Search Results (110)

A novel stress suppression design for flexible RF MEMS switches has been presented and demonstrated through theoretical and experimental research to isolate the stress caused by substrate bending. An RF MEMS switch with an S-shaped microspring structure was fabricated by the two-step etching process as a developmental step toward miniaturization and high reliability. The RF MEMS switches with an S-shaped microspring exhibited superior microwave performance and stable driving voltage under different substrate curvatures compared to the conventional non-microspring switches, demonstrating that the bending stress is successfully suppressed by the S-shaped microspring and the island structure. Furthermore, this innovative design could be easily extended to other flexible devices. Full article

This study presents the design and simulation of an RF MEMS variable capacitor with a high tuning ratio and high linearity factor of capacitance–voltage response. An electrostatic torsion actuator with planar and non-planar structures is presented to obtain the high tuning ratio by avoiding the occurrence of pull-in point. In the proposed design, the capacitor plate is connected to the electrostatic actuators by using the s-shaped beam. The proposed design shows a 138% tuning ratio with the planar structure of the actuator and 167% tuning ratio by implementing the non-planar structure. A linearity factor of 99% is attained by adjusting the rates at which the capacitor plate rises as the actuation voltage increases and the rate at which the capacitance decreases as the plate rises. Parametric optimization of the design is performed by utilizing the finite element method (FEM) analysis and high-frequency structural simulator (HFSS) analysis to obtain an optimized high-tuning ratio RF MEMS varactor at low actuation voltage. S-parameters of the design are presented on HFSS, with a 50 ohm coplanar waveguide (CPW) serving as the transmission line. The proposed RF MEMS varactor can be utilized in tunable RF devices. Full article

In this paper, different concepts of reconfigurable RF-MEMS attenuators for beamforming applications are proposed and critically assessed. Capitalizing on the previous part of this work, the 1-bit attenuation modules featuring series and shunt resistors and low-voltage membranes (7–9 V) are employed to develop a 3-bit attenuator for fine-tuning attenuations (<−10 dB) in the 24.25–27.5 GHz range. More substantial attenuation levels are investigated using fabricated samples of coplanar waveguide (CPW) sections equipped with Pi-shaped resistors aiming at attenuations of −15, −30, and −45 dB. The remarkable electrical features of such configurations, showing flat attenuation curves and limited return losses, and the investigation of a switched-line attenuator design based on them led to the final proposed concept of a low-voltage 24-state attenuator. Such a simulated device combines the Pi-shaped resistors for substantial attenuations with the 3-bit design for fine-tuning operations, showing a maximum attenuation level of nearly −50 dB while maintaining steadily flat attenuation levels and limited return losses (<−11 dB) along the frequency band of interest. Full article

This paper introduces a broadband triple-pole triple-throw (3P3T) RF MEMS switch with a frequency range from DC to 380 GHz. The switch achieves precise signal control and efficient modulation through its six-port design. It achieves an insertion loss of −0.66 dB across its frequency range, with isolation and return loss metrics of −32 dB and −15 dB, respectively. With its low actuation voltage of 6.8 V and rapid response time of 2.28 μs, the switch exemplifies power-efficient and prompt switching performance. The compact design is ideal for integration into space-conscious systems. This switch is pivotal for 6G research and has potential applications in satellite communications, military radar systems, and next-generation radio applications that require multi-antenna access. Full article

The miniaturization and low power consumption characteristics of RF MEMS (Radio Frequency Microelectromechanical System) switches provide new possibilities for the development of microsatellites and nanosatellites, which will play an increasingly important role in future space missions. This paper provides a comprehensive review of RF MEMS switches in satellite communication, detailing their working mechanisms, performance optimization strategies, and applications in reconfigurable antennas. It explores various driving mechanisms (electrostatic, piezoelectric, electromagnetic, thermoelectric) and contact mechanisms (capacitive, ohmic), highlighting their advantages, challenges, and advancements. The paper emphasizes strategies to enhance switch reliability and RF performance, including minimizing the impact of shocks, reducing driving voltage, improving contacts, and appropriate packaging. Finally, it discusses the enormous potential of RF MEMS switches in future satellite communications, addressing their technical advantages, challenges, and the necessity for further research to optimize design and manufacturing for broader applications and increased efficiency in space missions. The research findings of this review can serve as a reference for further design and improvement of RF MEMS switches, which are expected to play a more important role in future aerospace communication systems. Full article

The performance consistency of an RF MEMS switch matrix is a crucial metric that directly impacts its operational lifespan. An improved crossbar-based RF MEMS switch matrix topology, SR-Crossbar, was investigated in this article. An optimized port configuration scheme was proposed for the RF MEMS switch matrix. Both the utilization probability of individual switch nodes and the path lengths in the switch matrix achieve their best consistency simultaneously under the proposed port configuration scheme. One significant advantage of this scheme lies in that it only adjusts the positions of the input and output ports, with the topology and individual switch nodes kept unchanged. This grants it a high level of generality and feasibility and also introduces an additional degree of freedom for optimizations. In this article, a universal utilization probability function of single nodes was constructed and an optimization objective function for the SR-Crossbar RF MEMS switch matrix was formulated, which provide a convenient approach to directly solving the optimized port configuration scheme for practical applications. Simulations to demonstrate the optimized dynamic and static consistencies were conducted. For an 8 × 8 SR-Crossbar switch matrix, the standard deviations of contact resistances of 128 units and losses of all 64 paths decreased from 1.00 and 0.42 to 0.51 and 0.23, respectively. These results aligned closely with theoretical calculations derived from the proposed model. Full article

Electrostatically actuated microelectromechanical system (MEMS) switches with fixed- fixed beams were fabricated. FEM modeling was used to calculate the contributions of stress in the fabricated beams from the measured values of pull-in voltage. The reported study provides useful guidelines to optimize the design of fixed-fixed beams, in order to reduce the stress contributions for the successful development of efficient and reliable electrostatically actuated MEMS devices. Full article

This paper describes different variants of broadband and simple attenuator modules for beamforming applications, based on radio frequency micro electro-mechanical systems (RF-MEMS), framed within coplanar waveguide (CPW) structures. The modules proposed in the first part of this work differ in their actuation voltage, topology, and desired attenuation level. Fabricated samples of basic 1-bit attenuation modules, characterized by a moderate footprint of 690 × 1350 µm² and aiming at attenuation levels of −2, −3, and −5 dB in the 24.25–27.5 GHz range, are presented in their variants featuring both low actuation voltages (5–9 V) as well as higher values (~45 V), the latter ones ensuring larger mechanical restoring force (and robustness against stiction). Beyond the fabrication non-idealities that affected the described samples, the substantial agreement between simulations and measurement outcomes proved that the proposed designs could provide precise attenuation levels up to 40 GHz, ranging up to nearly −3 dB and −5 dB for the series and shunt variants, respectively. Moreover, they could be effective building blocks for future wideband and reconfigurable RF-MEMS attenuators. In fact, in the second part of this work, combinations of the discussed cells and other configurations meant for larger attenuation levels are investigated. Full article

Thin-film piezoelectrics are widely investigated for actuators and energy harvesters, but there are few alternatives to toxic lead zirconate titanate. Biocompatible Ca- and Zr-modified BaTiO₃ (BCZT) is one of the most promising lead-free alternatives due to its high piezoelectric response. However, the dielectric/piezoelectric properties and structural integrity of BCZT films, which are crucial for their applications, are strongly influenced by the substrate upon which the film is grown and the related processing methods. Here, the in-plane stress, microstructure, dielectric, and piezoelectric properties of 100–500 nm thick high-temperature RF-sputtered BCZT films on industrially relevant Si-based substrates were investigated. Obtaining polycrystalline piezoelectric films required deposition temperatures ≥ 700 °C, but this induced tensile stresses of over 1500 MPa, which caused cracking in all films thicker than 200 nm. This degraded the dielectric, piezoelectric, and ferroelectric properties of films with larger electrode areas for applications. Films on SrTiO₃, on the other hand, had a compressive residual stress, with fewer defects and no cracks. The grain size and surface roughness increased with increasing deposition temperature. These findings highlight the challenges in processing BCZT films and their crucial role in advancing lead-free piezoelectric technologies for actual device applications. Full article

We present a differential wireless passive sensor based on a miniature antenna associated with a MEMS capacitive pressure sensor. In this configuration, a change in the external pressure results in a shift of the antenna resonance frequency and, thus, a variation in the antenna Radar Cross Section (RCS) detectable from a distance of a few meters. The MEMS and the antenna are modelled and simulated, and a co-design procedure is developed to optimize their performance. The MEMS are fabricated on a 200-mm technological platform and characterized. A specific setup was conceived to characterize the antenna sensor as a function of pressure in an anechoic chamber. Full article

In this paper, a class of three series ohmic switches is presented, including its design principles, the simulation results, and the outcomes of the measurements performed on the first batch of fabricated samples. The design of the adopted membranes is based on meandered beams, targeting a reduced actuation voltage. The initial and promising electro-mechanical simulations, performed in an Ansys Workbench environment, predicted actuation voltages in the 5–8 V range, whereas the measurements highlighted slightly greater values. The electro-magnetic behavior of such devices demonstrated a general and qualitative agreement with the simulations performed in the Ansys HFSS environment, with a satisfying performance in terms of return loss (<−20.22 dB) and isolation (<−14.86 dB) along the 5–30 GHz interval. Full article

A contact is the key structure of RF MEMS (Radio Frequency Microelectromechanical System) switches, which has a direct impact on the switch’s electrical and mechanical properties. In this paper, the implementation of highly reliable contacts for direct-contact RF MEMS switches is provided. As a soft metal material, gold has the advantages of low contact resistance, high chemical stability, and mature process preparation, so it is chosen as the metal material for the beam structure as well as the contacts of the switch. However, a Pt film is used in the bottom contact area to enhance the reliability of the contact. Three kinds of contacts with various shapes are fabricated using different processes. Particularly, a circular-shaped contact is obtained by dry/wet combined processes. The detailed fabrication process of the contacts as well as the Pt film on the bottom contact area are given. The experimental test shows that the contact shape has little effect on the RF performance of the switches. However, the circular contact shows better reliability than other contacts and can work well even after 1.2 × 10⁹ cycles. Full article

Glass has emerged as a highly versatile substrate for various sensor and MEMS packaging applications, including electromechanical, thermal, optical, biomedical, and RF devices, due to its exceptional properties such as high geometrical tolerances, outstanding heat and chemical resistance, excellent high-frequency electrical properties, and the ability to be hermetically sealed. In these applications, Through Glass Via (TGV) technology plays a vital role in manufacturing and packaging by creating electrical interconnections through glass substrates. This paper provides a comprehensive summary of the research progress in TGV fabrication along with its integrations, including through via formation and metallization. This paper also reviews the significant qualification and reliability achievements obtained by the scientific community for TGV technology. Additionally, this paper summarizes the application of TGV technology in various sensors such as MEMS sensors and discusses the potential applications and future development directions of TGV technology. Full article

Given the shortage of spectrum resources and the demand for communication systems of diminutive size, multi-function, and adaptive characteristics, this paper proposes an L-slot frequency reconfigurable antenna based on the MEMS switch. The antenna size is 4.07 × 5.27 mm² and is suitable for the U-band. The antenna structure consists of two RF MEMS switches, a Rogers RT5880 dielectric substrate, an L-slot patch, and a full-coverage ground. The switch is of a series contact structure and is arranged at the corner of an L-slot. By controlling the on and off state of the switch, the antenna can switch between four states of 42.36, 47.65, 53.13, and 56.72 GHz. According to the simulation results in CST STUDIO SUITE 2018, the maximum gain of the antenna is 7.90 dB, the impedance bandwidth of each state is above 1 GHz, and the direction is mainly consistent. The antenna can meet the demand for multi-frequency millimeter wave communication. Full article

Triangular resonators re-shaped into Sierpinski geometry and U-shaped resonators were designed, linking them with single-pole-double-through (SPDT) RF MEMS switches to provide frequency tuning for potential applications in the K-Band. Prototypes of band-stop narrowband filters working around 20 GHz and 26 GHz, interesting for RADAR and satellite communications, were studied in a coplanar waveguide (CPW) configuration, and the tuning was obtained by switching between two paths of the devices loaded with different resonators. As a result, dual-band operation or fine-tuning could be obtained depending on the choice of the resonator, acting as a building block. The studied filters belong to the more general group of devices inspired by a metamaterial design. Full article