GD50PIY120C6S IGBT Module

STARPOWER
SEMICONDUCTOR IGBT

GD50PIY120C6S
1200V/50A PIM in one-package

General Description
STARPOWER IGBT Power Module provides ultra
low conduction loss as well as short circuit ruggedness.
They are designed for the applications such as
general inverters and UPS.

Features
 Low VCE(sat) Trench IGBT technology
 10μs short circuit capability
 VCE(sat) with positive temperature coefficient
 Maximum junction temperature 175oC
 Low inductance case
 Fast & soft reverse recovery anti-parallel FWD
 Isolated copper baseplate using DBC technology

Typical Applications
 Inverter for motor drive
 AC and DC servo drive amplifier
 Uninterruptible power supply

Equivalent Circuit Schematic

©2016 STARPOWER Semiconductor Ltd. 1/22/2016 1/13 SN0A

GD50PIY120C6S IGBT Module

Absolute Maximum Ratings TC=25oC unless otherwise noted

IGBT-inverter
Symbol Description Value Unit
VCES Collector-Emitter Voltage 1200 V
VGES Gate-Emitter Voltage ±20 V
Collector Current @ TC=25oC 85
IC A
@ TC=100oC 50
ICM Pulsed Collector Current tp=1ms 100 A
PD Maximum Power Dissipation @ Tj=175oC 292 W

Diode-inverter
Symbol Description Value Unit
VRRM Repetitive Peak Reverse Voltage 1200 V
IF Diode Continuous Forward Current 50 A
IFM Diode Maximum Forward Current tp=1ms 100 A

Diode-rectifier
Symbol Description Value Unit
VRRM Repetitive Peak Reverse Voltage 1600 V
IO Average Output Current 50Hz/60Hz,sine wave 50 A
IFSM Surge Forward Current VR=0V,tp=10ms,Tj=45oC 850 A
I2t I2t-value,VR=0V,tp=10ms,Tj=45oC 3610 A2s

IGBT-brake
Symbol Description Value Unit
VCES Collector-Emitter Voltage 1200 V
VGES Gate-Emitter Voltage ±20 V
Collector Current @ TC=25oC 62
IC A
@ TC=100oC 35
ICM Pulsed Collector Current tp=1ms 70 A
PD Maximum Power Dissipation @ Tj=175oC 218 W

Diode-brake
Symbol Description Value Unit
VRRM Repetitive Peak Reverse Voltage 1200 V
IF Diode Continuous Forward Current 25 A
IFM Diode Maximum Forward Current tp=1ms 50 A

Module
Symbol Description Value Unit
Maximum Junction Temperature(inverter,brake) 175 o
Tjmax C
Maximum Junction Temperature (rectifier) 150
o
Tjop Operating Junction Temperature -40 to +150 C
o
TSTG Storage Temperature Range -40 to +125 C
VISO Isolation Voltage RMS,f=50Hz,t=1min 2500 V

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GD50PIY120C6S IGBT Module

IGBT-inverter Characteristics TC=25oC unless otherwise noted

Symbol Parameter Test Conditions Min. Typ. Max. Unit
IC=50A,VGE=15V,
1.70 2.15
Tj=25oC
Collector to Emitter IC=50A,VGE=15V,
VCE(sat) 1.95 V
Saturation Voltage Tj=125oC
IC=50A,VGE=15V,
2.00
Tj=150oC
Gate-Emitter Threshold IC=1.25mA,VCE=VGE,
VGE(th) 5.2 6.0 6.8 V
Voltage Tj=25oC
Collector Cut-Off VCE=VCES,VGE=0V,
ICES 1.0 mA
Current Tj=25oC
Gate-Emitter Leakage VGE=VGES,VCE=0V,
IGES 100 nA
Current Tj=25oC
RGint Internal Gate Resistance 0 Ω
td(on) Turn-On Delay Time 171 ns
tr Rise Time 32 ns
td(off) Turn-Off Delay Time 340 ns
VCC=600V,IC=50A,
tf Fall Time 82 ns
RG=15Ω,VGE=±15V,
Turn-On Switching Tj=25oC
Eon 6.10 mJ
Loss
Turn-Off Switching
Eoff 2.88 mJ
Loss
td(on) Turn-On Delay Time 182 ns
tr Rise Time 43 ns
td(off) Turn-Off Delay Time 443 ns
VCC=600V,IC=50A,
tf Fall Time 155 ns
RG=15Ω,VGE=±15V,
Turn-On Switching Tj=125oC
Eon 8.24 mJ
Loss
Turn-Off Switching
Eoff 4.43 mJ
Loss
td(on) Turn-On Delay Time 182 ns
tr Rise Time 43 ns
td(off) Turn-Off Delay Time 464 ns
VCC=600V,IC=50A,
tf Fall Time 175 ns
RG=15Ω,VGE=±15V,
Turn-On Switching Tj=150oC
Eon 8.99 mJ
Loss
Turn-Off Switching
Eoff 4.94 mJ
Loss
tP≤10μs,VGE=15V,
ISC SC Data Tj=150oC,VCC=900V, 200 A
VCEM≤1200V

©2016 STARPOWER Semiconductor Ltd. 1/22/2016 3/13 SN0A

GD50PIY120C6S IGBT Module

Diode-inverter Characteristics TC=25oC unless otherwise noted

Symbol Parameter Test Conditions Min. Typ. Max. Unit
IF=50A,VGE=0V,Tj=25oC 1.70 2.15
Diode Forward
VF IF=50A,VGE=0V,Tj=125oC 1.65 V
Voltage
IF=50A,VGE=0V,Tj=150oC 1.65
Qr Recovered Charge 5.2 μC
Peak Reverse VR=600V,IF=50A,
IRM 51 A
Recovery Current -di/dt=1400A/μs,VGE=-15V
Reverse Recovery Tj=25oC
Erec 1.62 mJ
Energy
Qr Recovered Charge 8.4 μC
Peak Reverse VR=600V,IF=50A,
IRM 57 A
Recovery Current -di/dt=1400A/μs,VGE=-15V
Reverse Recovery Tj=125oC
Erec 2.85 mJ
Energy
Qr Recovered Charge 9.5 μC
Peak Reverse VR=600V,IF=50A,
IRM 60 A
Recovery Current -di/dt=1400A/μs,VGE=-15V
Reverse Recovery Tj=150oC
Erec 3.52 mJ
Energy

Diode-rectifier Characteristics TC=25oC unless otherwise noted

Symbol Parameter Test Conditions Min. Typ. Max. Unit
Diode Forward
VF IF=50A,VGE=0V,Tj=150oC 1.14 V
Voltage
IR Reverse Current Tj=150oC,VR=1600V 3.0 mA

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GD50PIY120C6S IGBT Module

IGBT-brake Characteristics TC=25oC unless otherwise noted

Symbol Parameter Test Conditions Min. Typ. Max. Unit
IC=35A,VGE=15V,
1.70 2.15
Tj=25oC
Collector to Emitter IC=35A,VGE=15V,
VCE(sat) 1.95 V
Saturation Voltage Tj=125oC
IC=35A,VGE=15V,
2.00
Tj=150oC
Gate-Emitter Threshold IC=0.88mA,VCE=VGE,
VGE(th) 5.2 6.0 6.8 V
Voltage Tj=25oC
Collector Cut-Off VCE=VCES,VGE=0V,
ICES 1.0 mA
Current Tj=25oC
Gate-Emitter Leakage VGE=VGES,VCE=0V,
IGES 400 nA
Current Tj=25oC
RGint Internal Gate Resistance 0 Ω
td(on) Turn-On Delay Time 156 ns
tr Rise Time 28 ns
td(off) Turn-Off Delay Time 215 ns
VCC=600V,IC=35A,
tf Fall Time 323 ns
RG=13Ω,VGE=±15V,
Turn-On Switching Tj=25oC
Eon 1.94 mJ
Loss
Turn-Off Switching
Eoff 2.55 mJ
Loss
td(on) Turn-On Delay Time 156 ns
tr Rise Time 30 ns
td(off) Turn-Off Delay Time 229 ns
VCC=600V,IC=35A,
tf Fall Time 507 ns
RG=13Ω,VGE=±15V,
Turn-On Switching Tj=125oC
Eon 2.38 mJ
Loss
Turn-Off Switching
Eoff 3.83 mJ
Loss
td(on) Turn-On Delay Time 153 ns
tr Rise Time 32 ns
td(off) Turn-Off Delay Time 234 ns
VCC=600V,IC=35A,
tf Fall Time 522 ns
RG=13Ω,VGE=±15V,
Turn-On Switching Tj=150oC
Eon 2.60 mJ
Loss
Turn-Off Switching
Eoff 4.02 mJ
Loss
tP≤10μs,VGE=15V,
ISC SC Data Tj=150oC,VCC=900V, 140 A
VCEM≤1200V

©2016 STARPOWER Semiconductor Ltd. 1/22/2016 5/13 SN0A

GD50PIY120C6S IGBT Module

Diode-brake Characteristics TC=25oC unless otherwise noted

Symbol Parameter Test Conditions Min. Typ. Max. Unit
IF=25A,VGE=0V,Tj=25oC 2.10 2.55
Diode Forward
VF IF=25A,VGE=0V,Tj=125oC 2.15 V
Voltage
IF=25A,VGE=0V,Tj=150oC 2.15
Qr Recovered Charge 1.3 μC
Peak Reverse VR=600V,IF=25A,
IRM 31 A
Recovery Current -di/dt=900A/μs,VGE=-15V
Reverse Recovery Tj=25oC
Erec 0.68 mJ
Energy
Qr Recovered Charge 2.2 μC
Peak Reverse VR=600V,IF=25A,
IRM 38 A
Recovery Current -di/dt=900A/μs,VGE=-15V
Reverse Recovery Tj=125oC
Erec 1.46 mJ
Energy
Qr Recovered Charge 2.4 μC
Peak Reverse VR=600V,IF=25A,
IRM 40 A
Recovery Current -di/dt=900A/μs,VGE=-15V
Reverse Recovery Tj=150oC
Erec 1.91 mJ
Energy

NTC Characteristics TC=25oC unless otherwise noted

Symbol Parameter Test Conditions Min. Typ. Max. Unit
R25 Rated Resistance 5.0 kΩ
∆R/R Deviation of R100 TC=100 oC,R100=493.3Ω -5 5 %
Power
P25 20.0 mW
Dissipation
R2=R25exp[B25/50(1/T2-
B25/50 B-value 3375 K
1/(298.15K))]
R2=R25exp[B25/80(1/T2-
B25/80 B-value 3411 K
1/(298.15K))]
R2=R25exp[B25/100(1/T2-
B25/100 B-value 3433 K
1/(298.15K))]

©2016 STARPOWER Semiconductor Ltd. 1/22/2016 6/13 SN0A

GD50PIY120C6S IGBT Module

Module Characteristics TC=25oC unless otherwise noted

Symbol Parameter Min. Typ. Max. Unit
LCE Stray Inductance 60 nH
RCC’+EE’ 4.00
Module Lead Resistance,Terminal to Chip mΩ
RAA’+CC’ 2.00
Junction-to-Case (per IGBT-inverter) 0.512
Junction-to-Case (per Diode-inverter) 0.793
RthJC Junction-to-Case (per Diode-rectifier) 0.813 K/W
Junction-to-Case (per IGBT-brake) 0.685
Junction-to-Case (per Diode-brake) 1.134
Case-to-Heatsink (per IGBT-inverter) 0.134
Case-to-Heatsink (per Diode-inverter) 0.207
Case-to-Heatsink (per Diode-rectifier) 0.212
RthCH K/W
Case-to-Heatsink (per IGBT-brake) 0.179
Case-to-Heatsink (per Diode-brake) 0.296
Case-to-Heatsink (per Module) 0.009
M Mounting Torque, Screw:M5 3.0 6.0 N.m
G Weight of Module 300 g

©2016 STARPOWER Semiconductor Ltd. 1/22/2016 7/13 SN0A

 GD50PIY120C6S IGBT Module

100 100

90 VGE=15V 90
VCE=20V
80 80

70 70

60 60
IC [A]

IC [A]
50 50

40 40

30 30

20 20
Tj=25℃ Tj=25℃
Tj=125℃
10 10 Tj=125℃
Tj=150℃ Tj=150℃
0 0
0 0.5 1 1.5 2 2.5 3 3.5 5 6 7 8 9 10 11 12 13
VCE [V] VGE [V]

Fig 1. IGBT-inverter Output Characteristics Fig 2. IGBT-inverter Transfer Characteristics

30 28
Eon Tj=125℃ Eon Tj=125℃
Eoff Tj=125℃ Eoff Tj=125℃
25 24 Eon Tj=150℃
Eon Tj=150℃
Eoff Tj=150℃ Eoff Tj=150℃
20 VCC=600V
20 VCC=600V IC=50A
RG=15Ω VGE=±15V
16
E [mJ]

E [mJ]

VGE=±15V
15
12
10
8

5 4

0 0
0 20 40 60 80 100 0 30 60 90 120 150
IC [A] RG [Ω]

Fig 3. IGBT-inverter Switching Loss vs. IC Fig 4. IGBT-inverter Switching Loss vs. RG

©2016 STARPOWER Semiconductor Ltd. 1/22/2016 8/13 SN0A

 GD50PIY120C6S IGBT Module

110 1
100 IGBT
Module
90
80
70

ZthJC [K/W]
60
IC [A]

0.1
50
40
30
RG=15Ω
20 i: 1 2 3 4
VGE=±15V ri[K/W]: 0.0306 0.1689 0.1640 0.1485
τi[s]: 0.01 0.02 0.05 0.1

10 Tj=150oC

0 0.01
0 350 700 1050 1400 0.001 0.01 0.1 1 10
VCE [V] t [s]

Fig 5. IGBT-inverter RBSOA Fig 6. IGBT-inverter Transient Thermal Impedance

100 5
Tj=25℃
Tj=125℃ Erec Tj=125℃
Tj=150℃ Erec Tj=150℃
80 4

60 3
E [mJ]
IF [A]

40 2

VCC=600V
20 1 RG=15Ω
VGE=-15V

0 0
0 0.5 1 1.5 2 2.5 0 20 40 60 80 100
VF [V] IF [A]

Fig 7. Diode-inverter Forward Characteristics Fig 8. Diode-inverter Switching Loss vs. IF

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 GD50PIY120C6S IGBT Module

4 1
Erec Tj=125℃ Diode
3.5 Erec Tj=150℃

ZthJC [K/W]
E [mJ]

2.5 0.1

VCC=600V i: 1 2 3 4
1.5 ri[K/W]: 0.0476 0.2616 0.2539 0.2299
IF=50A τi[s]: 0.01 0.02 0.05 0.1

VGE=-15V
1 0.01
0 30 60 90 120 150 0.001 0.01 0.1 1 10
RG [Ω] t [s]

Fig 9. Diode-inverter Switching Loss vs. RG Fig 10. Diode-inverter Transient Thermal Impedance

100 70

90 Tj=25℃
VGE=15V
Tj=150℃ 60
80

70 50

60
40
IC [A]
IF [A]

50
30
40

30 20
20
Tj=25℃
10
10 Tj=125℃
Tj=150℃
0 0
0.5 0.7 0.9 1.1 1.3 1.5 1.7 0 0.5 1 1.5 2 2.5 3 3.5
VF [V] VCE [V]

Fig 11. Diode-rectifier Forward Characteristics Fig 12. IGBT-brake-chopper Output Characteristics

©2016 STARPOWER Semiconductor Ltd. 1/22/2016 10/13 SN0A

 GD50PIY120C6S IGBT Module

50 100
Tj=25℃
45
Tj=125℃
Tj=150℃
40

35
10
30

R [kΩ]
IF [A]

25

20
1
15

10

0 0.1
0 0.5 1 1.5 2 2.5 3 3.5 0 30 60 90 120 150
VF [V] TC [oC]

Fig 13. Diode-brake-chopper Forward Characteristics Fig 14. NTC Temperature Characteristic

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GD50PIY120C6S IGBT Module

Circuit Schematic

Package Dimensions
Dimensions in Millimeters

©2016 STARPOWER Semiconductor Ltd. 1/22/2016 12/13 SN0A

GD50PIY120C6S IGBT Module

Terms and Conditions of Usage

The data contained in this product datasheet is exclusively intended for technically trained
staff. you and your technical departments will have to evaluate the suitability of the product
for the intended application and the completeness of the product data with respect to such
application.

This product data sheet is describing the characteristics of this product for which a warranty is
granted. Any such warranty is granted exclusively pursuant the terms and conditions of the
supply agreement. There will be no guarantee of any kind for the product and its
characteristics.

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or which concerns the specific application of our product, please contact the sales office,
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interested we may provide application notes.

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information on the types in question please contact the sales office, which is responsible for
you.

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If and to the extent necessary, please forward equivalent notices to your customers.
Changes of this product data sheet are reserved.

©2016 STARPOWER Semiconductor Ltd. 1/22/2016 13/13 SN0A