MBQ40T120FES 1200V FieldStop Trench IGBT Datasheet

MBQ40T120FES
High speed FieldStop Trench IGBT

General Description Features

This IGBT is produced using advanced MagnaChip’s Field  High Speed Switching & Low Power Loss
Stop Trench IGBT Technology, which provides low VCE(SAT),  VCE(sat) = 2.0V @ IC = 40A
high switching performance and excellent quality.  High Input Impedance
 trr = 100ns (typ.)
This device is for PFC, UPS & Inverter applications.  Ultra Soft, fast recovery anti-parallel diode
Applications  Ultra narrowed VF distribution control
 Positive Temperature coefficient for easy paralleling
 PFC
 UPS
 Inverter

TO-247

G
C
E

Absolute Maximum Ratings

Characteristics Symbol Rating Unit
Collector-emitter voltage VCES 1200 V
Gate-emitter voltage VGES ±20 V
TC=25°C 80 A
Collector current IC
TC=100°C 40 A
Pulsed collector current, pulse time limited by Tjmax ICM 160 A
Diode forward current @ TC = 100°C IF 40 A
Diode pulsed current, Pulse time limited by Tjmax IFM 160 A
TC=25°C 357 W
Power dissipation PD
TC=100°C 142 W
Short circuit withstand time
VCE = 600V, VGE = 15V, TC = 150°C
Allowed number of short circuit < 1000 tsc 10 μs
Time between short circuits ≥ 1.0s
Operating Junction and storage temperature range TJ, Tstg -55~150 °C

Thermal Characteristics
Characteristics Symbol Rating Unit
Thermal resistance junction-to-ambient RθJA 40
Thermal resistance junction-to-case for IGBT RθJC 0.35 °C/W
Thermal resistance junction-to-case for Diode RθJC 0.8

Jun. 2015 Revision 0.0 1 MagnaChip Semiconductor Ltd.

 MBQ40T120FES 1200V FieldStop Trench IGBT Datasheet
Ordering Information
Part Number Marking Temp. Range Package Packing RoHS Status
MBQ40T120FESTH 40T120FES -55~150°C TO-247 Tube Pb Free

Electrical Characteristics (Tc =25oC unless otherwise specified)

Characteristics Symbol Test Condition Min Typ Max Unit

Static Characteristics
Collector-emitter breakdown voltage BVCES IC = 1mA, VGE = 0V 1200 - - V
Gate-emitter threshold voltage VGE(th) VCE = VGE, IC = 1mA 4.5 5.5 6.5 V
Zero gate voltage collector current ICES VCE = 1200V, VGE = 0V - - 1 mA
Gate-emitter leakage current IGES VGE = 20V, VCE = 0V - - ±250 nA
IC = 40A, VGE = 15V,
2.0 2.4
TC = 25°C
Collector-emitter saturation voltage VCE(sat) V
IC = 40A, VGE = 15V,
2.45
TC = 150°C
Dynamic and Switching Characteristics
Total gate charge Qg - 341
VCE = 600V, IC = 40A,
Gate-emitter charge Qge - 52 nC
VGE = 15V
Gate-collector charge Qgc - 126
Input capacitance Cies - 6030 -
VCE = 30V, VGE = 0V,
Reverse transfer capacitance Cres - 107 - pF
f = 1MHz
Output capacitance Coes - 206 -
Turn-on delay time td(on) 65
Rise time tr 55
ns
Turn-off delay time td(off) VGE = 15V, VCC = 600V, 308
,
Fall time tf IC = 40A, RG = 10Ω 40
Turn-on switching energy Eon Inductive Load, TC = 25°C 1.96
Turn-off switching energy Eoff 0.54 mJ
Total switching energy Ets 2.50
Turn-on delay time td(on) 70
Rise time tr 62
ns
Turn-off delay time td(off) VGE = 15V, VCC = 600V, 325
,
Fall time tf IC = 40A, RG = 10Ω 62
Turn-on switching energy Eon Inductive Load, TC = 150°C 2.35
Turn-off switching energy Eoff 1.61 mJ
Total switching energy Ets 3.96

o
Diode Characteristics (Tc =25 C unless otherwise specified)
IF = 40A, TC = 25°C - 2.4 3.0
Forward voltage VF V
IF = 40A, TC = 150°C - 2.45
Reverse recovery time trr - 100 - ns
IF = 40A, di/dt = 200A/ μs,
Reverse recovery current Irr - 7 - A
TC = 25°C
Reverse recovery charge Qrr - 350 - nC
Reverse recovery time trr - 180 - ns
Reverse recovery current Irr IF = 40A, di/dt = 200A/ μs, - 10 - A
TC = 150°C
Reverse recovery charge Qrr - 900 - nC

Jun. 2015 Revision 0.0 2 MagnaChip Semiconductor Ltd.

 MBQ40T120FES 1200V FieldStop Trench IGBT Datasheet
160
TC = 25C 20V 12.0V 150
15V
Common Emitter
140 VGE = 15V
TC = 25C
TC = 150C
120
120
Collector Current, IC [A]

Collector Current, IC [A]

100
90

80

10.0V
60 60

40

VGE = 8V
30
20

0
0 1 2 3 4 5 6 0
0 1 2 3 4 5
Collector-Emitter Voltage VCE [V]
Collector-Emitter Voltage, VCE [V]

Fig.1 Typical Output Characteristics Fig.2 Typical Collector-Emitter Saturation Voltage

120 3.5
VCE = 20V Common Emitter
TC = 25C VGE = 15V
Collector-Emitter Voltage, VCE [V]

100
TC = 150C 80A
3.0
Collector Current, IC [A]

80
2.5

60
40A
2.0
40

20A
1.5
20

0 1.0
0 4 8 12 25 50 75 100 125 150

Gate-Emitter Voltage VGE [V] Case Temperature, TC [C]

Fig.4 Typical Collector-Emitter Saturation

Fig.3 Typical Transfer Characteristics
Voltage at Case Temperature
300 30
TC =25℃ TC = 25C
TC = 150℃ TC = 150C
Short Circuit Collector current, IC(SC) [A]

Short Circuit Withstand Time, tSC [? ]

25

250

20

200 15

10

150

100 0
12 14 16 18 12 13 14 15 16 17 18

Gate-Emitter Voltage, VGE [V] Gate-Emitter Voltage, VGE [V]

Fig.5 Typical Short Circuit Collector Current Fig.6 Typical Short Circuit Withstand Time

Jun. 2015 Revision 0.0 3 MagnaChip Semiconductor Ltd.

 MBQ40T120FES 1200V FieldStop Trench IGBT Datasheet
10000 16
VGE = 0V VCC = 200V
Cies f = 1MHz 14 VCC = 600V
TC =25C
8000

Gate-Emitter Voltage, VGE, [V]

12
Capacitance [pF]

10
6000

4000
6

Coes 4
2000

2
Cres
0 0
0 5 10 15 20 25 30 0 50 100 150 200 250 300 350
Collector-Emitter Voltage, VCE [V] Total Gate Charge, QG [nC]

Fig.7 Typical Capacitance Fig.8 Typical Gate Charge

10
Common Emitter
VCC = 600V, VGE = 15V
IC = 40A
TC = 25C
TC = 150C td(on)
Eon
Switching Loss [mJ]

Switching Time [nS]

tr
Eoff 100

1
Common Emitter
VCC = 600V, VGE = 15V
IC = 40A
TC = 25C
TC = 150C

10
0 10 20 30 40 50 60 70 0 10 20 30 40 50 60 70
Gate Resistance, RG [ohm] Gate Resistance, RG [ohm]

Fig.9 Switching Loss-Gate Resistance Fig.10 Turn on Characteristics-Gate Resistance

3.5

1000
3.0

td(off)
2.5
Switching Time [nS]

Switching Loss [mJ]

Common Emitter Eon

VCC = 600V, VGE = 15V
IC = 40A
TC = 25C
2.0
TC = 150C
100
1.5

tf
1.0
Eoff
Common Emitter
VCC = 600V, VGE = 15V
0.5
IC = 40A
RG = 10ohm

10 0.0
0 10 20 30 40 50 60 70 25 50 75 100 125 150

Gate Resistance, R G [ohm] Case Temperature, TC [C]

Fig.11 Turn off Characteristics-Gate Resistance Fig.12 Switching Loss-Case Temperature

Jun. 2015 Revision 0.0 4 MagnaChip Semiconductor Ltd.

 MBQ40T120FES 1200V FieldStop Trench IGBT Datasheet
5

Common Emitter
Common Emitter VGE = 15V
VCC = 600V RG = 10ohm
VGE = 15V TC = 25C
4 RG = 10ohm 100 TC = 150C
TC = 150C
Switching Loss [mJ]

Switching Time [nS]

td(on)

Eon tr
3

2
Eoff

1 10
20 30 40 50 60 20 30 40 50 60
Collector Current, I C [A] Collector Current, I C [A]

Fig.13 Switching Loss-Collector Current Fig.14 Typical Turn on-Collector Current

100

TC = 25C
TC = 150C
td(off)
Forward Current, IF [A]
Switching Time [nS]

10

100

tf
1

Common Emitter
VGE = 15V
RG = 10ohm
TC = 25C
TC = 150C

10 0.1
20 30 40 50 60 0 1 2 3 4

Collector Current, I C [A] Forward Voltage, VF [V]

Fig.15 Typical Turn off-Collector Current Fig.16 Diode Forward Characteristics

TC = 25C
TC = 150C 100
Reverse Recovery Time, trr [ns]

50us
Collector Current,IC, [A]

100us

10 200us

di/dt=200A/us 500us

di/dt=100A/us 1

DC
di/dt=200A/us
100
0.1
di/dt=100A/us
1 10 100 1000
20 30 40 50 60

Forward Current, IF [A] Collector-Emitter Voltage,VCE [V]

Fig.17 Typical Turn off-Collector Current Fig.18 Forward Bias Safe Operating Area

Jun. 2015 Revision 0.0 5 MagnaChip Semiconductor Ltd.

 MBQ40T120FES 1200V FieldStop Trench IGBT Datasheet
Triangle

150
100

IC Collector Current [A]

Collector Current,IC, [A]

Rectangle
100

10

50

VGE = 15V, TC = 150℃

1 0
1 10 100 1000 1 10 100 1000
Collector-Emitter Voltage,VCE [V] Switching Frequency [kHz]

Fig.19 Reverse Bias Safe Operating Area Fig.20 Switching frequency – Collector current

90

80
D=0.9
Thermal Response [Z th-JC ]

70 0.5
Collector Current, IC [A]

-1
10
60

50
0.1
40
0.05
-2
30 10
0.02
20
0.01 Notes :
Duty Factor, D=t1/t2
10
PEAK TJ = PDM * Z? JC* R? JC(t) + TC

-3
0 10
25 50 75 100 125 150 -6 -5 -4 -3 -2 -1 0
10 1x10 1x10 10 10 10 10
Case Temperature, TC [C] Rectangular Pulse width [sec]

Fig.21 Case Temperature – Collector Current Fig.22 IGBT Transient Thermal Impedance

Jun. 2015 Revision 0.0 6 MagnaChip Semiconductor Ltd.

 MBQ40T120FES 1200V FieldStop Trench IGBT Datasheet
Physical Dimension

TO-247
Dimensions are in millimeters, unless otherwise specified

ΦP
E A
A2

Q
S

D1
E2
D
L1

b2
b1
L

b E1

e c A1

Dimension Min(mm) Max(mm)

A 4.70 5.31
A1 2.20 2.60
A2 1.50 2.49
b 0.99 1.40
b1 2.59 3.43
b2 1.65 2.39
c 0.38 0.89
D 20.30 21.46
D1 13.08 -
E 15.45 16.26
E1 13.06 14.02
E2 4.32 5.49
e 5.45BSC
L 19.81 20.57
L1 - 4.50
ΦP 3.50 3.70
Q 5.38 6.20
S 6.15BSC

Jun. 2015 Revision 0.0 7 MagnaChip Semiconductor Ltd.

 MBQ40T120FES 1200V FieldStop Trench IGBT Datasheet

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The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power
generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be
expected to result in a personal injury. Seller’s customers using or selling Seller’s products for use in such
applications do so at their own risk and agree to fully defend and indemnify Seller.

MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility
for use of any circuitry other than circuitry entirely included in a MagnaChip product. is a registered trademark of MagnaChip
Semiconductor Ltd.

Jun. 2015 Revision 0.0 8 MagnaChip Semiconductor Ltd.