In this work, the effect of interference due to noise or due to the presence of a tone in the ban... more In this work, the effect of interference due to noise or due to the presence of a tone in the band in the bit rate of data links (ACL) in bluetooth technology using different packet types (DM1, DH1, DM3, ...) is described. The maximum data rate that we have obtained using each packet type is used as a reference. The effect of noise degrades the data rate depending on the packet type. In single slot packets (DM1, DH1), data rates near the theoretical maximum (108 kbps, 172 kbps) are obtained in the absence of noise. Using these packets, MP3 files of 4MB in size can be transferred, with bit rates that allow audio streaming with near CD quality. Multi-slot packets provide higher data rate, but are more sensitive to the presence of noise and, in our case, usually can not complete the transfer of all the file due to instability problems of the stack we use. These results can be understood in the light of a model we are now working on. I. INTRODUCCIÓN La tecnología Bluetooth esta pensada ...
El objetivo de esta Tesis es caracterizar el crecimiento de los siliciuros de iridio en capa delg... more El objetivo de esta Tesis es caracterizar el crecimiento de los siliciuros de iridio en capa delgada obtenidos mediante procesamiento térmico rápido (RTP), con el fin de determinar los compuestos obtenidos y la cinética de crecimiento de los mismos. Aunque la utilización del RTP para la obtención de los siliciuros de iridio es un método pionero, a partir de los resultados publicados en la literatura para otros tipos de tratamiento térmico, se plantean como puntos críticos la utilización de un material de partida libre de contaminación con oxígeno y un control exhaustivo de la temperatura y tiempo de tratamiento térmico, así como de la atmósfera donde se lleva a cabo el proceso de silicidación. En el desarrollo de este trabajo se han definido rutinas de deposito del iridio y de tratamientos térmicos mediante RTP, que han garantizado que no se produce la contaminación con oxígeno. Aplicando diversas técnicas de caracterización (RBS, TEM, Espectroscopía Auger, XRD, SIMS, XES y Espectro...
In this paper, we describe an architecture that allows the integration of different devices in th... more In this paper, we describe an architecture that allows the integration of different devices in the home, such as appliances, security devices, etc. in the Internet. The local links between each device and a home server is achieved using Bluetooth technology. The server keeps a data base with the information of each device. In our proposed solution, each home item connects to the server as a client, as does any user that connect to the server via Internet. All the connections are asynchronous, as we estimate that at this point there is no need for a higher data rate. When a user connects, it reads the corresponding record of the device selected and afterwards it can decide to modify it. When a device at home connects, after reading the status in the record, it can also send a message asking for some special service or signal a failure. If the device allows it, even upgraded firmware can be downloaded using this solution. As the link is an RF link, no wires are involved so that reloca...
ABSTRACT Iridium silicide Schottky barrier diodes fabricated by low temperature rapid thermal ann... more ABSTRACT Iridium silicide Schottky barrier diodes fabricated by low temperature rapid thermal annealing (R TA) either in vacuum or in an argon atmosphere are investigated. A comparison with furnace annealed diodes is made in terms of their electrical characteristics. An ideality index close to unity has been obtained. Measured values of Schottky barrier height were close to that reported for Ir1Si1/n type silicon diodes. An increase in series resistance with annealing time is detected for diodes fabricated in the gas atmosphere by either furnace annealing or RTA: this effect seems to be related to oxygen diffusion through the iridium layer. The effect of atmosphere control on the grown material is also significant: silicidation and a phase change from Ir1 Si1 to Ir1 Si1-75 occur at lower temperatures when the reaction atmospheres contain a lower oxygen concentration. Complete silicidation to Ir1Si1 is obtainedfor all the 400°C RTA samples, but temperatures above 450°C are required for open tube furnace argon annealed samples to obtain the same reaction. A low barrier silicide phase appears only for RTA in vacuum at 450°C. It seems that RTA in vacuum at low temperature (400°C) is the most promising methodfor diode fabrication.MST/3334
IEEE 2002 28th Annual Conference of the Industrial Electronics Society. IECON 02, 2002
ABSTRACT A set of software tools developed to facilitate the edition and presentation of the cont... more ABSTRACT A set of software tools developed to facilitate the edition and presentation of the contents of experimental work is described. These tools are built to follow a learning method that uses a computer to guide and supervise the practical work in real time in a hardware laboratory. This method has been successfully applied for the last five years to an average of 450 students per year. The developed tools allow the extension of the method to any experimental matter. These tools structure a project as an electronic book that can be edited and configured on a user friendly windows style interface. A complementary browsing tool shows the content of the edited project and, depending on the browsing profile, validates the results against predetermined range data values as well as monitors the results against real time measurements. The measurement sequence is kept in a set of external files, so that they can be modified without the need of re-editing the whole project, following a modular approach.
Iridium silicides formation by RTA in an Ar atmosphere or under vacuum has been studied for sever... more Iridium silicides formation by RTA in an Ar atmosphere or under vacuum has been studied for several temperatures in the range of 350500°C. For the samples annealed in argon atmosphere, oxygen is incorporated during the RTA process, slowing down the reaction ...
In this work, the effect of interference due to noise or due to the presence of a tone in the ban... more In this work, the effect of interference due to noise or due to the presence of a tone in the band in the bit rate of data links (ACL) in bluetooth technology using different packet types (DM1, DH1, DM3, ...) is described. The maximum data rate that we have obtained using each packet type is used as a reference. The effect of noise degrades the data rate depending on the packet type. In single slot packets (DM1, DH1), data rates near the theoretical maximum (108 kbps, 172 kbps) are obtained in the absence of noise. Using these packets, MP3 files of 4MB in size can be transferred, with bit rates that allow audio streaming with near CD quality. Multi-slot packets provide higher data rate, but are more sensitive to the presence of noise and, in our case, usually can not complete the transfer of all the file due to instability problems of the stack we use. These results can be understood in the light of a model we are now working on. I. INTRODUCCIÓN La tecnología Bluetooth esta pensada ...
El objetivo de esta Tesis es caracterizar el crecimiento de los siliciuros de iridio en capa delg... more El objetivo de esta Tesis es caracterizar el crecimiento de los siliciuros de iridio en capa delgada obtenidos mediante procesamiento térmico rápido (RTP), con el fin de determinar los compuestos obtenidos y la cinética de crecimiento de los mismos. Aunque la utilización del RTP para la obtención de los siliciuros de iridio es un método pionero, a partir de los resultados publicados en la literatura para otros tipos de tratamiento térmico, se plantean como puntos críticos la utilización de un material de partida libre de contaminación con oxígeno y un control exhaustivo de la temperatura y tiempo de tratamiento térmico, así como de la atmósfera donde se lleva a cabo el proceso de silicidación. En el desarrollo de este trabajo se han definido rutinas de deposito del iridio y de tratamientos térmicos mediante RTP, que han garantizado que no se produce la contaminación con oxígeno. Aplicando diversas técnicas de caracterización (RBS, TEM, Espectroscopía Auger, XRD, SIMS, XES y Espectro...
In this paper, we describe an architecture that allows the integration of different devices in th... more In this paper, we describe an architecture that allows the integration of different devices in the home, such as appliances, security devices, etc. in the Internet. The local links between each device and a home server is achieved using Bluetooth technology. The server keeps a data base with the information of each device. In our proposed solution, each home item connects to the server as a client, as does any user that connect to the server via Internet. All the connections are asynchronous, as we estimate that at this point there is no need for a higher data rate. When a user connects, it reads the corresponding record of the device selected and afterwards it can decide to modify it. When a device at home connects, after reading the status in the record, it can also send a message asking for some special service or signal a failure. If the device allows it, even upgraded firmware can be downloaded using this solution. As the link is an RF link, no wires are involved so that reloca...
ABSTRACT Iridium silicide Schottky barrier diodes fabricated by low temperature rapid thermal ann... more ABSTRACT Iridium silicide Schottky barrier diodes fabricated by low temperature rapid thermal annealing (R TA) either in vacuum or in an argon atmosphere are investigated. A comparison with furnace annealed diodes is made in terms of their electrical characteristics. An ideality index close to unity has been obtained. Measured values of Schottky barrier height were close to that reported for Ir1Si1/n type silicon diodes. An increase in series resistance with annealing time is detected for diodes fabricated in the gas atmosphere by either furnace annealing or RTA: this effect seems to be related to oxygen diffusion through the iridium layer. The effect of atmosphere control on the grown material is also significant: silicidation and a phase change from Ir1 Si1 to Ir1 Si1-75 occur at lower temperatures when the reaction atmospheres contain a lower oxygen concentration. Complete silicidation to Ir1Si1 is obtainedfor all the 400°C RTA samples, but temperatures above 450°C are required for open tube furnace argon annealed samples to obtain the same reaction. A low barrier silicide phase appears only for RTA in vacuum at 450°C. It seems that RTA in vacuum at low temperature (400°C) is the most promising methodfor diode fabrication.MST/3334
IEEE 2002 28th Annual Conference of the Industrial Electronics Society. IECON 02, 2002
ABSTRACT A set of software tools developed to facilitate the edition and presentation of the cont... more ABSTRACT A set of software tools developed to facilitate the edition and presentation of the contents of experimental work is described. These tools are built to follow a learning method that uses a computer to guide and supervise the practical work in real time in a hardware laboratory. This method has been successfully applied for the last five years to an average of 450 students per year. The developed tools allow the extension of the method to any experimental matter. These tools structure a project as an electronic book that can be edited and configured on a user friendly windows style interface. A complementary browsing tool shows the content of the edited project and, depending on the browsing profile, validates the results against predetermined range data values as well as monitors the results against real time measurements. The measurement sequence is kept in a set of external files, so that they can be modified without the need of re-editing the whole project, following a modular approach.
Iridium silicides formation by RTA in an Ar atmosphere or under vacuum has been studied for sever... more Iridium silicides formation by RTA in an Ar atmosphere or under vacuum has been studied for several temperatures in the range of 350500°C. For the samples annealed in argon atmosphere, oxygen is incorporated during the RTA process, slowing down the reaction ...
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Papers by Alberto Almendra