Datasheet

60A 650V Trench Fieldstop IGBT with anti-parallel diode SRE60N065FSUD6

General Description Symbol

The SRE60N065FSUD6 is a Field Stop Trench
IGBT with anti-parallel diode, which offers ultra-
low switching losses, high energy efficiency for
switching applications such as PFC, Power
Supply, Inverter, etc.
The SRE60N065FSUD6 package is TO-247.
Figure 1 Symbol of SRE60N065FSUD6
Features
 High Breakdown Voltage to 650V
 Advanced Trench Fieldstop technology Package Type
 Ultra low Eoff
 High Ruggedness, Temperature Stability
 Easy Parallel Switching Capability due to
Positive Temperature Coefficient in
VCE(SAT)
 Low VCE(SAT)
 Enhanced Avalanche Capability

Application TO-247
 Inverter
 Uninterruptible power supplies Figure 2 Package Type of SRE60N065FSUD6
 PFC application
 Converter with high switching frequency

Ordering Information
SRE60N065FSUD6□□–□
Circuit Type E: Lead Free
G: Green
Package Blank: Tube
T: TO-247 TR: Tape & Reel

Part Number Marking ID

Package Packing Type
Green Green
TO-247 SRE60N065FSUD6T-G SRE60N065FSUD6TG Tube

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 Datasheet
60A 650V Trench Fieldstop IGBT with anti-parallel diode SRE60N065FSUD6

Absolute Maximum Ratings

Parameter Symbol Rating Unit

Collector-emitter Voltage VCES 650 V
Gate-emitter Voltage ±20 V
VGES
Transient Gate-emitter Voltage (tp ≤ 10μs) ±30 V
TC=25ºC 100
Continuous Collector Current IC A
TC=100ºC 60
Pulsed Collector Current, Limited by TJmax ICM 240 A
Diode Continuous Collector TC=25ºC 80
IF A
Current TC=100ºC 50
Diode Pulsed Current, Limited by TJmax IFM 200 A
TC=25ºC 306
Power Dissipation Ptot W
TC=100ºC 153
Operating Junction Temperature Range TJ -40 ~ 175(1) ºC
Storage Temperature Range TSTG -55 ~ 150 ºC
Lead Temperature (Soldering, 10 sec) TLEAD 260 ºC
Note:
1. Reliability testing conducted at Tj=175℃.

Thermal Resistance

Parameter Symbol Min. Typ. Max. Unit

IGBT Thermal Resistance，Junction-to-Case RthJC - - 0.49
Diode Thermal Resistance，Junction-to-Case RthJC - - 0.62 ºC/W
Thermal Resistance，Junction-to-Ambient RthJA - - 40

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 Datasheet
60A 650V Trench Fieldstop IGBT with anti-parallel diode SRE60N065FSUD6

Electrical Characteristics

TJ = 25ºC, unless otherwise specified.

Parameter Symbol Test Conditions Min. Typ. Max. Unit
Statistic Characteristics
Collector-emitter Breakdown
BVCES VGE=0V, IC=250μA 650 V
Voltage
Gate Threshold Voltage VGE(th) VCE=VGE, IC=250μA 4.0 4.8 6.0 V
VGE=15V, IC=60A,
1.45 2.0 V
TJ=25ºC
Collector-emitter saturation voltage VCEsat
TJ=125ºC 1.64 V
TJ=175ºC 1.8 V
VCE=650V,VGE=0V
0.1 40 μA
Zero Gate Voltage Collector Current ICES TJ=25ºC
TJ=175ºC 1 mA
Gate-emitter Leakage Forward IGESF VGE=20V, VCE=0V 100 nA
Current Reverse IGESR VGE=-20V, VCE=0V -100 nA
Dynamic Characteristics
Input Capacitance CIES 2350
VCE=25V, VGE=0V,
Output Capacitance COES 220 pF
f=1 MHz
Reverse Transfer Capacitance CRES 25
Gate Resistance RG f=1 MHz, Open Drain 1.7 Ω
Turn-on Delay Time td(on) 35 ns
Rise Time tr 73 ns
Turn-off Delay Time td(off) TJ=25ºC 223 ns
Fall Time tf VCC=400V, IC=60A 16 ns
Turn-on energy Eon RG=20Ω, VGE=0/15V 3.0 mJ
Turn-off energy Eoff 0.80 mJ
Total switching energy Ets 3.80 mJ
Turn-on Delay Time td(on) 30 ns
Rise Time tr 75 ns
Turn-off Delay Time td(off) TJ=150ºC 272 ns
Fall Time tf VCC=400V, IC=60A 32 ns
Turn-on energy Eon RG=20Ω,VGE=0/15V 4.05 mJ
Turn-off energy Eoff 1.05 mJ
Total switching energy Ets 5.1 mJ
Gate to Emitter Charge QGE 32
VCC=400V, IC=60A
Gate to Collector Charge QGC 39 nC
VGE=0 to 15V
Gate Charge Total QG 90

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 Datasheet
60A 650V Trench Fieldstop IGBT with anti-parallel diode SRE60N065FSUD6

Parameter Symbol Test Conditions Min. Typ. Max. Unit

Reverse Diode Characteristics
VGE=0V, IF=60A
1.51 2.0
Drain-Source Diode Forward TJ=25ºC
VF V
Voltage TJ=125ºC 1.41
TJ=175ºC 1.27
Reverse Recovery Time trr 70 ns
Reverse Recovery Charge Qrr TJ=25ºC 860 nC
Peak Reverse Recovery Current Irrm VR=400V, IF=50A 20.0 A
Diode peak rate of fall of reverse dIF/dt=700A/μs
dirr/dt -590 A/μs
recovery current during tb
Reverse Recovery Time trr 250 ns
Reverse Recovery Charge Qrr TJ=150ºC 5.3 μC
Peak Reverse Recovery Current Irrm VR=400V, IF=50A 46.0 A
Diode peak rate of fall of reverse dIF/dt=700A/μs
dirr/dt -330 A/μs
recovery current during tb

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 Datasheet
60A 650V Trench Fieldstop IGBT with anti-parallel diode SRE60N065FSUD6

Typical Performance Characteristics

Figure 3: IGBT FBSOA Figure 4: IGBT transient thermal impedance

IC = f(VCE); VGE ≥ 15/0V; Tj≤ 175ºC Rth(J-C)= f(tp); duty cycle: D= tp/T

Figure 5: Power dissipation Figure 6: Collector current vs. temperature

Ptot= f(Tc); Ic= f(Tj); VGE≥15V; Tj≤175ºC

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 Datasheet
60A 650V Trench Fieldstop IGBT with anti-parallel diode SRE60N065FSUD6

Figure 7: Typ. Output Characteristics Figure 8: Saturation Voltage Characteristics

200 200

180 180

160 VGE=15V 160

VGE=21V
25⁰C
140 140

120 120
150⁰C
ICE(A)

VGE=12V

ICE(A)
100 100

80 80

VGE=9V
60 60

40 40

20 20
VGE=6V
VGE=0V VGE=15V
0 0
0 1 2 3 4 5 0 1 2 3 4
VCE(V) VCE(V)

IC = f(VCE); Tj= 25ºC; parameter: VGE IC = f(VCE); Tj= 25ºC vs 150ºC

Figure 9: IGBT switching energy losses Figure10: IGBT switching energy losses
6.00
6.00

5.00
5.00

4.00 4.00
E (mJ)
E (mJ)

3.00 3.00

2.00 2.00

1.00 1.00

0.00
10 30 50 70 90 110 130 0.00
0 5 10 15 20 25 30 35 40 45 50
IC (A)
Rg (Ω)

E=f(Ic); VCE=400V; Tj=25ºC; RG=20Ω E=f(RG); VCE=400V; Tj=25ºC; Ic=60A

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 Datasheet
60A 650V Trench Fieldstop IGBT with anti-parallel diode SRE60N065FSUD6

Figure 11: Typ. Collector Voltage vs. Figure 12: Typ. emitter threshold voltage as a
Temperature function of junction temperature

VCE =f(Tj); VGE=15V VGE =f(Tj); ICE = 250µA

Figure 13: Typ. Gate Charge Figure 14: Typ. Capacitances

VGE= f(Qgate ); IC= 60A C=f(VCE); VGE=0; f=1MHz

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 Datasheet
60A 650V Trench Fieldstop IGBT with anti-parallel diode SRE60N065FSUD6

Figure 15: Collector-emitter Breakdown Figure 16: Typ. diode forward current as a function
Voltage vs. temperature of forward voltage

900

850

800
BVCES (V)

750

700

650

ICES=1mA
600
0 25 50 75 100 125 150 175 200
Tj (⁰C)

BVces= f(Tj); IF= f(VEC);

Figure 17: IGBT switching energy losses

6.00

5.00
Ets

4.00
E (mJ)

Eon
3.00

2.00

Eoff
1.00

0.00
0 25 50 75 100 125 150 175 200
Tj ( C)

E=f(Tj); VCE=400V; Ic=60A; RG=20Ω

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 Datasheet
60A 650V Trench Fieldstop IGBT with anti-parallel diode SRE60N065FSUD6

Test Circuits
1. Definition Switching times

2. Definition Switching losses

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 Datasheet
60A 650V Trench Fieldstop IGBT with anti-parallel diode SRE60N065FSUD6

3. Definition Diode Switching Characteristics

3. Dynamic test circuit

DUT
(Diode) L Load

C
Vcc Rg DUT
(IGBT)

Rs

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 Datasheet
60A 650V Trench Fieldstop IGBT with anti-parallel diode SRE60N065FSUD6

Mechanical Dimensions

TO-247 Unit: mm

Dimensions(mm) Dimensions(mm)
Symbol Symbol
Min. Typ. Max. Min. Typ. Max.
A 4.80 5.00 5.20 E2 - 5.00 -
A1 2.21 2.41 2.61 E3 - 2.50 -
A2 1.90 2.00 2.10 e 5.44(BSC)
b 1.10 1.20 1.35 L 19.42 19.92 20.42
b1 - 2.00 - L1 - 4.13 -
b2 - 3.00 - P 3.50 3.60 3.70
c 0.55 0.60 0.75 P1 - - 7.40
D 20.80 21.00 21.20 P2 - 2.50 -
D1 - 16.55 - Q - 5.80 -
D2 - 1.20 - S 6.05 6.15 6.25
E 15.60 15.80 16.00 T - 10.00 -
E1 - 13.30 - U - 6.20 -

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 Datasheet
60A 650V Trench Fieldstop IGBT with anti-parallel diode SRE60N065FSUD6

Sanrise Technology Limited Company

http://www.sanrise-tech.com

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