topological surface
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AbstractWe study the surface crystalline and electronic structures of the antiferromagnetic topological insulator MnBi2Te4 using scanning tunneling microscopy/spectroscopy (STM/S), micro(μ)-laser angle-resolved photoemission spectroscopy (ARPES), and density functional theory calculations. Our STM images reveal native point defects at the surface that we identify as BiTe antisites and MnBi substitutions. Bulk X-ray diffraction further evidences the presence of the Mn-Bi intermixing. Overall, our characterizations suggest that the defects concentration is nonuniform within crystals and differs from sample to sample. Consistently, the ARPES and STS experiments reveal that the Dirac point gap of the topological surface state is different for different samples and sample cleavages, respectively. Our calculations show that the antiparallel alignment of the MnBi moments with respect to those of the Mn layer can indeed cause a strong reduction of the Dirac point gap size. The present study provides important insights into a highly debated issue of the MnBi2Te4 Dirac point gap.

Abstract Topological superconductivity is an exotic phenomenon due to the symmetry-protected topological surface state, in which a quantum system has an energy gap in the bulk but supports gapless excitations conned to its boundary. Symmetries including central and time-reversal, along with their relations with topology, are crucial for topological superconductivity. We report muon spin relaxation/rotation (μSR) experiments on a topological noncentrosymmetric superconductor PbTaSe2 to study its TRS and gap symmetry. Zero-field μSR experiments indicate the absence of internal magnetic eld in the superconducting state, consistent with previous μSR results. Furthermore, transverse-field μSR measurements reveals that the superconducting gap of PbTaSe2 is an isotropic three-dimensional fully-gapped single-band. The fully-gapped results can help understand the pairing mechanism and further classify the topological superconductivity in this system.

AbstractIn this paper, we study random representations of fundamental groups of surfaces into special unitary groups. The random model we use is based on a symplectic form on moduli space due to Atiyah, Bott and Goldman. Let $$\Sigma _{g}$$ Σ g denote a topological surface of genus $$g\ge 2$$ g ≥ 2 . We establish the existence of a large n asymptotic expansion, to any fixed order, for the expected value of the trace of any fixed element of $$\pi _{1}(\Sigma _{g})$$ π 1 ( Σ g ) under a random representation of $$\pi _{1}(\Sigma _{g})$$ π 1 ( Σ g ) into $$\mathsf {SU}(n)$$ SU ( n ) . Each such expected value involves a contribution from all irreducible representations of $$\mathsf {SU}(n)$$ SU ( n ) . The main technical contribution of the paper is effective analytic control of the entire contribution from irreducible representations outside finite sets of carefully chosen rational families of representations.

Abstract Introducing magnetism into topological insulators (TIs) can tune the topological surface states and produce exotic physical effects. Rare earth elements are considered as important dopant candidates, due to their large magnetic moments from heavily shielded 4f electrons. As the first element with just one 4f electron, cerium (Ce) offers an ideal platform for exploring the doping effect of f-electron in TIs. Here in this work, we have grown cerium-doped topological insulator Bi2Te3 thin films on an Al2O3(0001) substrate by molecular beam epitaxy (MBE). Electronic transport measurements revealed the Kondo effect, weak anti-localization (WAL) effect and suppression of surface conducting channels by Ce doping. Our research shows the fundamental doping effects of Ce in Bi2Te3 thin films, and demonstrates that such a system could be a good platform for further research.

AbstractThe difficulties in designing high-performance hydrogen evolution reaction (HER) catalysts lie in the manipulation of adsorption behaviors of transition metals (TMs). Topological chiral semimetals with super-long Fermi arc surface states provide an ideal platform for engineering the catalytic performance of TMs through the metal-support interaction. We found the adsorption trends of TMs can be modified significantly when deposited at the surface of the PdGa chiral crystal. The electron transfer from the TMs to the surface states of the PdGa reshapes the d band structure of TMs and weakens the hydrogen intermediate bonding. Especially, W/PdGa is expected to be a good HER catalyst with close to zero Gibbs free energy. Experimentally, we found a Pt-like exchange current density and turnover frequency when depositing W atoms at the PdGa nanostructures surface. The findings provide a way to develop high-efficient electrocatalysts by the interplay between topological surface states and metal-support interaction.

AbstractTopological surface states of three-dimensional topological insulator nanoribbons and their distinct magnetoconductance properties are promising for topoelectronic applications and topological quantum computation. A crucial building block for nanoribbon-based circuits are three-terminal junctions. While the transport of topological surface states on a planar boundary is not directly affected by an in-plane magnetic field, the orbital effect cannot be neglected when the surface states are confined to the boundary of a nanoribbon geometry. Here, we report on the magnetotransport properties of such three-terminal junctions. We observe a dependence of the current on the in-plane magnetic field, with a distinct steering pattern of the surface state current towards a preferred output terminal for different magnetic field orientations. We demonstrate that this steering effect originates from the orbital effect, trapping the phase-coherent surface states in the different legs of the junction on opposite sides of the nanoribbon and breaking the left-right symmetry of the transmission across the junction. The reported magnetotransport properties demonstrate that an in-plane magnetic field is not only relevant but also very useful for the characterization and manipulation of transport in three-dimensional topological insulator nanoribbon-based junctions and circuits, acting as a topoelectric current switch.

Three-dimensional (3D) topological insulator (TI) has emerged as a unique state of quantum matter and generated enormous interests in condensed matter physics. The surfaces of a 3D TI consist of a massless Dirac cone, which is characterized by the Z2 topological invariant. Introduction of magnetism on the surface of a TI is essential to realize the quantum anomalous Hall effect and other novel magneto-electric phenomena. Here, by using a combination of first-principles calculations, magneto-transport and angle-resolved photoemission spectroscopy (ARPES), we study the electronic properties of gadolinium (Gd)-doped Sb2Te3. Our study shows that Gd doped Sb2Te3 is a spin-orbit-induced bulk band-gap material, whose surface is characterized by a single topological surface state. Our results provide a new platform to investigate the interactions between dilute magnetism and topology in magnetic doped topological materials.

Abstract α-Sn is a topologically nontrivial semimetal in its natural structure. Upon compressively strained in plane, it transforms into a topological insulator. But, up to now, a clear and systematic understanding of the topological surface mode of topological insulating α-Sn is still lacking. In the present work, first-principle simulations are employed to investigate the electronic structure evolution of Ge1-xSnx alloys aiming at understanding the band reordering, topological phase transition and topological surface mode of α-Sn in detail. Progressing from Ge to Sn with increasing Sn content in Ge1-xSnx, the conduction band inverts with the first valence band and then with the second valence band sequentially, rather than inverting with the latter directly. Correspondingly, a topologically nontrivial surface mode arises in the first inverted band gap. Meanwhile, a fragile Dirac cone appears in the second inverted band gap as a result of the reorganization of the topological surface mode caused by the first valence band. The reorganization of the topological surface mode in α-Sn is very similar to the HgTe case. The findings of the present work are helpful for understanding and utilizing of the topological surface mode of α-Sn.