STP80NF75L STB80NF75L STB80NF75L-1: N-CHANNEL 75V - 0.008 - 80A TO-220/D Pak/I PAK Stripfet™ Ii Power Mosfet
STP80NF75L STB80NF75L STB80NF75L-1: N-CHANNEL 75V - 0.008 - 80A TO-220/D Pak/I PAK Stripfet™ Ii Power Mosfet
VDSS 75 V 75 V 75 V
ID 80 A 80 A 80 A
3 1
3 12
TYPICAL RDS(on) = 0.008 EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW THRESHOLD DRIVE
D2PAK TO-263
I2PAK TO-262
DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s HIGH CURRENT, HIGH SWITCHING SPEED s MOTOR CONTROL, AUDIO AMPLIFIERS s DC-DC & DC-AC CONVERTERS s SOLENOID AND RELAY DRIVERS
3 1 2
TO-220
Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 k) Gate- source Voltage Drain Current (continuos) at TC = 25C Drain Current (continuos) at TC = 100C Drain Current (pulsed) Total Dissipation at TC = 25C Derating Factor Peak Diode Recovery voltage slope Single Pulse Avalanche Energy Storage Temperature Max. Operating Junction Temperature
(1) ISD 80A, di/dt 960A/s, VDD V(BR)DSS, Tj TJMAX (2) Starting T j = 25 oC, ID = 40A, VDD= 40V
November 2001
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THERMAL DATA
Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Thermal Resistance Junction-ambient Maximum Lead Temperature For Soldering Purpose Max Max Typ 0.5 62.5 300 C/W C/W C
ON (*)
Symbol VGS(th) RDS(on) Parameter Gate Threshold Voltage Static Drain-source On Resistance Test Conditions VDS = VGS VGS = 5 V VGS = 10 V ID = 250 A ID = 40 A ID = 40 A Min. 1 Typ. 1.6 0.01 0.008 Max. 2.5 0.013 0.010 Unit V
DYNAMIC
Symbol gfs (*) Ciss Coss Crss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VDS = 25 V ID = 40 A Min. Typ. 50 5000 835 360 Max. Unit S pF pF pF
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ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON
Symbol td(on) tr Qg Qgs Qgd Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions ID = 40 A VDD = 37 V RG = 4.7 VGS = 4.5 V (Resistive Load, Figure 3) VDD= 60 V ID= 80 A VGS= 5V Min. Typ. 30 145 110 20 55 140 Max. Unit ns ns nC nC nC
SWITCHING OFF
Symbol td(off) tf Parameter Turn-off Delay Time Fall Time Test Conditions ID = 40 A VDD = 37V RG = 4.7, VGS = 4.5 V (Resistive Load, Figure 3) Min. Typ. 130 90 Max. Unit ns ns
(*)Pulsed: Pulse duration = 300 s, duty cycle 1.5 %. ()Pulse width limited by safe operating area.
Thermal Impedance
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Output Characteristics Transfer Characteristics
Transconductance
Capacitance Variations
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Normalized Gate Threshold Voltage vs Temperature Normalized on Resistance vs Temperature
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Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform
Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times
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D1
L2
F1
G1
Dia. L5 L7 L6 L4
P011C
L9
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F2
H2
STB80NF75L/-1/ STP80NF75L
DIM.
C2
B2
L1 L2 D L
P011P5/E
A1
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D2PAK FOOTPRINT
* on sales type
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Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is registered trademark of STMicroelectronics 2001 STMicroelectronics - All Rights Reserved All other names are the property of their respective owners. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com
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