration of such sources on-chip offers enhanced stability and miniaturization, important in many applications involving the processing of quantum information. Here we demonstrate the efficient coupling of quantum light generated in a III-V photonic nanowire to a silicon-based photonic integrated circuit. The hybrid integration is based on a “pick & place” approach using a nanomanipulator in a scanning electron microscope. We demonstrate detected count rates of 1 Mcps and single photon purities >95%.
A method to integrate nanowire‐based quantum dot single photon sources on‐chip using evanescent c... more A method to integrate nanowire‐based quantum dot single photon sources on‐chip using evanescent coupling is demonstrated. By deterministically placing an appropriately tapered III‐V nanowire, containing a single quantum dot, on top of a silicon‐based ridge waveguide, the quantum dot emission directed toward the taper can be transferred to the ridge waveguide with calculated efficiencies close to 100%. As the evanescent coupling is bidirectional, the source can be optically pumped in both free‐space and through the ridge waveguide. The latter configuration paves the way toward a self‐contained, all‐fiber, plug‐and‐play solution for applications requiring a bright on‐demand single photon source. Using InAsP quantum dots embedded in InP nanowire waveguides, coupling efficiencies to a SiN ridge waveguide of 74% with a single photon purity of 97% are demonstrated. The technique to demonstrate deterministic placement of single quantum emitters onto pre‐fabricated waveguides is used, an im...
We report on the site-selected growth of bright single InAsP quantum dots embedded within InP pho... more We report on the site-selected growth of bright single InAsP quantum dots embedded within InP photonic nanowire waveguides emitting at telecom wavelengths. We demonstrate a dramatic dependence of the emission rate on both the emission wavelength and the nanowire diameter. With an appropriately designed waveguide, tailored to the emission wavelength of the dot, an increase in the count rate by nearly 2 orders of magnitude (0.4 to 35 kcps) is obtained for quantum dots emitting in the telecom O-band, showing high single-photon purity with multiphoton emission probabilities down to 2%. Using emission-wavelength-optimized waveguides, we demonstrate bright, narrow-line-width emission from single InAsP quantum dots with an unprecedented tuning range of 880 to 1550 nm. These results pave the way toward efficient single-photon sources at telecom wavelengths using deterministically grown InAsP/InP nanowire quantum dots.
2014 15th International Conference on Electronic Packaging Technology, 2014
High resolution TEM imaging was performed of a two layer 1.50 ± 0.09μm thick AlN film deposited u... more High resolution TEM imaging was performed of a two layer 1.50 ± 0.09μm thick AlN film deposited using the Tegal AMS 2004 S-gun magnetron sputter system on 565nm of thermal oxide. The AlN film was deposited in two depositions, with vacuum broken in between. Process induced faults and dislocations are observed at both the AlN-substrate interface and at the film location where vacuum was broken, but irregularities are generally resolved within 5nm. Additional roughness and stacking faults are observed in the last 6nm of film deposition. Bright field imaging of the film shows a distinct line of discontinuity at the film location where vacuum was broken between depositions; however, the grain structure of the film remains largely continuous across the discontinuity. A film deposited under the same conditions as the measured sample, but deposited in one deposition, had comparable stress (<;50 MPa), thickness, and grain size properties. Increased XRD rocking curve FWHM values for the two deposition film (1.29+/-0.01°) as compared with the single deposition film (0.97+/-0.01°) is likely due to the stacking irregularities introduced at the location where vacuum was broken.
Non-classical light sources that can produce streams of correlated on-demand photons are a centra... more Non-classical light sources that can produce streams of correlated on-demand photons are a central building block for optics based quantum information technologies. There are numerous possible approaches for producing such a light source. One of the most promising is the solid-state single photon source based on a single quantum dot in III-V semiconductors. Utilizing a single InAs quantum dot in an InP nanowire, we previously demonstrated a bright and efficient source for single photons [1] and entangled photon pairs [2] that emits around 950 nm. In order to interface with telecom systems, single photon sources emitting at longer wavelengths are required. A few works have extended the emission to the telecom band using a single InAs/InP quantum dot in a micro-cavity [3-4]. However, improving the source brightness and the extraction efficiency remains a challenging task. In this contribution, by modifying the growth conditions and the pre-growth pattern for an InAs dot in an InP nanowire, we demonstrate a bright light source that emits in the telecom O-band, an important step towards the demonstration of a single photon source.
High resolution TEM imaging was performed of a two layer 1.50 ± 0.09μm thick AlN film deposited u... more High resolution TEM imaging was performed of a two layer 1.50 ± 0.09μm thick AlN film deposited using the Tegal AMS 2004 S-gun magnetron sputter system on 565nm of thermal oxide. The AlN film was deposited in two depositions, with vacuum broken in between. Process induced faults and dislocations are observed at both the AlN-substrate interface and at the film location where vacuum was broken, but irregularities are generally resolved within 5nm. Additional roughness and stacking faults are observed in the last 6nm of film deposition. Bright field imaging of the film shows a distinct line of discontinuity at the film location where vacuum was broken between depositions; however, the grain structure of the film remains largely continuous across the discontinuity. A film deposited under the same conditions as the measured sample, but deposited in one deposition, had comparable stress (<;50 MPa), thickness, and grain size properties. Increased XRD rocking curve FWHM values for the two deposition film (1.29+/-0.01°) as compared with the single deposition film (0.97+/-0.01°) is likely due to the stacking irregularities introduced at the location where vacuum was broken.
International Conference on Indium Phosphide and Related Materials, May 22, 2011
ABSTRACT We describe two different approaches to growing precisely positioned and diameter contro... more ABSTRACT We describe two different approaches to growing precisely positioned and diameter controlled InP nanowires on InP wafers. Both of these approaches utilize the selective area growth capabilities of Chemical Beam Epitaxy (CBE), one using the Au catalysed Vapour-Liquid-Solid (VLS) growth mode, the other being catalyst-free. In both cases a SiO2 masked substrate is used with the nanowire positions determined through e-beam lithography. In VLS growth the nanowire diameter is controlled by the size of the Au particle, whereas when catalyst-free the diameter is that of the opening in the SiO2 mask. The orientation of the nanowires is also different, &lt;;111&gt;;B when using Au particles and &lt;;111&gt;;A when catalyst- free. For the catalysed growth the effect of the Au particle can be turned off by modifying growth conditions allowing the nanowire to be clad, dramatically enhancing the optical emission from InAsP quantum dots grown inside the nanowire. Photoluminescence from individual InAsP quantum dots is observed, and it is shown that the s- to p-shell splitting can be reproducibly controlled through the nanowire diameter.
Quantum dots embedded in photonic nanowires are a promising route for generating single photons w... more Quantum dots embedded in photonic nanowires are a promising route for generating single photons with high efficiency [1]. Integration of such sources on-chip offers enhanced stability and miniaturization, important in many applications involving the processing of quantum information. Here we demonstrate the efficient coupling of quantum light generated in a III-V photonic nanowire to a silicon-based photonic integrated circuit. The hybrid integration is based on a “pick & place” approach using a nanomanipulator in a scanning electron microscope. We demonstrate detected count rates of 1 Mcps and single photon purities >95%.
A method to integrate nanowire‐based quantum dot single photon sources on‐chip using evanescent c... more A method to integrate nanowire‐based quantum dot single photon sources on‐chip using evanescent coupling is demonstrated. By deterministically placing an appropriately tapered III‐V nanowire, containing a single quantum dot, on top of a silicon‐based ridge waveguide, the quantum dot emission directed toward the taper can be transferred to the ridge waveguide with calculated efficiencies close to 100%. As the evanescent coupling is bidirectional, the source can be optically pumped in both free‐space and through the ridge waveguide. The latter configuration paves the way toward a self‐contained, all‐fiber, plug‐and‐play solution for applications requiring a bright on‐demand single photon source. Using InAsP quantum dots embedded in InP nanowire waveguides, coupling efficiencies to a SiN ridge waveguide of 74% with a single photon purity of 97% are demonstrated. The technique to demonstrate deterministic placement of single quantum emitters onto pre‐fabricated waveguides is used, an im...
We report on the site-selected growth of bright single InAsP quantum dots embedded within InP pho... more We report on the site-selected growth of bright single InAsP quantum dots embedded within InP photonic nanowire waveguides emitting at telecom wavelengths. We demonstrate a dramatic dependence of the emission rate on both the emission wavelength and the nanowire diameter. With an appropriately designed waveguide, tailored to the emission wavelength of the dot, an increase in the count rate by nearly 2 orders of magnitude (0.4 to 35 kcps) is obtained for quantum dots emitting in the telecom O-band, showing high single-photon purity with multiphoton emission probabilities down to 2%. Using emission-wavelength-optimized waveguides, we demonstrate bright, narrow-line-width emission from single InAsP quantum dots with an unprecedented tuning range of 880 to 1550 nm. These results pave the way toward efficient single-photon sources at telecom wavelengths using deterministically grown InAsP/InP nanowire quantum dots.
2014 15th International Conference on Electronic Packaging Technology, 2014
High resolution TEM imaging was performed of a two layer 1.50 ± 0.09μm thick AlN film deposited u... more High resolution TEM imaging was performed of a two layer 1.50 ± 0.09μm thick AlN film deposited using the Tegal AMS 2004 S-gun magnetron sputter system on 565nm of thermal oxide. The AlN film was deposited in two depositions, with vacuum broken in between. Process induced faults and dislocations are observed at both the AlN-substrate interface and at the film location where vacuum was broken, but irregularities are generally resolved within 5nm. Additional roughness and stacking faults are observed in the last 6nm of film deposition. Bright field imaging of the film shows a distinct line of discontinuity at the film location where vacuum was broken between depositions; however, the grain structure of the film remains largely continuous across the discontinuity. A film deposited under the same conditions as the measured sample, but deposited in one deposition, had comparable stress (<;50 MPa), thickness, and grain size properties. Increased XRD rocking curve FWHM values for the two deposition film (1.29+/-0.01°) as compared with the single deposition film (0.97+/-0.01°) is likely due to the stacking irregularities introduced at the location where vacuum was broken.
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Papers by Khaled Mnaymneh