TGH80N65F2D2

Field Stop Trench IGBT

Features TO-247
• 650V Field Stop Trench IGBT Technology
• Low Switching Loss for a Wide Temperature Range
• Positive Temperature Coefficient
• Easy Parallel Operation
• RoHS Compliant
• JEDEC Qualification
• 175℃ Operating Temperature

G C E
Applications
• UPS, Inverter, Solar, Welder, Vienna Rectifier

Device Package Marking Remark

TGH80N65F2D2 TO-247 TGH80N65F2D2 RoHS

Absolute Maximum Ratings

Parameter Symbol Value Unit

Collector-Emitter Voltage VCES 650 V

Gate-Emitter Voltage VGES ±20 V
TC = 25 ℃ 160 A
Continuous Collector Current IC
TC = 100 ℃ 80 A
Pulsed Collector Current (Note 1) ICM 240 A
Diode Continuous Forward Current TC = 100 ℃ IF 80 A
Diode Pulsed Forward Current (Note 1) IFM 400 A
TC = 25 ℃ 577 W
Power Dissipation PD
TC = 100 ℃ 288 W
Operating Junction Temperature Tvj -55 ~ 175 ℃
Storage Temperature Range TSTG -55 ~ 150 ℃
Maximum lead temperature for soldering purposes,
TL 300 ℃
1/8” from case for 5 seconds
Notes :
(1) Repetitive rating : Pulse width limited by maximum junction temperature.

Thermal Characteristics
Parameter Symbol Value Unit

Maximum Thermal resistance, Junction-to-Case RθJC (IGBT) 0.26 ℃/W

Maximum Thermal resistance, Junction-to-Case RθJC (DIODE) 0.75 ℃/W
Maximum Thermal resistance, Junction-to-Ambient RθJA 40 ℃/W

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Field Stop Trench IGBT

Electrical Characteristics of the IGBT Tvj=25℃, unless otherwise noted

Parameter Symbol Test condition Min. Typ. Max. Unit

OFF
Collector – Emitter Breakdown Voltage BVCES VGE = 0V, IC = 1mA 650 -- -- V
Zero Gate Voltage Collector Current ICES VCE = 650V, VGE = 0V -- -- 1 mA
Gate – Emitter Leakage Current IGES VCE = 0V, VGE = ± 20V -- -- ± 250 nA
Integrated Gate Resistance RG(int) f = 1MHz, Open Collector -- 2.3 -- Ω

ON
Gate – Emitter Threshold Voltage VGE(TH) VGE = VCE, IC = 80mA 4.0 6.0 7.5 V
VGE = 15V, IC = 80A, Tvj = 25 ℃ -- 1.75 2.25 V
Collector – Emitter Saturation Voltage VCE(SAT) VGE = 15V, IC = 80A, Tvj = 125 ℃ -- 2.15 -- V
VGE = 15V, IC = 80A, Tvj = 175 ℃ -- 2.37 -- V

DYNAMIC
Input Capacitance CIES -- 5000 -- pF
VCE = 30V
Output Capacitance COES VGE = 0V -- 230 -- pF
f = 1MHz
Reverse Transfer Capacitance CRES -- 150 -- pF

Total Gate Charge Qg -- 216 324 nC

VCC = 400V, IC = 80A
Gate-Emitter Charge Qge -- 30 46 nC
VGE = 15V
Gate-Collector Charge Qgc -- 106 159 nC
(Note 2)
SWITCHING
Turn-On Delay Time td(on) -- 37 -- ns
Rise Time tr -- 40 -- ns
Turn-Off Delay Time td(off) -- 186 -- ns
VCC = 400V, IC = 40A
Fall Time tf RG = 5Ω, VGE = 15V -- 20 -- ns
Inductive Load, Tvj = 25 ℃
Turn-On Switching Loss EON -- 1.31 -- mJ
Turn-Off Switching Loss EOFF -- 0.32 -- mJ
Total Switching Loss ETS -- 1.63 -- mJ
Turn-On Delay Time td(on) -- 41 -- ns
Rise Time tr -- 106 -- ns
Turn-Off Delay Time td(off) -- 162 -- ns
VCC = 400V, IC = 80A
Fall Time tf RG = 5Ω, VGE = 15V -- 39 -- ns
Inductive Load, Tvj = 25 ℃
Turn-On Switching Loss EON -- 3.83 5.75 mJ
Turn-Off Switching Loss EOFF -- 1.15 1.73 mJ
Total Switching Loss ETS -- 4.98 7.48 mJ

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 TGH80N65F2D2
Field Stop Trench IGBT

Electrical Characteristics of the IGBT Tvj=25℃, unless otherwise noted

Parameter Symbol Test condition Min. Typ. Max. Unit

SWITCHING (Note 2)
Turn-On Delay Time td(on) -- 38 -- ns
Rise Time tr -- 39 -- ns
Turn-Off Delay Time td(off) -- 212 -- ns
VCC = 400V, IC = 40A
Fall Time tf RG = 5Ω, VGE = 15V -- 30 -- ns
Inductive Load, Tvj = 175 ℃
Turn-On Switching Loss EON -- 2.31 -- mJ
Turn-Off Switching Loss EOFF -- 0.60 -- mJ
Total Switching Loss ETS -- 2.91 -- mJ
Turn-On Delay Time td(on) -- 43 -- ns
Rise Time tr -- 104 -- ns
Turn-Off Delay Time td(off) -- 184 -- ns
VCC = 400V, IC = 80A
Fall Time tf RG = 5Ω, VGE = 15V -- 40 -- ns
Inductive Load, Tvj = 175 ℃
Turn-On Switching Loss EON -- 5.36 8.04 mJ
Turn-Off Switching Loss EOFF -- 1.50 2.25 mJ
Total Switching Loss ETS -- 6.86 10.29 mJ
Notes :
(2) Not subject to production test – verified by design/characterization

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 TGH80N65F2D2
Field Stop Trench IGBT

Electrical Characteristics of the DIODE Tvj=25℃, unless otherwise noted

Parameter Symbol Test condition Min. Typ. Max. Unit

IF = 40A, Tvj = 25 ℃ -- 1.35 -- V

IF = 40A, Tvj = 125 ℃ -- 1.22 -- V
IF = 40A, Tvj = 175 ℃ -- 1.16 -- V
Diode Forward Voltage VFM
IF = 80A, Tvj = 25 ℃ -- 1.62 -- V
IF = 80A, Tvj = 125 ℃ -- 1.55 -- V
IF = 80A, Tvj = 175 ℃ -- 1.52 -- V
Reverse Recovery Time trr -- 186 -- ns
IF = 40A,
Reverse Recovery Current Irr di/dt = 200A/µs, -- 7.1 -- A
Tvj = 25 ℃
Reverse Recovery Charge Qrr -- 778 -- nC
Reverse Recovery Time trr -- 278 -- ns
IF = 40A,
Reverse Recovery Current Irr di/dt = 200A/µs, -- 16.6 -- A
Tvj = 175 ℃
Reverse Recovery Charge Qrr -- 3220 -- nC
Reverse Recovery Time trr -- 231 -- ns
IF = 80A,
Reverse Recovery Current Irr di/dt = 200A/µs, -- 6.8 -- A
Tvj = 25 ℃
Reverse Recovery Charge Qrr -- 936 -- nC
Reverse Recovery Time trr -- 333 -- ns
IF = 80A,
Reverse Recovery Current Irr di/dt = 200A/µs, -- 17.8 -- A
Tvj = 175 ℃
Reverse Recovery Charge Qrr -- 4120 -- nC

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Field Stop Trench IGBT
IGBT Characteristics
Fig. 1 IGBT Output Characteristics Fig. 2 IGBT Output Characteristics
240 240
o
Tvj = 25 C VGE= 15V
12 V
o
210 210 Tvj = 25 C
VGE = 20 V
17 V o
Tvj = 175 C

Collector Current, IC [A]

Collector Current, IC [A]

180 15 V 180

150 10 V 150

120 120

90 90

60 60
8V

30 30

0 0
0 1 2 3 4 5 6 7 8 0 1 2 3 4 5 6
Collector - Emitter Voltage, VCE [V] Collector - Emitter Voltage, VCE [V]

Fig. 3 IGBT Saturation Voltage Fig. 4 IGBT Saturation Voltage vs. Gate Bias
vs. Junction Temperature
4.0 18
o
VGE = 15V Tvj = 25 C
IC = 160A 16
Collector - Emitter Voltage, VCE [V]
Collector - Emitter Voltage, VCE[V]

3.5
14

3.0 12

10
2.5
IC = 80A
8

2.0 6
IC = 40A
4
IC = 40A 80A 160A
1.5
2

1.0 0
25 50 75 100 125 150 175 0 2 4 6 8 10 12 14 16 18 20
o
Junction Temperature, Tvj [ C] Gate - Emitter Voltage, VGE [V]

Fig. 5 IGBT Saturation Voltage vs. Gate Bias Fig. 6 IGBT Capacitance Characteristics
18 10000
o
CIES Tvj = 25 C
o
Tvj = 175 C
16
Collector - Emitter Voltage, VCE [V]

14 COES

12 CRES
Capacitance [pF]

1000
10

6
IC = 40A 80A 160A
4
100 Common Emitter
2 VGE= 0V, f = 1MHz

0 0.1 1 10
0 2 4 6 8 10 12 14 16 18 20
Collector - Emitter Voltage, VCE [V]
Gate - Emitter Voltage, VGE [V]

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Field Stop Trench IGBT
IGBT Characteristics
Fig. 7 Turn-on Time vs. Gate Resistor Fig. 8 Turn-off Time vs. Gate Resistor
1000
o o
Tvj = 25 C Tvj = 25 C
o o
Tvj = 175 C Tvj = 175 C
1000 td(off)
Switching Time [ns]

Switching Time [ns]

tr
100
tf
100
td(on)

Common Emitter
VCC = 400V, VGE = 15V, IC= 80A
10 10
0 10 20 30 40 50 60 70 0 10 20 30 40 50 60 70
Gate Resistor, RG [Ω] Gate Resistor, RG [Ω]

Fig. 9 Switching Loss vs. Gate Resistor Fig. 10 Turn-on Time vs. Collector Current
o o
Tvj = 25 C Tvj = 25 C
o o
Tvj = 175 C Tvj = 175 C
10000 EON
tr
Switching Energy [J]

Switching Time [ns]

EOFF
100

td(on)

1000
Common Emitter Common Emitter
VCC = 400V, VGE = 15V, IC= 80A VCC = 400V, VGE = 15V, RG= 5Ω
10
0 10 20 30 40 50 60 70 0 20 40 60 80 100 120 140 160 180
Gate Resistor, RG [Ω] Collector Current, IC [A]

Fig. 11 Turn-off Time vs. Collector Current Fig. 12 Switching Loss vs. Collector Current
1000 100000
o o
Tvj = 25 C Tvj = 25 C
o o
Tvj = 175 C Tvj = 175 C

EON
td(off) 10000
Switching Energy [J]
Switching Time [ns]

EOFF

100

1000

tf
100
10 Common Emitter Common Emitter
VCC = 400V, VGE = 15V, RG= 5Ω VCC = 400V, VGE = 15V, RG= 5Ω

0 20 40 60 80 100 120 140 160 180 0 20 40 60 80 100 120 140 160 180
Collector Current, IC [A] Collector Current, IC [A]

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Field Stop Trench IGBT
IGBT Characteristics
Fig. 13 Gate Charge Characteristics Fig. 14 SOA
15
IC Max. (pulsed)
o
Tvj = 25 C 50s
VCE = 400V
IC Max. (continuous) 100s
300V 100
500s
200V
Gate-Emitter Voltage, VGE [V]

1ms

Collector Current, IC [A]

10
10 DC operation

1
5

0.1
Common Emitter
IC = 80A, Resistive Load

0
0.01
0 50 100 150 200 250
1 10 100 1000
Gate Charge, Qg [nC] Collector - Emitter Voltage, VCE [V]

Fig. 15 RBSOA Fig. 16 Transient Thermal Impedance of IGBT

0
10
o
VGE = 15V, Tvj = 175 C

Duty = 0.5
Thermal Response [Zthjc]

-1
100 10
Collector Current, IC [A]

0.2

0.1
0.05
-2
10 0.02

0.01
10
single pulse
-3
10

-4
1 10
-5 -4 -3 -2 -1 0
1 10 100 1000 10 10 10 10 10 10
Collector - Emitter Voltage, VCE [V] Rectangular Pulse Width [sec]

Fig. 17 Load Current vs. Frequency

250

TC = 75℃

200
TC = 100℃
Collector Current, IC [A]

150

100

50 Square Wave
Tvj ≤ 175℃ , D = 0.5, VCE = 400V
VGE = 15V, RG = 5

0
10 100 1k 10k 100k
Switching Frequency, f [Hz]

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Field Stop Trench IGBT
DIODE Characteristics
Fig. 18 Diode Conduction Characteristics Fig. 19 Reverse Recovery Current vs. Forward Current
240 10
o
Tvj = 25 C o
Tvj = 25 C
o
Tvj = 175 C

Reverse Recovery Current, Irr [A]

200
8
Forward Current, IF [A]

160
di/dt= 200A/s
6

120

4
di/dt= 100A/s
80

2
40

0 0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 20 40 60 80 100
Forward Voltage, VF [V] Forward Current, IF [A]

Fig. 20 Reverse Recovery Charge vs. Forward Current Fig. 21 Reverse Recovery Time vs. Forward Current
1000 400
o o
Tvj = 25 C Tvj = 25 C
900 di/dt= 200A/s
Reverse Recovery Charge, Qrr [nC]

350
Reverse Recovery Time, trr [ns]

di/dt= 100A/s
800

300
700 di/dt= 100A/s

600 250

500 di/dt= 200A/s

200

400

150
300

200 100
0 20 40 60 80 100 0 20 40 60 80 100
Forward Current, IF [A] Forward Current, IF [A]

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Field Stop Trench IGBT

TO-247 MECHANICAL DATA

mm
symbol
MIN MAX
A 4.80 5.21
A1 2.21 2.59
A2 1.85 2.16
b 1.07 1.40
b1 1.90 2.41
b2 2.87 3.38
c 0.51 0.80
D 20.80 21.34
D1 17.20 18.90
E 15.50 16.13
E1 12.38 13.60
E2 3.68 5.40
e 5.34 5.54
L 19.62 20.57
L1 3.81 4.50
ΦP 3.40 3.80
Q 5.49 6.20
S 6.04 6.30

Disclaimer

TRinno technology reserves the right to make changes without notice to products herein to improve reliability,
performance, or design. The information given in this document is believed to be accurate and reliable.
However, it shall in no event be regarded as a guarantee of conditions and characteristics. With respect to any
information regarding the application of the device, TRinno technology hereby disclaims any and all
warranties and liabilities of any kind, including without limitation, warranties of non-infringement of patent
rights of any third party.

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