electronic band structures
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Novel ultra-hard hexacarbon C6 allotropes are proposed based on crystal chemistry rationale and geometry optimization onto ground state structures. Similar to diamond, the orthorhombic, tetragonal and trigonal C6 are cohesive networks of C4 tetrahedra illustrated by charge density projections exhibiting sp3-like carbon hybridization. All three allotropes are identified as mechanically (elastic constants) and dynamically (phonons) stable. The electronic band structures are characteristic of insulators with large band gaps of 4 to 5 eV, like diamond. From three different models evaluating Vickers hardness HV, all new carbon allotropes are identified as ultra-hard.

Abstract We calculate the electronic band structures and topological properties of twisted homobilayer transition metal dichalcogenides(t-TMDs), in particular, bilayer MoTe2 and WSe2 based on a low-energy effective continuum model. We systematically show how the twist angle, vertical electric field and pressure modify the band structures of t-TMDs, often accompanied by topological transitions.We find the variation of topological transitions mainly take place in a limited range of parameters. The electric field can efficiently tune the energy of the topmost second valence band to motify the Chern numbers of the topmost three valance bands. The topological property of the topmost first valance band can be modified by electric field and pressure, but doesn’t depend on twist angle. We show the band gap between the topmost second and third valance bands that both change from non-trivial to trivial closes at κ − -point of the moiré Brillouin zone.

Thermoelectric power generation is a promising candidate for automobile energy harvesting technologies because it is eco-friendly and durable owing to direct power conversion from automobile waste heat. Because Bi−Te systems are well-known thermoelectric materials, research on (Bi2)m(Bi2Te3)n homologous series can aid the development of efficient thermoelectric materials. However, to the best of our knowledge, (Bi2)m(Bi2Te3)n has been studied through experimental synthesis and measurements only. Therefore, we performed density functional theory calculations of nine members of (Bi2)m(Bi2Te3)n to investigate their structure, phase stability, and electronic band structures. From our calculations, although the total energies of all nine phases are slightly higher than their convex hulls, they can be metastable owing to their very small energy differences. The electric transport types of (Bi2)m(Bi2Te3)n do not change regardless of the exchange–correlation functionals, which cause tiny changes in the atomic structures, phase stabilities, and band structures. Additionally, only two phases (Bi8Te9, BiTe) became semimetallic or semiconducting depending on whether spin–orbit interactions were included in our calculations, and the electric transport types of the other phases were unchanged. As a result, it is expected that Bi2Te3, Bi8Te9, and BiTe are candidates for thermoelectric materials for automobile energy harvesting technologies because they are semiconducting.

Yb14MnSb11 and Yb14MgSb11 have rapidly risen to prominence as high-performing p-type thermoelectric materials for potential deep space power generation. However, the fairly complex crystal structure of 14-1-11 Zintl compounds renders the interpretation of the electronic band structure obscure, making it difficult to chemically guide band engineering and optimization efforts. In this work, we delineate the valence balanced Zintl chemistry of A14MX11 compounds (A = Yb, Ca; M = Mg, Mn, Al, Zn, Cd; X = Sb, Bi) using molecular orbital theory analysis. By analyzing the electronic band structures of Yb14MgSb11 and Yb14AlSb11 , we show that the conduction band minimum is composed of either an antibonding molecular orbital originating from the (Sb3)7− trimer, or a mix of atomic orbitals of A, M, and X. The singly degenerate valence band is comprised of non-bonding Sb p-z orbitals primarily from the Sb atoms in the (MSb4)m- tetrahedra and the of isolated Sb atoms distributed throughout the unit cell. Such a chemical understanding of the electronic structure enables strategies to engineer electronic properties (e.g., the band gap) of A14MX11 compounds.

The adsorption mechanism of CO gas molecule onto the surface of free-standing graphene and graphene on the α-SiO2 substrate is studied using the density functional theory. CO molecule is found to be physically adsorbed on the graphene surface. The adsorption properties of CO gas on free-standing graphene and graphene/α-SiO2, such as adsorption energy, adsorption distance, and response length, are calculated in detail. α-SiO2 has been found as a good substrate to enhance the adsorption energy of CO onto graphene. The electronic band structures and density of states (DOS) analysis results show that the interaction between α-SiO2 and graphene breaks the symmetry of graphene and a tunnelling bandgap occurs at the Dirac point. α-SiO2 substrate modifies the electronic band structures of free-standing graphene and opens a narrow bandgap of 51 meV. The calculated charge transfer data suggest that the presence of α-SiO2 enhances the charge donation of CO molecule to the graphene surface.

In this study, we undertake a Bayesian optimization of the Hubbard U parameters of wurtzite GaN and InN. The optimized Us are then tested within the Hubbard-corrected local density approximation (LDA+U) approach against standard density functional theory, as well as a hybrid functional (HSE06). We present the electronic band structures of wurtzite GaN, InN, and (1:1) InGaN superlattice. In addition, we demonstrate the outstanding performance of the new parametrization, when computing the internal electric-fields in a series of [InN]1–[GaN]n superlattices (n = 2–5) stacked up along the c-axis.

Pure transition metal vanadates NiV2O6 and CuV2O6 were successfully prepared via co-precipitation technique as low as at 600 °C. The crystal structure and their phase formation were confirmed by X-ray powdered diffraction. Both the compounds were identified to have a single-phase triclinic structure. The bonding characteristics were studied by FTIR spectroscopy. The temperature dependence of electrical resistivity of these vanadates shows a typical semiconducting nature of NiV2O6 and CuV2O6, consistent with their electronic band structures. The calculated band gap energy values of NiV2O6 and CuV2O6 were found to be 2.42 and 2.0 eV respectively, employing a DRS UV-Visible spectrophotometer. Magnetic susceptibility measurements and calculated Magnetic moments confirm their paramagnetic nature. The photocatalytic efficiency was investigated by photo-degradation of methylene blue (MB) solutions employing solar light and found to be promising photocatalysts.