Electronic devices articles from across Nature Portfolio

A microlithography technique can be used to create pixelated silicone-integrated hole transport layers for high-density organic light-emitting diodes that can reduce electrical crosstalk and improve luminance and efficiency.

By constructing vertical tunnel junctions based on few-layer indium selenide, a chirality-sensitive detection method is developed, enabling the investigation of the interaction between chiral light and spin in the two-dimensional limit.

2D monocrystalline Gd₂O₅ is synthesized, which exhibits a wide bandgap with a high dielectric constant (κ), attributed to its strong ionic polarization capability. These properties enable MoS₂-based transistors to achieve an exceptionally low subthreshold swing and a high on/off current ratio, highlighting the potential of Gd₂O₅ for advanced transistor applications.

The authors report a wet-chemistry-based method to fabricate amorphous, transferable high-k copper calcium titanate thin films as dielectrics for two-dimensional electronic devices.

Sublattice amorphization is revealed as the deformation mechanism of Ag₂Te_1–xS_x (0.3 ≤ x ≤ 0.6), based on which an iterative crystalline–amorphous transition strategy is proposed to enable these bulk inorganic semiconductors with metal-like processability.

Pentagonal PdSe₂ induces anisotropic, gate-tunable spin–orbit coupling in graphene, enabling a tenfold modulation of in-plane spin lifetimes at room temperature and providing opportunities to control spin dynamics in van der Waals materials.

The Nernst effect of transverse thermoelectric flow is usually small in less ordered systems with low charge mobility. Here, the authors show that conjugated polymers defy this expectation with Nernst effects orders of magnitude larger than predicted.

The Experimental Pilot Line (2D-EPL) project has been launched in 2020 by the European Commission to promote the production of 2D (opto-)electronics and sensing devices. Here, the authors report the results and challenges of the first and third multi-project wafer runs completed at the end of 2022 and 2023 as part of the 2D-EPL.

The development of transistors based on two-dimensional semiconductors requires a consistent approach to calculating and evaluating quantum contact resistances.

An article in Nature Materials reports an adaptation of the Czochralski method that enables the growth of centimetre-scale single-crystal MoS₂ flakes with ultra-low defect density.

The FAMES pilot line on fully depleted silicon-on-insulator technology provides a complete toolbox of technologies for the development of innovative chip architectures with increased performance and lower power consumption of mixed-signal circuits.