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13 pages, 4993 KiB  
Article
The Development of a 3D Magnetic Field Scanner Using Additive Technologies
by Artem Sobko, Nikolai Yudanov, Larissa V. Panina and Valeriya Rodionova
Hardware 2024, 2(4), 279-291; https://doi.org/10.3390/hardware2040014 - 11 Nov 2024
Viewed by 293
Abstract
Visualizing magnetic fields is essential for studying the operation of electromagnetic systems and devices that use permanent magnets or magnetic particles. However, commercial devices for this purpose are often expensive due to their complex designs, which may not always be necessary for specific [...] Read more.
Visualizing magnetic fields is essential for studying the operation of electromagnetic systems and devices that use permanent magnets or magnetic particles. However, commercial devices for this purpose are often expensive due to their complex designs, which may not always be necessary for specific research needs. This work presents a method for designing an automated laboratory setup for magnetic cartography, utilizing a 3D printer to produce structural plastic components for the scanner. The assembly process is thoroughly described, covering both the hardware and software aspects. Spatial resolution and mapping parameters, such as the number of data points and the collection time, were configured through software. Multiple tests were conducted on samples featuring flat inductive coils on a printed circuit board, providing a reliable model for comparing calculated and measured results. The scanner offers several advantages, including a straightforward design, readily available materials and components, a large scanning area (100 mm × 100 mm × 100 mm), a user-friendly interface, and adaptability for specific tasks. Additionally, the integration of a pre-built macro enables connection to any PC running Windows, while the open-source microcontroller code allows users to customize the scanner’s functionality to meet their specific requirements. Full article
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12 pages, 688 KiB  
Article
Angularly Selective Enhanced Vortex Screening in Extremely Layered Superconductors with Tilted Columnar Defects
by Gonzalo Rumi, Vincent Mosser, Marcin Konczykowski and Yanina Fasano
Condens. Matter 2024, 9(4), 37; https://doi.org/10.3390/condmat9040037 - 27 Sep 2024
Viewed by 484
Abstract
We report on two mechanisms of angularly selective enhanced screening in the solid vortex phase of extremely layered superconductors with tilted columnar defects (CDs). We study Bi2Sr2CaCu2O8+δ samples with different densities of CD tilted 45° [...] Read more.
We report on two mechanisms of angularly selective enhanced screening in the solid vortex phase of extremely layered superconductors with tilted columnar defects (CDs). We study Bi2Sr2CaCu2O8+δ samples with different densities of CD tilted 45° from the c-axis, and conduct local ac Hall magnetometry measurements, probing the sustainable current of the vortex system. We reveal two types of maxima in sustainable current for particular directions, detected as dips in the magnetic transmittivity of the vortex system. First, for a smaller number of vortices than of defects, an enhancement of screening is detected at an angular location Θdip1∼45° for H applied close to the direction of CD. For a larger number of vortices than of CD, Θdip1 decreases towards the ab-plane direction upon warming. Second, a pair of additional dips in transmittivity are detected at angles Θdip2 closer to, and quite symmetric with, the ab-plane. These two types of angularly selective enhanced screening reveal the effective pinning by tilted CD even for the composite vortex lattices nucleated in tilted fields in Bi2Sr2CaCu2O8+δ. Full article
(This article belongs to the Section Superconductivity)
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18 pages, 3698 KiB  
Article
Electronic Properties of Group-III Nitride Semiconductors and Device Structures Probed by THz Optical Hall Effect
by Nerijus Armakavicius, Philipp Kühne, Alexis Papamichail, Hengfang Zhang, Sean Knight, Axel Persson, Vallery Stanishev, Jr-Tai Chen, Plamen Paskov, Mathias Schubert and Vanya Darakchieva
Materials 2024, 17(13), 3343; https://doi.org/10.3390/ma17133343 - 5 Jul 2024
Cited by 1 | Viewed by 1146
Abstract
Group-III nitrides have transformed solid-state lighting and are strategically positioned to revolutionize high-power and high-frequency electronics. To drive this development forward, a deep understanding of fundamental material properties, such as charge carrier behavior, is essential and can also unveil new and unforeseen applications. [...] Read more.
Group-III nitrides have transformed solid-state lighting and are strategically positioned to revolutionize high-power and high-frequency electronics. To drive this development forward, a deep understanding of fundamental material properties, such as charge carrier behavior, is essential and can also unveil new and unforeseen applications. This underscores the necessity for novel characterization tools to study group-III nitride materials and devices. The optical Hall effect (OHE) emerges as a contactless method for exploring the transport and electronic properties of semiconductor materials, simultaneously offering insights into their dielectric function. This non-destructive technique employs spectroscopic ellipsometry at long wavelengths in the presence of a magnetic field and provides quantitative information on the charge carrier density, sign, mobility, and effective mass of individual layers in multilayer structures and bulk materials. In this paper, we explore the use of terahertz (THz) OHE to study the charge carrier properties in group-III nitride heterostructures and bulk material. Examples include graded AlGaN channel high-electron-mobility transistor (HEMT) structures for high-linearity devices, highlighting the different grading profiles and their impact on the two-dimensional electron gas (2DEG) properties. Next, we demonstrate the sensitivity of the THz OHE to distinguish the 2DEG anisotropic mobility parameters in N-polar GaN/AlGaN HEMTs and show that this anisotropy is induced by the step-like surface morphology. Finally, we present the temperature-dependent results on the charge carrier properties of 2DEG and bulk electrons in GaN with a focus on the effective mass parameter and review the effective mass parameters reported in the literature. These studies showcase the capabilities of the THz OHE for advancing the understanding and development of group-III materials and devices. Full article
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14 pages, 10332 KiB  
Article
An Advanced Hall Element Array-Based Device for High-Resolution Magnetic Field Mapping
by Tan Zhou, Jiangwei Cai and Xin Zhu
Sensors 2024, 24(12), 3773; https://doi.org/10.3390/s24123773 - 10 Jun 2024
Viewed by 1310
Abstract
The precise mapping of magnetic fields emitted by various objects holds critical importance in the fabrication of industrial products. To meet this requirement, this study introduces an advanced magnetic detection device boasting high spatial resolution. The device’s sensor, an array comprising 256 unpackaged [...] Read more.
The precise mapping of magnetic fields emitted by various objects holds critical importance in the fabrication of industrial products. To meet this requirement, this study introduces an advanced magnetic detection device boasting high spatial resolution. The device’s sensor, an array comprising 256 unpackaged gallium arsenide (GaAs) Hall elements arranged in a 16 × 16 matrix, spans an effective area of 19.2 mm × 19.2 mm. The design maintains a 1.2 mm separation between adjacent elements. For enhanced resolution, the probe scans the sample via a motorized rail system capable of executing specialized movement patterns. A support structure incorporated into the probe minimizes the measurement distance to below 0.5 mm, thereby amplifying the magnetic signal and mitigating errors from nonparallel probe–sample alignment. The accompanying interactive software utilizes cubic spline interpolation to transform magnetic readings into detailed two- and three-dimensional magnetic field distribution maps, signifying field strength and polarity through variations in color intensity and amplitude sign. The device’s efficacy in accurately mapping surface magnetic field distributions of magnetic and magnetized materials was corroborated through tests on three distinct samples: a neodymium–iron–boron magnet, the circular magnetic array from a smartphone, and a magnetized 430 steel plate. These tests, focused on imaging quality and magnetic field characterization, underscore the device’s proficiency in nondestructive magnetic field analysis. Full article
(This article belongs to the Special Issue Advances in Magnetic Sensors and Their Applications)
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13 pages, 19295 KiB  
Article
Low-Temperature Migration-Enhanced Epitaxial Growth of High-Quality (InAs)4(GaAs)3/Be-Doped InAlAs Quantum Wells for THz Applications
by Linsheng Liu, Zhen Deng, Guipeng Liu, Chongtao Kong, Hao Du, Ruolin Chen, Jianfeng Yan, Le Qin, Shuxiang Song, Xinhui Zhang and Wenxin Wang
Crystals 2024, 14(5), 421; https://doi.org/10.3390/cryst14050421 - 29 Apr 2024
Viewed by 1149
Abstract
This investigation explores the structural and electronic properties of low-temperature-grown (InAs)4(GaAs)3/Be-doped InAlAs and InGaAs/Be-doped InAlAs multiple quantum wells (MQWs), utilizing migration-enhanced epitaxy (MEE) and conventional molecular beam epitaxy (MBE) growth mode. Through comprehensive characterization methods including transmission electron microscopy [...] Read more.
This investigation explores the structural and electronic properties of low-temperature-grown (InAs)4(GaAs)3/Be-doped InAlAs and InGaAs/Be-doped InAlAs multiple quantum wells (MQWs), utilizing migration-enhanced epitaxy (MEE) and conventional molecular beam epitaxy (MBE) growth mode. Through comprehensive characterization methods including transmission electron microscopy (TEM), Raman spectroscopy, atomic force microscopy (AFM), pump–probe transient reflectivity, and Hall effect measurements, the study reveals significant distinctions between the two types of MQWs. The (InAs)4(GaAs)3/Be-doped InAlAs MQWs grown via the MEE mode exhibit enhanced periodicity and interface quality over the InGaAs/Be-InAlAs MQWs grown through the conventional molecule beam epitaxy (MBE) mode, as evidenced by TEM. The AFM results indicate lower surface roughness for the (InAs)4(GaAs)3/Be-doped InAlAs MQWs by using the MEE mode. Raman spectroscopy reveals weaker disorder-activated modes in the (InAs)4(GaAs)3/Be-doped InAlAs MQWs by using the MEE mode. This originates from utilizing the (InAs)4(GaAs)3 short period superlattices rather than InGaAs, which suppresses the arbitrary distribution of Ga and In atoms during the InGaAs growth. Furthermore, pump–probe transient reflectivity measurements show shorter carrier lifetimes in the (InAs)4(GaAs)3/Be-doped InAlAs MQWs, attributed to a higher density of antisite defects. It is noteworthy that room temperature Hall measurements imply that the mobility of (InAs)4(GaAs)3/Be-doped InAlAs MQWs grown at a low temperature of 250 °C via the MEE mode is superior to that of InGaAs/Be-doped InAlAs MQWs grown in the conventional MBE growth mode, reaching 2230 cm2/V.s. The reason for the higher mobility of (InAs)4(GaAs)3/Be-doped InAlAs MQWs is that this short-period superlattice structure can effectively suppress alloy scattering caused by the arbitrary distribution of In and Ga atoms during the growth process of the InGaAs ternary alloy. These results exhibit the promise of the MEE growth approach for growing high-performance MQWs for advanced optoelectronic applications, notably for high-speed optoelectronic devices like THz photoconductive antennas. Full article
(This article belongs to the Special Issue Materials and Devices Grown via Molecular Beam Epitaxy)
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19 pages, 46658 KiB  
Article
Comparison of the Field Trapping Ability of MgB2 and Hybrid Disc-Shaped Layouts
by Michela Fracasso, Roberto Gerbaldo, Gianluca Ghigo, Daniele Torsello, Yiteng Xing, Pierre Bernstein, Jacques Noudem and Laura Gozzelino
Materials 2024, 17(5), 1201; https://doi.org/10.3390/ma17051201 - 5 Mar 2024
Viewed by 1026
Abstract
Superconductors have revolutionized magnet technology, surpassing the limitations of traditional coils and permanent magnets. This work experimentally investigates the field-trapping ability of a MgB2 disc at various temperatures and proposes new hybrid (MgB2-soft iron) configurations using a numerical approach based [...] Read more.
Superconductors have revolutionized magnet technology, surpassing the limitations of traditional coils and permanent magnets. This work experimentally investigates the field-trapping ability of a MgB2 disc at various temperatures and proposes new hybrid (MgB2-soft iron) configurations using a numerical approach based on the vector potential (A) formulation. The experimental characterization consists in measurements of trapped magnetic flux density carried out using cryogenic Hall probes located at different radial positions over the MgB2 sample, after a field cooling (FC) process and the subsequent removal of the applied field. Measurements were performed also as a function of the distance from the disc surface. The numerical modelling of the superconductor required the evaluation of the critical current density dependence on the magnetic flux density (Jc(B)) obtained through an iterative procedure whose output were successfully validated by the comparison between experimental and computed data. The numerical model, upgraded to also describe the in-field behavior of ARMCO soft iron, was then employed to predict the field-trapping ability of hybrid layouts of different shapes. The most promising results were achieved by assuming a hollow superconducting disc filled with a ferromagnetic (FM) cylinder. With such a geometry, optimizing the radius of the FM cylinder while the external dimensions of the superconducting disc are kept unchanged, an improvement of more than 30% is predicted with respect to the full superconducting disc, assuming a working temperature of 20 K. Full article
(This article belongs to the Special Issue Novel Superconducting Materials and Applications of Superconductivity)
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16 pages, 17872 KiB  
Article
Probing with Each Step: How a Walking Crab-like Robot Classifies Buried Cylinders in Sand with Hall-Effect Sensors
by John Grezmak and Kathryn A. Daltorio
Sensors 2024, 24(5), 1579; https://doi.org/10.3390/s24051579 - 29 Feb 2024
Viewed by 1024
Abstract
Shallow underwater environments around the world are contaminated with unexploded ordnances (UXOs). Current state-of-the-art methods for UXO detection and localization use remote sensing systems. Furthermore, human divers are often tasked with confirming UXO existence and retrieval which poses health and safety hazards. In [...] Read more.
Shallow underwater environments around the world are contaminated with unexploded ordnances (UXOs). Current state-of-the-art methods for UXO detection and localization use remote sensing systems. Furthermore, human divers are often tasked with confirming UXO existence and retrieval which poses health and safety hazards. In this paper, we describe the application of a crab robot with leg-embedded Hall effect-based sensors to detect and distinguish between UXOs and non-magnetic objects partially buried in sand. The sensors consist of Hall-effect magnetometers and permanent magnets embedded in load bearing compliant segments. The magnetometers are sensitive to magnetic objects in close proximity to the legs and their movement relative to embedded magnets, allowing for both proximity and force-related feedback in dynamically obtained measurements. A dataset of three-axis measurements is collected as the robot steps near and over different UXOs and UXO-like objects, and a convolutional neural network is trained on time domain inputs and evaluated by 5-fold cross validation. Additionally, we propose a novel method for interpreting the importance of measurements in the time domain for the trained classifier. The results demonstrate the potential for accurate and efficient UXO and non-UXO discrimination in the field. Full article
(This article belongs to the Section Sensors and Robotics)
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18 pages, 3870 KiB  
Article
Optical Absorption, Photocarrier Recombination Dynamics and Terahertz Dielectric Properties of Electron-Irradiated GaSe Crystals
by Svetlana A. Bereznaya, Ruslan A. Redkin, Valentin N. Brudnyi, Yury S. Sarkisov, Xinyang Su and Sergey Yu. Sarkisov
Crystals 2023, 13(11), 1562; https://doi.org/10.3390/cryst13111562 - 1 Nov 2023
Cited by 1 | Viewed by 1582
Abstract
Optical absorption spectra of 9 MeV electron-irradiated GaSe crystals were studied. Two absorption bands with the low-photon-energy threshold at 1.35 and 1.73 eV (T = 300 K) appeared in the transparency region of GaSe after the high-energy-electron irradiation. The observed absorption bands [...] Read more.
Optical absorption spectra of 9 MeV electron-irradiated GaSe crystals were studied. Two absorption bands with the low-photon-energy threshold at 1.35 and 1.73 eV (T = 300 K) appeared in the transparency region of GaSe after the high-energy-electron irradiation. The observed absorption bands were attributed to the defect states induced by Ga vacancies in two charge states, having the energy positions at 0.23 and 0.61 eV above the valence band maximum at T = 300 K. The optical pump-terahertz probe technique (OPTP) was employed to study the dark and photoexcited terahertz conductivity and charge carrier recombination dynamics at two-photon excitation of as-grown and 9 MeV electron-irradiated GaSe crystals. The measured values of the differential terahertz transmission at a specified photoexcitation condition were used to extract the terahertz charge carrier mobilities. The determined terahertz charge carrier mobility values were ~46 cm2/V·s and ~14 cm2/V·s for as-grown and heavily electron-irradiated GaSe crystals, respectively. These are quite close to the values determined from the Lorentz–Drude–Smith fitting of the measured dielectric constant spectra. The photo-injection-level-dependent charge carrier lifetimes were determined from the measured OPTP data, bearing in mind the model injection-level dependencies of the recombination rates governed by interband and trap-assisted Auger recombination, bulk and surface Shockley–Read–Hall (SRH) recombination and interband radiative transitions in the limit of a high injection level. It was found that GaSe possesses a long charge carrier lifetime (a~1.9 × 10−6 ps−1, b~2.7 × 10−21 cm3ps−1 and c~1.3 × 10−37 cm6ps−1), i.e., τ~0.53 μs in the limit of a relatively low injection, when the contribution from SRH recombination is dominant. The electron irradiation of as-grown GaSe crystals reduced the charge carrier lifetime at a high injection level due to Auger recombination through radiation-induced defects. It was found that the terahertz spectra of the dielectric constants of as-grown and electron-irradiated GaSe crystals can be fitted with acceptable accuracy using the Lorentz model with the Drude–Smith term accounting for the free-carrier conductivity. Full article
(This article belongs to the Section Inorganic Crystalline Materials)
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15 pages, 6279 KiB  
Article
Development of a Combined Horizontal and Vertical Correcting Magnet for Siam Photon Source II
by Supachai Prawanta, Prapaiwan Sunwong, Pariwat Singthong, Thongchai Leetha, Pajeeraphorn Numanoy, Warissara Tangyotkhajorn, Apichai Kwankasem, Visitchai Sooksrimuang, Sukho Kongtawong and Supat Klinkiew
Particles 2023, 6(4), 898-912; https://doi.org/10.3390/particles6040058 - 13 Oct 2023
Viewed by 1468
Abstract
A prototype of a combined horizontal and vertical correcting magnet was designed and fabricated for the 3 GeV storage ring of Siam Photon Source II, which will be the second synchrotron light source in Thailand. The magnet will be employed for fast-orbit feedback [...] Read more.
A prototype of a combined horizontal and vertical correcting magnet was designed and fabricated for the 3 GeV storage ring of Siam Photon Source II, which will be the second synchrotron light source in Thailand. The magnet will be employed for fast-orbit feedback correction, with a required magnetic field integral of approximately 8 Tesla.mm. The magnet pole and yoke were manufactured using laminated silicon steel to minimize hysteresis and eddy current losses during operation. Magnet modeling and magnetic field calculations were performed using Opera-3D. The size of the gap between the magnet poles is limited by the size of the vacuum chamber over which the magnet will be installed; in this case, it was designed to be 65 mm. Mechanical analysis of the structure of the magnet was performed using SOLIDWORKS and ANSYS. Magnetic field measurements were obtained using the Hall probe technique. The entire prototype, from its design to manufacturing and measurement, was completed in-house. This design will be appropriate for application at the Siam Photon Source II storage ring. Full article
(This article belongs to the Special Issue Generation and Application of High-Power Radiation Sources)
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18 pages, 25209 KiB  
Article
Robust Topological Edge States in C6 Photonic Crystals
by Daniel Borges-Silva, Carlos Humberto Oliveira Costa and Claudionor Gomes Bezerra
Photonics 2023, 10(9), 961; https://doi.org/10.3390/photonics10090961 - 22 Aug 2023
Cited by 2 | Viewed by 1816
Abstract
The study of photonic crystals has emerged as an attractive area of research in nanoscience in the last years. In this work, we study the properties of a two-dimensional photonic crystal composed of dielectric rods. The unit cell of the system is composed [...] Read more.
The study of photonic crystals has emerged as an attractive area of research in nanoscience in the last years. In this work, we study the properties of a two-dimensional photonic crystal composed of dielectric rods. The unit cell of the system is composed of six rods organized on the sites of a C6 triangular lattice. We induce a topological phase by introducing an angular perturbation ϕ in the pristine system. The topology of the system is then determined by using the so-called k.p perturbed model. Our results show that the system presents a topological and a trivial phase, depending on the sign of the angular perturbation ϕ. The topological character of the system is probed by evaluating the electromagnetic energy density and analyzing its distribution in the real space, in particular on the maximal Wyckoff points. We also find two edge modes at the interface between the trivial and topological photonic crystals, which present a pseudospin topological behavior. By applying the bulk-edge correspondence, we study the pseudospin edge modes and conclude that they are robust against defects, disorder and reflection. Moreover, the localization of the edge modes leads to the confinement of light and the interface behaves as a waveguide for the propagation of electromagnetic waves. Finally, we show that the two edge modes present energy flux propagating in opposite directions, which is the photonic analogue of the quantum spin Hall effect. Full article
(This article belongs to the Special Issue Photonics: Theory, Technologies and Applications)
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16 pages, 4492 KiB  
Article
Electrical Relaxation and Transport Properties of ZnGeP2 and 4H-SiC Crystals Measured with Terahertz Spectroscopy
by Vladimir I. Voevodin, Valentin N. Brudnyi, Yury S. Sarkisov, Xinyang Su and Sergey Yu. Sarkisov
Photonics 2023, 10(7), 827; https://doi.org/10.3390/photonics10070827 - 16 Jul 2023
Cited by 3 | Viewed by 1526
Abstract
Terahertz photoconductivity and charge carrier recombination dynamics at two-photon (ZnGeP2) and three-photon (4H-SiC) excitation were studied. Thermally annealed, high-energy electron-irradiated and Sc-doped ZnGeP2 crystals were tested. The terahertz charge carrier mobilities were extracted from both the differential terahertz transmission at [...] Read more.
Terahertz photoconductivity and charge carrier recombination dynamics at two-photon (ZnGeP2) and three-photon (4H-SiC) excitation were studied. Thermally annealed, high-energy electron-irradiated and Sc-doped ZnGeP2 crystals were tested. The terahertz charge carrier mobilities were extracted from both the differential terahertz transmission at a specified photoexcitation condition and the Drude–Smith fitting of the photoconductivity spectra. The determined terahertz charge carrier mobility values are ~453 cm2/V·s for 4H-SiC and ~37 cm2/V·s for ZnGeP2 crystals. The charge carrier lifetimes and the contributions from various recombination mechanisms were determined at different injection levels using the model, which takes into account the influence of bulk and surface Shockley–Read–Hall (SRH) recombination, interband radiative transitions and interband and trap-assisted Auger recombination. It was found that ZnGeP2 possesses short charge carrier lifetimes (a~0.01 ps−1, b~6 × 10−19 cm3·ps−1 and c~7 × 10−40 cm6·ps−1) compared with 4H-SiC (a~0.001 ps−1, b~3 × 10−18 cm3·ps−1 and c~2 × 10−36 cm6·ps−1), i.e., τ~100 ps and τ~1 ns at the limit of relatively low injection, when the contribution from Auger and interband radiative recombination is small. The thermal annealing of as-grown ZnGeP2 crystals and the electron irradiation reduced the charge carrier lifetime, while their doping with 0.01 mass % of Sc increased the charger carrier lifetime and reduced mobility. It was found that the dark terahertz complex conductivity of the measured crystals is not fitted by the Drude–Smith model with reasonable parameters, while their terahertz photoconductivity can be fitted with acceptable accuracy. Full article
(This article belongs to the Special Issue Ultrafast Optics and Applications)
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25 pages, 7467 KiB  
Article
Recording the Magnetic Field Produced by an Undersea Energy Generating Device: A Low-Cost Alternative
by Victor Luna, Rodolfo Silva, Edgar Mendoza and Iza Canales-García
J. Mar. Sci. Eng. 2023, 11(7), 1423; https://doi.org/10.3390/jmse11071423 - 15 Jul 2023
Cited by 2 | Viewed by 2510
Abstract
This work describes the characteristics of a device capable of detecting the magnetic field generated by a submerged electrical conductor. This low-cost apparatus is based on the open-source Arduino platform and offers the possibility of monitoring magnetic fields generated by undersea cables. Measuring [...] Read more.
This work describes the characteristics of a device capable of detecting the magnetic field generated by a submerged electrical conductor. This low-cost apparatus is based on the open-source Arduino platform and offers the possibility of monitoring magnetic fields generated by undersea cables. Measuring magnetic fields generated by undersea cables facilitates the development of technologies that will harness marine energy potential. The research is based on published parameters of magnetic field values generated by existing submarine cables. A coil was built to simulate an approximate magnetic field at 10 mT. The magnetic field generated by the coil was used as a reference standard. The device developed has a measurement probe built with an array of SS49E Hall effect sensors placed in a straight line and separated 5 cm from each other. A DS18B20 temperature sensor was added to make the necessary corrections and cancel the influence of temperature during the measurements. A microSD card module was attached to store continuous magnetic field measurements. The device was adjusted under strict laboratory conditions. The functionality of the device developed was confirmed by two samplings in the sea. In these samples, the magnetic field generated by the coil was measured in the entire water column from a depth of 3 m to 150 m. Results indicate that the prototype can successfully perform the necessary functions to quantify the underwater magnetic field accurately with about 10 µT accuracy. Full article
(This article belongs to the Special Issue Interface between Offshore Renewable Energy and the Environment)
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21 pages, 5328 KiB  
Article
Experimental Prototype of Electromagnetic Emissions for Biotechnological Research: Monitoring Cocoa Bean Fermentation Parameters
by Tania María Guzmán-Armenteros, Jenny Ruales, José Villacís-Chiriboga and Luis Santiago Guerra
Foods 2023, 12(13), 2539; https://doi.org/10.3390/foods12132539 - 29 Jun 2023
Cited by 4 | Viewed by 1993
Abstract
A Helmholtz-type electromagnetic emission device, which uses an oscillating magnetic field (OMF), with potential applications in biotechnological research, was built and validated. The coils were connected to an alternating current (AC) generator to generate a 0.5 to 110 mT field at their center. [...] Read more.
A Helmholtz-type electromagnetic emission device, which uses an oscillating magnetic field (OMF), with potential applications in biotechnological research, was built and validated. The coils were connected to an alternating current (AC) generator to generate a 0.5 to 110 mT field at their center. OMF measurements were performed with a Hall effect sensor with a digital signal connection (Arduino nano) and data output to a PC using LabVIEW v2017SP1 software. The fermentation process of the cocoa bean variety CCN 51, exposed to four levels of OMF density for 60 min (0, 5, 40, and 80 mT/60 min), was analyzed. Different variables of the grain fermentation process were evaluated over six days. The ANOVA test probed the device’s linearity, accuracy, precision, repeatability, reliability, and robustness. Moreover, CCN 51 cocoa beans’ EMF-exposure effect was evaluated under different OMF densities for 60 min. The results show the validity of the equipment under working conditions and the impact of EMF (electromagnetic fields) on the yield, deformation, and pH of cocoa beans. Thus, we concluded that the operation of the prototype is valid for use in biotechnological studies. Full article
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11 pages, 2592 KiB  
Article
Determination of the Magnetic Intermediate Permeability of Special Materials Based on FEM-Simulation and Hall-Sensor Measurement
by Frank Denk and Tobias Hofbauer
Magnetism 2023, 3(2), 169-179; https://doi.org/10.3390/magnetism3020014 - 19 Jun 2023
Cited by 1 | Viewed by 2193
Abstract
This document presents the process flow and the experimental conditions for calculating the static magnetic intermediate permeability of a specimen with a dedicated geometrical contour and surface for simulation parameter of metal detection systems. In this case, intermediate is explained and defined as [...] Read more.
This document presents the process flow and the experimental conditions for calculating the static magnetic intermediate permeability of a specimen with a dedicated geometrical contour and surface for simulation parameter of metal detection systems. In this case, intermediate is explained and defined as probes with a magnetic permeability between 10 and 1000. An analysis of recent and current measurement standards as well as similar simulation principles leads to the contribution value of this new hybrid process flow. To calculate the permeability value in a first step, an electromagnetic circuit was constructed and excited with a defined electrical DC current with a dedicated tolerance for generating a static approximated homogenic magnetic field in a defined air gap space sector. Additionally, to the H-field generation part double copper coil, two magnetic ferrite cylinders with known permeability were used. The electrical and magnetic circuit has been modeled by an Ansys FEM Electronic Desktop software; the solver is magnetic static. Specifically, the simulated magnetic field distribution of the airgap was evaluated by using different Hall sensor elements with different tolerances. Subsequently, the electromagnetic circuit was expanded by implementing different cylindrical and cube shaped probes on a defined position inside the air gap sector with homogenic magnetization. Moreover, based on the analysis of the air gap structure without the probes, a detailed 3D-FEM model of the air gap magnetic field with special probes was established, which provides the environmental field distribution of the probes. The simulation models were compared with the corresponding Hall sensor measurements, which proved the high accuracy experimental validity of the models established in this paper. Finally, some key features related to parameter variations in the electromagnetic circuit were extracted, which can significantly reflect the characteristics of the robustness of the measurement principle. The main findings reported in this paper will be beneficial for magnetic parameter settings in electromagnetic simulation. Full article
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10 pages, 2897 KiB  
Article
Development of Type A Quadrupole Magnet for Siam Photon Source II
by Supachai Prawanta, Thongchai Leetha, Pariwat Singthong, Pajeeraphorn Numanoy, Apichai Kwankasem, Visitchai Sooksrimuang, Chaiyut Preecha, Supat Klinkiew and Prapaiwan Sunwong
Particles 2023, 6(2), 664-673; https://doi.org/10.3390/particles6020039 - 9 Jun 2023
Viewed by 2075
Abstract
A prototype of a type A quadrupole magnet has been designed and manufactured for the 3 GeV storage ring of Siam Photon Source II, the second synchrotron light source in Thailand. The required quadrupole gradient is 51 T/m with the magnet effective length [...] Read more.
A prototype of a type A quadrupole magnet has been designed and manufactured for the 3 GeV storage ring of Siam Photon Source II, the second synchrotron light source in Thailand. The required quadrupole gradient is 51 T/m with the magnet effective length being 162 mm. Magnet modeling and magnetic field calculation were performed using Radia and Opera-3D. The bore radius of the magnet is 16 mm. The magnet will be operated at the excitation of 5544 A-turns. A mechanical analysis of the magnet structure was performed in SOLIDWORKS and ANSYS, where the maximum deformation of 0.003 mm was found at the magnet poles, and the first-mode natural frequency was higher than 100 Hz. The magnet yoke is made of AISI 1006 low-carbon steel with a fabrication tolerance of ±0.020 mm. Magnet coils are water-cooled and made of high-purity copper. The temperature rise of the coils was below 3.0 °C at the maximum excitation of 6664 A-turns, which is 20% above the operating point. Magnetic field measurement was carried out using the Hall probe technique. The measured magnetic field and coil temperature of the prototype show good agreement with the calculations. Full article
(This article belongs to the Special Issue Generation and Application of High-Power Radiation Sources)
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