Semiconductor Technical Data: 50 Ampere NPN Silicon Power Darlington Transistors 400 AND 500 VOLTS 250 WATTS

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by MJ10015/D
SEMICONDUCTOR TECHNICAL DATA

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$!%%&"$% (& % &&$ 50 AMPERE
NPN SILICON
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" POWER DARLINGTON
TRANSISTORS
The MJ10015 and MJ10016 Darlington transistors are designed for high–voltage, 400 AND 500 VOLTS
high–speed, power switching in inductive circuits where fall time is critical. They are 250 WATTS
particularly suited for line–operated switchmode applications such as:
• Switching Regulators
• Motor Controls
• Inverters
• Solenoid and Relay Drivers
• Fast Turn–Off Times
1.0 µs (max) Inductive Crossover Time — 20 Amps
2.5 µs (max) inductive Storage Time — 20 Amps CASE 197–05
• Operating Temperature Range –65 to + 200_C TO–204AE TYPE
• Performance Specified for ≈ 50 ≈8 (TO–3 TYPE)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Reversed Biased SOA with Inductive Load
Switching Times with Inductive Loads
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Saturation Voltages
Leakage Currents
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
MAXIMUM RATINGS
Rating Symbol MJ10015 MJ10016 Unit
Collector–Emitter Voltage VCEO 400 500 Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector–Emitter Voltage VCEV 600 700 Vdc
Emitter Base Voltage VEB 8.0 Vdc
Collector Current — Continuous IC 50 Adc
— Peak (1) ICM 75
Base Current — Continous IB 10 Adc
— Peak (1) IBM 15
Total Power Dissipation @ TC = 25_C PD 250 Watts
@ TC = 100_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
143
Derate above 25_C 1.43 W/_C
Operating and Storage Junction Temperature Range TJ, Tstg – 65 to + 200 _C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
_C/W
Thermal Resistance, Junction to Case RθJC 0.7
_C
Maximum Lead Temperature for Soldering Purposes: TL 275
1/8″ from Case for 5 Seconds
v
(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle 10%.
SWITCHMODE is a trademark of Motorola, Inc.
REV 1
 Motorola, Inc. 1995 1

Motorola Bipolar Power Transistor Device Data
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
OFF CHARACTERISTICS (1)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector–Emitter Sustaining Voltage (Table 1) VCEO(sus) Vdc
(IC = 100 mA, IB = 0, Vclamp = Rated VCEO) MJ10015 400 — —
MJ10016 500 — —
Collector Cutoff Current ICEV — — 0.25 mAdc
(VCEV = Rated Value, VBE(off) = 1.5 Vdc)
Emitter Cutoff Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ IEBO — — 350 mAdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
(VEB = 2.0 Vdc, IC = 0)
SECOND BREAKDOWN
Second Breakdown Collector Current with Base Forward Biased IS/b See Figure 7
Clamped Inductive SOA with Base Reverse Biased RBSOA See Figure 8
ON CHARACTERISTICS (1)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
DC Current Gain hFE —
(IC = 20 Adc, VCE = 5.0 Vdc) 25 — —
(IC = 40 Adc, VCE = 5.0 Vdc) 10 — —
Collector–Emitter Saturation Voltage VCE(sat) Vdc
(IC = 20 Adc, IB = 1.0 Adc) — — 2.2
(IC = 50 Adc, IB = 10 Adc) — — 5.0
Base–Emitter Saturation Voltage VBE(sat) — — 2.75 Vdc
(IC = 20 Adc, IB = 1.0 Adc)
Diode Forward Voltage (2) Vf — 2.5 5.0 Vdc
(IF = 20 Adc)
DYNAMIC CHARACTERISTIC
Output Capacitance Cob — — 750 pF
ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
(VCB = 10 Vdc, IE = 0, ftest = 100 kHz)
SWITCHING CHARACTERISTICS
Resistive Load (Table 1)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Delay Time td — 0.14 0.3 µs
Rise Time (VCC = 250 Vdc, IC = 20 A, tr — 0.3 1.0 µs
IB1 = 1.0 Adc, VBE(off) = 5 Vdc, tp = 25 µs
v
Storage Time Duty Cycle 2%). ts — 0.8 2.5 µs
Fall Time tf — 0.3 1.0 µs
Inductive Load, Clamped (Table 1)
Storage Time (IC = 20 A(pk), Vclamp = 250 V, IB1 = 1.0 A, tsv — 1.0 2.5 µs
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Crossover Time VBE(off) = 5.0 Vdc) tc — 0.36 1.0 µs
v
(1) Pulse Test: Pulse Width = 300 µs, Duty Cycle 2%.
(2) The internal Collector–to–Emitter diode can eliminate the need for an external diode to clamp inductive loads.
(2) Tests have shown that the Forward Recovery Voltage (Vf) of this diode is comparable to that of typical fast recovery rectifiers.
2 Motorola Bipolar Power Transistor Device Data

TYPICAL CHARACTERISTICS
100 2.4
2.0
50
hFE, DC CURRENT GAIN
IC/IB = 10
V, VOLTAGE (VOLTS)
1.6
TC = 25°C
20 VCE = 5.0 V
1.2
TJ = 25°C
10
0.8
TJ = 150°C
5.0 0.4
0.5 1.0 2.0 5.0 10 20 50 0.5 1.0 2.0 5.0 10 20 50
IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMP)
Figure 1. DC Current Gain Figure 2. Collector–Emitter Saturation Voltage
2.8 104
VCE = 250 V
103
IC, COLLECTOR CURRENT ( µA)
2.4
V, VOLTAGE (VOLTS)
IC/IB = 10 TJ = 125°C
2.0 102
100°C
75°C
1.6 TJ = 25°C 101
REVERSE
1.2 TJ = 150°C 100 FORWARD
25°C
0.8 10–1
0.5 1.0 2.0 5.0 10 20 50 – 0.2 0 + 0.2 + 0.4 + 0.6 + 0.8
IC, COLLECTOR CURRENT (AMP) VBE, BASE–EMITTER VOLTAGE (VOLTS)
Figure 3. Base–Emitter Saturation Voltage Figure 4. Collector Cutoff Region
1500
C ob , OUTPUT CAPACITANCE (pF)
1000
TJ = 25°C
500
300
200
100
0.4 1.0 4.0 10 40 100 400
VR, REVERSE VOLTAGE (VOLTS)
Figure 5. Output Capacitance
Motorola Bipolar Power Transistor Device Data 3

Table 1. Test Conditions for Dynamic Performance
VCEO(sus) VCEX AND INDUCTIVE SWITCHING RESISTIVE SWITCHING
INDUCTIVE TEST CIRCUIT TURN–ON TIME

20 Ω
1 1
CONDITIONS
5V 2
TUT
0 1 Rcoil IB1
INPUT
1N4937
OR
INPUT Lcoil
2 EQUIVALENT
SEE ABOVE FOR IB1 adjusted to
DETAILED CONDITIONS Vclamp VCC obtain the forced
hFE desired
PW Varied to Attain RS =
2 TURN–OFF TIME
IC = 100 mA 0.1 Ω
Use inductive switching
driver as the input to
the resistive test circuit.
CIRCUIT
VALUES
Lcoil = 10 mH, VCC = 10 V Lcoil = 180 µH VCC = 250 V

Rcoil = 0.7 Ω Rcoil = 0.05 Ω RL = 12.5 Ω
Vclamp = VCEO(sus) VCC = 20 V Pulse Width = 25 µs
INDUCTIVE TEST CIRCUIT OUTPUT WAVEFORMS RESISTIVE TEST CIRCUIT

t1 Adjusted to
Obtain IC
TEST CIRCUITS
TUT Lcoil (IC ) TUT

pk
1 Rcoil IC(pk) tf Clamped t1 ≈
1N4937 VCC RL
1
OR t
INPUT Lcoil Lcoil (IC ) 2
EQUIVALENT t1 tf pk VCC
SEE ABOVE FOR t2 ≈
VClamp
DETAILED CONDITIONS Vclamp VCC
VCE or Test Equipment
2 RS = Scope — Tektronix
Vclamp
0.1 Ω t 475 or Equivalent
TIME t2
* Adjust – V such that VBE(off) = 5 V except as required for RBSOA (Figure 8).
IC pk and hammer drivers, current and voltage waveforms are not

Vclamp in phase. Therefore, separate measurements must be made
on each waveform to determine the total switching time. For
90% Vclamp 90% IC
this reason, the following new terms have been defined.
IC tsv trv tfi tti
tsv = Voltage Storage Time, 90% IB1 to 10% Vclamp
trv = Voltage Rise Time, 10 – 90% Vclamp ā ā
tc tfi = Current Fall Time, 90 – 10% IC ā ā
VCE 10% Vclamp 10%

tti = Current Tail, 10 – 2% IC ā ā
IB 90% IB1 IC pk 2% IC tc = Crossover Time, 10% Vclamp to 10% IC

For the designer, there is minimal switching loss during
storage time and the predominant switching power losses
occur during the crossover interval and can be obtained us-
ing the standard equation from AN–222:
TIME PSWT = 1/2 VCC IC (tc) f
Figure 6. Inductive Switching Measurements In general, t rv + t fi ^
t c. However, at lower test currents
this relationship may not be valid.
As is common with most switching transistors, resistive
SWITCHING TIMES NOTE
switching is specified and has become a benchmark for de-
In resistive switching circuits, rise, fall, and storage times signers. However, for designers of high frequency converter
have been defined and apply to both current and voltage circuits, the user oriented specifications which make this a
waveforms since they are in phase. However, for inductive “SWITCHMODE” transistor are the inductive switching
loads which are common to SWITCHMODE power supplies speeds (tc and tsv) which are guaranteed.

The Safe Operating Area figures shown in Figures 7 and 8 are SAFE OPERATING AREA INFORMATION
specified ratings for these devices under the test conditions
shown. FORWARD BIAS
50 There are two Iimitations on the power handling ability of a
20 10 µs transistor: average junction temperature and second break-
IC, COLLECTOR CURRENT (AMPS)
10 down. Safe operating area curves indicate IC – VCE limits of

5.0 the transistor that must be observed for reliable operation,
dc MJ10015 i.e., the transistor must not be subjected to greater dissipa-
2.0
1.0 MJ10016 tion than the curves indicate.
0.5 The data of Figure 7 is based on TC = 25_C; T J(pk) is
TC = 25°C
variable depending on power level. Second breakdown pulse
0.2
limits are valid for duty cycles to 10% but must be derated
0.1
BONDING WIRE LIMIT when TC ≥ 25_C. Second breakdown limitations do not der-
0.05
THERMAL LIMIT (SINGLE PULSE) ate the same as thermal limitations. Allowable current at the
0.02 SECOND BREAKDOWN LIMIT voltages shown on Figure 7 may be found at any case tem-
0.01 perature by using the appropriate curve on Figure 9.
0.005
1.0 2.0 5.0 10 20 50 100 200 500 1000 REVERSE BIAS
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
For inductive loads, high voltage and high current must be
Figure 7. Forward Bias Safe Operating Area sustained simultaneously during turn–off, in most cases, with
the base to emitter junction reverse biased. Under these
conditions the collector voltage must be held to a safe level
at or below a specific value of collector current. This can be
50
accomplished by several means such as active clamping,
RC snubbing, load line shaping, etc. The safe level for these
IC, COLLECTOR CURRENT (AMPS)
40 TURN–OFF LOAD LINE devices is specified as Reverse Bias Safe Operating Area
BOUNDARY FOR MJ10016 and represents the voltage–current condition allowable dur-
THE LOCUS FOR MJ10015 ing reverse biased turn–off. This rating is verified under
30 IS 100 V LESS clamped conditions so that the device is never subjected to
an avalanche mode. Figure 8 gives the complete RBSOA
characteristics.
20 IC
IB1
u 10
10 VBE(off) = 5.0 V
TC = 25°C
0
0 100 200 300 400 500
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 8. Reverse Bias Switching Safe
Operating Area
100 10
FORWARD BIAS 9
POWER DERATING FACTOR (%)
SECOND BREAKDOWN
IB2(pk) , BASE CURRENT (AMP)
80 8
DERATING
7
60 6
5 IC = 20 A
THERMAL
40 DERATING 4
3
20 2
SEE TABLE 1 FOR CONDITIONS,
1 FIGURE 6 FOR WAVESHAPE.
0 0
0 40 80 120 160 200 0 1 2 3 4 5 6 7 8
TC, CASE TEMPERATURE (°C) VBE(off), REVERSE BASE VOLTAGE (VOLTS)
Figure 9. Power Derating Figure 10. Typical Reverse Base Current

versus VBE(off) With No External Base
Resistance
Motorola Bipolar Power Transistor Device Data 5

PACKAGE DIMENSIONS
A
N NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
C 2. CONTROLLING DIMENSION: INCH.
–T– SEATING INCHES MILLIMETERS
PLANE
E K DIM MIN MAX MIN MAX
A 1.510 1.550 38.35 39.37
B 0.980 1.050 24.89 26.67
D 2 PL C 0.250 0.335 6.35 8.51
D 0.057 0.063 1.45 1.60
U 0.25 (0.010) M T Q M Y M
E 0.060 0.135 1.52 3.43
G 0.420 0.440 10.67 11.18
L H 0.205 0.225 5.21 5.72
–Q– K 0.440 0.480 11.18 12.19
–Y– L 0.655 0.675 16.64 17.15
2 N 0.760 0.830 19.30 21.08
Q 0.151 0.175 3.84 4.19
G B U 1.177 1.197 29.90 30.40
H
1
STYLE 1:
PIN 1. BASE
2. EMITTER
CASE: COLLECTOR
CASE 197–05
TO–204AE TYPE
(TO–3 TYPE)
ISSUE J
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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different
applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does
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against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part.
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*MJ10015/D*
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Semiconductor Technical Data: 50 Ampere NPN Silicon Power Darlington Transistors 400 AND 500 VOLTS 250 WATTS

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SWITCHMODE is a trademark of Motorola, Inc.

 Motorola, Inc. 1995 1

2 Motorola Bipolar Power Transistor Device Data

Figure 1. DC Current Gain Figure 2. Collector–Emitter Saturation Voltage

Figure 3. Base–Emitter Saturation Voltage Figure 4. Collector Cutoff Region

Motorola Bipolar Power Transistor Device Data 3

INDUCTIVE TEST CIRCUIT TURN–ON TIME

Lcoil = 10 mH, VCC = 10 V Lcoil = 180 µH VCC = 250 V

INDUCTIVE TEST CIRCUIT OUTPUT WAVEFORMS RESISTIVE TEST CIRCUIT

TUT Lcoil (IC ) TUT

IC pk and hammer drivers, current and voltage waveforms are not

tc tfi = Current Fall Time, 90 – 10% IC ā ā

VCE 10% Vclamp 10%

IB 90% IB1 IC pk 2% IC tc = Crossover Time, 10% Vclamp to 10% IC

4 Motorola Bipolar Power Transistor Device Data

10 down. Safe operating area curves indicate IC – VCE limits of

Figure 9. Power Derating Figure 10. Typical Reverse Base Current

Motorola Bipolar Power Transistor Device Data 5

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6 Motorola Bipolar Power Transistor Device Data

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