Superconducting thin films of the Tl2Ba2CaCu2Ox (2212) and Tl2Ba2Ca2Cu3Ox (2223) phases have been... more Superconducting thin films of the Tl2Ba2CaCu2Ox (2212) and Tl2Ba2Ca2Cu3Ox (2223) phases have been prepared through a combined approach of MOCVD and thallium vapour diffusion. The effects due to the nature of the BaCaCuO(F) precursor matrix on the formation of the TlBaCaCuO phase film have been investigated. Fluorinated [BaCaCuO(F)] matrices have been deposited from Ba(hfa)2·tetraglyme, Ca(hfa)2·tetraglyme and Cu(acac)2 via metalorganic chemical
ABSTRACT The complex, Mn(hfa)2•tmeda [(H-hfa = 1,1,1,5,5,5-hexafluoro-2,4-pentandione, tmeda = N,... more ABSTRACT The complex, Mn(hfa)2•tmeda [(H-hfa = 1,1,1,5,5,5-hexafluoro-2,4-pentandione, tmeda = N,N,N′,N′-tetramethylethylendiamine)], is synthesized in a single-step reaction and characterized by elemental analysis, thermal analysis, and infrared (IR) spectroscopy. The solid-state crystal structure of Mn(hfa)2•tmeda provides evidence of a mononuclear structure. The thermal analyses show that the complex is thermally stable and can be evaporated to leave less than 2% residue. The complex properties are compared with the first generation, commercially available MnII and MnIII precursors, Mn(acac)2 (Hacac = acetylacetone) and Mn(tmhd)3 (Htmhd = 2,2,6,6-tetramethyl-3,5-heptanedione), respectively. Mn(hfa)2•tmeda represents the first example of manganese(II) precursor that can be used in the liquid phase without decomposition, thus providing constant evaporation rates, even for long deposition times. It is successfully applied to the reduced-pressure, metal-organic (MO)CVD of the Mn3O4 phase.
The electrical conductivity of platinum nanocolumns has been imaged and measured by conductive at... more The electrical conductivity of platinum nanocolumns has been imaged and measured by conductive atomic force microscopy. The successful syntheses of well-aligned 100-oriented Pt nanocolumns on both random and oriented substrates have been carried out via a simple and seedless metal-organic chemical vapor deposition process. Control of the crystalline quality has been achieved by carefully selecting operational conditions. The growth mechanism, depending on deposition parameters (including deposition temperature, oxygen partial pressures, deposition time, and substrate nature), has been examined in detail.
Recently a simple and low cost route to produce high quality CaCu3Ti4O12 (CCTO) films adopting a ... more Recently a simple and low cost route to produce high quality CaCu3Ti4O12 (CCTO) films adopting a multimetal molten single source, consisting of Ti(tmhd)2(i-Opr)2, Ca(hfa)2tetraglyme and Cu(tmhd)2 [Hhfa= 1,1,1,5,5,5-hexafluoro-2,4-pentanedione; tetraglyme= 2,5,8,11,14-...
Dalton transactions (Cambridge, England : 2003), Jan 28, 2006
A novel nickel beta-diketonate adduct, Ni(tta)2.tmeda, has been synthesized using 2-thenoyltriflu... more A novel nickel beta-diketonate adduct, Ni(tta)2.tmeda, has been synthesized using 2-thenoyltrifluoroacetone as the beta-diketonate and N,N,N,'N'-tetramethylethylendiamine as the Lewis base. It has been characterized by elemental analyses, IR, 1H NMR, 13C NMR spectroscopy and single-crystal X-ray diffraction studies. Physical and thermal properties of Ni(tta)2.tmeda precursor have been also extensively investigated. Its efficacy as a metal-organic chemical vapour deposition (MOCVD) precursor for the growth of nickel oxide films has been fully tested by applying it to the deposition of NiO films on quartz substrate. NiO thin films have been characterized by X-ray diffraction (XRD), scanning electron microscopy and UV spectroscopy.
Chemical Vapor Deposition (CVD) uses one or more gaseous species (precursors) to form on a substr... more Chemical Vapor Deposition (CVD) uses one or more gaseous species (precursors) to form on a substrate, solid phase materials through an activated process. While today a large variety of precursors is known and rather complex deposition routes are involved, a user-friendly classification of precursor compounds as well as a viable discussion of their physical and chemical characteristics can be useful to MOCVD practitioners. In this Chapter, an overview of both the exploitation and challenges of MOCVD fabrication of praseodymium oxides will be highlighted from different points of view, including the more suited precursors, the synthesis of thin films and their stability on silicon substrates.
A complete set up of optimal process conditions for an effective colloidal lithography/catalyst a... more A complete set up of optimal process conditions for an effective colloidal lithography/catalyst assisted MOCVD process integration is presented. It mainly focus on the determination of the deposition temperature threshold for ZnO Metal-organic Chemical Vapour Deposition ( ...
Metal complexes bearing linked beta-diketonates and ancillary Lewis ligands have found wide inter... more Metal complexes bearing linked beta-diketonates and ancillary Lewis ligands have found wide interest as precursors. The relationships involving molecular architectures and mass transport properties of alkaline-, rare-earth and transition metal precursors are discussed. ...
Solid-State Device Research European Conference, 2003
Praseodymium oxide-based high k dielectric thin films grown by metal-organic chemical vapour depo... more Praseodymium oxide-based high k dielectric thin films grown by metal-organic chemical vapour deposition (MOCVD) at 750°C on p-type Si (100) substrates have been proposed. It has been revealed by energy-filtered TEM analyses that depositions in 10-3 torr oxygen partial pressure produced a Pr2O3 and a PrnO2n-2·SiO2 bottom layer. The electrical properties of both Pr2O3/PrnO2n-2·SiO2 structures and PrnO2n-2·SiO2 thin layers have
... Roberta G. Toro ... Figure 7 shows the experimental and calculated spectra of the ellipsometr... more ... Roberta G. Toro ... Figure 7 shows the experimental and calculated spectra of the ellipsometric variables (I s = sin(2ψ) sin(2Δ) and I c = sin(2ψ) cos(2Δ)) measured at various incidence angles (55, 60, and 65°) for the 100 CeO 2 oriented film grown on TiO 2 . The same multiple ...
Superconducting thin films of the Tl2Ba2CaCu2Ox (2212) and Tl2Ba2Ca2Cu3Ox (2223) phases have been... more Superconducting thin films of the Tl2Ba2CaCu2Ox (2212) and Tl2Ba2Ca2Cu3Ox (2223) phases have been prepared through a combined approach of MOCVD and thallium vapour diffusion. The effects due to the nature of the BaCaCuO(F) precursor matrix on the formation of the TlBaCaCuO phase film have been investigated. Fluorinated [BaCaCuO(F)] matrices have been deposited from Ba(hfa)2·tetraglyme, Ca(hfa)2·tetraglyme and Cu(acac)2 via metalorganic chemical
ABSTRACT The complex, Mn(hfa)2•tmeda [(H-hfa = 1,1,1,5,5,5-hexafluoro-2,4-pentandione, tmeda = N,... more ABSTRACT The complex, Mn(hfa)2•tmeda [(H-hfa = 1,1,1,5,5,5-hexafluoro-2,4-pentandione, tmeda = N,N,N′,N′-tetramethylethylendiamine)], is synthesized in a single-step reaction and characterized by elemental analysis, thermal analysis, and infrared (IR) spectroscopy. The solid-state crystal structure of Mn(hfa)2•tmeda provides evidence of a mononuclear structure. The thermal analyses show that the complex is thermally stable and can be evaporated to leave less than 2% residue. The complex properties are compared with the first generation, commercially available MnII and MnIII precursors, Mn(acac)2 (Hacac = acetylacetone) and Mn(tmhd)3 (Htmhd = 2,2,6,6-tetramethyl-3,5-heptanedione), respectively. Mn(hfa)2•tmeda represents the first example of manganese(II) precursor that can be used in the liquid phase without decomposition, thus providing constant evaporation rates, even for long deposition times. It is successfully applied to the reduced-pressure, metal-organic (MO)CVD of the Mn3O4 phase.
The electrical conductivity of platinum nanocolumns has been imaged and measured by conductive at... more The electrical conductivity of platinum nanocolumns has been imaged and measured by conductive atomic force microscopy. The successful syntheses of well-aligned 100-oriented Pt nanocolumns on both random and oriented substrates have been carried out via a simple and seedless metal-organic chemical vapor deposition process. Control of the crystalline quality has been achieved by carefully selecting operational conditions. The growth mechanism, depending on deposition parameters (including deposition temperature, oxygen partial pressures, deposition time, and substrate nature), has been examined in detail.
Recently a simple and low cost route to produce high quality CaCu3Ti4O12 (CCTO) films adopting a ... more Recently a simple and low cost route to produce high quality CaCu3Ti4O12 (CCTO) films adopting a multimetal molten single source, consisting of Ti(tmhd)2(i-Opr)2, Ca(hfa)2tetraglyme and Cu(tmhd)2 [Hhfa= 1,1,1,5,5,5-hexafluoro-2,4-pentanedione; tetraglyme= 2,5,8,11,14-...
Dalton transactions (Cambridge, England : 2003), Jan 28, 2006
A novel nickel beta-diketonate adduct, Ni(tta)2.tmeda, has been synthesized using 2-thenoyltriflu... more A novel nickel beta-diketonate adduct, Ni(tta)2.tmeda, has been synthesized using 2-thenoyltrifluoroacetone as the beta-diketonate and N,N,N,'N'-tetramethylethylendiamine as the Lewis base. It has been characterized by elemental analyses, IR, 1H NMR, 13C NMR spectroscopy and single-crystal X-ray diffraction studies. Physical and thermal properties of Ni(tta)2.tmeda precursor have been also extensively investigated. Its efficacy as a metal-organic chemical vapour deposition (MOCVD) precursor for the growth of nickel oxide films has been fully tested by applying it to the deposition of NiO films on quartz substrate. NiO thin films have been characterized by X-ray diffraction (XRD), scanning electron microscopy and UV spectroscopy.
Chemical Vapor Deposition (CVD) uses one or more gaseous species (precursors) to form on a substr... more Chemical Vapor Deposition (CVD) uses one or more gaseous species (precursors) to form on a substrate, solid phase materials through an activated process. While today a large variety of precursors is known and rather complex deposition routes are involved, a user-friendly classification of precursor compounds as well as a viable discussion of their physical and chemical characteristics can be useful to MOCVD practitioners. In this Chapter, an overview of both the exploitation and challenges of MOCVD fabrication of praseodymium oxides will be highlighted from different points of view, including the more suited precursors, the synthesis of thin films and their stability on silicon substrates.
A complete set up of optimal process conditions for an effective colloidal lithography/catalyst a... more A complete set up of optimal process conditions for an effective colloidal lithography/catalyst assisted MOCVD process integration is presented. It mainly focus on the determination of the deposition temperature threshold for ZnO Metal-organic Chemical Vapour Deposition ( ...
Metal complexes bearing linked beta-diketonates and ancillary Lewis ligands have found wide inter... more Metal complexes bearing linked beta-diketonates and ancillary Lewis ligands have found wide interest as precursors. The relationships involving molecular architectures and mass transport properties of alkaline-, rare-earth and transition metal precursors are discussed. ...
Solid-State Device Research European Conference, 2003
Praseodymium oxide-based high k dielectric thin films grown by metal-organic chemical vapour depo... more Praseodymium oxide-based high k dielectric thin films grown by metal-organic chemical vapour deposition (MOCVD) at 750°C on p-type Si (100) substrates have been proposed. It has been revealed by energy-filtered TEM analyses that depositions in 10-3 torr oxygen partial pressure produced a Pr2O3 and a PrnO2n-2·SiO2 bottom layer. The electrical properties of both Pr2O3/PrnO2n-2·SiO2 structures and PrnO2n-2·SiO2 thin layers have
... Roberta G. Toro ... Figure 7 shows the experimental and calculated spectra of the ellipsometr... more ... Roberta G. Toro ... Figure 7 shows the experimental and calculated spectra of the ellipsometric variables (I s = sin(2ψ) sin(2Δ) and I c = sin(2ψ) cos(2Δ)) measured at various incidence angles (55, 60, and 65°) for the 100 CeO 2 oriented film grown on TiO 2 . The same multiple ...
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