D 10 NF 10
D 10 NF 10
STD10NF10
VDSS 100 V
RDS(on) <0.13
ID 13 A
TYPICAL RDS(on) = 0.115 EXCEPTIONAL dv/dt CAPABILITY APPLICATION ORIENTED CHARACTERIZATION THROUGH-HOLE IPAK (TO-251) POWER PACKAGE IN TUBE (SUFFIX -1") SURFACE-MOUNTING DPAK (TO-252) POWER PACKAGE IN TAPE & REEL (SUFFIX T4")
3 2 1
IPAK TO-251 (Suffix -1) DPAK TO-252 (Suffix T4)
3 1
DESCRIPTION
This MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced highefficiency, high-frequency isolated DC-DC converters for Telecom and Computer applications. It is also intended for any applications with low gate drive requirements.
Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 k) Gate- source Voltage Drain Current (continuous) at TC = 25C Drain Current (continuous) at TC = 100C Drain Current (pulsed) Total Dissipation at TC = 25C Derating Factor Peak Diode Recovery voltage slope Single Pulse Avalanche Energy Storage Temperature Operating Junction Temperature
(1) ISD 13A, di/dt 300A/s, VDD V(BR)DSS, Tj TJMAX (2) Starting T j = 25 oC, ID = 15A, VDD = 50V
1/10
STD10NF10
THERMAL DATA
Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Thermal Resistance Junction-ambient Maximum Lead Temperature For Soldering Purpose Max Max 3.0 100 300 C/W C/W C
ON (*)
Symbol VGS(th) RDS(on) Parameter Gate Threshold Voltage Static Drain-source On Resistance Test Conditions VDS = VGS VGS = 10 V ID = 250 A ID = 5 A Min. 2 Typ. 3 0.115 Max. 4 0.13 Unit V
DYNAMIC
Symbol gfs (*) Ciss Coss Crss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VDS = 15 V ID = 5 A Min. Typ. 20 460 70 30 Max. Unit S pF pF pF
2/10
STD10NF10
ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON
Symbol td(on) tr Qg Qgs Qgd Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions ID = 5 A VDD = 50 V RG = 4.7 VGS = 10 V (Resistive Load, Figure 3) VDD = 80V ID = 10A VGS= 10V Min. Typ. 16 25 15.3 3.7 4.7 21 Max. Unit ns ns nC nC nC
SWITCHING OFF
Symbol td(off) tf Parameter Turn-off Delay Time Fall Time Test Conditions ID = 5 A VDD = 27 V RG = 4.7, VGS = 10 V (Resistive Load, Figure 3) Min. Typ. 32 8 Max. Unit ns ns
(*)Pulsed: Pulse duration = 300 s, duty cycle 1.5 %. ()Pulse width limited by safe operating area.
Thermal Impedance
3/10
STD10NF10
Output Characteristics Transfer Characteristics
Transconductance
Capacitance Variations
4/10
STD10NF10
Normalized Gate Threshold Voltage vs Temperature Normalized on Resistance vs Temperature
5/10
STD10NF10
Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform
Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times
6/10
STD10NF10
H
C A C2
L2
D
B3 B6
A1
B5
A3
=
B2
G
=
L1
0068771-E
7/10
STD10NF10
DIM.
C2
DETAIL "A"
A1
L2
D DETAIL "A"
B
B2
L4
A2
0068772-B
8/10
STD10NF10
9/10
STD10NF10
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is registered trademark of STMicroelectronics 2002 STMicroelectronics - All Rights Reserved All other names are the property of their respective owners. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com
10/10