Experienced Senior Principal with a demonstrated history of working in the semiconductors industry. Strong engineering professional skilled in Lithography, Systems Engineering, EUV, Thin Films, Vacuum, Customer and Supplier Relationship Management.Jan B.P. van Schoot, PhD, is senior principle architect at ASML, department of System Engineering. He is based in Veldhoven, The Netherlands. Van Schoot studied Electrical Engineering at the Twente University of Technology. He received his PhD in Physics on the subject of non-linear optical waveguide devices in 1994. After his graduation he held a post-doc position in cooperation with British Telecom and Flamel Technologies, studying a waveguide based electro-optical modulator.He joined ASML in 1996. In 1997 he became Project Leader for the Application of the first 5500/500 scanner as well as its successors up to the 5500/750. In 2001 he became Product Development Manager of Imaging Products (DoseMapper, Customized Illumination). Since 2007 he joined the department of System Engineering. He was responsible for the Optical Columns of the NXE:3100 and NXE:3300 EUV systems. After this he worked on the design of the EUV source. Currently he is the study leader of the High-NA EUV system.He holds over 20 patents in the field of optical lithography and presents frequently at conferences about photo lithography.
EUV technology with its state-of-the-art tool generation equipped with a Numerical Aperture (NA) ... more EUV technology with its state-of-the-art tool generation equipped with a Numerical Aperture (NA) of 0.33 and providing 13 nm resolution is on the brink of entering high volume manufacturing. Extending the roadmap down to a resolution of 8 nm requires a high-NA successor tool. ASML and ZEISS are jointly developing an EUV scanner system with an NA of 0.55 to enable the continuation of Moore’s law throughout the next decade. In this paper we motivate the top-level requirements of this high-NA tool, deduce implications on system design and present how they are solved in the tool. In particular, we address implications of the high-NA leading to large mirror sizes, introduction of a central obscuration and an anamorphic lens design resulting in the transition from full to half field. A consequence of the high-NA is a reduced depth of focus which is dealt with by an improved focus control of the system. The aberration level of the high-NA tool will be significantly reduced w.r.t. the NA 0....
Lithography for Semiconductor Manufacturing II, 2001
ABSTRACT A novel analysis methodology, for the breakdown and ranking of the different sources of ... more ABSTRACT A novel analysis methodology, for the breakdown and ranking of the different sources of line width variation, is presented. The method is applied both on the level of an individual wafer, and on multiple wafers in a batch. It enables evaluation of the exposure tool performance in relation to other contributors to line width variation. Separation of the contribution of the exposure tool component from other sources of line width errors, requires sufficiently dense and accurate sampling of the CD variation across a wafer, because of the statistical confidence needed in the budget breakdown analysis. These requirements are met by taking advantage of the excellent performance of Electrical Line Width Measurements in terms of repeatability and data acquisition speed. The exposure tool is found to be only responsible for a limited part of the total CD uniformity across the batch. The largest contributors are reticle and processing components at individual wafer level and the CD offset between the wafers at batch level. The resist process component is larger than expected due to a dominating swirl shaped artifact caus4ed by non optimal track performance. A refined analysis of the full wafer CD uniformity was focused on the systematic contributions from the H-V difference and scan direction. Both of these components appear to be only a small part of the intra die budget.
2006 IEEE International Symposium on Semiconductor Manufacturing, 2006
As the device integration and relating lithography process progressively increasing in complexity... more As the device integration and relating lithography process progressively increasing in complexity for each new technology node, there is a growing need for a more integrated approach to process control. There are several insitu metrology sensors in ASML scanners that can be used to improve not only the scanner equipment and lithography process stability but also to compensate for other
2006 IEEE International Symposium on Semiconductor Manufacturing, 2006
As the device integration and relating lithography process progressively increasing in complexity... more As the device integration and relating lithography process progressively increasing in complexity for each new technology node, there is a growing need for a more integrated approach to process control. There are several insitu metrology sensors in ASML scanners that can be used to improve not only the scanner equipment and lithography process stability but also to compensate for other
Storage and Retrieval for Image and Video Databases, 1999
This work analyzes the contributions to CD variation by building 3 predictive models that describ... more This work analyzes the contributions to CD variation by building 3 predictive models that describe linewidth variation. The first model uses an exposure and focus budget analysis to create distributions that are used as input into a Monte Carlo analysis, where the output is a distribution of ...
EUV technology with its state-of-the-art tool generation equipped with a Numerical Aperture (NA) ... more EUV technology with its state-of-the-art tool generation equipped with a Numerical Aperture (NA) of 0.33 and providing 13 nm resolution is on the brink of entering high volume manufacturing. Extending the roadmap down to a resolution of 8 nm requires a high-NA successor tool. ASML and ZEISS are jointly developing an EUV scanner system with an NA of 0.55 to enable the continuation of Moore’s law throughout the next decade. In this paper we motivate the top-level requirements of this high-NA tool, deduce implications on system design and present how they are solved in the tool. In particular, we address implications of the high-NA leading to large mirror sizes, introduction of a central obscuration and an anamorphic lens design resulting in the transition from full to half field. A consequence of the high-NA is a reduced depth of focus which is dealt with by an improved focus control of the system. The aberration level of the high-NA tool will be significantly reduced w.r.t. the NA 0....
Lithography for Semiconductor Manufacturing II, 2001
ABSTRACT A novel analysis methodology, for the breakdown and ranking of the different sources of ... more ABSTRACT A novel analysis methodology, for the breakdown and ranking of the different sources of line width variation, is presented. The method is applied both on the level of an individual wafer, and on multiple wafers in a batch. It enables evaluation of the exposure tool performance in relation to other contributors to line width variation. Separation of the contribution of the exposure tool component from other sources of line width errors, requires sufficiently dense and accurate sampling of the CD variation across a wafer, because of the statistical confidence needed in the budget breakdown analysis. These requirements are met by taking advantage of the excellent performance of Electrical Line Width Measurements in terms of repeatability and data acquisition speed. The exposure tool is found to be only responsible for a limited part of the total CD uniformity across the batch. The largest contributors are reticle and processing components at individual wafer level and the CD offset between the wafers at batch level. The resist process component is larger than expected due to a dominating swirl shaped artifact caus4ed by non optimal track performance. A refined analysis of the full wafer CD uniformity was focused on the systematic contributions from the H-V difference and scan direction. Both of these components appear to be only a small part of the intra die budget.
2006 IEEE International Symposium on Semiconductor Manufacturing, 2006
As the device integration and relating lithography process progressively increasing in complexity... more As the device integration and relating lithography process progressively increasing in complexity for each new technology node, there is a growing need for a more integrated approach to process control. There are several insitu metrology sensors in ASML scanners that can be used to improve not only the scanner equipment and lithography process stability but also to compensate for other
2006 IEEE International Symposium on Semiconductor Manufacturing, 2006
As the device integration and relating lithography process progressively increasing in complexity... more As the device integration and relating lithography process progressively increasing in complexity for each new technology node, there is a growing need for a more integrated approach to process control. There are several insitu metrology sensors in ASML scanners that can be used to improve not only the scanner equipment and lithography process stability but also to compensate for other
Storage and Retrieval for Image and Video Databases, 1999
This work analyzes the contributions to CD variation by building 3 predictive models that describ... more This work analyzes the contributions to CD variation by building 3 predictive models that describe linewidth variation. The first model uses an exposure and focus budget analysis to create distributions that are used as input into a Monte Carlo analysis, where the output is a distribution of ...
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