K3020P(G) Series

Vishay Semiconductors

Optocoupler with Phototriac Output

Description
The K3020P(G) series consists of a phototransistor optically coupled to a gallium arsenide infraredemitting diode in a 6-lead plastic dual inline package. The elements are mounted on one leadframe using a coplanar technique, providing a fixed distance between input and output for highest safety requirements.

Applications
Circuits for safe protective separation against electrical shock according to safety class II (reinforced isolation):
14827

D For appl. class I IV at mains voltage 300 V D For appl. class I III at mains voltage 600 V
according to VDE 0884, table 2, suitable for: Monitors, air conditioners, line switches, solid state relays, microwaves. ~
6 5

~
4

VDE Standards
These couplers perform safety functions according to the following equipment standards:
1 2 3
95 10812

D VDE 0884
Optocoupler for electrical safety requirements

A (+) C () nc Note: Pin 5 must not be connected

D IEC 950/EN 60950 D VDE 0804

Office machines (applied for reinforced isolation for mains voltage 400 VRMS)

Telecommunication apparatus and data processing

D IEC 65 Safety for mains-operated electronic and

related household apparatus

Order Instruction
Ordering Code CTR Ranking 1) K3020P, K3020PG < 30 mA K3021P, K3021PG1) < 15 mA K3022P, K3022PG1) < 10 mA 1) K3023P, K3023PG < 5 mA K3036P, K3036PG1) < 3.6 mA 1) G = Leadform 10.16 mm; G is not marked on the body Remarks

Document Number 83505 Rev. A6, 11Aug00

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K3020P(G) Series
Vishay Semiconductors Features
Approvals:

D Rated recurring peak voltage (repetitive)

VIORM = 600 VRMS D Creepage current resistance according to VDE 0303/IEC 112 Comparative Tracking Index: CTI = 275 D Thickness through insulation 0.75 mm General features:

D BSI: BS EN 41003, BS EN 60095 (BS 415),

BS EN 60950 (BS 7002), Certificate number 7081 and 7402

D FIMKO (SETI): EN 60950,

Certificate number 12398

D Underwriters Laboratory (UL) 1577 recognized,

file number E-76222

D VDE 0884, Certificate number 94778

VDE 0884 related features:

D Rated impulse voltage (transient overvoltage)

VIOTM = 6 kV peak D Isolation test voltage (partial discharge test voltage) Vpd = 1.6 kV D Rated isolation voltage (RMS includes DC) VIOWM = 600 VRMS (848 V peak)

D Isolation materials according to UL 94-VO D Pollution degree 2 (DIN/VDE 0110 resp. IEC 664) D Climatic classification 55/100/21 (IEC 68 part 1) D Special construction:
Therefore, extra low coupling capacity of typical 0.2 pF, high Common Mode Rejection D IFT offered into 4 groups D Coupling System C

Absolute Maximum Ratings

Input (Emitter)
Parameter Reverse voltage Forward current Forward surge current Power dissipation Junction temperature Test Conditions Symbol VR IF IFSM PV Tj Value 5 80 3 100 100 Unit V mA A mW C

tp 10 ms Tamb 25C

Output (Detector)
Parameter Test Conditions Off state output terminal voltage On state RMS current Peak surge current, non-repetitive tp 10 ms Power dissipation Tamb 25C Junction temperature Symbol VDRM ITRMS ITMS PV Tj Value 400 100 1.5 300 100 Unit V mA A mW C

Coupler
Parameter Test Conditions Isolation test voltage (RMS) Total power dissipation Tamb 25C Ambient temperature range Storage temperature range Soldering temperature 2 mm from case, t 10 s 1) Related to standard climate 23/50 DIN 50014 Symbol VIO 1) Ptot Tamb Tstg Tsd Value 3.75 350 40 to +85 55 to +100 260 Unit kV mW C C C

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Document Number 83505 Rev. A6, 11Aug00

K3020P(G) Series
Vishay Semiconductors Electrical Characteristics (Tamb = 25C)
Input (Emitter)
Parameter Forward voltage Junction capacitance Test Conditions IF = 50 mA VR = 0, f = 1 MHz Symbol VF Cj Min. Typ. 1.25 50 Max. 1.6 Unit V pF

Output (Detector)
Parameter Forward peak off-state voltage (repetitive) Peak on-state voltage Critical rate of rise of off-state voltage
1)

Test Conditions IDRM = 100 nA ITM = 100 mA IFT = 0, IFT = 30 mA

Symbol VDRM 1) VTM (dv/dt)cr (dv/dt)crq

Min. 400

Typ.

Max.

Unit V V V/ms V/ms

0.1

1.5 10 0.2

Test voltage must be applied within dv/dt ratings

Coupler
Parameter Emitting diode trigger g gg current Test Conditions VS = 3 V, RL = 150

Holding current IF = 10 mA, VS 3V Note: IFT is defined as a minimum trigger current

Type K3020P(G) K3021P(G) K3022P(G) K3023P(G) K3036P(G)

Symbol IFT IFT IFT IFT IFT IH

Min.

Typ. 15 8 5 2 2 100

Max. 30 15 10 5 3.6

Unit mA mA mA mA mA A

RS

IFT RL
95 10813

V~

Test condition: dv/dtcr VS = 2/3 VDRM (Sine wave) RL = 33 k dv/dtcrq Veff = 30 V (Sine wave) RL = 2 k

Figure 1. Test circuit for dv/dtcr and dv/dtcrp

Document Number 83505 Rev. A6, 11Aug00

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K3020P(G) Series
Vishay Semiconductors
IF

yI

FT

95 10814

IF = 0 dv / dtcrq
dv/dtcr

dv / dtcr

Highest value of the rate of rise of off-state voltage which does not cause any switching from the off-state to the on-state dv/dtcrq Highest value of the rate of rise of communicating voltage which does not switch on the device again, after the voltage has decreased to zero and the trigger current is switched from IFT to zero Figure 2.

+5 V

270 M

0.1 F TTL

VAC ~

Galvanical separation
Figure 3. Motor control circuit

95 10815

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Document Number 83505 Rev. A6, 11Aug00

K3020P(G) Series
Vishay Semiconductors Maximum Safety Ratings (according to VDE 0884) see figure 4
This device is used for protective separation against electrical shock only within the maximum safety ratings. This must be ensured by using protective circuits in the applications.

Input (Emitter)
Parameters Forward current Test Conditions Symbol Isi Value 130 Unit mA

Output (Detector)
Parameters Power dissipation Test Conditions Tamb 25C Symbol Psi Value 600 Unit mW

Coupler
Parameters Rated impulse voltage Safety temperature Test Conditions Symbol VIOTM Tsi Value 6 150 Unit kV C

Insulation Rated Parameters (according to VDE 0884)

Parameter Partial discharge test voltage Routine test Partial discharge test voltage g g Lot test (sample test) Insulation resistance Insulation resistance Insulation resistance Test Conditions 100%, ttest = 1 s tTr = 60 s, ttest = 10 s, (see figure 5) VIO = 500 V VIO = 500 V, Tamb = 100C VIO = 500 V, Tamb = 150C
(construction test only) 675 600 525 450 375 300 225 150 75 0 0
95 10925

Symbol Vpd VIOTM Vpd RIO RIO RIO

Min. 1.6 6 1.3 1012 1011 109

Typ.

Max.

Unit kV kV kV

W W W

VIOTM t1, t2 = 1 to 10 s t3, t4 = 1 s ttest = 10 s tstres = 12 s VPd VIOWM VIORM Isi (mA)

Psi (mW)

0 25 50 75 100 125 150

13930

t3 ttest t4

Tamb ( C )

t1

tTr = 60 s

t2

tstres

Figure 4. Derating diagram

Figure 5. Test pulse diagram for sample test according to DIN VDE 0884

Document Number 83505 Rev. A6, 11Aug00

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K3020P(G) Series
Vishay Semiconductors Typical Characteristics (Tamb = 25_C, unless otherwise specified)
400 P tot Total Power Dissipation ( mW ) Coupled device 300
Phototransistor

1.5 VTMrel Relative OnState Voltage 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 30 20 10 0 10 20 30 40 50 60 70 80
96 11923

IF IFT IT=100mA

200 IR-diode 100

0 0
96 11701

20

40

60

80

100

Tamb Ambient Temperature ( C )

Tamb Ambient Temperature ( C )

Figure 6. Total Power Dissipation vs. Ambient Temperature

1000.0

Figure 9. Relative On - State vs. Ambient Temperature

100 I DRM OffState Current ( nA )

I F Forward Current ( mA )

100.0

VDR=100V IF=0 10

10.0

1.0

0.1 0
96 11862

1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 VF Forward Voltage ( V )
96 11924

20

30

40

50

60

70

80

90

100

Tamb Ambient Temperature ( C )

Figure 7. Forward Current vs. Forward Voltage

I FTrel Relative Threshold Forward Current 1.5 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 30 20 10 0 10 20 30 40 50 60 70 80 Tamb Ambient Temperature ( C )

Figure 10. Off - State Current vs. Ambient Temperature

250 200

ITM OnState Current ( mA )

VS=3V RL=150

150 100 50 0 50 100 150 200

IFT=30mA

250 2.5 2.0 1.5 1.0 0.5 0.0 0.5 1.0 1.5 2.0 2.5
96 11926

96 11922

VTM OnState Voltage ( V )

Figure 8. Relative Threshold Forward Current vs. Ambient Temperature

Figure 11. On - State Current vs. Ambient Temperature

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Document Number 83505 Rev. A6, 11Aug00

K3020P(G) Series
Vishay Semiconductors
Type 250 200 ITM OnState Current ( mA ) 150 100 50 0 50 100 150 200 250 2.5 2.0 1.5 1.0 0.5 0.0 0.5 1.0 1.5 2.0 2.5
96 11925 15090

IFT=15mA Date Code (YM)

XXXXXX 918 A TK 63 0884 V D E

Coupling System Indicator Company Logo

Production Location Safety Logo

VTM OnState Voltage ( V )

Figure 12. On - State Current vs. Ambient Temperature

Figure 13. Marking example

Dimensions of K302.PG in mm

14771

Document Number 83505 Rev. A6, 11Aug00

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K3020P(G) Series
Vishay Semiconductors Dimensions of K302.P in mm

14770

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Document Number 83505 Rev. A6, 11Aug00

K3020P(G) Series
Vishay Semiconductors Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs ). The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA ) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.

We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423

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