GD75PIX120C6S IGBT Module

STARPOWER
SEMICONDUCTOR IGBT

GD75PIX120C6S
1200V/75A PIM in one-package

General Description
STARPOWER IGBT Power Module provides ultra
low conduction loss as well as short circuit ruggedness.
They are designed for the applications such as
general inverters and UPS.

Features
 Low VCE(sat) Trench IGBT technology
 10μs short circuit capability
 VCE(sat) with positive temperature coefficient
 Maximum junction temperature 175oC
 Low inductance case
 Fast & soft reverse recovery anti-parallel FWD
 Isolated copper baseplate using DBC technology

Typical Applications
 Inverter for motor drive
 AC and DC servo drive amplifier
 Uninterruptible power supply

Equivalent Circuit Schematic

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GD75PIX120C6S IGBT Module

Absolute Maximum Ratings TC=25oC unless otherwise noted

IGBT-inverter
Symbol Description Value Unit
VCES Collector-Emitter Voltage 1200 V
VGES Gate-Emitter Voltage ±20 V
Collector Current @ TC=25oC 113
IC A
@ TC=95oC 75
ICM Pulsed Collector Current tp=1ms 150 A
PD Maximum Power Dissipation @ Tj=175oC 361 W

Diode-inverter
Symbol Description Value Unit
VRRM Repetitive Peak Reverse Voltage 1200 V
IF Diode Continuous Forward Current 75 A
IFM Diode Maximum Forward Current tp=1ms 150 A

Diode-rectifier
Symbol Description Value Unit
VRRM Repetitive Peak Reverse Voltage 1600 V
IO Average Output Current 50Hz/60Hz,sine wave 75 A
Surge Forward Current tp=10ms @ Tj=25oC 600
IFSM A
@ Tj=150oC 470
I2t-value,tp=10ms @ Tj=25oC 1800
I2t A2s
@ Tj=150oC 1100

IGBT-brake
Symbol Description Value Unit
VCES Collector-Emitter Voltage 1200 V
VGES Gate-Emitter Voltage ±20 V
Collector Current @ TC=25oC 70
IC A
@ TC=100oC 35
ICM Pulsed Collector Current tp=1ms 70 A
PD Maximum Power Dissipation @ Tj=175oC 277 W

Diode-brake
Symbol Description Value Unit
VRRM Repetitive Peak Reverse Voltage 1200 V
IF Diode Continuous Forward Current 25 A
IFM Diode Maximum Forward Current tp=1ms 50 A

Module
Symbol Description Value Unit
Maximum Junction Temperature(inverter,brake) 175 o
Tjmax C
Maximum Junction Temperature (rectifier) 150
o
Tjop Operating Junction Temperature -40 to +150 C
o
TSTG Storage Temperature Range -40 to +125 C
VISO Isolation Voltage RMS,f=50Hz,t=1min 2500 V

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GD75PIX120C6S IGBT Module

IGBT-inverter Characteristics TC=25oC unless otherwise noted

Symbol Parameter Test Conditions Min. Typ. Max. Unit
IC=75A,VGE=15V,
1.75 2.20
Tj=25oC
Collector to Emitter IC=75A,VGE=15V,
VCE(sat) 2.00 V
Saturation Voltage Tj=125oC
IC=75A,VGE=15V,
2.05
Tj=150oC
Gate-Emitter Threshold IC=2.72mA,VCE=VGE,
VGE(th) 5.6 6.2 6.8 V
Voltage Tj=25oC
Collector Cut-Off VCE=VCES,VGE=0V,
ICES 1.0 mA
Current Tj=25oC
Gate-Emitter Leakage VGE=VGES,VCE=0V,
IGES 400 nA
Current Tj=25oC
RGint Internal Gate Resistance 2.0 Ω
Cies Input Capacitance 7.04 nF
VCE=25V,f=1MHz,
Reverse Transfer
Cres VGE=0V 0.20 nF
Capacitance
QG Gate Charge VGE=-15…+15V 0.53 μC
td(on) Turn-On Delay Time 137 ns
tr Rise Time 26 ns
td(off) Turn-Off Delay Time 333 ns
VCC=600V,IC=75A,
tf Fall Time 78 ns
RG=2.2Ω,VGE=±15V,
Turn-On Switching Tj=25oC
Eon 2.91 mJ
Loss
Turn-Off Switching
Eoff 4.11 mJ
Loss
td(on) Turn-On Delay Time 146 ns
tr Rise Time 34 ns
td(off) Turn-Off Delay Time 421 ns
VCC=600V,IC=75A,
tf Fall Time 147 ns
RG=2.2Ω,VGE=±15V,
Turn-On Switching Tj=125oC
Eon 6.25 mJ
Loss
Turn-Off Switching
Eoff 6.26 mJ
Loss
td(on) Turn-On Delay Time 146 ns
tr Rise Time 34 ns
td(off) Turn-Off Delay Time 441 ns
VCC=600V,IC=75A,
tf Fall Time 166 ns
RG=2.2Ω,VGE=±15V,
Turn-On Switching
Eon Tj=150oC 7.28 mJ
Loss
Turn-Off Switching
Eoff 7.05 mJ
Loss
tP≤10μs,VGE=15V,
ISC SC Data Tj=150oC,VCC=900V, 300 A
VCEM≤1200V

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GD75PIX120C6S IGBT Module

Diode-inverter Characteristics TC=25oC unless otherwise noted

Symbol Parameter Test Conditions Min. Typ. Max. Unit
IF=75A,VGE=0V,Tj=25oC 1.85 2.30
Diode Forward
VF IF=75A,VGE=0V,Tj=125oC 1.90 V
Voltage
IF=75A,VGE=0V,Tj=150oC 1.95
Qr Recovered Charge 8.4 μC
Peak Reverse VR=600V,IF=75A,
IRM 101 A
Recovery Current -di/dt=1900A/μs,VGE=-15V
Reverse Recovery Tj=25oC
Erec 2.55 mJ
Energy
Qr Recovered Charge 15.0 μC
Peak Reverse VR=600V,IF=75A,
IRM 102 A
Recovery Current -di/dt=1900A/μs,VGE=-15V
Reverse Recovery Tj=125oC
Erec 4.41 mJ
Energy
Qr Recovered Charge 16.7 μC
Peak Reverse VR=600V,IF=75A,
IRM 104 A
Recovery Current -di/dt=1900A/μs,VGE=-15V
Reverse Recovery Tj=150oC
Erec 5.39 mJ
Energy

Diode-rectifier Characteristics TC=25oC unless otherwise noted

Symbol Parameter Test Conditions Min. Typ. Max. Unit
Diode Forward
VF IF=75A,Tj=150oC 1.00 V
Voltage
IR Reverse Current Tj=150oC,VR=1600V 3.0 mA

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GD75PIX120C6S IGBT Module

IGBT-brake Characteristics TC=25oC unless otherwise noted

Symbol Parameter Test Conditions Min. Typ. Max. Unit
IC=35A,VGE=15V,
1.75 2.20
Tj=25oC
Collector to Emitter IC=35A,VGE=15V,
VCE(sat) 2.00 V
Saturation Voltage Tj=125oC
IC=35A,VGE=15V,
2.05
Tj=150oC
Gate-Emitter Threshold IC=1.40mA,VCE=VGE,
VGE(th) 5.6 6.2 6.8 V
Voltage Tj=25oC
Collector Cut-Off VCE=VCES,VGE=0V,
ICES 1.0 mA
Current Tj=25oC
Gate-Emitter Leakage VGE=VGES,VCE=0V,
IGES 400 nA
Current Tj=25oC
RGint Internal Gate Resistance 0 Ω
Cies Input Capacitance 3.62 nF
VCE=25V,f=1MHz,
Reverse Transfer
Cres VGE=0V 0.10 nF
Capacitance
QG Gate Charge VGE=-15…+15V 0.27 μC
td(on) Turn-On Delay Time 22 ns
tr Rise Time 11 ns
td(off) Turn-Off Delay Time 235 ns
VCC=600V,IC=35A,
tf Fall Time 112 ns
RG=12Ω,VGE=±15V,
Turn-On Switching Tj=25oC
Eon 1.62 mJ
Loss
Turn-Off Switching
Eoff 1.96 mJ
Loss
td(on) Turn-On Delay Time 22 ns
tr Rise Time 14 ns
td(off) Turn-Off Delay Time 289 ns
VCC=600V,IC=35A,
tf Fall Time 166 ns
RG=12Ω,VGE=±15V,
Turn-On Switching Tj=125oC
Eon 2.48 mJ
Loss
Turn-Off Switching
Eoff 2.84 mJ
Loss
td(on) Turn-On Delay Time 22 ns
tr Rise Time 15 ns
td(off) Turn-Off Delay Time 303 ns
VCC=600V,IC=35A,
tf Fall Time 196 ns
RG=12Ω,VGE=±15V,
Turn-On Switching
Eon Tj=150oC 2.70 mJ
Loss
Turn-Off Switching
Eoff 3.14 mJ
Loss
tP≤10μs,VGE=15V,
ISC SC Data Tj=150oC,VCC=900V, 140 A
VCEM≤1200V

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GD75PIX120C6S IGBT Module

Diode-brake Characteristics TC=25oC unless otherwise noted

Symbol Parameter Test Conditions Min. Typ. Max. Unit
IF=25A,VGE=0V,Tj=25oC 1.85 2.30
Diode Forward
VF IF=25A,VGE=0V,Tj=125oC 1.90 V
Voltage
IF=25A,VGE=0V,Tj=150oC 1.95
Qr Recovered Charge 2.9 μC
Peak Reverse VR=600V,IF=25A,
IRM 55 A
Recovery Current -di/dt=900A/μs,VGE=-15V
Reverse Recovery Tj=25oC
Erec 0.93 mJ
Energy
Qr Recovered Charge 5.1 μC
Peak Reverse VR=600V,IF=25A,
IRM 58 A
Recovery Current -di/dt=900A/μs,VGE=-15V
Reverse Recovery Tj=125oC
Erec 1.72 mJ
Energy
Qr Recovered Charge 5.6 μC
Peak Reverse VR=600V,IF=25A,
IRM 60 A
Recovery Current -di/dt=900A/μs,VGE=-15V
Reverse Recovery Tj=150oC
Erec 2.01 mJ
Energy

NTC Characteristics TC=25oC unless otherwise noted

Symbol Parameter Test Conditions Min. Typ. Max. Unit
R25 Rated Resistance 5.0 kΩ
∆R/R Deviation of R100 TC=100 oC,R100=493.3Ω -5 5 %
Power
P25 20.0 mW
Dissipation
R2=R25exp[B25/50(1/T2-
B25/50 B-value 3375 K
1/(298.15K))]
R2=R25exp[B25/80(1/T2-
B25/80 B-value 3411 K
1/(298.15K))]
R2=R25exp[B25/100(1/T2-
B25/100 B-value 3433 K
1/(298.15K))]

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GD75PIX120C6S IGBT Module

Module Characteristics TC=25oC unless otherwise noted

Symbol Parameter Min. Typ. Max. Unit
LCE Stray Inductance 60 nH
RCC’+EE’ 4.00
Module Lead Resistance,Terminal to Chip mΩ
RAA’+CC’ 2.00
Junction-to-Case (per IGBT-inverter) 0.415
Junction-to-Case (per Diode-inverter) 0.609
RthJC Junction-to-Case (per Diode-rectifier) 0.712 K/W
Junction-to-Case (per IGBT-brake) 0.541
Junction-to-Case (per Diode-brake) 1.208
Case-to-Heatsink (per IGBT-inverter) 0.132
Case-to-Heatsink (per Diode-inverter) 0.194
Case-to-Heatsink (per Diode-rectifier) 0.227
RthCH K/W
Case-to-Heatsink (per IGBT-brake) 0.172
Case-to-Heatsink (per Diode-brake) 0.385
Case-to-Heatsink (per Module) 0.009
M Mounting Torque, Screw:M5 3.0 6.0 N.m
G Weight of Module 300 g

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 GD75PIX120C6S IGBT Module

150 150

VGE=15V
VCE=20V
125 125

100 100
IC [A]

IC [A]
75 75

50 50

25 Tj=25℃ 25 Tj=25℃
Tj=125℃ Tj=125℃
Tj=150℃ Tj=150℃
0 0
0 0.5 1 1.5 2 2.5 3 3.5 5 6 7 8 9 10 11 12 13
VCE [V] VGE [V]

Fig 1. IGBT-inverter Output Characteristics Fig 2. IGBT-inverter Transfer Characteristics

30 25
Eon,Tj=125℃ Eon,Tj=125℃
Eoff,Tj=125℃ Eoff,Tj=125℃
25 Eon,Tj=150℃ Eon,Tj=150℃
20 Eoff,Tj=150℃
Eoff,Tj=150℃

20 VCC=600V
RG=2.2Ω 15
E [mJ]

E [mJ]

VGE=±15V
15

10
10

5 VCC=600V
5
IC=75A
VGE=±15V
0 0
0 25 50 75 100 125 150 0 4.4 8.8 13.2 17.6 22
IC [A] RG [Ω]

Fig 3. IGBT-inverter Switching Loss vs. IC Fig 4. IGBT-inverter Switching Loss vs. RG

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 GD75PIX120C6S IGBT Module

160 1

140 Module IGBT

120

100

ZthJC [K/W]
IC [A]

80 0.1

60

40
RG=2.2Ω i: 1 2 3 4
VGE=±15V ri[K/W]: 0.0248 0.1368 0.1330 0.1204
τi[s]:
20 0.01 0.02 0.05 0.1
Tj=150oC

0 0.01
0 350 700 1050 1400 0.001 0.01 0.1 1 10
VCE [V] t [s]

Fig 5. IGBT-inverter RBSOA Fig 6. IGBT-inverter Transient Thermal Impedance

150 7
Tj=25℃
Erec Tj=125℃
Tj=125℃
Tj=150℃ 6 Erec Tj=150℃
125

5
100
4
E [mJ]
IF [A]

75
3
50
2
VCC=600V
RG=2.2Ω
25 1 VGE=-15V

0 0
0 0.5 1 1.5 2 2.5 3 0 25 50 75 100 125 150
VF [V] IF [A]

Fig 7. Diode-inverter Forward Characteristics Fig 8. Diode-inverter Switching Loss vs. IF

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 GD75PIX120C6S IGBT Module

6 1
Erec Tj=125℃ Diode
Erec Tj=150℃
5

ZthJC [K/W]
E [mJ]

0.1

2 VCC=600V i: 1 2 3 4
ri[K/W]: 0.0366 0.2009 0.1950 0.1765
IF=75A τi[s]: 0.01 0.02 0.05 0.1

VGE=-15V
1 0.01
0 4.4 8.8 13.2 17.6 22 0.001 0.01 0.1 1 10
RG [Ω] t [s]

Fig 9. Diode-inverter Switching Loss vs. RG Fig 10. Diode-inverter Transient Thermal Impedance

150 70
Tj=25℃
VGE=15V
125 Tj=150℃ 60

50
100
40
IC [A]
IF [A]

75
30
50
20

25 Tj=25℃
10 Tj=125℃
Tj=150℃
0 0
0.5 0.7 0.9 1.1 1.3 1.5 0 0.5 1 1.5 2 2.5 3 3.5
VF [V] VCE [V]

Fig 11. Diode-rectifier Forward Characteristics Fig 12. IGBT-brake-chopper Output Characteristics

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 GD75PIX120C6S IGBT Module

50 100
Tj=25℃
Tj=125℃
Tj=150℃
40

10
30

R [kΩ]
IF [A]

20
1

10

0 0.1
0 0.5 1 1.5 2 2.5 3 0 30 60 90 120 150
VF [V] TC [oC]

Fig 13. Diode-brake-chopper Forward Characteristics Fig 14. NTC Temperature Characteristic

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GD75PIX120C6S IGBT Module

Circuit Schematic

Package Dimensions
Dimensions in Millimeters

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GD75PIX120C6S IGBT Module

Terms and Conditions of Usage

The data contained in this product datasheet is exclusively intended for technically trained
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application.

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or which concerns the specific application of our product, please contact the sales office,
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©2020 STARPOWER Semiconductor Ltd. 3/25/2020 13/13 Preliminary