Optoelectronic Materials, 2nd Volume

Topic Information

Dear Colleagues,

Optoelectronic materials have been developed for almost a century since studies of their optical and electronic properties were first reported in the 1910s. In the 1960s and 1970s, interest in optoelectronic materials was intensified because of the discovery of electroluminescence in conducting polymers and molecular crystals. Moreover, there has been a real surge in interest in the organic and inorganic field of these materials over the past 20 years because of significant improvements in material design and purification, which resulted in dramatic improvements in material performance. Currently, optoelectronic materials are receiving extensive attention for their applications in electronic and optoelectronic devices, such as light-emitting diodes (LEDs or OLEDs), photorefractive (PR) devices, sensors, solar cells, thin-film transistors, etc. Of particular technological interest are low-cost solution-processed thin films that can be deposited on large areas and/or flexible substrates. Understanding the physical–chemical properties of these materials is crucial in the development of high-performance optoelectronic devices. The goals of this Topic are to provide a balanced assessment of the current understanding of the physical mechanisms that determine the optoelectronic properties of high-performance organic–inorganic materials, highlight the capabilities of various experimental techniques to characterize these materials, summarize the most important in-line device performance, and outline recent trends in the further development of the field. This Topic focuses on photoinduced processes and electronic properties for optoelectronic applications that rely on charge carrier photogeneration. Electronic applications (e.g., OFETs or spintronic devices) and optoelectronic applications (e.g., OLEDs) that do not rely on photogenerated charge generation, as well as photonic applications (e.g., exciton–photon coupling in microcavities), are also welcome in this Topic. We invite you to submit feature articles (or review papers) on the Topic “Optoelectronic Materials”. We are seeking original contributions focusing on, but not limited to, the following (or related) subtopics:

• Charge transport mechanisms in optoelectronic materials;
• Synthesis of organic and inorganic materials for optoelectronic applications;
• Theoretical and experimental methods in optoelectronic materials;
• High-mobility conjugated polymers;
• Photonic and electronic processes and interfacial phenomena in organic–inorganic hybrid materials;
• Emerging materials for optoelectronics;
• New insights of optical materials for optoelectronic applications;
• New photonic concepts to enhance the efficiency of optoelectronic materials;
• Heterogeneous integration of material on silicon platform.

Prof. Dr. Tzi-yi Wu
Dr. Ali Belarouci
Dr. Regis Orobtchouk
Topic Editors

Keywords

Participating Journals

Journal Name	Impact Factor	CiteScore	Launched Year	First Decision (median)	APC
Applied Sciences applsci	2.5	5.3	2011	17.8 Days	CHF 2400
Crystals crystals	2.4	4.2	2011	10.8 Days	CHF 2100
Electronic Materials electronicmat	-	2.8	2020	22.4 Days	CHF 1000
Nanomaterials nanomaterials	4.4	8.5	2010	13.8 Days	CHF 2900
Polymers polymers	4.7	8.0	2009	14.5 Days	CHF 2700

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Published Papers (5 papers)

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All Applied Sciences Crystals Electronic Materials Nanomaterials Polymers

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11 pages, 16875 KiB  

Open AccessArticle

Crystal Growth of LiNa₅Mo₉O₃₀ Crystals of High Optical Quality

by Nikolai Khokhlov, Ivan Grishchenko, Ekaterina Shevelkina, Denis Bindyug, Ekaterina Barkanova, Dmitry Denisov, Dmitry Demushkin, Ivan Telegin, Ekaterina Yezhikova, Igor Avetissov, Roman Avetisov, Alexey Konyashkin and Oleg Ryabushkin

Crystals 2024, 14(9), 792; https://doi.org/10.3390/cryst14090792 - 7 Sep 2024

Viewed by 458

Abstract

The bulk of the LiNa₅Mo₉O₃₀ (LNM) crystals were successfully grown in the [010] and [001] directions without internal inclusions and cracks, using the Czochralski method with a low temperature gradient. The crystal grown in the [010] direction showed [...] Read more.

The bulk of the LiNa₅Mo₉O₃₀ (LNM) crystals were successfully grown in the [010] and [001] directions without internal inclusions and cracks, using the Czochralski method with a low temperature gradient. The crystal grown in the [010] direction showed a tendency to twinning. The crystal grown in the [001] direction demonstrated high structural perfection (FWHM = 13″) for the (001) plane and high optical quality Δn ≈ 2 × 10⁻⁵. The laser-induced damage threshold was measured along a, b and c axes and was 12.2, 27.0 and 27.5 J/cm², respectively. The thermo-optical coefficient dn/dT was measured for the main crystallographic axes, which was −5.75 × 10⁻⁶, −20.2 × 10⁻⁶ and 3.65 × 10⁻⁶ K⁻¹ along the a, b and c axes, respectively. The second harmonic generation (SHG) was conducted in the crystalline LNM sample. The maximum efficiency value of 3.5% at a pump power of 12 W was achieved. Full article

(This article belongs to the Topic Optoelectronic Materials, 2nd Volume)

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10 pages, 1831 KiB  

Open AccessArticle

The Wannier-Mott Exciton, Bound Exciton, and Optical Phonon Replicas of Single-Crystal GaSe

by Long V. Le, Tran Thi Thu Huong, Tien-Thanh Nguyen, Xuan Au Nguyen, Thi Huong Nguyen, Sunglae Cho, Young Dong Kim and Tae Jung Kim

Crystals 2024, 14(6), 539; https://doi.org/10.3390/cryst14060539 - 8 Jun 2024

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Abstract

We report the absorption and photoluminescence spectra of GaSe single crystals in the near-edge region. The temperatures explored the range from 17 to 300 K. Specifically, at a temperature of 17 K, the photoluminescence spectrum reveals an interesting phenomenon: the Wannier-Mott exciton separates [...] Read more.

We report the absorption and photoluminescence spectra of GaSe single crystals in the near-edge region. The temperatures explored the range from 17 to 300 K. Specifically, at a temperature of 17 K, the photoluminescence spectrum reveals an interesting phenomenon: the Wannier-Mott exciton separates into two states. These states are a triplet state with an energy of 2.103 eV and a singlet state with an energy of 2.109 eV. The energy difference between these two states is 6 meV. Furthermore, the bound exciton (BX) can be localized at an energy of 2.093 eV. It is worth noting that its phonon replicas (BX-nLO) can be clearly distinguished up to the fourth order. Interestingly, the energy gaps between these replicas exhibit a consistent spacing of 7 ± 0.5 meV. This intriguing finding suggests a high-quality crystalline structure as well as a strong coupling between the phonon and BX-nLO. Additionally, at low temperatures, both the ground state (n = 1) at 2.11 eV and the excited state (n = 2) at 2.127 eV of free excitons can be observed. Full article

(This article belongs to the Topic Optoelectronic Materials, 2nd Volume)

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15 pages, 4567 KiB  

Open AccessArticle

Enhancement of Photo-Electrical Properties of CdS Thin Films: Effect of N₂ Purging and N₂ Annealing

by Gayan K. L. Sankalpa, Gayan R. K. K. G. R. Kumarasinghe, Buddhika S. Dassanayake and Gayan W. C. Kumarage

Electron. Mater. 2024, 5(1), 30-44; https://doi.org/10.3390/electronicmat5010003 - 13 Mar 2024

Cited by 1 | Viewed by 1241

Abstract

The impact of N₂ purging in the CdS deposition bath and subsequent N₂ annealing is examined and contrasted with conventional CdS films, which were deposited without purging and annealed in ambient air. All films were fabricated using the chemical bath deposition [...] Read more.

The impact of N₂ purging in the CdS deposition bath and subsequent N₂ annealing is examined and contrasted with conventional CdS films, which were deposited without purging and annealed in ambient air. All films were fabricated using the chemical bath deposition method at a temperature of 80 °C on fluorine-doped tin oxide glass slides (FTO). N₂ purged films were deposited by introducing nitrogen gas into the deposition bath throughout the CdS deposition process. Subsequently, both N₂ purged and un-purged films underwent annealing at temperatures ranging from 100 to 500 °C for one hour, either in a nitrogen or ambient air environment. Photoelectrochemical (PEC) cell studies reveal that films subjected to both N₂ purging and N₂ annealing exhibit a notable enhancement of 37.5% and 27% in I_SC (short-circuit current) and V_OC (open-circuit voltage) values, accompanied by a 5% improvement in optical transmittance compared to conventional CdS thin films. The films annealed at 300 °C demonstrate the highest I_SC, V_OC, and V_FB values, 55 μA, 0.475 V, and −675 mV, respectively. The improved optoelectrical properties in both N₂-purged and N₂-annealed films are attributed to their well-packed structure, enhanced interconnectivity, and a higher sulfur to cadmium ratio of 0.76 in the films. Full article

(This article belongs to the Topic Optoelectronic Materials, 2nd Volume)

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13 pages, 3590 KiB  

Open AccessArticle

Study of Multi-Channel Mode-Division Multiplexing Based on a Chalcogenide-Lithium Niobate Platform

by Jiacheng Zheng, Bowen Liu, Yuefei Weng and Baoan Song

Crystals 2024, 14(1), 73; https://doi.org/10.3390/cryst14010073 - 11 Jan 2024

Viewed by 1227

Abstract

A multi-channel mode-division multiplexing based on a chalcogenide-lithium niobate platform using chalcogenide films with adjustable refractive index is proposed, with the aim of overcoming issues with narrow bandwidth and large crosstalk in conventional multiplexers. An asymmetric directional coupler, employing chalcogenide-based thin-film modulation, was [...] Read more.

A multi-channel mode-division multiplexing based on a chalcogenide-lithium niobate platform using chalcogenide films with adjustable refractive index is proposed, with the aim of overcoming issues with narrow bandwidth and large crosstalk in conventional multiplexers. An asymmetric directional coupler, employing chalcogenide-based thin-film modulation, was designed to realize the multiplexing and separation of TE₁, TE₂, and TE₃ modes. Simulations show that the device is capable of obtaining an insertion loss of between 0.03 dB and 0.7 dB and a crosstalk of between −21.66 dB and −28.71 dB at 1550 nm. The crosstalk of the TE₁, TE₂, and TE₃ modes is below −20.1 dB when accessing the waveguide output port in the 1500–1600 nm band. The proposed multiplexer is a promising approach to enhance the transmission capability of thin-film lithium-niobate-integrated optical paths. Full article

(This article belongs to the Topic Optoelectronic Materials, 2nd Volume)

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12 pages, 3524 KiB  

Open AccessArticle

Structural, Optical, Electrical, and Thermoelectric Properties of Bi₂Se₃ Films Deposited at a High Se/Bi Flow Rate

by Ya-Hui Chuai, Yun-Fan Wang and Yu Bai

Nanomaterials 2023, 13(20), 2785; https://doi.org/10.3390/nano13202785 - 18 Oct 2023

Cited by 1 | Viewed by 1488

Abstract

Low-temperature synthesis of Bi₂Se₃ thin film semiconductor thermoelectric materials is prepared by the plasma-enhanced chemical vapor deposition method. The Bi₂Se₃ film demonstrated excellent crystallinity due to the Se-rich environment. Experimental results show that the prepared Bi₂ [...] Read more.

Low-temperature synthesis of Bi₂Se₃ thin film semiconductor thermoelectric materials is prepared by the plasma-enhanced chemical vapor deposition method. The Bi₂Se₃ film demonstrated excellent crystallinity due to the Se-rich environment. Experimental results show that the prepared Bi₂Se₃ film exhibited 90% higher transparency in the mid-IR region, demonstrating its potential as a functional material in the atmospheric window. Excellent mobility of 2094 cm²/V·s at room temperature is attributed to the n-type conductive properties of the film. Thermoelectrical properties indicate that with the increase in Se vapor, a slight decrease in conductivity of the film is observed at room temperature with an obvious increase in the Seebeck coefficient. In addition, Bi₂Se₃ thin film showed an enhanced power factor of as high as 3.41 μW/cmK². Therefore, plasma-enhanced chemical vapor deposition (PECVD)-grown Bi₂Se₃ films on Al₂O₃ (001) substrates demonstrated promising thermoelectric properties. Full article

(This article belongs to the Topic Optoelectronic Materials, 2nd Volume)

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