IKW30N60T

TRENCHSTOP™ Series q
Low Loss DuoPack : IGBT in TRENCHSTOP™ and Fieldstop technology with soft,
fast recovery anti-parallel Emitter Controlled HE diode

Features:
 Very low VCE(sat) 1.5V (typ.)
 Maximum Junction Temperature 175°C G
 Short circuit withstand time 5s E
 Designed for :
- Frequency Converters
- Uninterruptible Power Supply
 TRENCHSTOP™ and Fieldstop technology for 600V applications offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
- very high switching speed PG-TO247-3
- low VCE(sat)
 Positive temperature coefficient in VCE(sat)
 Low EMI
 Low Gate Charge
 Very soft, fast recovery anti-parallel Emitter Controlled HE diode
 Qualified according to JEDEC1 for target applications
 Pb-free lead plating; RoHS compliant
 Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/

Type VCE IC VCE(sat),Tj=25°C Tj,max Marking Package

IKW30N60T 600V 30A 1.5V 175C K30T60 PG-TO247-3

Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage, Tj ≥ 25C VCE 600 V
DC collector current, limited by Tjmax
TC = 25C IC 60
TC = 100C 30
Pulsed collector current, tp limited by Tjmax ICpuls 90
A
Turn off safe operating area, VCE = 600V, Tj = 175C, tp = 1µs - 90
Diode forward current, limited by Tjmax
TC = 25C IF 60
TC = 100C 30
Diode pulsed current, tp limited by Tjmax IFpuls 90
Gate-emitter voltage VGE 20 V
2)
Short circuit withstand time
tSC 5 s
VGE = 15V, VCC  400V, Tj  150C
Power dissipation TC = 25C Ptot 187 W
Operating junction temperature Tj -40...+175
Storage temperature Tstg -55...+150 C
Soldering temperature, 1.6mm (0.063 in.) from case for 10s - 260

1
J-STD-020 and JESD-022
2)
Allowed number of short circuits: <1000; time between short circuits: >1s.

IFAG IPC TD VLS 1 Rev. 2.5 20.09.2013

 IKW30N60T
TRENCHSTOP™ Series q
Thermal Resistance
Parameter Symbol Conditions Max. Value Unit
Characteristic
IGBT thermal resistance, RthJC 0.80 K/W
junction – case
Diode thermal resistance, RthJCD 1.05
junction – case
Thermal resistance, RthJA 40
junction – ambient

Electrical Characteristic, at Tj = 25 C, unless otherwise specified

Value
Parameter Symbol Conditions Unit
min. typ. max.
Static Characteristic
Collector-emitter breakdown voltage V ( B R ) C E S V G E = 0V , I C = 0 .2m A 600 - - V
Collector-emitter saturation voltage VCE(sat) V G E = 15 V , I C = 30 A
T j =2 5 C - 1.5 2.05
T j =1 7 5 C - 1.9 -
Diode forward voltage VF V G E = 0V , I F = 3 0 A
T j =2 5 C - 1.65 2.05
T j =1 7 5 C - 1.6 -
Gate-emitter threshold voltage VGE(th) I C = 0. 43m A , 4.1 4.9 5.7
VCE=VGE
Zero gate voltage collector current ICES V C E = 60 0 V , µA
V G E = 0V
T j =2 5 C - - 40
T j =1 7 5 C - - 2000
Gate-emitter leakage current IGES V C E = 0V , V G E =2 0 V - - 100 nA
Transconductance gfs V C E = 20 V , I C = 30 A - 16.7 - S
Integrated gate resistor RGint - Ω

Dynamic Characteristic
Input capacitance Ciss V C E = 25 V , - 1630 - pF
Output capacitance Coss V G E = 0V , - 108 -
Reverse transfer capacitance Crss f= 1 MH z - 50 -
Gate charge QGate V C C = 48 0 V, I C =3 0 A - 167 - nC
V G E = 15 V
Internal emitter inductance LE - 13 - nH
measured 5mm (0.197 in.) from case
1)
Short circuit collector current IC(SC) V G E = 15 V ,t S C  5 s - 275 - A
V C C = 4 0 0 V,
T j = 15 0 C

1)
Allowed number of short circuits: <1000; time between short circuits: >1s.

IFAG IPC TD VLS 2 Rev. 2.5 20.09.2013

 IKW30N60T
TRENCHSTOP™ Series q
Switching Characteristic, Inductive Load, at Tj=25 C
Value
Parameter Symbol Conditions Unit
min. Typ. max.
IGBT Characteristic
Turn-on delay time td(on) T j=25 C, - 23 - ns
VCC=400V,IC=30A,
Rise time tr VGE=0/15V, - 21 -
Turn-off delay time td(off) rG=10.6, - 254 -
L =136nH,C=39pF
Fall time tf - 46 -
L , C f rom Fig. E
Turn-on energy Eon Energy losses include - 0.69 - mJ
“tail” and diode reverse
Turn-off energy Eoff recovery. - 0.77 -
Total switching energy Ets - 1.46 -
Anti-Parallel Diode Characteristic
Diode reverse recovery time trr T j =2 5 C , - 143 - ns
Diode reverse recovery charge Qrr V R = 4 00 V , I F = 3 0 A, - 0.92 - µC
Diode peak reverse recovery current Irrm d i F / d t =9 1 0 A/ s - 16.3 - A
Diode peak rate of fall of reverse d i r r /d t - 603 - A/s
recovery current during t b

Switching Characteristic, Inductive Load, at Tj=175 C

Value
Parameter Symbol Conditions Unit
min. Typ. max.
IGBT Characteristic
Turn-on delay time td(on) T j=175 C, - 24 - ns
VCC=400V,IC=30A,
Rise time tr VGE=0/15V, - 26 -
Turn-off delay time td(off) rG=10.6, - 292 -
L =136nH,C=39pF
Fall time tf - 90 -
L , C f rom Fig. E
Turn-on energy Eon Energy losses include - 1.0 - mJ
“tail” and diode reverse
Turn-off energy Eoff recovery.
- 1.1 -
Total switching energy Ets - 2.1 -
Anti-Parallel Diode Characteristic
Diode reverse recovery time trr T j =1 7 5 C - 225 - ns
Diode reverse recovery charge Qrr V R = 4 00 V , I F = 3 0 A, - 2.39 - µC
Diode peak reverse recovery current Irrm d i F / d t =9 1 0 A/ s - 22.3 - A
Diode peak rate of fall of reverse d i r r /d t - 310 - A/s
recovery current during t b

IFAG IPC TD VLS 3 Rev. 2.5 20.09.2013

 IKW30N60T
TRENCHSTOP™ Series q
100A
tp =2µs
90A

80A
10µs
70A
IC, COLLECTOR CURRENT

IC, COLLECTOR CURRENT

10A
60A T C =80°C
50µs
50A
T C =110°C
40A

30A 1A 1ms
Ic
20A 10ms
DC
10A Ic

0A
0.1A
100H z 1kHz 10kH z 100kH z
1V 10V 100V 1000V

f, SWITCHING FREQUENCY VCE, COLLECTOR-EMITTER VOLTAGE

Figure 1. Collector current as a function of Figure 2. Safe operating area
switching frequency (D = 0, TC = 25C, Tj 175C;
(Tj  175C, D = 0.5, VCE = 400V, VGE=0/15V)
VGE = 0/15V, rG = 10)

50A
160W
Ptot, POWER DISSIPATION

IC, COLLECTOR CURRENT

40A
120W

30A

80W
20A

40W 10A

0A
0W
25°C 50°C 75°C 100°C 125°C 150°C 25°C 75°C 125°C

TC, CASE TEMPERATURE TC, CASE TEMPERATURE

Figure 3. Power dissipation as a function of Figure 4. Collector current as a function of
case temperature case temperature
(Tj  175C) (VGE  15V, Tj  175C)

IFAG IPC TD VLS 4 Rev. 2.5 20.09.2013

 IKW30N60T
TRENCHSTOP™ Series q
80A

70A 50A
V GE =20V V GE =20V
60A
IC, COLLECTOR CURRENT

IC, COLLECTOR CURRENT

15V 40A 15V
50A 13V 13V
11V 30A 11V
40A
9V 9V
30A 7V 20A 7V

20A
10A
10A

0A 0A
0V 1V 2V 3V 0V 1V 2V 3V

VCE, COLLECTOR-EMITTER VOLTAGE VCE, COLLECTOR-EMITTER VOLTAGE

Figure 5. Typical output characteristic Figure 6. Typical output characteristic
(Tj = 25°C) (Tj = 175°C)
VCE(sat), COLLECTOR-EMITT SATURATION VOLTAGE

50A 2.5V IC =60A

IC, COLLECTOR CURRENT

40A 2.0V

IC =30A
30A 1.5V

1.0V IC =15A
20A

T J = 1 7 5 °C
10A 0.5V
2 5 °C

0A 0.0V
0V 2V 4V 6V 8V 0°C 50°C 100°C 150°C

VGE, GATE-EMITTER VOLTAGE TJ, JUNCTION TEMPERATURE

Figure 7. Typical transfer characteristic Figure 8. Typical collector-emitter
(VCE=10V) saturation voltage as a function of
junction temperature
(VGE = 15V)

IFAG IPC TD VLS 5 Rev. 2.5 20.09.2013

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TRENCHSTOP™ Series q

t d(off)

t d(off)
tf
100ns
t, SWITCHING TIMES

t, SWITCHING TIMES
tf
t d(on)
100ns

10ns
t d(on)
tr

tr

1ns 10ns
0A 10A 20A 30A    

IC, COLLECTOR CURRENT RG, GATE RESISTOR

Figure 9. Typical switching times as a Figure 10. Typical switching times as a
function of collector current function of gate resistor
(inductive load, TJ=175°C, (inductive load, TJ = 175°C,
VCE = 400V, VGE = 0/15V, rG = 10Ω, VCE= 400V, VGE = 0/15V, IC = 30A,
Dynamic test circuit in Figure E) Dynamic test circuit in Figure E)

7V

6V
VGE(th), GATE-EMITT TRSHOLD VOLTAGE

t d(off) m ax.
typ.
5V
t, SWITCHING TIMES

100n s
4V m in.
tf
3V

t d(on) 2V

tr 1V

10 ns 0V
25°C 50 °C 75°C 100°C 12 5°C 150°C -50°C 0°C 50°C 100°C 150°C

TJ, JUNCTION TEMPERATURE TJ, JUNCTION TEMPERATURE

Figure 11. Typical switching times as a Figure 12. Gate-emitter threshold voltage as
function of junction temperature a function of junction temperature
(inductive load, VCE = 400V, (IC = 0.43mA)
VGE = 0/15V, IC = 30A, rG=10Ω,
Dynamic test circuit in Figure E)

IFAG IPC TD VLS 6 Rev. 2.5 20.09.2013

 IKW30N60T
TRENCHSTOP™ Series q
*) Eon and Ets include losses *) E on a nd E ts in clu d e lo ss e s
5.0mJ Ets*
due to diode recovery
d u e to d io d e rec o v e ry
E ts *
E, SWITCHING ENERGY LOSSES

E, SWITCHING ENERGY LOSSES

3 .0m J
4.0mJ

3.0mJ E off
2 .0m J

2.0mJ
Eoff

1 .0m J
1.0mJ
E on *
Eon*
0.0mJ 0 .0m J
0A 10A 20A 30A 40A 50A     

IC, COLLECTOR CURRENT RG, GATE RESISTOR

Figure 13. Typical switching energy losses Figure 14. Typical switching energy losses
as a function of collector current as a function of gate resistor
(inductive load, TJ = 175°C, (inductive load, TJ = 175°C,
VCE = 400V, VGE = 0/15V, rG = 10Ω, VCE = 400V, VGE = 0/15V, IC = 30A,
Dynamic test circuit in Figure E) Dynamic test circuit in Figure E)

*) Eon and Ets include losses *) E on and E ts include losses

2.0mJ
due to diode recovery 3.0m J due to diode recovery
Ets*
E, SWITCHING ENERGY LOSSES

E, SWITCHING ENERGY LOSSES

2.5m J
1.5mJ

2.0m J
E ts *
1.0mJ
Eoff 1.5m J
E off

1.0m J
Eon*
0.5mJ
E on *
0.5m J

0.0mJ 0.0m J
25°C 50°C 75°C 100°C 125°C 150°C 300V 350V 400V 450V 500V 550V
TJ, JUNCTION TEMPERATURE VCE, COLLECTOR-EMITTER VOLTAGE
Figure 15. Typical switching energy losses Figure 16. Typical switching energy losses
as a function of junction as a function of collector emitter
temperature voltage
(inductive load, VCE = 400V, (inductive load, TJ = 175°C,
VGE = 0/15V, IC = 30A, rG = 10Ω, VGE = 0/15V, IC = 30A, rG = 10Ω,
Dynamic test circuit in Figure E) Dynamic test circuit in Figure E)

IFAG IPC TD VLS 7 Rev. 2.5 20.09.2013

 IKW30N60T
TRENCHSTOP™ Series q

C iss
1nF
VGE, GATE-EMITTER VOLTAGE

15V

c, CAPACITANCE
120V

480V
10V

C oss
100pF
5V

C rss

0V 0V 10V 20V 30V 40V

0nC 30nC 60nC 90nC 120nC 150nC 180nC

QGE, GATE CHARGE VCE, COLLECTOR-EMITTER VOLTAGE

Figure 17. Typical gate charge Figure 18. Typical capacitance as a function
(IC=30 A) of collector-emitter voltage
(VGE=0V, f = 1 MHz)

12µs
IC(sc), short circuit COLLECTOR CURRENT

tSC, SHORT CIRCUIT WITHSTAND TIME

400A 10µs

8µs
300A

6µs

200A
4µs

100A 2µs

0µs
0A 10V 11V 12V 13V 14V
12V 14V 16V 18V

VGE, GATE-EMITTETR VOLTAGE VGE, GATE-EMITETR VOLTAGE

Figure 19. Typical short circuit collector Figure 20. Short circuit withstand time as a
current as a function of gate- function of gate-emitter voltage
emitter voltage (VCE=400V, start at TJ=25°C,
(VCE  400V, Tj  150C) TJmax<150°C)

IFAG IPC TD VLS 8 Rev. 2.5 20.09.2013

 IKW30N60T
TRENCHSTOP™ Series q

0
D=0.5 10 K/W
ZthJC, TRANSIENT THERMAL IMPEDANCE

ZthJC, TRANSIENT THERMAL IMPEDANCE

D=0.5
0.2

-1
10 K/W 0.1 0.2
R,(K/W) , (s)
0.29566 6.478*10-2 R,(K/W) , (s)
0.05 0.25779 6.12*10-3 0.1 0.19517 1.079*10-1 6.53*10
0.19382 4.679*10-4 -1
10 K/W 0.26773 1.546*10-2
0.05279 6.45*10-5 0.31252 2.297*10-3
0.02 R1 R2
0.05 0.22545 2.234*10-4
0.04916 7.5*10-6
R1 R2
-2 0.01 0.02
10 K/W C 1 =  1 /R 1 C 2 =  2 /R 2
0.01
single pulse C1= 1/ R1 C 2 =  2 /R 2

-2
single pulse
10 K/W
1µs 10µs 100µs 1ms 10ms 100ms 100ns 1µs 10µs 100µs 1ms 10ms100ms
tP, PULSE WIDTH tP, PULSE WIDTH
Figure 21. IGBT transient thermal Figure 22. Diode transient thermal
impedance impedance as a function of pulse
(D = tp / T) width
(D=tP/T)

T J =175°C
250ns
TJ=175°C 2.0µC
Qrr, REVERSE RECOVERY CHARGE
trr, REVERSE RECOVERY TIME

200ns
1.5µC

150ns

1.0µC

100ns
T J =25°C
TJ=25°C 0.5µC
50ns

0.0µC
0ns 700A/µs 800A/µs 900A/µs 1000A/µs
700A/µs 800A/µs 900A/µs 1000A/µs
diF/dt, DIODE CURRENT SLOPE diF/dt, DIODE CURRENT SLOPE
Figure 23. Typical reverse recovery time as Figure 24. Typical reverse recovery charge
a function of diode current slope as a function of diode current
(VR=400V, IF=30A, slope
Dynamic test circuit in Figure E) (VR = 400V, IF = 30A,
Dynamic test circuit in Figure E)

IFAG IPC TD VLS 9 Rev. 2.5 20.09.2013

 IKW30N60T
TRENCHSTOP™ Series q

T J =175°C
T J=25°C
20A -600A/µs
Irr, REVERSE RECOVERY CURRENT

OF REVERSE RECOVERY CURRENT

dirr/dt, DIODE PEAK RATE OF FALL
15A T J =25°C -450A/µs

T J=175°C
10A -300A/µs

5A -150A/µs

0A 0A/µs
700A/µs 800A/µs 900A/µs 1000A/µs 700A/µs 800A/µs 900A/µs 1000A/µs

diF/dt, DIODE CURRENT SLOPE diF/dt, DIODE CURRENT SLOPE

Figure 25. Typical reverse recovery current Figure 26. Typical diode peak rate of fall of
as a function of diode current reverse recovery current as a
slope function of diode current slope
(VR = 400V, IF = 30A, (VR=400V, IF=30A,
Dynamic test circuit in Figure E) Dynamic test circuit in Figure E)

70A
T J =25°C I F =60A
2.0V
60A 175°C
VF, FORWARD VOLTAGE
IF, FORWARD CURRENT

50A 1.5V 30A

40A
15A
1.0V
30A

20A
0.5V

10A

0A 0.0V
0V 1V 2V 0°C 50°C 100°C 150°C

VF, FORWARD VOLTAGE TJ, JUNCTION TEMPERATURE

Figure 27. Typical diode forward current as Figure 28. Typical diode forward voltage as a
a function of forward voltage function of junction temperature

IFAG IPC TD VLS 10 Rev. 2.5 20.09.2013

 IKW30N60T
TRENCHSTOP™ Series q

IFAG IPC TD VLS 11 Rev. 2.5 20.09.2013

 IKW30N60T
TRENCHSTOP™ Series q
i,v

diF /dt tr r =tS +tF

Qr r =QS +QF

tr r
IF tS tF

QS 10% Ir r m t
QF
Ir r m
dir r /dt VR
90% Ir r m

Figure C. Definition of diodes

switching characteristics

1 2 n
r1 r2 rn
Tj (t)

p(t)
r1 r2 rn

Figure A. Definition of switching times

TC

Figure D. Thermal equivalent

circuit

Figure B. Definition of switching losses

IFAG IPC TD VLS 12 Rev. 2.5 20.09.2013

 IKW30N60T
TRENCHSTOP™ Series q
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2013 Infineon Technologies AG
All Rights Reserved.

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The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or
any information regarding the application of the device, Infineon Technologies hereby disclaims any and all
warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual
property rights of any third party.

Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com).

Warnings

Due to technical requirements, components may contain dangerous substances. For information on the
types in question, please contact the nearest Infineon Technologies Office.
The Infineon Technologies component described in this Data Sheet may be used in life-support devices or
systems and/or automotive, aviation and aerospace applications or systems only with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the
failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or
effectiveness of that device or system. Life support devices or systems are intended to be implanted in the
human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable
to assume that the health of the user or other persons may be endangered.

IFAG IPC TD VLS 13 Rev. 2.5 20.09.2013