Buz 10
Buz 10
T YPE BUZ 10
s s s s s
V DSS 50 V
ID 23 A
TYPICAL RDS(on) = 0.06 AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED HIGH CURRENT CAPABILITY 175oC OPERATING TEMPERATURE
3 1 2
APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING s SOLENOID AND RELAY DRIVERS s REGULATORS s DC-DC & DC-AC CONVERTERS s MOTOR CONTROL, AUDIO AMPLIFIERS s AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.)
s
TO-220
Un it V V V A A W
o o
C C
February 2000
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THERMAL DATA
R thj -case R thj -amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 2.0 62.5
o o
C/W C/W
AVALANCHE CHARACTERISTICS
Symbo l IAR E AS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max, < 1%) Single Pulse Avalanche Energy (starting Tj = 25 o C, ID = IAR , V DD = 30 V) Valu e 10 150 Unit A mJ
V DS = Max Rating Zero Gate Voltage Drain Current (V GS = 0) V DS = Max Rating Gate-body Leakage Current (VDS = 0) V GS = 20 V
Tj = 125 oC
ON ()
Symbo l V GS(th) R DS(on) Parameter Gate Threshold Voltage V DS = V GS Static Drain-source On Resistance V GS = 10V Test Con ditions ID = 1 mA ID = 14 A Min. 2.1 Typ. 3 0.06 Max. 4 0.07 Unit V
DYNAMIC
Symbo l g f s () C iss C os s C rss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Con ditions V DS = 25 V V DS = 25 V I D = 14 A f = 1 MHz V GS = 0 Min. 6 Typ. 11 900 130 40 Max. Unit S pF pF pF
SWITCHING
Symbo l t d(on) tr t d(of f) tf Parameter Turn-on Time Rise Time Turn-off Delay T ime Fall T ime Test Con ditions V DD = 30 V R GS = 4.7 ID = 10 A V GS = 10 V Min. Typ. 20 45 48 10 Max. Unit ns ns ns ns
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ELECTRICAL CHARACTERISTICS (continued) SOURCE DRAIN DIODE
Symbo l ISD I SDM V SD () t rr Q rr Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge I SD = 46 A V GS = 0 50 0.17 I SD = 23 A di/dt = 100 A/s V DD = 30 V T j = 150 o C Test Con ditions Min. Typ. Max. 23 92 1.9 Unit A A V ns C
Thermal Impedance
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Output Characteristics Transfer Characteristics
Transconductance
Capacitance Variations
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Normalized Gate Threshold Voltage vs Temperature Normalized On Resistance vs Temperature
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Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform
Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times
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mm TYP. MAX. 4.60 1.32 2.72 1.27 0.70 0.88 1.70 1.70 5.15 2.7 10.40 0.019 0.024 0.044 0.044 0.194 0.094 0.393 MIN. 0.173 0.048 0.094 4.40 1.23 2.40
inch TYP. MAX. 0.181 0.051 0.107 0.050 0.027 0.034 0.067 0.067 0.203 0.106 0.409 0.645 0.551 0.116 0.620 0.260 0.154 0.151
D1
L2 F1
G1
Dia. F2 F
L5 L7 L6
L9
L4
H2
P011C
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