ion etching
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Angle-resolved XPS combined with argon ion etching was used to characterize the surface functional groups and the chemical structure of Ti3C2Tx MXene. Survey scanning obtained on the sample surface showed that the sample mainly contains C, O, Ti and F elements, and a little Al element. Analyzing the angle-resolved narrow scanning of these elements indicated that a layer of C and O atoms was adsorbed on the top surface of the sample, and there were many O or F related Ti bonds except Ti–C bond. XPS results obtained after argon ion etching indicated staggered distribution between C–Ti–C bond and O–Ti–C, F–Ti bond. It is confirmed that Ti atoms and C atoms were at the center layer of Ti3C2Tx MXene, while O atoms and F atoms were located at both the upper and lower surface of Ti3C2 layer acting as surface functional groups. The surface functional groups on the Ti3C2 layer were determined to include O2−, OH−, F− and O−–F−, among which F atoms could also desorb from Ti3C2Tx MXene easily. The schematic atomic structure of Ti3C2Tx MXene was derived from the analysis of XPS results, being consistent with theoretical chemical structure and other experimental reports. The results showed that angle-resolved XPS combing with argon ion etching is a good way to analysis 2D thin layer materials.

The inductively coupled plasma reactive ion etching (ICP-RIE) is a selective dry etching method used in fabrication technology of various semiconductor devices. The etching is used to form non-planar microstructures—trenches or mesa structures, and tilted sidewalls with a controlled angle. The ICP-RIE method combining a high finishing accuracy and reproducibility is excellent for etching hard materials, such as SiC, GaN or diamond. The paper presents a review of silicon carbide etching—principles of the ICP-RIE method, the results of SiC etching and undesired phenomena of the ICP-RIE process are presented. The article includes SEM photos and experimental results obtained from different ICP-RIE processes. The influence of O2 addition to the SF6 plasma as well as the change of both RIE and ICP power on the etching rate of the Cr mask used in processes and on the selectivity of SiC/Cr etching are reported for the first time. SiC is an attractive semiconductor with many excellent properties, that can bring huge potential benefits thorough advances in submicron semiconductor processing technology. Recently, there has been an interest in SiC due to its potential wide application in power electronics, in particular in automotive, renewable energy and rail transport.

Abstract In this work, we carried out an investigation of commercial atomic force microscope (AFM) probes for contact and semi-contact modes, which were modified by focused ion beam (FIB). This method was used to modify the original tip shape of silicon AFM probes, by ion-etching and ion-enhance gas deposition. we show a better performance of the FIB-modified probes in contrast with the non-modified commercial probes. These results were obtained after using both probes in semi-contact mode in a calibration grating sample.

The primary objective of this study was to investigate and compare the surface topography of hard coatings deposited by three different physical vapor deposition methods (PVD): low-voltage electron beam evaporation, unbalanced magnetron sputtering and cathodic arc evaporation. In these deposition systems, various ion etching techniques were applied for substrate cleaning. The paper summarizes our experience and the expertise gained during many years of development of PVD hard coatings for the protection of tools and machine components. Surface topography was investigated using scanning electron microscopy (SEM), atomic force microscopy (AFM), scanning transmission electron microscopy (STEM) and 3D stylus profilometry. Observed similarities and differences among samples deposited by various deposition methods are discussed and correlated with substrate material selection, substrate pretreatment and deposition conditions. Large variations in the surface topography were observed between selected deposition techniques, both after ion etching and deposition processes. The main features and implications of surface cleaning by ion etching are discussed and the physical phenomena involved in this process are reviewed. During a given deposition run as well as from one run to another, a large spatial variation of etching rates was observed due to the difference in substrate geometry and batching configurations. Variations related to the specific substrate rotation (i.e., temporal variations in the etching and deposition) were also observed. The etching efficiency can be explained by the influence of different process parameters, such as substrate-to-source orientation and distance, shadowing and electric field effects. The surface roughness of PVD coatings mainly originates from growth defects (droplets, nodular defects, pinholes, craters, etc.). We briefly describe the causes of their formation.

The negatively charged germanium-vacancy GeV− color centers in diamond nanocrystals are solid-state photon emitters suited for quantum information technologies, bio-sensing, and labeling applications. Due to the small Huang–Rhys factor, the GeV−-center zero-phonon line emission is expected to be very intensive and spectrally narrow. However, structural defects and the inhomogeneous distribution of local strains in the nanodiamonds result in the essential broadening of the ZPL. Therefore, clarification and elimination of the reasons for the broadening of the GeV− center ZPL is an important problem. We report on the effect of reactive ion etching in oxygen plasma on the structure and luminescence properties of nanodiamonds grown by hot filament chemical vapor deposition. Emission of GeV− color centers ensembles at about 602 nm in as-grown and etched nanodiamonds is probed using micro-photoluminescence and micro-Raman spectroscopy at room and liquid nitrogen temperature. We show that the etching removes the nanodiamond surface sp2-induced defects resulting in a reduction in the broad luminescence background and a narrowing of the diamond Raman band. The zero-phonon luminescence band of the ensemble of the GeV− centers is a superposition of narrow lines originated most likely from the GeV− center sub-ensembles under different uniaxial local strain conditions.