FQA9N90C

QFET
FQA9N90C
900V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies.

TM

Features
9A, 900V, RDS(on) = 1.4 @VGS = 10 V Low gate charge ( typical 45 nC) Low Crss ( typical 14 pF) Fast switching 100% avalanche tested Improved dv/dt capability

D
!

G!

TO-3P
G DS
FQA Series
!

Absolute Maximum Ratings

Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL

TC = 25C unless otherwise noted

Parameter Drain-Source Voltage - Continuous (TC = 25C) Drain Current - Continuous (TC = 100C) Drain Current - Pulsed
(Note 1)

FQA9N90C 900 9.0 5.7 36.0 30

(Note 2) (Note 1) (Note 1) (Note 3)

Units V A A A V mJ A mJ V/ns W W/C C C

Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25C)

900 9.0 28 4.0 280 2.22 -55 to +150 300

- Derate above 25C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds

Thermal Characteristics
Symbol RJC RCS RJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Thermal Resistance, Junction-to-Ambient Typ -0.24 -Max 0.45 -40 Units C/W C/W C/W

2003 Fairchild Semiconductor Corporation

Rev. A, March 2003

FQA9N90C

Electrical Characteristics
Symbol Parameter

TC = 25C unless otherwise noted

Test Conditions

Min

Typ

Max

Units

Off Characteristics
BVDSS BVDSS / TJ IDSS IGSSF IGSSR Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse VGS = 0 V, ID = 250 A ID = 250 A, Referenced to 25C VDS = 900 V, VGS = 0 V VDS = 720 V, TC = 125C VGS = 30 V, VDS = 0 V VGS = -30 V, VDS = 0 V 900 ------0.99 ------10 100 100 -100 V V/C A A nA nA

On Characteristics
VGS(th) RDS(on) gFS Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance VDS = VGS, ID = 250 A VGS = 10 V, ID = 4.5 A VDS = 50 V, ID = 4.5 A
(Note 4)

3.0 ---

-1.12

5.0 1.4 --

V S

Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz ---2100 175 14 2730 230 18 pF pF pF

Switching Characteristics
td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS = 720 V, ID = 11.0 A, VGS = 10 V
(Note 4, 5)

VDD = 450 V, ID = 11.0 A, RG = 25

(Note 4, 5)

--------

50 120 100 75 45 13 18

110 250 210 160 58 ---

ns ns ns ns nC nC nC

Drain-Source Diode Characteristics and Maximum Ratings

IS ISM VSD trr Qrr Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = 9.0 A Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0 V, IS = 9.0 A, dIF / dt = 100 A/s
(Note 4)

------

---550 6.5

9.0 36.0 1.4 ---

A A V ns C

Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 21mH, IAS = 9.0A, VDD = 50V, RG = 25 , Starting TJ = 25C 3. ISD 9.0A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test : Pulse width 300s, Duty cycle 2% 5. Essentially independent of operating temperature

2003 Fairchild Semiconductor Corporation

Rev. A, March 2003

FQA9N90C

Typical Characteristics

10

VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V Top :

10

150 C

ID, Drain Current [A]

ID, Drain Current [A]

25 C
0

-55 C

10

10

10

-1

Notes : 1. 250 s Pulse Test 2. TC = 25

Notes : 1. VDS = 50V 2. 250 s Pulse Test

10

-1

10

10

10

-1

10

VDS, Drain-Source Voltage [V]

VGS, Gate-Source Voltage [V]

Figure 1. On-Region Characteristics

Figure 2. Transfer Characteristics

3.0

RDS(ON) [ ], Drain-Source On-Resistance

2.5

10

VGS = 10V
2.0

VGS = 20V

IDR, Reverse Drain Current [A]

10

1.5

150

25
Notes : 1. VGS = 0V 2. 250 s Pulse Test

Note : TJ = 25

1.0 0 5 10 15 20 25 30

10

-1

0.2

0.4

0.6

0.8

1.0

1.2

1.4

ID, Drain Current [A]

VSD, Source-Drain voltage [V]

Figure 3. On-Resistance Variation vs Drain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage Variation with Source Current

3500

3000

Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd

12

VDS = 180V
10

VDS = 450V VDS = 720V

VGS, Gate-Source Voltage [V]

2500

Ciss

Capacitance [pF]

2000

Coss
1500
Notes : 1. VGS = 0 V 2. f = 1 MHz

1000

500

Crss

2
Note : ID = 9A

0 -1 10

0 10
0

10

10

20

30

40

50

VDS, Drain-Source Voltage [V]

QG, Total Gate Charge [nC]

Figure 5. Capacitance Characteristics

Figure 6. Gate Charge Characteristics

2003 Fairchild Semiconductor Corporation

Rev. A, March 2003

FQA9N90C

Typical Characteristics

(Continued)

1.2

3.0

2.5

BV DSS , (Norm alized) Drain-Source Breakdown Voltage

RDS(ON) , (Normalized) Drain-Source On-Resistance

1.1

2.0

1.0

1.5

1.0
Notes : 1. VGS = 10 V 2. ID = 4.5 A

0.9

Notes : 1. VGS = 0 V 2. ID = 250 A

0.5

0.8 -100

-50

50

100
o

150

200

0.0 -100

-50

50

100
o

150

200

TJ, Junction Temperature [ C]

TJ, Junction Temperature [ C]

Figure 7. Breakdown Voltage Variation

Figure 8. On-Resistance Variation

10 10
2

Operation in This Area is Limited by R DS(on)

10 s
8

10

100 s

ID, Drain Current [A]

ID, Drain Current [A]

1 ms 10 ms DC

10

10

-1

Notes : 1. TC = 25 C o 2. TJ = 150 C 3. Single Pulse

o

10

-2

10

10

10

10

0 25

50

75

100

125

150

VDS, Drain-Source Voltage [V]

TC, Case Temperature []

Figure 9. Maximum Safe Operating Area

Figure 10. Maximum Drain Current vs Case Temperature

10

(t), T h e rm a l R e s p o n s e

D = 0 .5
N o te s : 1 . Z J C (t) = 0 .4 5 /W M a x . 2 . D u ty F a c to r, D = t 1 /t 2 3 . T J M - T C = P D M * Z J C (t)

10

-1

0 .2 0 .1 0 .0 5 0 .0 2

PDM t1 t2
s in g le p u ls e

JC

10

-2

0 .0 1

10

-5

10

-4

10

-3

10

-2

10

-1

10

10

t 1 , S q u a r e W a v e P u ls e D u r a tio n [s e c ]

Figure 11. Transient Thermal Response Curve

2003 Fairchild Semiconductor Corporation

Rev. A, March 2003

FQA9N90C

Gate Charge Test Circuit & Waveform

50K 12V 200nF 300nF

Same Type as DUT VDS

VGS Qg 10V Qgs Qgd

VGS

DUT
3mA

Charge

Resistive Switching Test Circuit & Waveforms

VDS VGS RG

RL VDD

VDS

90%

10V

DUT

VGS

10%

td(on) t on

tr

td(off) t off

tf

Unclamped Inductive Switching Test Circuit & Waveforms

L VDS ID RG DUT
tp

BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD BVDSS IAS VDD VDD
tp

ID (t) VDS (t) Time

10V

2003 Fairchild Semiconductor Corporation

Rev. A, March 2003

FQA9N90C

Peak Diode Recovery dv/dt Test Circuit & Waveforms

DUT

+ VDS _

I SD L Driver RG
Same Type as DUT

VDD

VGS

dv/dt controlled by RG ISD controlled by pulse period

VGS ( Driver )

Gate Pulse Width D = -------------------------Gate Pulse Period

10V

IFM , Body Diode Forward Current

I SD ( DUT ) IRM

di/dt

Body Diode Reverse Current

VDS ( DUT )

Body Diode Recovery dv/dt

VSD

VDD

Body Diode Forward Voltage Drop

2003 Fairchild Semiconductor Corporation

Rev. A, March 2003

FQA9N90C

Package Dimensions

TO-3P
15.60 0.20 3.80 0.20 13.60 0.20 3.20 0.10 9.60 0.20 4.80 0.20 1.50 0.05
+0.15

12.76 0.20

19.90 0.20

16.50 0.30

3.00 0.20 1.00 0.20

3.50 0.20

2.00 0.20

13.90 0.20

23.40 0.20

18.70 0.20

1.40 0.20

5.45TYP [5.45 0.30]

5.45TYP [5.45 0.30]

0.60 0.05

+0.15

Dimensions in Millimeters
2003 Fairchild Semiconductor Corporation Rev. A, March 2003

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FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems 2. A critical component is any component of a life support which, (a) are intended for surgical implant into the body, device or system whose failure to perform can be or (b) support or sustain life, or (c) whose failure to perform reasonably expected to cause the failure of the life support when properly used in accordance with instructions for use device or system, or to affect its safety or effectiveness. provided in the labeling, can be reasonably expected to result in significant injury to the user.

PRODUCT STATUS DEFINITIONS Definition of Terms

Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.

Preliminary

No Identification Needed

Full Production

Obsolete

Not In Production

2003 Fairchild Semiconductor Corporation

Rev. I2