IKW75N60T

TrenchStop® Series q
Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology
with soft, fast recovery anti-parallel EmCon HE diode
C
• Very low VCE(sat) 1.5 V (typ.)
• Maximum Junction Temperature 175 °C
• Short circuit withstand time – 5µs G
E
• Positive temperature coefficient in VCE(sat)
• very tight parameter distribution
• high ruggedness, temperature stable behaviour
• very high switching speed
• Low EMI PG-TO-247-3
• Very soft, fast recovery anti-parallel EmCon HE diode
• Qualified according to JEDEC1) for target applications
• Pb-free lead plating; RoHS compliant
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/

Applications:
• Frequency Converters
• Uninterrupted Power Supply

Type VCE IC VCE(sat),Tj=25°C Tj,max Marking Package

IKW75N60T 600V 75A 1.5V 175°C K75T60 PG-TO-247-3
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage VCE 600 V
DC collector current, limited by Tjmax IC A
2)
TC = 25°C 80
TC = 100°C 75
Pulsed collector current, tp limited by Tjmax ICpuls 225
Turn off safe operating area (VCE ≤ 600V, Tj ≤ 175°C) - 225
Diode forward current, limited by Tjmax IF
TC = 25°C 802)
TC = 100°C 75
Diode pulsed current, tp limited by Tjmax IFpuls 225
Gate-emitter voltage VGE ±20 V
3)
Short circuit withstand time tSC 5 µs
VGE = 15V, VCC ≤ 400V, Tj ≤ 150°C
Power dissipation TC = 25°C Ptot 428 W
Operating junction temperature Tj -40...+175 °C
Storage temperature Tstg -55...+175
Soldering temperature, 1.6mm (0.063 in.) from case for 10s - 260

1)
J-STD-020 and JESD-022
2)
Value limited by bondwire
3)
Allowed number of short circuits: <1000; time between short circuits: >1s.

Power Semiconductors 1 Rev. 2.6 Sep 08

 IKW75N60T
TrenchStop® Series q
Thermal Resistance
Parameter Symbol Conditions Max. Value Unit
Characteristic
IGBT thermal resistance, RthJC 0.35 K/W
junction – case
Diode thermal resistance, RthJCD 0.6
junction – case
Thermal resistance, RthJA 40
junction – ambient

Electrical Characteristic, at Tj = 25 °C, unless otherwise specified

Value
Parameter Symbol Conditions Unit
min. Typ. max.
Static Characteristic
Collector-emitter breakdown voltage V ( B R ) C E S V G E = 0 V , I C =0.2mA 600 - - V
Collector-emitter saturation voltage VCE(sat) V G E = 15 V, I C =75A
T j = 25°C - 1.5 2.0
T j = 175 °C - 1.9 -
Diode forward voltage VF VGE=0V, IF=75A
T j = 25°C - 1.65 2.0
T j = 175 °C - 1.6 -
Gate-emitter threshold voltage VGE(th) I C =1.2mA,V C E =V G E 4.1 4.9 5.7
Zero gate voltage collector current ICES V C E = 60 0 V , µA
VGE=0V
T j = 25°C - - 40
T j = 175 °C - - 1000
Gate-emitter leakage current IGES V C E = 0 V , V G E =20V - - 100 nA
Transconductance gfs V C E =20V, I C =75A - 41 - S
Integrated gate resistor RGint - Ω

Dynamic Characteristic
Input capacitance Ciss V C E =25V, - 4620 - pF
Output capacitance Coss VGE=0V, - 288 -
Reverse transfer capacitance Crss f=1MHz - 137 -
Gate charge QGate V C C = 48 0 V, I C =75A - 470 - nC
V G E =15V
Internal emitter inductance LE - 13 - nH
measured 5mm (0.197 in.) from case
Short circuit collector current1) IC(SC) V G E =15V,t S C ≤5 µs - 690 - A
V C C = 400 V,
T j ≤ 150°C

1)
Allowed number of short circuits: <1000; time between short circuits: >1s.

Power Semiconductors 2 Rev. 2.6 Sep 08

 IKW75N60T
TrenchStop® Series q
Switching Characteristic, Inductive Load, at Tj=25 °C
Value
Parameter Symbol Conditions Unit
min. typ. max.
IGBT Characteristic
Turn-on delay time td(on) T j = 25°C , - 33 - ns
Rise time tr V C C = 40 0 V, I C =75A, - 36 -
V G E = 0 /1 5 V,
Turn-off delay time td(off) R G =5 Ω , - 330 -
Fall time tf L σ 1 ) =1 00nH, - 35 -
Turn-on energy Eon C σ 1 ) =39pF - 2.0 - mJ
Energy losses include
Turn-off energy Eoff “tail” and diode - 2.5 -
Total switching energy Ets reverse recovery. - 4.5 -
Anti-Parallel Diode Characteristic
Diode reverse recovery time trr T j = 25°C , - 121 - ns
Diode reverse recovery charge Qrr V R = 40 0 V , I F =75A, - 2.4 - µC
Diode peak reverse recovery current Irrm d i F /d t= 1460 A/µs - 38.5 - A
Diode peak rate of fall of reverse dirr/dt - 921 - A/µs
recovery current during t b

Switching Characteristic, Inductive Load, at Tj=175 °C

Value
Parameter Symbol Conditions Unit
min. typ. max.
IGBT Characteristic
Turn-on delay time td(on) T j = 175 °C , - 32 - ns
Rise time tr V C C = 40 0 V, I C =75A, - 37 -
V G E = 0 /1 5 V,
Turn-off delay time td(off) RG= 5Ω - 363 -
Fall time tf L σ 1 ) =1 00nH, - 38 -
Turn-on energy Eon C σ 1 ) =39pF - 2.9 - mJ
Energy losses include
Turn-off energy Eoff “tail” and diode - 2.9 -
Total switching energy Ets reverse recovery. - 5.8 -
Anti-Parallel Diode Characteristic
Diode reverse recovery time trr T j = 175 °C - 182 - ns
Diode reverse recovery charge Qrr V R = 40 0 V , I F =75A, - 5.8 - µC
Diode peak reverse recovery current Irrm d i F /d t= 1460 A/µs - 56.2 - A
Diode peak rate of fall of reverse dirr/dt - 1013 - A/µs
recovery current during t b

1)
Leakage inductance L σ a nd Stray capacity C σ due to dynamic test circuit in Figure E.

Power Semiconductors 3 Rev. 2.6 Sep 08

 IKW75N60T
TrenchStop® Series q
tp=1µs
200A
100A
10µs
IC, COLLECTOR CURRENT

IC, COLLECTOR CURRENT

150A

T C =80°C 50µs
10A
100A
T C =110°C

1ms
Ic
50A
10ms
DC
1A
Ic
0A
10H z 100H z 1kH z 10kH z 100kH z 1V 10V 100V 1000V

f, SWITCHING FREQUENCY VCE, COLLECTOR-EMITTER VOLTAGE

Figure 1. Collector current as a function of Figure 2. Safe operating area
switching frequency (D = 0, TC = 25°C, Tj ≤175°C;
(Tj ≤ 175°C, D = 0.5, VCE = 400V, VGE=15V)
VGE = 0/+15V, RG = 5Ω)

400W

120A
350W
IC, COLLECTOR CURRENT
POWER DISSIPATION

300W
90A
250W

200W
60A
150W
Ptot,

100W 30A

50W

0A
0W
25°C 50°C 75°C 100°C 125°C 150°C 25°C 75°C 125°C

TC, CASE TEMPERATURE TC, CASE TEMPERATURE

Figure 3. Power dissipation as a function of Figure 4. DC Collector current as a function
case temperature of case temperature
(Tj ≤ 175°C) (VGE ≥ 15V, Tj ≤ 175°C)

Power Semiconductors 4 Rev. 2.6 Sep 08

 IKW75N60T
TrenchStop® Series q

120A 120A
V G E =20V V GE =20V
IC, COLLECTOR CURRENT

IC, COLLECTOR CURRENT

15V 15V
90A 13V 90A 13V
11V 11V
9V 9V
60A 60A
7V 7V

30A 30A

0A 0A
0V 1V 2V 3V 0V 1V 2V 3V

VCE, COLLECTOR-EMITTER VOLTAGE VCE, COLLECTOR-EMITTER VOLTAGE

Figure 5. Typical output characteristic Figure 6. Typical output characteristic
(Tj = 25°C) (Tj = 175°C)
VCE(sat), COLLECTOR-EMITT SATURATION VOLTAGE

2.5V IC =150A
80A
IC, COLLECTOR CURRENT

2.0V
60A
IC =75A
1.5V

40A
1.0V IC =37.5A

T J = 1 7 5 °C
20A
2 5 °C 0.5V

0A 0.0V
0V 2V 4V 6V 8V 0°C 50°C 100°C 150°C

VGE, GATE-EMITTER VOLTAGE TJ, JUNCTION TEMPERATURE

Figure 7. Typical transfer characteristic Figure 8. Typical collector-emitter
(VCE=20V) saturation voltage as a function of
junction temperature
(VGE = 15V)

Power Semiconductors 5 Rev. 2.6 Sep 08

 IKW75N60T
TrenchStop® Series q

t d(off)

t d(off)
t, SWITCHING TIMES

t, SWITCHING TIMES
100ns
100ns
tf
tf tr

t d(on)
t d(on)

tr
10ns 10ns
0A 40A 80A 120A 5Ω 10Ω 15Ω

IC, COLLECTOR CURRENT RG, GATE RESISTOR

Figure 9. Typical switching times as a Figure 10. Typical switching times as a
function of collector current function of gate resistor
(inductive load, TJ=175°C, (inductive load, TJ = 175°C,
VCE = 400V, VGE = 0/15V, RG = 5Ω, VCE= 400V, VGE = 0/15V, IC = 75A,
Dynamic test circuit in Figure E) Dynamic test circuit in Figure E)

7V

t d(off) 6V
VGE(th), GATE-EMITT TRSHOLD VOLTAGE

m ax.
typ.
5V
t, SWITCHING TIMES

4V m in.
100ns

3V

tf 2V
tr

1V
t d(on)

0V
25°C 50°C 75°C 100°C 125°C 150°C -50°C 0°C 50°C 100°C 150°C

TJ, JUNCTION TEMPERATURE TJ, JUNCTION TEMPERATURE

Figure 11. Typical switching times as a Figure 12. Gate-emitter threshold voltage as
function of junction temperature a function of junction temperature
(inductive load, VCE = 400V, (IC = 1.2mA)
VGE = 0/15V, IC = 10A, RG=5Ω,
Dynamic test circuit in Figure E)

Power Semiconductors 6 Rev. 2.6 Sep 08

 IKW75N60T
TrenchStop® Series q
*) Eon and Ets include losses *) E on an d E ts in c lud e lo s se s
Ets*
due to diode recovery du e to d io d e re co v ery
8.0 m J E ts *
E, SWITCHING ENERGY LOSSES

E, SWITCHING ENERGY LOSSES

12.0mJ

6.0 m J
Eon*

8.0mJ

4.0 m J
Eoff E on *

4.0mJ
2.0 m J
E off

0.0mJ 0.0 m J
0A 20A 40A 60A 80A 100A 120A 140A 0Ω 5Ω 10Ω 15Ω

IC, COLLECTOR CURRENT RG, GATE RESISTOR

Figure 13. Typical switching energy losses Figure 14. Typical switching energy losses
as a function of collector current as a function of gate resistor
(inductive load, TJ = 175°C, (inductive load, TJ = 175°C,
VCE = 400V, VGE = 0/15V, RG = 5Ω, VCE = 400V, VGE = 0/15V, IC = 75A,
Dynamic test circuit in Figure E) Dynamic test circuit in Figure E)

*) Eon and Ets include losses *) E on and E ts include losses

due to diode recovery
Ets* due to diode recovery
5.0mJ 8m J
E, SWITCHING ENERGY LOSSES

E, SWITCHING ENERGY LOSSES

4.0mJ
6m J E on *

E ts *
3.0mJ Eoff
4m J
2.0mJ E off
Eon*
2m J
1.0mJ

0.0mJ 0m J
25°C 50°C 75°C 100°C 125°C 150°C 300V 350V 400V 450V 500V 550V
TJ, JUNCTION TEMPERATURE VCE, COLLECTOR-EMITTER VOLTAGE
Figure 15. Typical switching energy losses Figure 16. Typical switching energy losses
as a function of junction as a function of collector emitter
temperature voltage
(inductive load, VCE = 400V, (inductive load, TJ = 175°C,
VGE = 0/15V, IC = 75A, RG = 5Ω, VGE = 0/15V, IC = 75A, RG = 5Ω,
Dynamic test circuit in Figure E) Dynamic test circuit in Figure E)

Power Semiconductors 7 Rev. 2.6 Sep 08

 IKW75N60T
TrenchStop® Series q

C iss
VGE, GATE-EMITTER VOLTAGE

15V
1nF

c, CAPACITANCE
120V
10V 480V

C oss

5V
C rss
100pF

0V 0V 10V 20V
0nC 100nC 200nC 300nC 400nC

QGE, GATE CHARGE VCE, COLLECTOR-EMITTER VOLTAGE

Figure 17. Typical gate charge Figure 18. Typical capacitance as a function
(IC=75 A) of collector-emitter voltage
(VGE=0V, f = 1 MHz)

12µs
IC(sc), short circuit COLLECTOR CURRENT

SHORT CIRCUIT WITHSTAND TIME

1000 10µs

8µs
750

6µs
500

4µs

250
2µs
tSC,

0
0µs
12 13 14 15 16 17 18 19 20 10V 11V 12V 13V 14V

VGE, GATE-EMITTER VOLTAGE VGE, GATE- EMITTER VOLTAGE

Figure 19. Typical short circuit collector Figure 20. Short circuit withstand time as a
current as a function of gate- function of gate-emitter voltage
emitter voltage (VCE=400V, start at TJ=25°C,
(VCE ≤ 400V, Tj ≤ 150°C) TJmax<150°C)

Power Semiconductors 8 Rev. 2.6 Sep 08

 IKW75N60T
TrenchStop® Series q

D=0.5 D=0.5
ZthJC, TRANSIENT THERMAL RESISTANCE

ZthJC, TRANSIENT THERMAL RESISTANCE

-1
10 K/W 0.2 0.2
-1
10 K/W
0.1 0.1
R,(K/W) τ, (s)
0.05
R,(K/W) τ, (s) 0.1846 0.110373
0.1968 0.115504 0.05
0.1681 0.015543
0.0733 0.009340 0.1261 0.001239
0.02
-2 0.0509 0.000823 0.0818 0.000120
10 K/W 0.02 0.0290 0.000119
0.01 0.04 0.000008
0.01 R 1 R2 R1 R2
-2
10 K/W

C1= τ1/R1 C2= τ2/R2

C 1 = τ 1 /R 1 C 2 = τ 2 /R 2
single pulse
single pulse
-3
10 K/W
1µs 10µs 100µs 1ms 10ms 100ms 100ns 1µs 10µs 100µs 1ms 10ms100ms
tP, PULSE WIDTH tP, PULSE WIDTH
Figure 21. IGBT transient thermal resistance Figure 22. Diode transient thermal
(D = tp / T) impedance as a function of pulse
width
(D=tP/T)

5µC
200ns T J=175°C
TJ=175°C
Qrr, REVERSE RECOVERY CHARGE
trr, REVERSE RECOVERY TIME

4µC
150ns

3µC

100ns
TJ=25°C 2µC
T J=25°C
50ns 1µC

0µC
0ns 1000A/µs 1500A/µs
1000A/µs 1500A/µs
diF/dt, DIODE CURRENT SLOPE diF/dt, DIODE CURRENT SLOPE
Figure 23. Typical reverse recovery time as Figure 24. Typical reverse recovery charge
a function of diode current slope as a function of diode current
(VR=400V, IF=75A, slope
Dynamic test circuit in Figure E) (VR = 400V, IF = 75A,
Dynamic test circuit in Figure E)

Power Semiconductors 9 Rev. 2.6 Sep 08

 IKW75N60T
TrenchStop® Series q

T J =175°C -1200A/µs T J=175°C

60A

OF REVERSE RECOVERY CURRENT

REVERSE RECOVERY CURRENT

dirr/dt, DIODE PEAK RATE OF FALL

-1000A/µs
50A T J=25°C

-800A/µs
40A
T J =25°C
-600A/µs
30A

-400A/µs
20A

-200A/µs
Irr,

10A

0A 0A/µs
1000A/µs 1500A/µs
1000A/µs 1500A/µs

diF/dt, DIODE CURRENT SLOPE diF/dt, DIODE CURRENT SLOPE

Figure 25. Typical reverse recovery current Figure 26. Typical diode peak rate of fall of
as a function of diode current reverse recovery current as a
slope function of diode current slope
(VR = 400V, IF = 75A, (VR=400V, IF=75A,
Dynamic test circuit in Figure E) Dynamic test circuit in Figure E)

200A
T J =25°C I F =150A
2.0V
175°C
VF, FORWARD VOLTAGE
IF, FORWARD CURRENT

150A
1.5V 75A

37.5A
100A
1.0V

50A 0.5V

0A 0.0V
0V 1V 2V
0°C 50°C 100°C 150°C

VF, FORWARD VOLTAGE TJ, JUNCTION TEMPERATURE

Figure 27. Typical diode forward current as Figure 28. Typical diode forward voltage as a
a function of forward voltage function of junction temperature

Power Semiconductors 10 Rev. 2.6 Sep 08

 IKW75N60T
TrenchStop® Series q
PG-TO247-3

MIN MAX MIN MAX

4.90 5.16 0.193 0.203
2.27 2.53 0.089 0.099
1.85 2.11 0.073 0.083 Z8B00003327
1.07 1.33 0.042 0.052
0
1.90 2.41 0.075 0.095
1.90 2.16 0.075 0.085
2.87 3.38 0.113 0.133
2.87 3.13 0.113 0.123
0 5 5
0.55 0.68 0.022 0.027
20.82 21.10 0.820 0.831 7.5mm
16.25 17.65 0.640 0.695
1.05 1.35 0.041 0.053
15.70 16.03 0.618 0.631
13.10 14.15 0.516 0.557
3.68 5.10 0.145 0.201
1.68 2.60 0.066 0.102
5.44 0.214
3 3
19.80 20.31 0.780 0.799 17-12-2007
4.17 4.47 0.164 0.176
3.50 3.70 0.138 0.146
5.49 6.00 0.216 0.236 03
6.04 6.30 0.238 0.248

Power Semiconductors 11 Rev. 2.6 Sep 08

 IKW75N60T
TrenchStop® Series q
i,v

diF /dt tr r =tS +tF

Qr r =QS +QF

tr r
IF tS tF

QS QF 10% Ir r m t
Ir r m
dir r /dt VR
90% Ir r m

Figure C. Definition of diodes

switching characteristics

τ1 τ2 τn
r1 r2 rn
Tj (t)

p(t)
r1 r2 rn

Figure A. Definition of switching times

TC

Figure D. Thermal equivalent

circuit

Figure B. Definition of switching losses Figure E. Dynamic test circuit

Power Semiconductors 12 Rev. 2.6 Sep 08

 IKW75N60T
TrenchStop® Series q
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2008 Infineon Technologies AG
All Rights Reserved.

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The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or
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property rights of any third party.

Information

For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com).

Warnings

Due to technical requirements, components may contain dangerous substances. For information on the
types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies
components may be used in life-support devices or systems only with the express written approval of
Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of
that life-support device or system or to affect the safety or effectiveness of that device or system. Life support
devices or systems are intended to be implanted in the human body or to support and/or maintain and
sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other
persons may be endangered.

Power Semiconductors 13 Rev. 2.6 Sep 08