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Tutorial 2

The document discusses power semiconductor switches and related concepts. It asks questions about types of power switches and their examples; effects of reverse recovery on diodes; differences between current-driven and voltage-driven devices; calculating storage charge and peak reverse current from reverse recovery time and current fall rate; advantages and disadvantages of MOSFETs; causes of forward conduction loss and switching loss; calculating maximum power dissipation, case temperature, and sink temperature given thermal resistances and temperatures; determining the largest switching frequency without a heat sink based on thermal parameters; and calculating junction temperature and maximum power without a heat sink.

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Mohamad Syazwan
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© Attribution Non-Commercial (BY-NC)
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Download as PDF, TXT or read online on Scribd
69 views

Tutorial 2

The document discusses power semiconductor switches and related concepts. It asks questions about types of power switches and their examples; effects of reverse recovery on diodes; differences between current-driven and voltage-driven devices; calculating storage charge and peak reverse current from reverse recovery time and current fall rate; advantages and disadvantages of MOSFETs; causes of forward conduction loss and switching loss; calculating maximum power dissipation, case temperature, and sink temperature given thermal resistances and temperatures; determining the largest switching frequency without a heat sink based on thermal parameters; and calculating junction temperature and maximum power without a heat sink.

Uploaded by

Mohamad Syazwan
Copyright
© Attribution Non-Commercial (BY-NC)
Available Formats
Download as PDF, TXT or read online on Scribd
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Tutorial 2: Power Semiconductor Switches 1.

Describe three (3) types of power switches and give an example of semiconductor device fall under each category. 2. State three (3) effect of reverse recovery on diode 3. State the difference between current driven device and voltage driven device. Give an example of semiconductor devices for each type of devices. 4. The reverse recovery time of a diode is t rr 3s , and the rate of fall of the diode current is di / dt 30 A / s . Determine, a)the storage charge QRR , b)the peak reverse current I RR . 5. State 2 advantages and 2 disadvantage of MOSFET. 6. Forward conductor loss and switching loss are two types of losses that occur in real power switches but not in ideal power switch. Explain why these conditions happen. 7. The maximum junction temperature of a transistor is 150oC and the ambient temperate is 25oC. If the thermal resistance from junction to case is 0.4oC/W, thermal resistance from case to sink is 0.1oC/W and thermal resistance from sink to ambient is 0.5oC/W, Determine: a) Maximum power dissipation b) Case temperature c) Sink temperature 8. A MOSFET absorbs a thermal power of 17+10-3fs W, where fs is the switching frequency. The thermal resistances are 50C/W from the junction to the case, 90C/W for the case to the heat sink, and 2.50C/W for the heat sink to ambient. Assume ambient temperature is 400C and maximum junction temperature is 1750C. Determine the largest switching frequency that can be operated without a heat sink. 9. A MOSFET with no heat sink absorbs a thermal power of 2.0W. The thermal resistance from junction to ambient is 400C/W, if the ambient temperature is 300C. Determine the junction temperature and if the maximum junction temperature is 1500C, how much power can be absorbed without requiring a heat sink.

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