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Etching and a disordered overlayer on the Ge(100)-S surface
Etching and a disordered overlayer on the Ge(100)-S surface
Applied Surface Science, 1997
M. Gothelid
Abstract
High resolution core level photoelectron spectroscopy (PES) and scanning tunneling microscopy (STM) have been used to study the adsorption and desorption of S on and off the Ge(100) surface. The previously proposed bridge adsorption site of S is consistent with our results at low coverage. At saturation the substrate contains several GeSx species, with x=0.5 to 4. Both photoemission and
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