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FGW75N60HD Discrete IGBT

Discrete IGBT (High-Speed V series)

600V / 75A
Features
Low power loss
Low switching surge and noise
High reliability, high ruggedness (RBSOA, SCSOA etc.)
Applications
Uninterruptible power supply
Power coditionner
Power factor correction circuit

Maximum Ratings and Characteristics Equivalent circuit

Absolute Maximum Ratings (at TC =25°C unless otherwise specified)
Items Symbols Characteristics Units Remarks
Collector-Emitter voltage VCES 600 V
Collector
Gate-Emitter voltage VGES ±20 V
TC =25°C, Tj =150°C
IC@25 100 A
DC Collector Current Note *1
IC@100 75 A TC =100°C, Tj =150°C
Pulsed Collector Current ICP 225 A Note *2
Turn-Off Safe Operating Area - 225 A VCE ≤600V, Tj ≤175°C
Gate
IF@25 60 A Note *1
Diode Forward Current
IF@100 35 A
Diode Pulsed Current I FP 225 A Note *1
Short Circuit Withstand Time tSC 5 μs
VCC ≤300V, VGE=12V Emitter
Tj ≤175°C
IGBT Max. Power Dissipation PD_IGBT 500 TC =25°C
W
FWD Max. Power Dissipation PD_FWD 190 TC =25°C
Operating Junction Temperature Tj -40~+175 °C
Storage Temperature Tstg -55~+175 °C
Note *1 : Current value limited by bonding wire.
Note *2 : Pulse width limited by Tjmax.
Electrical characteristics (at Tj = 25°C unless otherwise specified)
Characteristics
Items Symbols Conditions Units
min. typ. max.
Collector-Emitter Breakdown Voltage V(BR)CES IC = 250μA, VGE = 0V 600 - - V
Tj =25°C - - 250 µA
Zero Gate Voltage Collector Current ICES VCE = 600V, VGE = 0V
Tj =175°C - - 10 mA
Gate-Emitter Leakage Current IGES VCE = 0V, VGE = ±20V - - 200 nA
Gate-Emitter Threshold Voltage VGE (th) VCE = +20V, IC = 75mA 4.0 5.0 6.0 V
Tj =25°C - 1.50 1.95
Collector-Emitter Saturation Voltage VCE (sat) VGE = +15V, IC = 75A V
Tj =175°C - 1.80 -
Input Capacitance Cies VCE=25V - 6150 -
Output Capacitance Coes VGE=0V - 300 - pF
Reverse Transfer Capacitance Cres f=1MHz - 240 -
VCC = 400V
Gate Charge QG IC = 75A - 460 - nC
VGE = 15V
Turn-On Delay Time td(on) Tj = 25°C - 45 -
Rise Time tr VCC = 400V - 130 -
ns
Turn-Off Delay Time td(off) IC = 75A - 450 -
Fall Time tf VGE = 15V - 105 -
Turn-On Energy Eon RG = 10Ω - 3.0 -
L = 500μH
mJ
Turn-Off Energy Eoff Energy loss include “tail” and FWD reverse - 4.2 -
recovery.
Turn-On Delay Time td(on) Tj = 175°C - 45 -
Rise Time tr VCC = 400V - 130 -
ns
Turn-Off Delay Time td(off) IC = 75A - 490 -
Fall Time tf VGE = 15V - 120 -
Turn-On Energy Eon RG = 10Ω - 4.3 -
L = 500μH
mJ
Turn-Off Energy Eoff Energy loss include “tail” and FWD reverse - 4.8 -
recovery.

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FGW75N60HD Discrete IGBT
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FWD Characteristics
Characteristics
Description Symbol Conditions Unit
min. typ. max.
Tj =25°C - 2.0 2.6 V
Forward Voltage Drop VF IF=35A
Tj =175°C - 1.4 - V
VCC =30V,IF = 3.5A
Diode Reverse Recovery Time trr1 - 26 36 ns
-di/dt=200A/μs
VCC =400V
Diode Reverse Recovery Time trr2 0.05 - μs
IF=35A
-diF /dt=200A/µs
Diode Reverse Recovery Charge Qrr - 0.12 - μC
Tj =25°C
VCC =400V
Diode Reverse Recovery Time trr2 - 0.19 - μs
IF=35A
-diF/dt=200A/µs
Diode Reverse Recovery Charge Qrr - 1.10 - μC
Tj =175°C
Thermal resistance characteristics
Characteristics
Items Symbols Conditions Units
min. typ. max.
Thermal Resistance, Junction-Ambient Rth(j-a) - - - 50
Thermal Resistance, IGBT Junction to Case Rth(j-c)_IGBT - - - 0.298 °C/W
Thermal Resistance, FWD Junction to Case Rth(j-c)_FWD - - - 0.781

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Characteristics (Representative)
Graph.1 Graph.2
DC Collector Current vs T C Collector Current vs. switching frequency
V ≥+15V, T ≤175ºC GE j V =+15V, T ≤175ºC, V =400V, D=0.5,
GE C CC

R =10Ω, T =100ºC
G C

140

100
120

100 80

Switching frequency fs [kHz]

Collector current IC [A]

Tj≤175℃
80
60

60

40

40

20
20

0 0
25 50 75 100 125 150 175 0 20 40 60 80 100 120
Case Temperature [°C] Collector-Emitter corrent : ICE [A]

Graph.3 Graph.4
Typical Output Characteristics (V -I ) CE C Typical Output Characteristics (V -I ) CE C

T =25ºC
j T =175ºCj

p j
150 150

VGE=20V
12V VGE=20V
15V
125 125
10V 8V 15V 12V
10V
8V
100 100

75 75
IC [A]

IC [A]

50 50

25 25

0 0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
VCE [V] VCE [V]

Graph.5 Graph.6
Typical Transfer Characteristics Gate Threshold Voltage vs. T j

V =+15V
GE I =75mA, V =20V
C CE

120 8

7
100

6
max.
Gate Threshold Voltage VGE(th) [V]

80
5 typ.

60 4 min.
IC [A]

Tj=175℃ Tj=25℃
3
40

20
1

0 0

0 2 4 6 8 10 -50 -25 0 25 50 75 100 125 150 175

VGE [V] Tj [℃]

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FGW75N60HD Discrete IGBT
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Graph.7 Graph.8
Typical Capacitance Typical Gate Charge
V =0V, f=1MHz, T =25ºC
GE j V =400V, I =75A, T =25ºC
CC C j

20

4
10
Cies

15

VCC=400V
3
10
C [pF]

VGE [V]
10
Coes

Cres
2
10
5

1
10 0 B
-2 -1 0 1
10 10 10 10 0 100 200 300 400 500 600
VCE [V] QG [nC]

Graph.9 Graph.10
Typical switching time vs. I C Typical switching time vs. R G

T =175ºC, V =400V, L=500µH

j CC T =175ºC, V =400V, I =75A, L=500µH
j CC C

V =15V,R =10Ω
GE G V =15V
GE
g j

1000
td(off) 1000 td(off)

tr
Switching Times [nsec]

Switching Times [nsec]

tf
100 tf 100
td(on) td(on)

tr
10 10

1 1
0 20 40 60 80 100 120 140 0 10 20 30 40 50 60
Collector Current IC [A] Gate Resistor RG [Ω]
Graph.11 Graph.12
Typical switching losses vs. I C Typical switching losses vs. R G

T =175ºC, V =400V, L=500µH

j CC T =175ºC, V =400V, I =75A, L=500µH
j CC C

V =15V, R =10Ω
GE G V =15V
GE
, , g , j j
12 12

10 10
Switching Energy Losses [mJ]

Eoff
Switching Energy Losses [mJ]

8 8
Eoff
Eon Eon
6 6

4 4

2 2

0 0
0 20 40 60 80 100 120 140 0 10 20 30 40 50 60
Collector Current IC [A] Gate Resistor RG [Ω]

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FGW75N60HD Discrete IGBT
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Graph.13 Graph.14
FWD Forward voltage drop (V -I ) F F Typical reverse recovery characteristics vs. I F

T =175ºC, V =400V, L=500µH

j CC

V =15V, R =10Ω
GE G

70 250 2.5

60
Tj=175℃ Tj=25℃ 200 2.0

Reverse Recovery Charge [uC]

Reverse recovery Time [nsec]
50

150 1.5
40 trr
IF [A]

30
100 Qrr 1.0

20

50 0.5
10

0 0 0.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 10 20 30 40 50 60 70
VF [V]
IF [A]

Graph.15 Graph.16
Typical reverse recovery loss vs. I F Reverse biased Safe Operating Area
T =175ºC, V =400V, L=500µH
j CC T ≤175ºC, V =+15V/0V, R =10Ω
j GE G

V =15V, R =10Ω
GE G

350 400

300

300
250
Reverse recovery loss [uJ]

Collector current IC [A]

200

200

150

100
100

50

0 0
0 10 20 30 40 50 60 70 0 200 400 600 800

IF [A] Collector-Emitter voltage : VCE [V]

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Graph.17
Transient thermal resistance of IGBT
101

100
Zth(j-c) [℃/W]

10-1

10-2

10-3
10-6 10-5 10-4 10-3 10-2 10-1 100
t [sec]

Graph.18
Transient thermal resistance of FWD
101

100
Zth(j-c) [℃/W]

10-1

10-2

10-3
10-6 10-5 10-4 10-3 10-2 10-1 100
t [sec]

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FGW75N60HD Discrete IGBT
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Outline Drawings, mm

Outview : TO-247 Package

CONNECTION
① GATE
② COLLECTOR
③ EMITTER

DIMENSIONS ARE IN MILLIMETERS.

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WARNING

1.This Catalog contains the product specifications, characteristics, data, materials, and structures as of May 2011.
The contents are subject to change without notice for specification changes or other reasons. When using a product listed in this Catalog, be
sur to obtain the latest specifications.

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