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by MJE13005/D

SEMICONDUCTOR TECHNICAL DATA



  

*Motorola Preferred Device

 




  !  
These devices are designed for highvoltage, highspeed power switching
inductive circuits where fall time is critical. They are particularly suited for 115 and
220 V SWITCHMODE applications such as Switching Regulators, Inverters, Motor
Controls, Solenoid/Relay drivers and Deflection circuits.
SPECIFICATION FEATURES:

4 AMPERE
NPN SILICON
POWER TRANSISTOR
400 VOLTS
75 WATTS

VCEO(sus) 400 V
Reverse Bias SOA with Inductive Loads @ TC = 100_C
Inductive Switching Matrix 2 to 4 Amp, 25 and 100_C
. . . tc @ 3A, 100_C is 180 ns (Typ)
700 V Blocking Capability
SOA and Switching Applications Information.

v
CASE 221A06
TO220AB

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

CollectorEmitter Voltage

VCEO(sus)

400

Vdc

CollectorEmitter Voltage

VCEV

700

Vdc

Emitter Base Voltage

VEBO

Vdc

Collector Current Continuous

Peak (1)

IC
ICM

4
8

Adc

Base Current Continuous

Peak (1)

IB
IBM

2
4

Adc

Emitter Current Continuous

Peak (1)

IE
IEM

6
12

Adc

Total Power Dissipation @ TA = 25_C

Derate above 25_C

PD

2
16

Watts
mW/_C

Total Power Dissipation @ TC = 25_C

Derate above 25_C

PD

75
600

Watts
mW/_C

TJ, Tstg

65 to + 150

_C

Symbol

Max

Unit

Thermal Resistance, Junction to Ambient

RJA

62.5

_C/W

Thermal Resistance, Junction to Case

RJC

1.67

_C/W

TL

275

_C

Operating and Storage Junction Temperature Range

THERMAL CHARACTERISTICS

Characteristic

Maximum Lead Temperature for Soldering

Purposes: 1/8 from Case for 5 Seconds

(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle

10%.

Designers Data for Worst Case Conditions The Designers Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves representing boundaries on device characteristics are given to facilitate worst case design.
Preferred devices are Motorola recommended choices for future use and best overall value.
Designers and SWITCHMODE are trademarks of Motorola, Inc.

REV 3

Motorola, Inc. 1995

Motorola Bipolar Power Transistor Device Data


MJE13005

ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

VCEO(sus)

400

Vdc

1
5

*OFF CHARACTERISTICS

CollectorEmitter Sustaining Voltage

(IC = 10 mA, IB = 0)

Collector Cutoff Current

(VCEV = Rated Value, VBE(off) = 1.5 Vdc)
(VCEV = Rated Value, VBE(off) = 1.5 Vdc, TC = 100_C)

ICEV

Emitter Cutoff Current

(VEB = 9 Vdc, IC = 0)

IEBO

mAdc

mAdc

SECOND BREAKDOWN

Second Breakdown Collector Current with base forward biased

Clamped Inductive SOA with Base Reverse Biased

IS/b

See Figure 11

RBSOA

See Figure 12

*ON CHARACTERISTICS

DC Current Gain
(IC = 1 Adc, VCE = 5 Vdc)
(IC = 2 Adc, VCE = 5 Vdc)

hFE

10
8

60
40

0.5
0.6
1
1

1.2
1.6
1.5

fT

MHz

Cob

65

pF

td

0.025

0.1

tr

0.3

0.7

ts

1.7

tf

0.4

0.9

tsv

0.9

tc

0.32

0.9

tfi

0.16

CollectorEmitter Saturation Voltage

(IC = 1 Adc, IB = 0.2 Adc)
(IC = 2 Adc, IB = 0.5 Adc)
(IC = 4 Adc, IB = 1 Adc)
(IC = 2 Adc, IB = 0.5 Adc, TC = 100_C)

VCE(sat)

BaseEmitter Saturation Voltage

(IC = 1 Adc, IB = 0.2 Adc)
(IC = 2 Adc, IB = 0.5 Adc)
(IC = 2 Adc, IB = 0.5 Adc, TC = 100_C)

VBE(sat)

Vdc

Vdc

DYNAMIC CHARACTERISTICS

CurrentGain Bandwidth Product

(IC = 500 mAdc, VCE = 10 Vdc, f = 1 MHz)
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 0.1 MHz)

SWITCHING CHARACTERISTICS
Resistive Load (Table 2)
Delay Time
Rise Time

Storage Time

(VCC = 125 Vdc, IC = 2 A,

IB1 = IB2 = 0.4 A, tp = 25 s,
Duty Cycle
1%)

Fall Time

Inductive Load, Clamped (Table 2, Figure 13)

Voltage Storage Time
Crossover Time

(IC = 2 A, Vclamp = 300 Vdc,

IB1 = 0.4 A, VBE(off) = 5 Vdc, TC = 100_C)

Fall Time

*Pulse Test: Pulse Width = 300 s, Duty Cycle = 2%.

Motorola Bipolar Power Transistor Device Data

VCE , COLLECTOREMITTER VOLTAGE (VOLTS)

MJE13005
100

hFE , DC CURRENT GAIN

70

TJ = 150C

50
25C
30
20

55C

10

VCE = 2 V
VCE = 5 V

7
5
0.04 0.06

0.1

0.4 0.6
0.2
1
IC, COLLECTOR CURRENT (AMP)

2
TJ = 25C
1.6
IC = 1 A

VCE(sat) , COLLECTOREMITTER SATURATION

VOLTAGE (VOLTS)

VBE, BASEEMITTER VOLTAGE (VOLTS)

0.9

TJ = 55C
25C

0.7
25C
0.5
150C
0.3
0.04 0.06

0.1

0.2

0.4

0.6

0.4

0
0.03

0.05

0.1

IC/IB = 4
0.45
TJ = 55C

0.35
25C
0.25

0.15

150C

0.05
0.04 0.06

0.1

0.2

0.4

0.6

Figure 4. CollectorEmitter Saturation Voltage

2k

C, CAPACITANCE (pF)

IC, COLLECTOR CURRENT ( A)

Figure 3. BaseEmitter Voltage

TJ = 150C
125C
100C
75C
50C
25C
0.1
0.4

IC, COLLECTOR CURRENT (AMP)

1k

0.55

VCE = 250 V

10

0.2 0.3
0.5 0.7
IB, BASE CURRENT (AMP)

IC, COLLECTOR CURRENT (AMP)

10 k

100

4A

Figure 2. Collector Saturation Region

1.3

1.1

3A

0.8

Figure 1. DC Current Gain

VBE(sat) @ IC/IB = 4
VBE(on) @ VCE = 2 V

2A

1.2

REVERSE

Cib

1k
700
500
300
200
100
70
50
30

FORWARD

+ 0.2
+ 0.4
0
0.2
VBE, BASEEMITTER VOLTAGE (VOLTS)

Figure 5. Collector Cutoff Region

Motorola Bipolar Power Transistor Device Data

+ 0.6

20
0.3

Cob
0.5

10
30
1 3 5
50
VR, REVERSE VOLTAGE (VOLTS)

100

300

Figure 6. Capacitance

MJE13005
ICPK
90% Vclamp
IC

tsv

SWITCHING TIMES NOTE

Vclamp
90% IC

trv

tfi

tti

tc
VCE
IB

10% Vclamp
90% IB1

10%
ICPK

2% IC

TIME

Figure 7. Inductive Switching Measurements

Table 1. Typical Inductive Switching Performance

IC
AMP

TC
_C

tsv
ns

trv
ns

tfi
ns

tti
ns

tc
ns

25
100

600
900

70
110

100
240

80
130

180
320

25
100

650
950

60
100

140
330

60
100

200
350

25
100

550
850

70
110

160
350

100
160

220
390

NOTE: All Data recorded in the inductive Switching Circuit In Table 2.

In resistive switching circuits, rise, fall, and storage times

have been defined and apply to both current and voltage
waveforms since they are in phase. However, for inductive
loads which are common to SWITCHMODE power supplies
and hammer drivers, current and voltage waveforms are not
in phase. Therefore, separate measurements must be made
on each waveform to determine the total switching time. For
this reason, the following new terms have been defined.
tsv = Voltage Storage Time, 90% IB1 to 10% Vclamp
trv = Voltage Rise Time, 10 90% Vclamp
tfi = Current Fall Time, 90 10% IC
tti = Current Tail, 10 2% IC
tc = Crossover Time, 10% Vclamp to 10% IC
An enlarged portion of the inductive switching waveforms is
shown in Figure 7 to aid in the visual identity of these terms.
For the designer, there is minimal switching loss during
storage time and the predominant switching power losses
occur during the crossover interval and can be obtained using the standard equation from AN222:
PSWT = 1/2 VCCIC(tc)f

In general, trv + t fi
t c. However, at lower test currents this
relationship may not be valid.
As is common with most switching transistors, resistive
switching is specified at 25C and has become a benchmark
for designers. However, for designers of high frequency converter circuits, the user oriented specifications which make
this a SWITCHMODE transistor are the inductive switching
speeds (tc and tsv) which are guaranteed at 100_C.

RESISTIVE SWITCHING PERFORMANCE

1

10
VCC = 125 V
IC/IB = 5
TJ = 25C

0.5
tr

t, TIME ( s)

t, TIME ( s)

0.2
0.1
0.05

2
1
0.5

td @ VBE(off) = 5 V

0.3
0.02
0.01
0.04

VCC = 125 V
IC/IB = 5
TJ = 25C

ts

tf

0.2

0.1

0.2

0.4

0.1
0.04

0.1

0.2

0.5

IC, COLLECTOR CURRENT (AMP)

IC, COLLECTOR CURRENT (AMP)

Figure 8. TurnOn Time

Figure 9. TurnOff Time

Motorola Bipolar Power Transistor Device Data

MJE13005
Table 2. Test Conditions for Dynamic Performance
RESISTIVE
SWITCHING

REVERSE BIAS SAFE OPERATING AREA AND INDUCTIVE SWITCHING

+5 V
1N4933

VCC

33

+125 V

MJE210
TEST CIRCUITS

0.001 F

RC

5V
2N2222

PW
DUTY CYCLE 10%
tr, tf 10 ns

MR826*

33 1N4933
Vclamp

IC

RB

1k
68
1k
+5 V

5.1 k

IB

TUT

*SELECTED FOR 1 kV
D1

VCE
51

1k

1N4933

T.U.T.
4.0 V

2N2905
0.02 F 270

MJE200
47 100
1/2 W

CIRCUIT
VALUES

NOTE
PW and VCC Adjusted for Desired IC
RB Adjusted for Desired IB1

Coil Data:
Ferroxcube Core #6656
Full Bobbin (~16 Turns) #16

VBE(off)

GAP for 200 H/20 A

Lcoil = 200 H

VCC = 125 V
RC = 62
D1 = 1N5820 or Equiv.
RB = 22

VCC = 20 V
Vclamp = 300 Vdc

TEST WAVEFORMS

OUTPUT WAVEFORMS
tf CLAMPED
tf UNCLAMPED t2

IC

t1
VCE

1
0.7
0.5

tf

VCE or
Vclamp

t2
t

8 V

Lcoil (ICpk)
Vclamp

tr, tf < 10 ns
Duty Cycle = 1.0%
RB and RC adjusted
for desired IB and IC

t2

D = 0.5

0.3

0.2

0.2

0.1

0.1

0.02
0.03
0.01

0.02
SINGLE PULSE
0.02

0.05

0.1

P(pk)

ZJC(t) = r(t) RJC

RJC = 1.67C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) TC = P(pk) ZJC(t)

0.05

0.07
0.05

0.01
0.01

Test Equipment
ScopeTektronics
475 or Equivalent

Lcoil (ICpk)
t1
VCC

25 s

+10 V

t1 ADJUSTED TO
OBTAIN IC

IC(pk)

TIME

r(t), TRANSIENT THERMAL RESISTANCE

(NORMALIZED)

SCOPE

RB

0.2

0.5

2
5
t, TIME (ms)

10

20

t1

t2

DUTY CYCLE, D = t1/t2

50

100

200

500

1k

Figure 10. Typical Thermal Response [ZJC(t)]

Motorola Bipolar Power Transistor Device Data

MJE13005
The Safe Operating Area Figures 11 and 12 are specified ratings
for these devices under the test conditions shown.

SAFE OPERATING AREA INFORMATION

FORWARD BIAS

IC, COLLECTOR CURRENT (AMP)

10

There are two limitations on the power handling ability of a

transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC VCE limits of
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipation than the curves indicate.
The data of Figure 11 is based on TC = 25_C; T J(pk) is
variable depending on power level. Second breakdown pulse
limits are valid for duty cycles to 10% but must be derated
when TC 25_C. Second breakdown limitations do not derate the same as thermal limitations. Allowable current at the
voltages shown on Figure 11 may be found at any case temperature by using the appropriate curve on Figure 13.
T J(pk) may be calculated from the data in Figure 10. At
high case temperatures, thermal limitations will reduce the
power that can be handled to values less than the limitations
imposed by second breakdown.

5
2

500 s

5 ms
dc

1
0.5

1 ms

0.2
0.1
0.05
0.02

MJE13005

0.01
5

10

20

30

50

200 300

70 100

VCE, COLLECTOREMITTER VOLTAGE (VOLTS)

500
400

Figure 11. Forward Bias Safe Operating Area

REVERSE BIAS

IC(pk) , COLLECTOR CURRENT (AMP)

For inductive loads, high voltage and high current must be

sustained simultaneously during turnoff, in most cases, with
the base to emitter junction reverse biased. Under these
conditions the collector voltage must be held to a safe level
at or below a specific value of collector current. This can be
accomplished by several means such as active clamping,
RC snubbing, load line shaping, etc. The safe level for these
devices is specified as Reverse Bias Safe Operating Area
and represents the voltagecurrent conditions during reverse biased turnoff. This rating is verified under clamped
conditions so that the device is never subjected to an avalanche mode. Figure 12 gives the complete RBSOA characteristics.

TC 100C
IB1 = 2.0 A
3

VBE(off) = 9 V

1
MJE13005
0
0

100

200

300

400

500

600

5V
3V
1.5 V
700
800

VCE, COLLECTOREMITTER CLAMP VOLTAGE (VOLTS)

Figure 12. Reverse Bias Switching

Safe Operating Area

POWER DERATING FACTOR

1
SECOND BREAKDOWN
DERATING

0.8

0.6

THERMAL
DERATING

0.4

0.2
0

20

40

60

80

100

120

140

160

TC, CASE TEMPERATURE (C)

Figure 13. Forward Bias Power Derating

Motorola Bipolar Power Transistor Device Data

MJE13005
PACKAGE DIMENSIONS

T
B

SEATING
PLANE

F
T

DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z

Q
1 2 3

H
K
Z
L

NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.

G
D
N

INCHES
MIN
MAX
0.570
0.620
0.380
0.405
0.160
0.190
0.025
0.035
0.142
0.147
0.095
0.105
0.110
0.155
0.018
0.025
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045

0.080

STYLE 1:
PIN 1.
2.
3.
4.

MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.28
4.07
4.82
0.64
0.88
3.61
3.73
2.42
2.66
2.80
3.93
0.46
0.64
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15

2.04

BASE
COLLECTOR
EMITTER
COLLECTOR

CASE 221A06
TO220AB
ISSUE Y

Motorola Bipolar Power Transistor Device Data

MJE13005

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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
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Motorola Bipolar Power Transistor Device Data

*MJE13005/D*
MJE13005/D