STP6NA80 STP6NA80FI

N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR

TYPE STP6NA80 STP6NA80FI
I I I I I I I

V DSS 800 V 800 V

R DS( on) < 1.9 < 1.9

ID 5.7 A 3.4 A

TYPICAL RDS(on) = 1.68 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW INTRINSIC CAPACITANCES GATE GHARGE MINIMIZED REDUCED THRESHOLD VOLTAGE SPREAD TO-220

3 1 2 1 2

DESCRIPTION This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance. APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING I SWITCH MODE POWER SUPPLIES (SMPS) I DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE
I

ISOWATT220

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter STP6NA80 VD S V DG R V GS ID ID ID M( ) P tot V ISO T stg Tj Drain-source Voltage (V GS = 0) Drain-gate Voltage (RG S = 20 k ) Gate-source Voltage Drain Current (continuous) at T c = 25 C Drain Current (continuous) at T c = 100 oC Drain Current (pulsed) Total Dissipation at Tc = 25 C Derating Factor Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature
o o

Value STP6NA80FI 800 800 30 5.7 3.6 23 125 1 -65 to 150 150 3.4 2.1 23 45 0.36 2000

Unit

V V V A A A W W/o C V
o o

C C

() Pulse width limited by safe operating area

November 1996

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THERMAL DATA
TO-220 R thj-cas e Rthj- amb Rt hc- sin k Tl Thermal Resistance Junction-case Max 1 62.5 0.5 300 ISOWATT220 2.78
o o o

C/W C/W C/W o C

Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose

AVALANCHE CHARACTERISTICS
Symbol IA R E AS E AR IA R Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by T j max, < 1%) Single Pulse Avalanche Energy (starting T j = 25 o C, ID = I AR, VD D = 50 V) Repetitive Avalanche Energy (pulse width limited by T j max, < 1%) Avalanche Current, Repetitive or Not-Repetitive (T c = 100 o C, pulse width limited by T j max, < 1%)
o

Max Value 5.7 165 6.5 3.6

Unit A mJ mJ A

ELECTRICAL CHARACTERISTICS (Tcase = 25 C unless otherwise specified) OFF

Symbol V( BR)DSS I DS S IG SS Parameter Drain-source Breakdown Voltage Test Conditions I D = 250 A VG S = 0 Min. 800 25 250 100 Typ. Max. Unit V A A nA

Zero Gate Voltage V DS = Max Rating Drain Current (V GS = 0) V DS = Max Rating x 0.8 Gate-body Leakage Current (V D S = 0) V GS = 30 V

T c = 125 oC

ON ( )
Symbol V G S(th) R DS( on) I D( on) Parameter Gate Threshold Voltage V DS = V GS Static Drain-source On Resistance On State Drain Current V GS = 10V Test Conditions ID = 250 A ID = 3 A 6 Min. 2.25 Typ. 3 1.68 Max. 3.75 1.9 Unit V A

V DS > ID( on) x RD S(on) max V GS = 10 V

DYNAMIC
Symbol gfs ( ) C iss C oss C rss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions V DS > ID( on) x RD S(on) max V DS = 25 V f = 1 MHz ID = 3 A VG S = 0 Min. 4 Typ. 6.1 1330 160 40 1750 210 55 Max. Unit S pF pF pF

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ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON
Symbol t d(on) tr (di/dt) on Parameter Turn-on Time Rise Time Turn-on Current Slope Test Conditions V DD = 400 V I D = 3 A VGS = 10 V R G = 47 (see test circuit, figure 3) V DD = 640 V I D = 6 A VGS = 10 V R G = 47 (see test circuit, figure 5) V DD = 640 V ID = 6 A V GS = 10 V Min. Typ. 35 95 170 Max. 45 125 Unit ns ns A/ s

Qg Q gs Q gd

Total Gate Charge Gate-Source Charge Gate-Drain Charge

58 8 27

78

nC nC nC

SWITCHING OFF
Symbol t r(Vof f) tf tc Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Conditions V DD = 640 V I D = 6 A R G = 47 VGS = 10 V (see test circuit, figure 5) Min. Typ. 90 25 125 Max. 120 35 165 Unit ns ns ns

SOURCE DRAIN DIODE

Symbol IS D I SDM( ) VS D ( ) t rr Q rr I RRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 6 A V GS = 0 850 15 35 I SD = 6 A di/dt = 100 A/ s V DD = 100 V T j = 150 o C (see test circuit, figure 5) Test Conditions Min. Typ. Max. 5.7 23 1.6 Unit A A V ns C A

() Pulsed: Pulse duration = 300 s, duty cycle 1.5 % () Pulse width limited by safe operating area

Safe Operating Areas for TO-220

Safe Operating Areas for ISOWATT220

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Thermal Impedeance For TO-220

Thermal Impedance For ISOWATT220

Derating Curve For TO-220

Derating Curve For ISOWATT220

Output Characteristics

Transfer Characteristics

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Transconductance

Static Drain-source On Resistance

Gate Charge vs Gate-source Voltage

Capacitance Variations

Normalized Gate Threshold Voltage vs Temperature

Normalized On Resistance vs Temperature

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Turn-on Current Slope

Turn-off Drain-source Voltage Slope

Cross-over Time

Switching Safe Operating Area

Accidental Overload Area

Source-drain Diode Forward Characteristics

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Fig. 1: Unclamped Inductive Load Test Circuits

Fig. 2: Unclamped Inductive Waveforms

Fig. 3: Switching Times Test Circuits For Resistive Load

Fig. 4: Gate Charge Test Circuit

Fig. 5: Test Circuit For Inductive Load Switching And Diode Reverse Recovery Time

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TO-220 MECHANICAL DATA

DIM. MIN. A C D D1 E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 DIA. 13.0 2.65 15.25 6.2 3.5 3.75 0.49 0.61 1.14 1.14 4.95 2.4 10.0 16.4 14.0 2.95 15.75 6.6 3.93 3.85 0.511 0.104 0.600 0.244 0.137 0.147 4.40 1.23 2.40 1.27 0.70 0.88 1.70 1.70 5.15 2.7 10.40 0.019 0.024 0.044 0.044 0.194 0.094 0.393 0.645 0.551 0.116 0.620 0.260 0.154 0.151 mm TYP. MAX. 4.60 1.32 2.72 MIN. 0.173 0.048 0.094 0.050 0.027 0.034 0.067 0.067 0.203 0.106 0.409 inch TYP. MAX. 0.181 0.051 0.107

D1

L2 F1

G1

Dia. F2 F

L5 L7 L6

L9

L4

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H2

P011C

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ISOWATT220 MECHANICAL DATA

DIM. MIN. A B D E F F1 F2 G G1 H L2 L3 L4 L6 L7 28.6 9.8 15.9 9 3 4.4 2.5 2.5 0.4 0.75 1.15 1.15 4.95 2.4 10 16 30.6 10.6 16.4 9.3 3.2 1.126 0.385 0.626 0.354 0.118 mm TYP. MAX. 4.6 2.7 2.75 0.7 1 1.7 1.7 5.2 2.7 10.4 MIN. 0.173 0.098 0.098 0.015 0.030 0.045 0.045 0.195 0.094 0.393 0.630 1.204 0.417 0.645 0.366 0.126 inch TYP. MAX. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.204 0.106 0.409

L3 L6 L7

F1

G1

F2

1 2 3 L2 L4

P011G

G
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Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequ ences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical compone nts in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. 1996 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A .

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