ABSTRACT Amorphous films of Sn/Ge alloy were produced by coevaporation of tin and germanium onto substrates held at or below room temperature. A compositional gradient was introduced by means of a mask placed at an appropriate distance... more
ABSTRACT Amorphous films of Sn/Ge alloy were produced by coevaporation of tin and germanium onto substrates held at or below room temperature. A compositional gradient was introduced by means of a mask placed at an appropriate distance from the substrate; transmission electron microscopy and energy-dispersive X-ray analysis were used to determine the local structure and chemical composition. The as-deposited films were amorphous and single-phase up to 15 at% Sn, or up to 45 at% Sn for substrates cooled to 100 K during deposition. When heated to 120 °C, the films crystallized to a diamond-cubic structure, with some precipitation of metallic tin.
Thermo-activated restructuring at the micro-, meso-and macro-levels of a binary alloy CuAu deviation from the stoichiometric composition are investigated. The laws of such rearrangements at these levels are identified.
This research article describes the evaluation of Third order elastic constants of pure and doped semiconductors e.g. Ge and Si; and the semiconductor binary alloys e.g. InSb and GaAs using Keating's theory. The obtained results have... more
This research article describes the evaluation of Third order elastic constants of pure and doped semiconductors e.g. Ge and Si; and the semiconductor binary alloys e.g. InSb and GaAs using Keating's theory. The obtained results have been explained in terms of the isotropic and anisotropic behaviour of these systems.
