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STP2NC60
STP2NC60FP
N-CHANNEL 600V - 7 - 1.9A - TO-220/TO-220FP
PowerMeshII MOSFET
TYPE
STP2NC60
STP2NC60FP

VDSS

RDS(on)

ID

600 V
600 V

<8
<8

1.9 A
1.9 A

TYPICAL RDS(on) = 7
EXTREMELY HIGH dv/dt CAPABILITY
100% AVALANCHE TESTED
NEW HIGH VOLTAGE BENCHMARK
GATE CHARGE MINIMIZED

DESCRIPTION
The PowerMESHII is the evolution of the first
generation of MESH OVERLAY. The layout refinements introduced greatly improve the Ron*area
figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate
charge and ruggedness.

3
1

TO-220

TO-220FP

INTERNAL SCHEMATIC DIAGRAM

APPLICATIONS
HIGH CURRENT, HIGH SPEED SWITCHING
SWITH MODE POWER SUPPLIES (SMPS)
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVER

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value
STP2NC60

VDS
VDGR
VGS
ID
ID
IDM (1)
PTOT

600

Drain-gate Voltage (RGS = 20 k)

600

Gate- source Voltage

30

Drain Current (continuos) at TC = 25C

1.9

1.9 (*)

Drain Current (continuos) at TC = 100C

1.2

1.2 (*)

Drain Current (pulsed)

7.4

7.4 (*)

Total Dissipation at TC = 25C

70

30

0.56

0.24

W/C

dv/dt

Peak Diode Recovery voltage slope

VISO

Insulation Withstand Voltage (DC)

Tstg

Storage Temperature
Max. Operating Junction Temperature

()Pulse width limited by safe operating area

April 2001

STP2NC60FP

Drain-source Voltage (VGS = 0)

Derating Factor

Tj

Unit

3.5
-

V/ns
2000

60 to 150

150

(1)ISD 1.9A, di/dt 100A/s, VDD V (BR)DSS, Tj T JMAX

(*) Limited only by Maximum Temperature Allowed

1/9

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STP2NC60/STP2NC60FP
THERMAL DATA
Rthj-case

Thermal Resistance Junction-case Max

TO-220

TO-220FP

1.76

4.125

C/W

Rthj-amb

Thermal Resistance Junction-ambient Max

62.5

C/W

Rthc-sink

Thermal Resistance Case-sink Typ

0.5

C/W

Maximum Lead Temperature For Soldering Purpose

300

Tl

AVALANCHE CHARACTERISTICS
Symbol

Parameter

Max Value

Unit

IAR

Avalanche Current, Repetitive or Not-Repetitive

(pulse width limited by Tj max)

1.9

EAS

Single Pulse Avalanche Energy

(starting Tj = 25 C, ID = IAR, VDD = 50 V)

80

mJ

ELECTRICAL CHARACTERISTICS (TCASE = 25 C UNLESS OTHERWISE SPECIFIED)

OFF
Symbol

Parameter

Test Conditions

Drain-source
Breakdown Voltage

ID = 250 A, VGS = 0

IDSS

Zero Gate Voltage

Drain Current (VGS = 0)

VDS = Max Rating

IGSS

Gate-body Leakage
Current (VDS = 0)

VGS = 30V

V(BR)DSS

Min.

Typ.

Max.

600

Unit
V

VDS = Max Rating, TC = 125 C

10

100

nA

Max.

Unit

ON (1)
Symbol

Parameter

Test Conditions

VGS(th)

Gate Threshold Voltage

VDS = VGS, ID = 250A

RDS(on)

Static Drain-source On
Resistance

VGS = 10V, ID = 0.7 A

ID(on)

On State Drain Current

VDS > ID(on) x RDS(on)max,

VGS = 10V

Min.
2

Typ.
3

1.9

DYNAMIC
Symbol
gfs (1)

2/9

Parameter
Forward Transconductance

Test Conditions
VDS > ID(on) x RDS(on)max,
ID = 0.7A
VDS = 25V, f = 1 MHz, VGS = 0

Min.

Typ.

Max.

Unit

1.25

160

pF

Ciss

Input Capacitance

Coss

Output Capacitance

26

pF

Crss

Reverse Transfer
Capacitance

3.8

pF

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STP2NC60/STP2NC60FP
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol
td(on)
tr

Parameter
Turn-on Delay Time
Rise Time

Qg

Total Gate Charge

Qgs

Gate-Source Charge

Qgd

Gate-Drain Charge

Test Conditions

Min.

VDD = 300V, ID = 0.7 A

RG = 4.7 VGS = 10V
(see test circuit, Figure 3)
VDD = 480V, ID = 1.4 A,
VGS = 10V

Typ.

Max.

Unit

ns

ns

8.5

11.5

nC

2.8

nC

2.8

nC

SWITCHING OFF
Symbol
tr(Voff)

Parameter
Off-voltage Rise Time

tf

Fall Time

tc

Cross-over Time

Test Conditions

Min.

VDD = 480V, ID = 1.4 A,

RG = 4.7, VGS = 10V
(see test circuit, Figure 5)

Typ.

Max.

Unit

25

ns

ns

34

ns

SOURCE DRAIN DIODE

Symbol
ISD
ISDM (2)
VSD (1)

Parameter

Test Conditions

Min.

Typ.

Source-drain Current
Source-drain Current (pulsed)
Forward On Voltage

ISD = 1.4 A, VGS = 0

trr

Reverse Recovery Time

Qrr

Reverse Recovery Charge

ISD = 1.4 A, di/dt = 100A/s,

VDD = 100V, Tj = 150C
(see test circuit, Figure 5)

IRRM

Reverse Recovery Current

Max.

Unit

1.9

7.4

1.6

500

ns

950

nC

3.8

Note: 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 %.

2. Pulse width limited by safe operating area.

Safe Operating Area for TO-220

Safe Operating Area for TO-220FP

3/9

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STP2NC60/STP2NC60FP
Thermal Impedance for TO-220

Output Characteristics

Transconductance

4/9

Thermal Impedance for TO-220FP

Transfer Characteristics

Static Drain-source On Resistance

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STP2NC60/STP2NC60FP
Gate Charge vs Gate-source Voltage

Capacitance Variations

Normalized Gate Thereshold Voltage vs Temp.

Normalized On Resistance vs Temperature

Source-drain Diode Forward Characteristics

5/9

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STP2NC60/STP2NC60FP
Fig. 1: Unclamped Inductive Load Test Circuit

Fig. 2: Unclamped Inductive Waveform

Fig. 3: Switching Times Test Circuit For

Resistive Load

Fig. 4: Gate Charge test Circuit

Fig. 5: Test Circuit For Inductive Load Switching

And Diode Recovery Times

6/9

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STP2NC60/STP2NC60FP

TO-220 MECHANICAL DATA

mm

DIM.
MIN.

inch

TYP.

MAX.

MIN.

TYP.

MAX.

4.40

4.60

0.173

0.181

1.23

1.32

0.048

0.051

2.40

2.72

0.094

D1

0.107

1.27

0.050

0.49

0.70

0.019

0.027

0.61

0.88

0.024

0.034

F1

1.14

1.70

0.044

0.067

F2

1.14

1.70

0.044

0.067

4.95

5.15

0.194

0.203

G1

2.4

2.7

0.094

0.106

H2

10.0

10.40

0.393

0.409

L2

16.4

0.645

13.0

14.0

0.511

0.551

L5

2.65

2.95

0.104

0.116

L6

15.25

15.75

0.600

0.620

L7

6.2

6.6

0.244

0.260

L9

3.5

3.93

0.137

0.154

DIA.

3.75

3.85

0.147

0.151

D1

L4

H2

G1

F1

L2

F2

Dia.
L5

L9
L7
L6

L4

P011C

7/9

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STP2NC60/STP2NC60FP

TO-220FP MECHANICAL DATA

mm

DIM.
MIN.

inch

TYP.

MAX.

MIN.

TYP.

MAX.

4.4

4.6

0.173

0.181

2.5

2.7

0.098

0.106

2.5

2.75

0.098

0.108

0.45

0.7

0.017

0.027

0.75

0.030

0.039

F1

1.15

1.7

0.045

0.067

F2

1.15

1.7

0.045

0.067

4.95

5.2

0.195

0.204

G1

2.4

2.7

0.094

0.106

10

10.4

0.393

0.409

L2

16

0.630

28.6

30.6

1.126

1.204

L4

9.8

10.6

0.385

0.417

L6

15.9

16.4

0.626

0.645

L7

9.3

0.354

0.366

3.2

0.118

0.126

L3

L3
L6

F2

G1

F1

L7

1 2 3
L2

8/9

L4

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STP2NC60/STP2NC60FP

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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