P4NC60

STP4NC60 STP4NC60FP
N - CHANNEL 600V - 1.8 - 4.2 A TO-220/TO-220FP PowerMESH MOSFET

PRELIMINARY DATA TYPE ST P4NC60 ST P4NC60FP
s s s s s
V DSS 600 V 600 V
R DS(on) <2.2 <2.2
ID 4.2 A 4.2 A
TYPICAL RDS(on) = 1.8 EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED
1
3 2
1 2
DESCRIPTION The PowerMESH is the evolution of the first generation of MESH OVERLAY. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns switching speed, gate charge and ruggedness. APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVER
TO-220
T0-220FP
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS

Symbol V DS V DGR V GS ID ID I DM ( ) P tot dv/dt( 1) V ISO Ts tg Tj Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k ) G ate-source Voltage Drain Current (continuous) at Tc = 25 oC Drain Current (continuous) at Tc = 100 o C Drain Current (pulsed) T otal Dissipation at Tc = 25 C Derating Factor Peak Diode Recovery voltage slope Insulation Withstand Voltage (DC) Storage T emperature Max. Operating Junction Temperature
o
Value ST P4NC60 STP4NC60F P 600 600 30 4.2 2.6 16.8 100 0.8 3 -65 to 150 150
( 1) ISD 4.2A, di/dt 200 A/s, VDD V(BR)DSS, Tj TJMAX
Un it V V V 4.2(*) 2.6(*) 16.8 35 0.28 3 2000 A A A W W /o C V/ns V

o o
C C
() Pulse width limited by safe operating area (*) Limited only by maximum temperature allowed
October 1999
1/9
STP4NC60/FP
THERMAL DATA
TO-220 R thj -case Thermal Resistance Junction-case Max 1.25 62.5 0.5 300 TO-220FP 3.57
o o o
C/W C/W C/W o C
Rthj-amb Thermal Resistance Junction-ambient Max R thc-sink Thermal Resistance Case-sink Typ Tl Maximum Lead Temperature F or Soldering Purpose
AVALANCHE CHARACTERISTICS
Symbol IAR E AS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) Single Pulse Avalanche Energy (starting Tj = 25 o C, ID = IAR , V DD = 50 V) Max Value 4.2 160 Unit A mJ
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF

Symbol V (BR)DSS I DSS IGSS Parameter Drain-source Breakdown Voltage Test Conditions I D = 250 A V GS = 0 Min. 600 1 50 100 Typ. Max. Unit V A A nA
V DS = Max Rating Zero Gate Voltage Drain Current (V GS = 0) V DS = Max Rating Gate-body Leakage Current (VDS = 0) V GS = 30 V
T c = 125 oC
ON ()
Symbol V GS(th) R DS(on) I D(o n) Parameter Gate Threshold Voltage V DS = V GS Static Drain-source On Resistance On State Drain Current V GS = 10V Test Conditions ID = 250 A ID = 2 A 4.2 Min. 2 Typ. 3 1.8 Max. 4 2.2 Unit V A
V DS > ID(o n) x R DS(on )ma x V GS = 10 V
DYNAMIC
Symbol g f s ( ) C iss C os s C rss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions V DS > ID(o n) x R DS(on )ma x V DS = 25 V f = 1 MHz ID = 2 A V GS = 0 Min. Typ. 3 700 100 9 Max. Unit S pF pF pF
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STP4NC60/FP
ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON
Symbol t d(on) tr Qg Q gs Q gd Parameter Turn-on Time Rise Time Total G ate Charge Gate-Source Charge Gate-Drain Charge Test Conditions V DD = 300 V I D = 2 A R G = 4.7 V GS = 10 V (see test circuit, figure 3) V DD = 480 V I D = 4.2 A VGS = 10 V Min. Typ. 12 10 18 6 8 25 Max. Unit ns ns nC nC nC
SWITCHING OFF
Symbol tr (Voff) tf tc Parameter Off-voltage Rise T ime Fall T ime Cross-over Time Test Conditions V DD = 480 V I D = 4.2 A R G = 4.7 VGS = 10 V (see test circuit, figure 5) Min. Typ. 8 7 15 Max. Unit ns ns ns
SOURCE DRAIN DIODE

Symbol ISD I SDM ( ) V SD ( ) t rr Q rr I RRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 4.2 A V GS = 0 550 3 11 I SD = 4.2 A di/dt = 100 A/ s o T j = 150 C V DD = 100 V (see test circuit, figure 5) Test Conditions Min. Typ. Max. 4.2 16.8 1.6 Unit A A V ns C A
() Pulsed: Pulse duration = 300 s, duty cycle 1.5 % () Pulse width limited by safe operating area
Safe Operating Area
Safe Operating Area for TO-220FP
3/9
STP4NC60/FP
Thermal Impedance Thermal Impedance for TO-220FP
Output Characteristics
Transfer Characteristics
Transconductance
Static Drain-source On Resistance
4/9
STP4NC60/FP
Gate Charge vs Gate-source Voltage Capacitance Variations
Normalized Gate Threshold Voltage vs Temperature
Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
5/9
STP4NC60/FP
Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuits For Resistive Load
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times
6/9
STP4NC60/FP
TO-220 MECHANICAL DATA

DIM. MIN. A C D D1 E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 DIA. 13.0 2.65 15.25 6.2 3.5 3.75 0.49 0.61 1.14 1.14 4.95 2.4 10.0 16.4 14.0 2.95 15.75 6.6 3.93 3.85 0.511 0.104 0.600 0.244 0.137 0.147
E
mm TYP. MAX. 4.60 1.32 2.72 1.27 0.70 0.88 1.70 1.70 5.15 2.7 10.40 0.019 0.024 0.044 0.044 0.194 0.094 0.393 MIN. 0.173 0.048 0.094 4.40 1.23 2.40
inch TYP. MAX. 0.181 0.051 0.107 0.050 0.027 0.034 0.067 0.067 0.203 0.106 0.409 0.645 0.551 0.116 0.620 0.260 0.154 0.151
D1
L2 F1
G1
Dia. F2 F
L5 L7 L6
L9
L4
H2
P011C
7/9
STP4NC60/FP
TO-220FP MECHANICAL DATA

DIM. MIN. A B D E F F1 F2 G G1 H L2 L3 L4 L6 L7 28.6 9.8 15.9 9 3 4.4 2.5 2.5 0.45 0.75 1.15 1.15 4.95 2.4 10 16 30.6 10.6 16.4 9.3 3.2 1.126 0.385 0.626 0.354 0.118 mm TYP. MAX. 4.6 2.7 2.75 0.7 1 1.7 1.7 5.2 2.7 10.4 MIN. 0.173 0.098 0.098 0.017 0.030 0.045 0.045 0.195 0.094 0.393 0.630 1.204 0.417 0.645 0.366 0.126 inch TYP. MAX. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.204 0.106 0.409
L3 L6 L7 F1 F
G1
F2
1 2 3 L2 L4
8/9
STP4NC60/FP
Information furnished is believed to be accurate and reliable. However, STMicroelect ronics assumes no responsibil ity for the consequences of use of such information nor for any infringement of patents or other rights of third part ies which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectro nics. Specific ation mentioned in this publication are subjec t to change without notice. This publication supersedes and replaces all informat ion previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems with out express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics 1999 STMicroelectronics Printed in Italy All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japa n - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com .
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STP4NC60 STP4NC60FP

N - CHANNEL 600V - 1.8 - 4.2 A TO-220/TO-220FP PowerMESH MOSFET

V DSS 600 V 600 V

R DS(on) <2.2 <2.2

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Un it V V V 4.2(*) 2.6(*) 16.8 35 0.28 3 2000 A A A W W /o C V/ns V

C/W C/W C/W o C

ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF

V DS > ID(o n) x R DS(on )ma x V GS = 10 V

SOURCE DRAIN DIODE

Safe Operating Area

Safe Operating Area for TO-220FP

Static Drain-source On Resistance

Normalized Gate Threshold Voltage vs Temperature

Normalized On Resistance vs Temperature

Source-drain Diode Forward Characteristics

Fig. 3: Switching Times Test Circuits For Resistive Load

Fig. 4: Gate Charge test Circuit

TO-220 MECHANICAL DATA

TO-220FP MECHANICAL DATA

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Un it V V V 4.2() 2.6() 16.8 35 0.28 3 2000 A A A W W /o C V/ns V