FM120-M+ THRU MMBT3904TT1 General Purpose Transistors FM1200-M 1.

0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V

WILLAS

SOD-123+ PACKAGE

Pb Free Produc

Features NPN Silicon

Package outline
SOD-123H

FEATURE better reverse leakage current and thermal resistance.

Simplifies Circuit Design. optimize board space. product forhigh packing code suffix "G" Low power loss, efficiency. RoHS free product for low packing code suffix "H" High current capability, forward voltage drop. Halogen High surge capability. Guardring for overvoltage protection. ORDERING INFORMATION Ultra high-speed switching. Marking Shipping Silicon epitaxial planar chip, metal silicon junction. Device Lead-free parts meet environmental standards of MMBT3904TT1 MA 3000/Tape&Reel MIL-STD-19500 /228 RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H"

Batch process design, excellent power dissipation offers Low profile surface mounted application in order to

0.146(3.7) 0.130(3.3)

0.012(0.3) Typ.

0.071(1.8) 0.056(1.4)

MAXIMUM RATINGS Mechanical

data
Value Unit
0.031(0.8) Typ.

SOT-523
0.040(1.0) 0.024(0.6)

CollectorEmitter Voltage V CEO 40 Vdc plastic, SOD-123H Case : Molded , Vdc CollectorBase Voltageterminals, V Terminals :Plated solderable per 60 MIL-STD-750 CBO
Method 2026 EmitterBase Voltage V EBO Polarity : Indicated by cathode band Collector Current Continuous IC Mounting Position : Any 6.0 200

Rating Symbol Epoxy : UL94-V0 rated flame retardant

3 COLLECTOR

0.031(0.8) Typ.

Vdc mAdc

Dimensions in1 inches and (millimeters)

BASE

THERMAL CHARACTERISTICS
Characteristic

Weight : Approximated 0.011 gram

Symbol Max Unit

2 EMITTER

MAXIMUM RATINGS ELECTRICAL Total Device Dissipation FR 4 Board, AND (1) PD Ratings TAat = 25 25C ambient temperature unless otherwise specified.

CHARACTERISTICS 200 mW

SingleDerate phase above half wave, 60Hz, resistive of inductive load. 25C For capacitive derate Junction current by Thermal load, Resistance, to 20% Ambient
Total Device Dissipation RATINGS FR-4 Board(2), TA = 25C Marking Code Derate above 25C Maximum Recurrent Peak Reverse Voltage Thermal Resistance, Junction to Ambient Maximum RMS Voltage Junction and Storage Temperature
Maximum DC Blocking Voltage Maximum Average Forward Rectified Current

1.6 mW/C RJA 600 C/W P 300 mW D H F M130-M H FM140-M H FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH SYMBOL FM120-M
VRRM VRMS VDC IO IFSM 12 20 13 14 15 302.4 40 mW/C 50 400 C/W 21 28 35 55 to +150 C 30 40 50 16 60 42 60 1.0 30 18 80 56 80 10 100 70 100 115 150 105 150 120 200 140 200

RJA 14 TJ , Tstg 20

Peak Forward Surge Current 8.3 ms single half sine-wave

DEVICE MARKING

MMBT3904TT1 = MA superimposed on rated load (JEDEC method)

Typical Junction Capacitance (Note 1) Operating Temperature Range

Typical Thermal Resistance (Note 2) Runless JA ELECTRICAL CHARACTERISTICS (TA = 25C otherwise noted.)
Characteristic
CJ TJ
TSTG

Symbol

-55 to Min +125

Max

40 120 Unit - 65 to +175

-55 to +150

Storage Range OFFTemperature CHARACTERISTICS

CollectorEmitter Breakdown Voltage(3) (I C = 1.0 mAdc) Maximum Forward Voltage at 1.0A DC CollectorBase Breakdown Voltage
Rated DC Blocking Voltage CHARACTERISTICS Maximum Average Reverse Current at @T A=25

SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH

V (BR)CEO V (BR)CBO V (BR)EBO I BL I CEX

40

Vdc

VF IR

0.50 60

0.70

(I C = 10 Adc)

Vdc 0.5
10 Vdc

0.85

0.9

0.92

EmitterBase Breakdown Voltage

@T A=125

6.0

50 50

(I E = 10 Adc) NOTES:
1- Measured 1 MHZ and applied reverse voltage of 4.0 VDC. Baseat Cutoff Current

nAdc nAdc

( V Resistance V EB = 3.0 Vdc, ) 2- Thermal From Junction to Ambient CE= 30 Vdc, Collector Cutoff Current ( V CE = 30Vdc, V BE = 3.0Vdc ) 1. FR-4 Minimum Pad. 2. FR-4 1.0 x 1.0 Inch Pad. 3. Pulse Test: Pulse Width <300 s, Duty Cycle <2.0%.

2012-06 2012-11

ELECTRONIC COR WILLASWILLAS ELECTRONIC CORP.

FM120-M THRU MMBT3904TT1 General Purpose Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
Batch process design, excellent power dissipation offers
mounted application in order to Low profile surface Characteristic

WILLAS

Pb Free Produ

Features

Package outline
Symbol hFE Min
SOD-123H Max
0.146(3.7) 0.130(3.3)

better reverse leakage current and resistance. ELECTRICAL CHARACTERISTICS (T Athermal = 25C unless otherwise noted) (Continued)

ON CHARACTERISTICS (3)

optimize board space. Low power loss, high efficiency. DC Current Gain(1) current capability, low forward voltage drop. High (I =0.1surge mAdc,capability. V CE =1.0 Vdc) High C

Unit
0.012(0.3) Typ.

(I = 1.0 mAdc, Vovervoltage CE = 1.0 Vdc) protection. Guardring for C (I = 10 high-speed mAdc, V CE =switching. 1.0 Vdc) Ultra C (I = 50mAdc, V CE = 1.0Vdc) Silicon epitaxial planar chip, metal silicon junction. C Lead-free parts meet environmental standards of C (I = 100mAdc, V CE =1.0 Vdc) MIL-STD-19500 /228 Voltage CollectorEmitter Saturation RoHS product for packing code suffix "G" (I C = 10 mAdc, I B = 1.0 mAdc)(3) Halogen free product for packing code suffix "H" (I C = 50 mAdc, I B = 5.0mAdc) Mechanical data BaseEmitter Saturation Voltage(3) Epoxy : UL94-V0 rated flame retardant C (I = 10 mAdc, I B = 1.0mAdc) Case : Molded plastic, SOD-123H (I C = 50mAdc, I B = 5.0mAdc )

40 70 100 60 30

300 Vdc 0.2 0.3 Vdc 0.85 0.95

0.071(1.8) 0.056(1.4)

VCE(sat)

V BE(sat)

Terminals :Plated terminals, solderable per MIL-STD-750 SMALLSIGNAL CHARACTERISTICS

Method 2026 CurrentGain Bandwidth Product C Polarity : Indicated by cathode band = 10mAdc, V CE= 20Vdc, f = 100MHz) (I Mounting Position : Any Output Capacitance (V I E = 0, f = 1.0 MHz) CB = 5.0Vdc, Weight : Approximated 0.011 gram

0.65 0.031(0.8) Typ.

0.040(1.0) 0.024(0.6)

0.031(0.8) Typ.

fT C obo

200 and (millimeters) MHz Dimensions in inches 4.0 pF

Input Capacitance C ibo 8.0 pF MAXIMUM RATINGS I C = 0, f = 1.0 MHz) AND ELECTRICAL CHARACTERISTICS (V BE = 0.5Vdc, Input Impedancen Ratings at 25 ambient temperature unless otherwise specified. h ie 1.0 10 pF 10Vdc, I C= 1.0mAdc, f = 1.0 kHz) (V CE = half Single phase wave, 60Hz, resistive of inductive load. Voltage load, Feedback Ratio For capacitive derate current by 20% h re 0.5 8.0 X10 4 (V CE = 10 Vdc, I C = 1.0 mAdc, f = 1.0 kHz) SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M RATINGS SmallSignal Current Gain Marking Code 100 400 18 12 13 h fe 14 15 16 10 115 120 (V CE = 10 Vdc, I C = 1.0 mAdc, f = 1.0 kHz) 20 30 40 50 60 80 100 150 200 Maximum Recurrent Peak Reverse Voltage VRRM Output Admittance 1.0 40 56 mhos 14 21 h oe 28 35 42 70 105 140 Maximum RMS Voltage VRMS (V CE = 10 Vdc, I C = 1.0 mAdc, f = 1.0 kHz) Maximum DC Blocking Voltage 20 30 40 50 60 80 100 150 200 VDC Noise Figure NF 5.0 dB Maximum Average Forward Rectified Current IO 1.0 (V CE = 5.0 Vdc, I C = 100Adc, R S = 1.0 k , f = 1.0 kHz) Peak Forward Surge CHARACTERISTICS Current 8.3 ms single half sine-wave SWITCHING 30 IFSM
superimposed on rated load (JEDEC method)

Delay Time (V CC = 3.0 Vdc,V BE = 0.5Vdc td RJA Rise Time I C = 10 mAdc, I B1 = 1.0mAdc) tr Typical Junction Capacitance (Note 1) CJ ts Storage Time (V CC = 3.0Vdc, -55 to +125 Operating Temperature Range TJ Fall Time I C = 10 mAdc,I B1 = I B2 = 1.0mAdc) tf
Typical Thermal Resistance (Note 2) Storage Temperature Range
TSTG

35 40 35 120 200

ns

50 - 65 to +175

-55 to +150 ns

3. Pulse Test: Pulse Width <300 s, Duty Cycle <2.0%.

CHARACTERISTICS Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25 Rated DC Blocking Voltage @T A=125

SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M

VF IR

0.50

0.70 0.5 10

0.85

0.9

0.92

NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient

2012-112012-06

ELECTRONIC WILLAS WILLAS ELECTRONIC CORP.COR

FM120-M THRU MMBT3904TT1 General Purpose Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.

WILLAS

Pb Free Produ

Features

Package outline
SOD-123H

Low profile surface mounted application in order to

optimize board space.

Low power loss, high efficiency. High current capability, low forward voltage drop. +3 V High surge capability. DUTY CYCLE = 2% 10 < t1 < 500 ms Guardring for overvoltage protection. 300 ns DUTY CYCLE = 2% +10.9 Vswitching. Ultra high-speed 275 Silicon epitaxial planar chip, metal silicon junction. 10environmental k standards of Lead-free parts meet
-0.5 V

0.146(3.7) 0.130(3.3)

0.012(0.3) Typ.

t1

+3 V +10.9 V 10 k 1N91k CS < 4 pF* 275 0.056(1.4)

0.071(1.8)

MIL-STD-19500 /228 RoHS product<for packing code suffix "G" CS < 4 pF* 1 ns Halogen free product for packing code suffix "H"

Mechanical data

-9.1 V

< 1 ns

0.024(0.6) Epoxy : UL94-V0 rated flame retardant Case : Molded plastic, SOD-123H * Total shunt capacitance of test jig and connectors 0.031(0.8) Typ. 0.031(0.8) Typ. , Terminals :Plated terminals, solderable per MIL-STD-750 Figure 1. Delay and Rise Time Figure 2. Storage and Fall Time

0.040(1.0)

Polarity : Indicated by cathode band Mounting Position : Any Weight : Approximated 0.011 gram
10 Ratings at 25 ambient temperature unless otherwise specified. 5000 3000 2000 Q, CHARGE (pC)
12 20 14 20

Method 2026 Equivalent Test Circuit

Equivalent Test Circuit

Dimensions in inches and (millimeters)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Single phase half wave, 60Hz, resistive of inductive load. 7.0 For capacitive load, derate current by 20%
5.0
RATINGS Marking Code

CAPACITANCE (pF)

VCC = 40 V IC/IB = 10

SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M

CiboVoltage Maximum Recurrent Peak Reverse 3.0 2.0

VRRM VRMS VDC IO IFSM

Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current

Cobo

1000 13 700 30 500 21 300 30 200 100 70 50

14 40 28 40

15 50 35 50

16 60 42 60 1.0 30

18 80

10 100 70 100

115 150 105 150

120 200 140 200

QT

56 80

QA

Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method)

200

0.1 Thermal 0.2 0.3 0.5 0.7 1.0 2.0 3.0 Typical Resistance (Note 2)
Operating Temperature Range

1.0

5.0 7.0 10

20 30 40 RJA
CJ TJ
TSTG

1.0

REVERSE BIAS VOLTAGE (VOLTS) Typical Junction Capacitance (Note 1)

2.0 3.0

Figure 3. Capacitance Storage Temperature Range

-55 to +125

40 20 30 50 70 100 120 IC, COLLECTOR CURRENT (mA) -55 to +150

5.0 7.0 10

Figure 4 Charge Data -.6 5 to +175

CHARACTERISTICS Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25 Rated DC Blocking Voltage

SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M

VF
@T A=125

0.50

0.70 0.5 10

0.85

0.9

0.92

IR

NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient

2012-11 2012-06

ELECTRONIC WILLAS WILLAS ELECTRONIC CORP. COR

FM120-M+ THRU MMBT3904TT1 FM1200-M General Purpose Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V

WILLAS

SOD-123+ PACKAGE

Pb Free Produc

process design, excellent power dissipation offers Batch 500 better reverse leakage current and thermal resistance.
I C /I B = 10
300 profile surface mounted application in order to Low 200 optimize

Features

Package outline
500 300 200 100 70 50 30 20 10 7 5
0.071(1.8) 0.056(1.4) 0.146(3.7) 0.130(3.3)

SOD-123H

V CC = 40 V I C /I B = 10
0.012(0.3) Typ.

board space.

t d @suffix V OB = "G" 0V product for packing code RoHS 5

C

MIL-STD-19500 /228 7

2.0 V
100

1.0 free 2.0 3.0 5.0 7.0 10 20 30 50 "H" 70 Halogen product for packing code suffix

200

t r, RISE TIME (ns)

Low power loss, high efficiency. 100 High 70 current capability, low forward voltage drop. t r @ V CC = 3.0 V surge capability. High 50 Guardring for overvoltage protection. 30 high-speed switching. Ultra 40 V 20 Silicon epitaxial planar chip, metal silicon junction. parts meet environmental standards 15 of V Lead-free 10

TIME (ns)

Mechanical data I , COLLECTOR CURRENT (mA)

rated flame retardant Epoxy : UL94-V0 Figure 5. TurnOn Time : Molded plastic, SOD-123H Case 500 , t s 1 /8 tf t s = MIL-STD-750 Terminals :Plated terminals, solderable per 300 t s , STORAGE TIME (ns)
200 500 300 200 100 70 50 30

1.0

2.0 3.0

5.0 7.0 10

20

30

50 70 100

200
0.040(1.0) 0.024(0.6)

I C , COLLECTOR CURRENT (mA)

Figure 6. Rise Time

0.031(0.8) Typ.

0.031(0.8) Typ.

I C /I 2026 B =10 I C /I B =20 Method

I B1 = I B2

V CC = 40 V I B1 = I B2 I in /I inches B = 20 Dimensions C and (millimeters)

I C /I B =20 I C /I B =10

30 20

t f, , FALL TIME (ns)

Polarity : Indicated by cathode band 100 70 Position : Any Mounting 50 Weight : Approximated 0.011 gram

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS 20

10 7 5

I C /I B = 10

Ratings at 25 ambient temperature unless otherwise specified. 10 Single phase half wave, 60Hz, resistive of inductive load. 7 For capacitive 5 load, derate current by 20%
1.0 2.0 3.0

RATINGS

5.0 7.0 10

20

30

50 70 100

Marking Code

I C , COLLECTOR CURRENT (mA)

SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH

200

1.0

2.0 3.0

5.0 7.0 10

20

30

50

70 100

200

Figure 7. Storage Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage Maximum DC Blocking Voltage

Time VRRM
VRMS VDC

12 20 14 20

13 30 21 30

14 40 28 40

I C , COLLECTOR 15 16 CURRENT 18 (mA)10

Figure60 8. Fall Time 50 80

35 50 42 60 56 80

100 70 100

115 150 105 150

120 200 140 200

TYPICAL AUDIO SMALLSIGNAL CHARACTERISTICS Maximum Average Forward Rectified Current IO 1.0 NOISE FIGURE VARIATIONS
Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method)

IFSM (V CE = 5.0 Vdc, T A = 25C, Bandwidth = 1.0 Hz) 30 RJA CJ TJ

TSTG

Typical Thermal Resistance (Note 2) Typical Junction Capacitance (Note 1) Operating Temperature Range Storage Temperature Range
12 10 8

14 -55 to +125 12

40 120
f = 1.0 kHz

-55 to +150

SOURCE RESISTANCE=200 I C = 1.0 mA

I C = 1.0-mA 65 to +175

NF, NOISE FIGURE (dB)

NF, NOISE FIGURE (dB)

FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH CHARACTERISTICS SOURCE RESISTANCE =200 SYMBOL

10

I C = 0.5 mA

0.5 mA I C = DC Maximum Forward Voltage at 1.0A

VF

0.50 8
6 4 2 0 0.1 0.2 0.4

0.70 0.5 10

0.85

I C = 50 A

0.9

0.92

Reverse Current at SOURCE @T A=25 RESISTANCE IR =1.0k A I C = 50 @T A=125 Rated DC Blocking Voltage
4

Maximum

6 Average

I C = 100 A

NOTES:

2 MHZ 1- Measured at 1 and applied reverse voltage SOURCE RESISTANCE=500 of 4.0 VDC.

I C From = 100 A 2- Thermal Resistance Junction to Ambient

0 0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 100

1.0

2.0

4.0

10

20

40

100

f, FREQUENCY (kHz)

Figure 9.

R S , SOURCE RESISTANCE (k)

Figure 10.

2012-06 2012-11

ELECTRONIC COR WILLASWILLAS ELECTRONIC CORP.

FM120-M+ THRU MMBT3904TT1 General Purpose Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V

WILLAS

SOD-123+ PACKAGE

Pb Free Produc

hoffers PARAMETERS Batch process design, excellent power dissipation

better reverse leakage current and thermal resistance.

Features

Package outline
(V CE = 10 Vdc, f = 1.0 kHz, T A = 25C)
100 50 20 10 5

Low profile surface mounted application in order to

optimize board space.

SOD-123H

hoe, OUTPUT ADMITTANCE ( mhos)

hfe, CURRENT

Low 300 power loss, high efficiency. High current capability, low forward voltage drop. High surge capability. for overvoltage protection. Guardring 200 Ultra high-speed switching. Silicon epitaxial planar chip, metal silicon junction. parts meet environmental standards of Lead-free 100
MIL-STD-19500 /228

0.146(3.7) 0.130(3.3)

0.012(0.3) Typ.

0.071(1.8) 0.056(1.4)

70 product for packing code suffix "G" RoHS

Mechanical data

Halogen free product for packing code suffix "H" 50

2 1 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0

0.031(0.8) Typ. 0.040(1.0) 0.024(0.6)

: UL94-V0 rated flame retardant Epoxy 30 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 : Molded plastic, SOD-123H Case0.1 , I C , COLLECTOR CURRENTper (mA) Terminals :Plated terminals, solderable MIL-STD-750

10
0.031(0.8) Typ.

I C , COLLECTOR CURRENT (mA)

hie, INPUT IMPEDANCE (k)

Polarity : Indicated by cathode band 20 Mounting Position : Any 10 Weight : Approximated 0.011 gram
5.0

h re, VOLTAGE FEEDBACK RATIO (X 104 )

Figure Method 2026 11. Current Gain

Figure 12. Output Admittance

10 7.0 5.0

Dimensions in inches and (millimeters)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS 3.0

2.0

2.0 Ratings at 25 ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. 1.0 For capacitive load, derate current by 20% 0.5

RATINGS Peak Reverse Voltage

0.3 0.5 1.0 2.0

SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH

1.0 0.7

Marking Code Maximum

0.2 Recurrent

VRRM
3.0

12 20
10 14

13 30 0.5 21 30

Maximum RMS 0.1 Voltage0.2

5.0 VRMS I C , COLLECTOR CURRENT (mA) Maximum DC Blocking Voltage VDC

0.1

14 40 28 40

0.2

0.3

15 50 35

0.5

16 60 42

1.0

2.0

18 80 56

3.0

5.0

10 100 70

10

115 150 105 150

120 200 140 200

Figure 13. Input Impedance Maximum Average Forward Rectified Current IO

20

I C , COLLECTOR 50 60 CURRENT 80 (mA) 100

30 40 120

Figure 14. Voltage Feedback Ratio 1.0

Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method)

h FE, DC CURRENT GAIN (NORMALIZED)

Typical Thermal Resistance (Note 2) Typical Junction 2.0 Capacitance (Note 1) Operating Temperature Range Storage Temperature Range 1.0
0.7

TYPICAL STATIC CHARACTERISTICS RJA

CJ
TJ =J +125C T

IFSM

-55 to V CE = +150 1.0 V

-55 to +125

- 65 to +175

TSTG

+25C

CHARACTERISTICS

Maximum Forward Voltage at 1.0A DC 0.5 Maximum Average Reverse Current at @T A=25 Rated DC
0.3 Blocking 0.2

SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH 55C 0.9 0.92 VF 0.50 0.70 0.85

Voltage

@T A=125

IR

0.5 10

NOTES:

1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.

2- Thermal Resistance From Junction to Ambient

0.1 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200

I C , COLLECTOR CURRENT (mA)

Figure 15. DC Current Gain

2012-06 2012-11

WILLAS ELECTRONIC COR WILLAS ELECTRONIC CORP.

FM120-M+ THRU MMBT3904TT1 General Purpose Transistors FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V

WILLAS

SOD-123+ PACKAGE

Pb Free Produc

Batch process design, excellent power dissipation offers

better reverse leakage current and thermal resistance. V CE, COLLECTOR EMITTER VOLTAGE (VOLTS)

Features

Package outline
SOD-123H

Low profile surface mounted application in order to

optimize board space.

Low power loss, high efficiency. 1.0 High current capability, low forward voltage drop. High surge capability. Guardring for overvoltage protection. 0.8 I C = 1.0 mA 10 mA switching. Ultra high-speed Silicon epitaxial planar chip, metal silicon junction. 0.6 Lead-free parts meet environmental standards of
0.4RoHS

0.146(3.7) 0.130(3.3)

0.012(0.3) Typ.

T J = 25C 30 mA 100 mA
0.071(1.8) 0.056(1.4)

MIL-STD-19500 /228 product for packing code suffix "G" Halogen free product for packing code suffix "H"
0.040(1.0) 0.024(0.6)

0.2

Mechanical data
0.031(0.8) Typ. 0.031(0.8) Typ.

Epoxy : UL94-V0 rated flame retardant 0 Case : Molded plastic, SOD-123H , 0.01 0.02 0.03 0.05 solderable 0.07 0.1 per MIL-STD-750 0.2 0.3 Terminals :Plated terminals,
Method 2026

0.5

0.7

1.0

2.0

3.0

5.0

7.0

10

I B , BASE CURRENT (mA)

Polarity : Indicated by cathode bandFigure 16. Collector Saturation Region Dimensions in inches and (millimeters) Mounting Position : Any Weight : Approximated 0.011 gram 1.0 1.2
T J = 25C
1.0

COEFFICIENT(mV/C)

V, VOLTAGE (VOLTS)

Ratings at 25 ambient temperature unless otherwise specified. Single0.8 phase half wave, 60Hz, resistive of inductive load. V BE @ V CE =1.0 V For capacitive load, derate current by 20%
0.6 0.4

MAXIMUM RATINGS ELECTRICAL CHARACTERISTICS V AND BE(sat) @ I C /I B =10 0.5

0 0.5 1.0

+25C TO +125C 55C TO +25C

VC FOR V CE(sat)

RATINGS

Marking Code Maximum 0.2 RMS Voltage Maximum DC Blocking Voltage

SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH 12 13 14 15 16 18 +25C TO 10+125C 115 120

Maximum Recurrent Peak Reverse Voltage V CE(sat) @ I C /I B =10 VRRM

20 14

30

40

50

60

80 56

VRMS VDC
50

211.5 30
2.0 0

28 40
20

20
200

VB

FOR V BE(sat)

35

42 60

55C TO +25C

100 70

150 105

200 140

50

80

100
180

150
200

200

0 Maximum Average Forward Rectified Current 1.0 2.0 3.0 5.0 10 20

IO 100 Peak Forward Surge Current 8.3 ms single half sine-wave IFSM CURRENT (mA) C , COLLECTOR superimposed on ratedIload (JEDEC method)

1.0 100 120 140 160 30 CURRENT (mA) I C , COLLECTOR

40 60 80

Figure 17. Typical Thermal Resistance (Note 2)

Operating Temperature Range Storage Temperature Range

ON Voltages RJA
CJ TJ

Figure 18. Temperature Coefficients

40 120

Typical Junction Capacitance (Note 1)

-55 to +125

-55 to +150

- 65 to +175

TSTG

CHARACTERISTICS Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25 Rated DC Blocking Voltage

SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH

VF
@T A=125

0.50

0.70 0.5 10

0.85

0.9

0.92

IR

NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient

2012-06 2012-11

WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP.

FM120-M+ THRU MMBT3904TT1 General Purpose Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V

WILLAS

SOD-123+ PACKAGE

Pb Free Produc

Batch process design, excellent power dissipation offers

better reverse leakage current and thermal resistance.

Features

Package outline
SOD-123H

Low profile surface mounted application in order to

optimize board space.

.004(0.10)MIN.

MIL-STD-19500 /228

Halogen free product for packing code suffix "H"

Mechanical data

.035(0.90) .028(0.70)

RoHS product for packing code suffix "G"

.067(1.70) .059(1.50)
0.031(0.8) Typ.

.069(1.75) .057(1.45) .008(0.20) .004(0.10)

16 60 42 60 1.0 30 18 80 56 80 10 100 70 100

Low power loss, high efficiency. S27-523 High current capability, low forward voltage drop. High surge capability. Guardring for overvoltage protection. Ultra high-speed switching. Silicon epitaxial planar chip, metal silicon junction. Lead-free parts meet environmental standards of

0.146(3.7) 0.130(3.3)

0.012(0.3) Typ.

0.071(1.8) 0.056(1.4)

Epoxy : UL94-V0 rated flame retardant Case : Molded plastic, SOD-123H , Terminals :Plated terminals, solderable per MIL-STD-750
Method 2026

0.040(1.0) 0.024(0.6)

0.031(0.8) Typ.

.014(0.35) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS .010(0.25) Ratings at 25 ambient temperature unless otherwise specified. .043(1.10) Single phase half wave, 60Hz, resistive of inductive load. current by 20% For capacitive load, derate .035(0.90)
RATINGS Marking Code Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current

Polarity : Indicated by cathode band Mounting Position : Any Weight : Approximated 0.011 gram

Dimensions in inches and (millimeters)

SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M

VRRM VRMS VDC IO IFSM RJA CJ TJ

TSTG

12 20 14 20

13 30 21 30

14 40 28 40

15 50 35 50

115 150 105 150

120 200 140 200

Peak Forward Surge Current 8.3 ms single half sine-wave

.004(0.10)MAX. superimposed on rated load (JEDEC method)

Typical Thermal Resistance (Note 2) Typical Junction Capacitance (Note 1) Operating Temperature Range Storage Temperature Range

-55 to +125

.035(0.90) .028(0.70)

40 120

-55 to +150

- 65 to +175

CHARACTERISTICS Maximum Forward Voltage at 1.0A DC Rated DC Blocking Voltage

.014(0.35) SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH .006(0.15) 0.9 0.92 VF 0.50 0.70 0.85
IR 0.5 10

Maximum Average Reverse Current at @T A=25 @T A=125

NOTES:

1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.

Dimensions in inches and (millimeters)

2- Thermal Resistance From Junction to Ambient

2012-06 2012-11

WILLAS ELECTRONIC COR WILLAS ELECTRONIC CORP.