GD50PIT120C6S IGBT Module

STARPOWER
SEMICONDUCTOR IGBT

GD50PIT120C6S
Molding Type Module

1200V/50A PIM in one-package

General Description
STARPOWER IGBT Power Module provides ultra
low conduction loss as well as short circuit ruggedness.
They are designed for the applications such as
general inverters and UPS.

Features
 Low VCE(sat) trench IGBT technology
 10μs short circuit capability
 VCE(sat) with positive temperature coefficient
 Maximum junction temperature 175℃
 Low inductance case
 Fast & soft reverse recovery anti-parallel FWD
 Isolated copper baseplate using DBC technology

Typical Applications
 Inverter for motor drive
 AC and DC servo drive amplifier
 Uninterruptible power supply

©2013 STARPOWER Semiconductor Ltd. 3/6/2013 1/14 Rev.A

GD50PIT120C6S IGBT Module

IGBT-inverter TC=25℃ unless otherwise noted

Maximum Rated Values
Symbol Description GD50PIT120C6S Units
VCES Collector-Emitter Voltage @ Tj=25℃ 1200 V
VGES Gate-Emitter Voltage @ Tj=25℃ ±30 V
Collector Current @ TC=25℃ 90
IC A
@ TC=100℃ 50
ICM Pulsed Collector Current tp=1ms 100 A
Ptot Total Power Dissipation @ Tj=175℃ 340 W

Off Characteristics
Symbol Parameter Test Conditions Min. Typ. Max. Units
Collector-Emitter
V(BR)CES Tj=25℃ 1200 V
Breakdown Vol tage
Collector Cut-Off VCE=VCES,VGE=0V,
ICES 5.0 mA
Current Tj=25℃
Gate-Emitter Leakage VGE=VGES,VCE=0V,
IGES 400 nA
Current Tj=25℃

On Characteristics
Symbol Parameter Test Conditions Min. Typ. Max. Units
Gate-Emitter Threshold IC=2.4mA,VCE=VGE,
VGE(th) 5.0 6.1 7.5 V
Vol tage Tj=25℃
IC=50A,VGE=15V,
1.90 2.35
Tj=25℃
Collector to Emitter IC=50A,VGE=15V,
VCE(sat) 2.30 V
Saturation Voltage Tj=125℃
IC=50A,VGE=15V,
2.40
Tj=150℃

©2013 STARPOWER Semiconductor Ltd. 3/6/2013 2/14 Rev.A

GD50PIT120C6S IGBT Module

Switching Characteristics
Symbol Parameter Test Conditions Min. Typ. Max. Units
td(on) Turn-On Delay Time 534 ns
tr Rise Time 147 ns
td(off) Turn-Off Delay Time 393 ns
VCC=600V,IC=50A,
tf Fall Time RG=18Ω,VGE=±15V, 181 ns
Turn-On Switching
Eon Tj=25℃ 10.6 mJ
Loss
Turn-Off Switching
Eoff 2.67 mJ
Loss
td(on) Turn-On Delay Time 546 ns
tr Rise Time 162 ns
td(off) Turn-Off Delay Time 412 ns
VCC=600V,IC=50A,
tf Fall Time RG=18Ω,VGE=±15V, 306 ns
Turn-On Switching
Eon Tj=125℃ 12.1 mJ
Loss
Turn-Off Switching
Eoff 3.81 mJ
Loss
td(on) Turn-On Delay Time 554 ns
tr Rise Time 168 ns
td(off) Turn-Off Delay Time 453 ns
VCC=600V,IC=50A,
tf Fall Time RG=18Ω,VGE=±15V, 329 ns
Turn-On Switching
Eon Tj=150℃ 14.9 mJ
Loss
Turn-Off Switching
Eoff 4.26 mJ
Loss
Cies Input Capacitance 6.24 nF
Coes Output Capacitance VCE=30V,f=1Mhz, 0.23 nF
Reverse Transfer VGE=0V
Cres 0.15 nF
Capacitance
VCC=600V,IC=50A,
QG Gate Charge 290 nC
VGE=15V
tP≤10μs,VGE=15 V,
ISC SC Data Tj=125℃,VCC=900V, 500 A
VCEM≤1200V

©2013 STARPOWER Semiconductor Ltd. 3/6/2013 3/14 Rev.A

GD50PIT120C6S IGBT Module

Diode-inverter TC=25℃ unless otherwise noted

Maximum Rated Values
Symbol Description GD50PIT120C6S Units
VRRM Repetitive Peak Reverse Voltage @ Tj=25℃ 1200 V
IF DC Forward Current 50 A
IFRM Repetitive Peak Forward Current tp=1ms 100 A

Characteristics Values
Symbol Parameter Test Conditions Min. Typ. Max. Units
Tj=25℃ 1.80 2.20
Diode Forward
VF IF=50A,VGE=0V Tj=125℃ 1.85 V
Vol tage
Tj=150℃ 1.90
Tj=25℃ 3.0
Qr Recovered Charge Tj=125℃ 6.6 μC
Tj=150℃ 10.8
IF=50A, Tj=25℃ 19
Peak Reverse VR=600V, Tj=125℃ 27
IRM A
Recovery Current RG=18Ω,
Tj=150℃ 30
VGE=-15V
Tj=25℃ 0.94
Reverse Recovery
Erec Tj=125℃ 2.18 mJ
Energy
Tj=150℃ 4.12

Diode-rectifier TC=25℃ unless otherwise noted

Maximum Rated Values
Symbol Description GD50PIT120C6S Units
VRRM Repetitive Peak Reverse Voltage @ Tj=25℃ 1600 V
IF(AV) Average On-state Current @ TC=100℃ 59 A
Maximum RMS Current At Rectifier Output
IRMSM 85 A
@ TC=80℃
IFSM Surge Forward Current VR=0V,tp=10ms,Tj=45℃ 850 A
I2t I2t-value,VR=0V,t p=10ms,Tj=45℃ 3610 A2s

Characteristics Values
Symbol Parameter Test Conditions Min. Typ. Max. Units
Diode Forward
VF IF=50A Tj=150℃ 1.10 V
Vol tage
IR Reverse Current Tj=150℃,VR=1600V 1.5 mA

©2013 STARPOWER Semiconductor Ltd. 3/6/2013 4/14 Rev.A

GD50PIT120C6S IGBT Module

IGBT-brake-chopper TC=25℃ unless otherwise noted

Maximum Rated Values
Symbol Description GD50PIT120C6S Units
VCES Collector-Emitter Voltage @ Tj=25℃ 1200 V
VGES Gate-Emitter Voltage @ Tj=25℃ ±30 V
Collector Current @ TC=25℃ 50
IC A
@ TC=100℃ 25
ICM Pulsed Collector Current tp=1ms 50 A
Ptot Total Power Dissipation @ Tj=175℃ 231 W

Off Characteristics
Symbol Parameter Test Conditions Min. Typ. Max. Units
Collector-Emitter
V(BR)CES Tj=25℃ 1200 V
Breakdown Voltage
Collector Cut-Off VCE=VCES,VGE=0V,
ICES 5.0 mA
Current Tj=25℃
Gate-Emitter Leakage VGE=VGES,VCE=0V,
IGES 400 nA
Current Tj=25℃

On Characteristics
Symbol Parameter Test Conditions Min. Typ. Max. Units
Gate-Emitter Threshold IC=1.2mA,VCE=VGE,
VGE(th) 5.0 6.3 7.5 V
Vol tage Tj=25℃
IC=25A,VGE=15V,
1.90 2.35
Tj=25℃
Collector to Emitter IC=25A,VGE=15V,
VCE(sat) 2.30 V
Saturation Voltage Tj=125℃
IC=25A,VGE=15V,
2.40
Tj=150℃

©2013 STARPOWER Semiconductor Ltd. 3/6/2013 5/14 Rev.A

GD50PIT120C6S IGBT Module

Switching Characteristics
Symbol Parameter Test Conditions Min. Typ. Max. Units
td(on) Turn-On Delay Time 233 ns
tr Rise Time 66 ns
td(off) Turn-Off Delay Time 184 ns
VCC=600V,IC=25A,
tf Fall Time RG=33Ω,VGE=±15V, 208 ns
Turn-On Switching
Eon Tj=25℃ 3.06 mJ
Loss
Turn-Off Switching
Eoff 1.16 mJ
Loss
td(on) Turn-On Delay Time 310 ns
tr Rise Time 86 ns
td(off) Turn-Off Delay Time 217 ns
VCC=600V,IC=25A,
tf Fall Time RG=33Ω,VGE=±15V, 324 ns
Turn-On Switching
Eon Tj=125℃ 3.50 mJ
Loss
Turn-Off Switching
Eoff 1.78 mJ
Loss
td(on) Turn-On Delay Time 221 ns
tr Rise Time 68 ns
td(off) Turn-Off Delay Time 225 ns
VCC=600V,IC=25A,
tf Fall Time RG=33Ω,VGE=±15V, 347 ns
Turn-On Switching
Eon Tj=150℃ 4.45 mJ
Loss
Turn-Off Switching
Eoff 2.02 mJ
Loss
Cies Input Capacitance 3.43 nF
Coes Output Capacitance VCE=30V,f=1Mhz, 0.13 nF
Reverse Transfer VGE=0V
Cres 0.08 nF
Capacitance
VCC=600V,IC=25A,
QG Gate Charge 160 nC
VGE=15V
tP≤10μs,VGE=15 V,
ISC SC Data Tj=125℃,V CC=900V, 225 A
VCEM≤1200V

©2013 STARPOWER Semiconductor Ltd. 3/6/2013 6/14 Rev.A

GD50PIT120C6S IGBT Module

Diode-brake-chopper TC=25℃ unless otherwise noted

Maximum Rated Values
Symbol Description GD50PIT120C6S Units
VRRM Repetitive Peak Reverse Voltage @ Tj=25℃ 1200 V
IF DC Forward Current 25 A
IFRM Repetitive Peak Forward Current tp=1ms 50 A

Characteristics Values
Symbol Parameter Test Conditions Min. Typ. Max. Units
Tj=25℃ 1.78 2.18
Diode Forward
VF IF=25A,VGE=0V Tj=125℃ 1.88 V
Vol tage
Tj=150℃ 1.91
Tj=25℃ 1.1
Qr Recovered Charge Tj=125℃ 3.2 μC
Tj=150℃ 4.5
IF=25A, Tj=25℃ 17
Peak Reverse VR=600V, Tj=125℃ 21
IRM A
Recovery Current RG=33Ω,
Tj=150℃ 28
VGE=-15V
Tj=25℃ 0.80
Reverse Recovery
Erec Tj=125℃ 1.38 mJ
Energy
Tj=150℃ 1.96

Electrical Characteristics of NTC TC=25℃ unless otherwise noted

Symbol Parameter Test Conditions Min. Typ. Max. Units
R25 Rated Resistance 5.0 kΩ
∆R/R Deviation of R100 TC=100℃,R100=493.3Ω -5 5 %
P25 Power Dissipation 20.0 mW
R2=R25exp[B25/50(1/T2-
B25/50 B-value 3375 K
1/(298.15K))]

©2013 STARPOWER Semiconductor Ltd. 3/6/2013 7/14 Rev.A

GD50PIT120C6S IGBT Module

IGBT Module
Symbol Parameter Min. Typ. Max. Units
VISO Isolation Voltage RMS,f=50Hz,t=1min 2500 V
LCE Stray Inductance 60 nH
RCC’+EE’ Module Lead Resistance,Terminal to Chip 4.00
mΩ
RAA’+CC’ @ TC=25℃ 2.00
Junction-to-Case (per IGBT-inverter) 0.441
Junction-to-Case (per Diode-inverter) 0.614
RθJC Junction-to-Case (per Diode-rectifier) 0.636 K/W
Junction-to-Case (per IGBT-brake-chopper) 0.649
Junction-to-Case (per Diode-brake-chopper) 0.949
Case-to-Sink (per IGBT-inverter) 0.312
Case-to-Sink (per Diode-inverter) 0.435
RθCS Case-to-Sink (per Diode-rectifier) 0.450
Case-to-Sink (per IGBT-brake-chopper) 0.460
Case-to-Sink (per Diode-brake-chopper) 0.672
RθCS Case-to-Sink (Conductive grease applied) 0.009 K/W
Maximum Junction Temperature
Tjmax (inverter, brake) 175 ℃
Maximum Junction Temperature(rectifier) 150
Operating Junction Temperature
Tjop (inverter, brake) -40 150 ℃
Operating Junction Temperature(rectifier) -40 125
TSTG Storage Temperature Range -40 125 ℃
Mounting
Mounting Screw:M5 3.0 6.0 N.m
Torque
G Weight of Module 300 g

©2013 STARPOWER Semiconductor Ltd. 3/6/2013 8/14 Rev.A

 GD50PIT120C6S IGBT Module

IGBT-inverter Output Characteristics IGBT-inverter Transfer Characteristics

VGE=15V VCE=20V

100 100
Tj=25℃ Tj=25℃
90 90
Tj=125℃
Tj=125℃
80 80 Tj=150℃
Tj=150℃
70 70
60 60
IC [A]

IC [A]
50 50
40 40
30 30
20 20
10 10
0 0
0 0.5 1 1.5 2 2.5 3 3.5 5 6 7 8 9 10 11 12 13 14
VCE [V] VGE [V]

IGBT-inverter Switching Loss vs. IC IGBT-inverter Switching Loss vs. RG

VCC=600V,RG=18Ω,VGE=±15V VCC=600V,IC=50A,VGE=±15V

40 35
Eon,Tj=125℃
Eon,Tj=125℃
35 30 Eoff,Tj=125℃
Eoff,Tj=125℃
Eon,Tj=150℃ Eon,Tj=150℃
30 Eoff,Tj=150℃
Eoff,Tj=150℃ 25
25
20
E [mJ]

E [mJ]

20
15
15
10
10

5 5

0 0
0 10 20 30 40 50 60 70 80 90 100 0 10 20 30 40 50 60 70 80 90 100
IC [A] RG [Ω]

©2013 STARPOWER Semiconductor Ltd. 3/6/2013 9/14 Rev.A

 GD50PIT120C6S IGBT Module

IGBT-inverter RBSOA IGBT-inverter Transient Thermal Impedance

Module, RG=18Ω,VGE=±15V,Tj=150℃

110 1
100
90
80
70

ZthJC [K/W]
60
IC [A]

0.1
50
40
30
20 i: 1 2 3 4
ri[K/W]: 0.0264 0.1456 0.1411 0.1279
10 τi[s]: 0.01 0.02 0.05 0.1

0 0.01
0 350 700 1050 1400 0.001 0.01 0.1 1 10
VCE [V] t [s]

Diode-inverter Forward Characteristics Diode-inverter Switching Loss vs. IF

VCC=600V,RG=18Ω

100 6
90 Tj=25℃ Erec,Tj=125℃
Tj=125℃ 5 Erec,Tj=150℃
80
Tj=150℃
70
4
60
E [mJ]
IF [A]

50 3
40
2
30
20
1
10
0 0
0 0.5 1 1.5 2 2.5 3 0 10 20 30 40 50 60 70 80 90 100
VF [V] IF [A]

©2013 STARPOWER Semiconductor Ltd. 3/6/2013 10/14 Rev.A

 GD50PIT120C6S IGBT Module

Diode-inverter Switching Loss vs. RG Diode-inverter Transient Thermal Impedance

VCC=600V,IF=50A

4.8 1
Erec,Tj=125℃
4.4
Erec,Tj=150℃
4

3.6

ZthJC [K/W]
3.2
E [mJ]

0.1
2.8

2.4

2
i: 1 2 3 4
1.6 ri[K/W]: 0.0368 0.2027 0.1965 0.1780
τi[s]: 0.01 0.02 0.05 0.1

1.2 0.01
0 10 20 30 40 50 60 70 80 90 100 0.001 0.01 0.1 1 10
RG [Ω] t [s]

Diode-rectifier Forward Characteristics IGBT-brake-chopper Output Characteristics

VGE=15V

100 50
90 Tj=25℃ 45 Tj=25℃
Tj=150℃ Tj=125℃
80 40
Tj=150℃
70 35
60 30
IC [A]
IF [A]

50 25
40 20
30 15
20 10
10 5
0 0
0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 0 0.5 1 1.5 2 2.5 3 3.5
VF [V] VCE [V]

©2013 STARPOWER Semiconductor Ltd. 3/6/2013 11/14 Rev.A

 GD50PIT120C6S IGBT Module

Diode-brake-chopper Forward Characteristics NTC Temperature Characteristic

50 100
45 Tj=25℃
Tj=125℃
40
Tj=150℃
35
10
30

R [kΩ]
IF [A]

25
20
1
15
10
5
0 0.1
0 0.5 1 1.5 2 2.5 3 0 30 60 90 120 150
VF [V] TC [℃]

©2013 STARPOWER Semiconductor Ltd. 3/6/2013 12/14 Rev.A

GD50PIT120C6S IGBT Module

Equivalent Circuit Schematic

Package Dimensions
Dimensions in Millimeters

©2013 STARPOWER Semiconductor Ltd. 3/6/2013 13/14 Rev.A

GD50PIT120C6S IGBT Module

Terms and Conditions of Usage

The data contained in this product datasheet is exclusively intended for technically trained
staff. you and your technical departments will have to evaluate the suitability of the product
for the intended application and the completeness of the product data with respect to such
application.

This product data sheet is describing the characteristics of this product for which a warranty is
granted. Any such warranty is granted exclusively pursuant the terms and conditions of the
supply agreement. There will be no guarantee of any kind for the product and its
characteristics.

Should you require product information in excess of the data given in this product data sheet
or which concerns the specific application of our product, please contact the sales office,
which is responsible for you (see www.powersemi.cc), For those that are specifically
interested we may provide application notes.

Due to technical requirements our product may contain dangerous substances. For
information on the types in question please contact the sales office, which is responsible for
you.

Should you intend to use the Product in aviation applications, in health or live endangering or
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If and to the extent necessary, please forward equivalent notices to your customers.
Changes of this product data sheet are reserved.

©2013 STARPOWER Semiconductor Ltd. 3/6/2013 14/14 Rev.A