STV160NF03L

N-CHANNEL 30V - 0.0019 - 160A PowerSO-10 STripFET POWER MOSFET

TYPE STV160NF03L
s s s s s s s

VDSS 30 V

RDS(on) < 0.0028

ID 160 A
10

) s ( t c u d o ) r s ( P t c e t u e d l o o r s P b e O t e l ) o s ( s t b c u O d o ) r s P ( t c e t u e l d o o r s P b O e t e l o s b O
1

TYPICAL RDS(on) = 0.0019 LOW THRESHOLD DRIVE ULTRA LOW ON-RESISTANCE ULTRA FAST SWITCHING 100% AVALANCHE TESTED VERY LOW GATE CHARGE LOW PROFILE, VERY LOW PARASITIC INDUCTANCE PowerSO-10 PACKAGE

PowerSO-10

INTERNAL SCHEMATIC DIAGRAM

DESCRIPTION The STV160NF03L represents the second generation of Application Specific STMicroelectronics well established STripFET process based on a very unique strip layout design. The resulting MOSFET shows unrivalled high packing density with ultra low on-resistance and superior switching charactestics. Process simplification also translates into improved manufacturing reproducibility. This device is particularly suitable for high current, low voltage switching application where efficiency is crucial APPLICATIONS s BUCK CONVERTERS IN HIGH PERFORMANCE TELECOM AND VRMs DCDC CONVERTERS ABSOLUTE MAXIMUM RATINGS
Symbol VDS VDGR VGS ID ID(**)

CONNECTION DIAGRAM (TOP VIEW)

Parameter

Value 30

Unit V V V

Drain-source Voltage (VGS = 0)

Drain-gate Voltage (RGS = 20 k) Gate- source Voltage

30

15 160 113

Drain Current (continuos) at TC = 25C

Drain Current (continuos) at TC = 100C Drain Current (pulsed) Total Dissipation at TC = 25C Derating Factor Single Pulse Avalanche Energy Storage Temperature Max. Operating Junction Temperature

A A

IDM ( ) PTOT

640

210 1.4 1 65 to 175 175

(1) Starting Tj=25C , ID = 80A, VDD = 20V (**)Limited only maximum junction temperature allowed by PowerSO-10

W W/C J C C

EAS (1) Tstg Tj

(q ) Pulse width limited by safe operating area

November 2002

1/9

STV160NF03L
THERMAL DATA
Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Maximum Lead Temperature For Soldering Purpose 0.71 50 300 C/W C/W C

ELECTRICAL CHARACTERISTICS (TCASE = 25 C UNLESS OTHERWISE SPECIFIED) OFF

Symbol V(BR)DSS IDSS IGSS Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Test Conditions ID = 250 A, VGS = 0 VDS = Max Rating VDS = Max Rating, TC = 125 C VGS = 15 V Min. 30 1 Typ. Max. Unit V

ON (1)
Symbol VGS(th) RDS(on) Parameter Gate Threshold Voltage Static Drain-source On Resistance Test Conditions VDS = VGS, ID = 250A

ID(on)

On State Drain Current

DYNAMIC
Symbol gfs (1) Rg

o s b
Ciss Coss Crss Ciss Coss Crss LS

let

Forward Transconductance

r P e

u d o

s ( t c

VGS = 10 V, ID = 80 A VGS = 10 V, ID = 45 A VGS = 8 V, ID = 80 A VGS = 5 V, ID = 40 A VGS = 10 V, ID=80 A;Tj = 175 C VGS = 8 V, ID=80 A; Tj = 175 C VGS = 5 V, ID=40 A; Tj = 175 C

O )

o s b

e t e l

Min. 1

o r P

du

100

ct
10 2.8 2.8 3.8 6.7 6.4 7.8 12.8

(s)

A nA

Typ. 1.9 1.86 2 4

VDS > ID(on) x RDS(on)max, VGS = 10V

Parameter

Gate resistance

s b O
LD

t e l o

Input Capacitance Output Capacitance Reverse Transfer Capacitance Input Capacitance Output Capacitance Reverse Transfer Capacitance Internal Source Inductance

r P e

u d o

) s ( ct

o s b O Test Conditions

e t le

Pr

od

uc

Max.

) s t(

Unit V m m m m m m m A

160

Min.

Typ. 210 0.5 4700 1580 240 6500 9500 4000 4

Max.

Unit S pF pF pF pF pF pF nH

VDS > ID(on) x RDS(on)max, ID = 80 A VDS = 0 V, f = 1 MHz, VGS = 0 VDS = 25 V, f = 1 MHz, VGS = 0

VDS = 0 V, f = 1 MHz, VGS = 0

From the Lead End (6mm from Package Body) to the Die Center

Internal Drain Inductance

Not Available on Surface Mounting Package

2/9

STV160NF03L
ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON
Symbol td(on) tr Qg Qgs Qgd Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions VDD = 15 V, ID = 80 A RG = 4.7 VGS = 10V (see test circuit, Figure 3) VDD = 24 V, ID = 160 A, VGS = 10 V Min. Typ. 30 380 103 21 38 140 Max. Unit ns ns nC nC nC

) s ( t c u d o ) r s ( P t c e t u e d l o o r s P b e O t e l ) o s ( s t b c u O d o ) r s P ( t c e t u e l d o o r s P b O e t e l o s b O
SWITCHING OFF
Symbol td(off) tf Parameter Test Conditions Min. Typ. 80 170 75 25 90 125 Max. Turn-off-Delay Time Fall Time VDD = 15 V, ID = 80 A, RG = 4.7, VGS = 10 V (see test circuit, Figure 5) Vclamp = 24 V, ID = 40 A RG = 4.7, VGS = 10V td(off) tr(Voff) tf tc Turn-off Delay Time Off-voltage Rise Time Fall Time Cross-over Time

Unit ns ns ns ns ns ns

SOURCE DRAIN DIODE

Symbol ISD ISDM (1) VSD (2) trr

Parameter

Test Conditions

Min.

Typ.

Max. 160

Unit A

Source-drain Current

Source-drain Current (pulsed) Forward On Voltage

640 1.5

ISD = 160 A, VGS = 0

Reverse Recovery Time

ISD = 80 A, di/dt = 100A/s, VDD = 15V, Tj = 25C (see test circuit, Figure 5)

80

ns

Qrr

Reverse Recovery Charge

180 4.5

nC A

IRRM

Reverse Recovery Current

Note: 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 %. 2. Pulse width limited by safe operating area.

Safe Operating Area

Thermal Impedance

3/9

STV160NF03L
Output Characteristics Tranfer Characteristics

) s ( t c u d o ) r s ( P t c e t u e d l o o r s P b e O t e l ) o s ( s t b c u O d o ) r s P ( t c e t u e l d o o r s P b O e t e l o s b O
Tranconductance Static Drain-Source On Resistance Gate Charge vs Gate-source Voltage Capacitance Variations

4/9

STV160NF03L
Normalized Gate Thereshold Voltage vs Temp. Normalized On Resistance vs Temperature

) s ( t c u d o ) r s ( P t c e t u e d l o o r s P b e O t e l ) o s ( s t b c u O d o ) r s P ( t c e t u e l d o o r s P b O e t e l o s b O
Source-drain Diode Forward Characteristics Basic Schematic For Motherboard VRM Whith Synchronous Rectification Basic Schematic Mosfets Switch Used In Secondary Side Of a Froward Convert

5/9

STV160NF03L

) s ( t c u d o ) r s ( P t c e t u e d l o o r s P b e O t e l ) o s ( s t b c u O d o ) r s P ( t c e t u e l d o o r s P b O e t e l o s b O

6/9

STV160NF03L
Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform

) s ( t c u d o ) r s ( P t c e t u e d l o o r s P b e O t e l ) o s ( s t b c u O d o ) r s P ( t c e t u e l d o o r s P b O e t e l o s b O
Fig. 3: Switching Times Test Circuit For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times

7/9

STV160NF03L

PowerSO-10 MECHANICAL DATA

DIM. MIN. A A1 B C D e 3.35 0.00 0.40 0.35 9.40 mm TYP. MAX. 3.65 0.10 0.60 0.55 9.60 7.60 MIN. 0.132 0.000 0.016 0.013 0.370 0.291 inch TYP. MAX. 0.144 0.004 0.024 0.022 0.378 0.300

) s ( t c u d o ) r s ( P t c e t u e d l o o r s P b e O t e l ) o s ( s t b c u O d o ) r s P ( t c e t u e l d o o r s P b O e t e l o s b O
D1 E 7.40 1.27 0.050 9.30 9.50 0.366 0.374 E1 E2 E3 E4 F h L q 7.20 7.20 6.10 5.90 1.25 7.40 7.60 6.35 6.10 1.35 0.283 0.283 0.240 0.232 0.049 0.291 0.300 0.250 0.240 0.053 0.50 0.002 H 13.80 1.20 0o 14.40 1.80 8o 0.543 0.567 0.047 0.071 1.70 0.067
B 0.10 A B

10

E2

E3

E1

SEATING PLANE

DETAIL "A"

0.25

= D1 = =

A1

= =

= =

= =

E4

SEATING PLANE

A1

L DETAIL "A"

0068039-C

8/9

STV160NF03L

) s ( t c u d o ) r s ( P t c e t u e d l o o r s P b e O t e l ) o s ( s t b c u O d o ) r s P ( t c e t u e l d o o r s P b O e t e l o s b O
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics 2002 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com

9/9

Mouser Electronics
Authorized Distributor

Click to View Pricing, Inventory, Delivery & Lifecycle Information:

STMicroelectronics:
STV160NF03LT4