SGP02N120

SGD02N120, SGI02N120
Fast IGBT in NPT-technology
C
• 40% lower Eoff compared to previous generation
• Short circuit withstand time – 10 µs
• Designed for: G
E
- Motor controls
- Inverter
- SMPS
• NPT-Technology offers:
- very tight parameter distribution
- high ruggedness, temperature stable behaviour
- parallel switching capability
1 PG-TO-252-3-11 PG-TO-262-3-1
• Qualified according to JEDEC for target applications (D-PAK)
PG-TO-220-3-1
(I²-PAK)
• Pb-free lead plating; RoHS compliant
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/

Type VCE IC Eoff Tj Marking Package

SGP02N120 1200V 2A 0.11mJ 150°C GP02N120 PG-TO-220-3-1
SGD02N120 1200V 2A 0.11mJ 150°C 02N120 PG-TO-252-3-11
SGI02N120 1200V 2A 0.11mJ 150°C GI02N120 PG-TO-262-3-1

Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage VCE 1200 V
DC collector current IC A
TC = 25°C 6.2
TC = 100°C 2.8
Pulsed collector current, tp limited by Tjmax ICpul s 9.6
Turn off safe operating area - 9.6
VCE ≤ 1200V, Tj ≤ 150°C
Gate-emitter voltage VGE ±20 V
Avalanche energy, single pulse EAS 10 mJ
IC = 2A, VCC = 50V, RGE = 25Ω, start at Tj = 25°C
2
Short circuit withstand time tSC 10 µs
VGE = 15V, 100V ≤ VCC ≤ 1200V, Tj ≤ 150°C
Power dissipation Ptot 62 W
TC = 25°C
Operating junction and storage temperature Tj , Tstg -55...+150 °C
Soldering temperature, -
PG-TO252 (reflow soldering, MSL3) 260
Other packages: 1.6mm (0.063 in.) from case for 10s 260

1
J-STD-020 and JESD-022
2
Allowed number of short circuits: <1000; time between short circuits: >1s.

Power Semiconductors 1 Rev. 2.3 Sep. 07

 SGP02N120
SGD02N120, SGI02N120
Thermal Resistance
Parameter Symbol Conditions Max. Value Unit
Characteristic
IGBT thermal resistance, RthJC 2.0 K/W
junction – case
Thermal resistance, RthJA PG-TO-220-3-1 62
junction – ambient PG-TO-262-3-1
1)
SMD version, device on PCB RthJA PG-TO-252-3-11 50

Electrical Characteristic, at Tj = 25 °C, unless otherwise specified

Value
Parameter Symbol Conditions Unit
min. typ. max.
Static Characteristic
Collector-emitter breakdown voltage V ( B R ) C E S V G E = 0V , I C = 1 00 µA 1200 - - V
Collector-emitter saturation voltage VCE(sat) V G E = 15 V , I C = 2 A
T j =2 5 °C 2.5 3.1 3.6
T j =1 5 0° C - 3.7 4.3
Gate-emitter threshold voltage VGE(th) I C = 10 0 µA , V C E = V G E 3 4 5
Zero gate voltage collector current ICES V C E = 12 0 0V , V G E = 0V µA
T j =2 5 °C - - 25
T j =1 5 0° C - - 100
Gate-emitter leakage current IGES V C E = 0V , V G E =2 0 V - - 100 nA
Transconductance gfs V C E = 20 V , I C = 2 A 1.5 - S
Dynamic Characteristic
Input capacitance Ciss V C E = 25 V , - 205 250 pF
Output capacitance Coss V G E = 0V , - 20 25
Reverse transfer capacitance Crss f= 1 MH z - 12 14
Gate charge QGate V C C = 96 0 V, I C =2 A - 11 - nC
V G E = 15 V
Internal emitter inductance LE - 7 - nH
measured 5mm (0.197 in.) from case
2)
Short circuit collector current IC(SC) V G E = 15 V ,t S C ≤ 10 µs - 24 - A
10 0 V≤ V C C ≤ 12 0 0 V,
T j ≤ 1 5 0° C

1) 2
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70µm thick) copper area for
collector connection. PCB is vertical without blown air.
2)
Allowed number of short circuits: <1000; time between short circuits: >1s.

Power Semiconductors 2 Rev. 2.3 Sep. 07

 SGP02N120
SGD02N120, SGI02N120
Switching Characteristic, Inductive Load, at Tj=25 °C
Value
Parameter Symbol Conditions Unit
min. typ. max.
IGBT Characteristic
Turn-on delay time td(on) T j =2 5 °C , - 23 30 ns
Rise time tr V C C = 80 0 V, I C = 2 A, - 16 21
Turn-off delay time td(off) V G E = 15 V /0 V , - 260 340
Fall time tf R G = 91 Ω, - 61 80
1)
L σ =1 8 0n H,
Turn-on energy Eon 1) - 0.16 0.21 mJ
C σ = 4 0p F
Turn-off energy Eoff Energy losses include - 0.06 0.08
Total switching energy Ets “tail” and diode - 0.22 0.29
reverse recovery.

Switching Characteristic, Inductive Load, at Tj=150 °C

Value
Parameter Symbol Conditions Unit
min. typ. max.
IGBT Characteristic
Turn-on delay time td(on) T j =1 5 0° C - 26 31 ns
Rise time tr V C C = 80 0 V, - 14 17
Turn-off delay time td(off) I C = 2 A, - 290 350
Fall time tf V G E = 15 V /0 V , - 85 102
Turn-on energy Eon R G = 91 Ω, - 0.27 0.33 mJ
1)
L σ =1 8 0n H,
Turn-off energy Eoff 1) - 0.11 0.15
C σ = 4 0p F
Total switching energy Ets Energy losses include - 0.38 0.48
“tail” and diode
reverse recovery.

1)
Leakage inductance Lσ and stray capacity Cσ due to dynamic test circuit in figure E.

Power Semiconductors 3 Rev. 2.3 Sep. 07

 SGP02N120
SGD02N120, SGI02N120

12A Ic
10A
tp=10µs

10A
IC, COLLECTOR CURRENT

IC, COLLECTOR CURRENT

8A 50µs
1A
TC=80°C
150µs
6A

TC=110°C 500µs
4A 0.1A
20ms

2A Ic DC

0A 0.01A
10Hz 100Hz 1kHz 10kHz 100kHz 1V 10V 100V 1000V
f, SWITCHING FREQUENCY VCE, COLLECTOR-EMITTER VOLTAGE
Figure 1. Collector current as a function of Figure 2. Safe operating area
switching frequency (D = 0, TC = 25°C, Tj ≤ 150°C)
(Tj ≤ 150°C, D = 0.5, VCE = 800V,
VGE = +15V/0V, RG = 91Ω)

7A
60W
6A
50W
5A
IC, COLLECTOR CURRENT
Ptot, POWER DISSIPATION

40W
4A

30W
3A

20W
2A

10W 1A

0W 0A
25°C 50°C 75°C 100°C 125°C 25°C 50°C 75°C 100°C 125°C
TC, CASE TEMPERATURE TC, CASE TEMPERATURE
Figure 3. Power dissipation as a function Figure 4. Collector current as a function of
of case temperature case temperature
(Tj ≤ 150°C) (VGE ≤ 15V, Tj ≤ 150°C)

Power Semiconductors 4 Rev. 2.3 Sep. 07

 SGP02N120
SGD02N120, SGI02N120
7A 7A

6A 6A

5A VGE=17V 5A VGE=17V
IC, COLLECTOR CURRENT

IC, COLLECTOR CURRENT

15V 15V
4A 13V 4A 13V
11V 11V
9V 9V
3A 7V 3A 7V

2A 2A

1A 1A

0A 0A
0V 1V 2V 3V 4V 5V 6V 7V 0V 1V 2V 3V 4V 5V 6V 7V
VCE, COLLECTOR-EMITTER VOLTAGE VCE, COLLECTOR-EMITTER VOLTAGE
Figure 5. Typical output characteristics Figure 6. Typical output characteristics
(Tj = 25°C) (Tj = 150°C)

7A 6V
VCE(sat), COLLECTOR-EMITTER SATURATION VOLTAGE

6A
5V
IC=4A
5A
IC, COLLECTOR CURRENT

4V

4A Tj=+150°C
IC=2A
Tj=+25°C 3V
3A Tj=-40°C IC=1A
2V
2A

1A 1V

0A 0V
3V 5V 7V 9V 11V -50°C 0°C 50°C 100°C 150°C
VGE, GATE-EMITTER VOLTAGE Tj, JUNCTION TEMPERATURE
Figure 7. Typical transfer characteristics Figure 8. Typical collector-emitter
(VCE = 20V) saturation voltage as a function of junction
temperature
(VGE = 15V)

Power Semiconductors 5 Rev. 2.3 Sep. 07

 SGP02N120
SGD02N120, SGI02N120

td(off)
td(off)

tf
t, SWITCHING TIMES

t, SWITCHING TIMES
100ns
tf
100ns

td(on)
td(on)

tr
tr
10ns 10ns
0A 2A 4A 6A 8A 0Ω 50Ω 100Ω 150Ω

IC, COLLECTOR CURRENT RG, GATE RESISTOR

Figure 9. Typical switching times as a Figure 10. Typical switching times as a
function of collector current function of gate resistor
(inductive load, Tj = 150°C, (inductive load, Tj = 150°C,
VCE = 800V, VGE = +15V/0V, RG = 9 1Ω, VCE = 800V, VGE = +15V/0V, IC = 2A,
dynamic test circuit in Fig.E) dynamic test circuit in Fig.E)

6V

td(off)
VGE(th), GATE-EMITTER THRESHOLD VOLTAGE

5V

100ns max.
4V
t, SWITCHING TIMES

tf typ.
3V

min.
td(on) 2V

1V
tr
10ns 0V
-50°C 0°C 50°C 100°C 150°C -50°C 0°C 50°C 100°C 150°C
Tj, JUNCTION TEMPERATURE Tj, JUNCTION TEMPERATURE
Figure 11. Typical switching times as a Figure 12. Gate-emitter threshold voltage
function of junction temperature as a function of junction temperature
(inductive load, VCE = 800V, (IC = 0.3mA)
VGE = +15V/0V, IC = 2A, RG = 91Ω,
dynamic test circuit in Fig.E)

Power Semiconductors 6 Rev. 2.3 Sep. 07

 SGP02N120
SGD02N120, SGI02N120
2.0mJ 0.5mJ
*) Eon and Ets include losses *) Eon and Ets include losses
due to diode recovery. due to diode recovery.
Ets*
Ets*
0.4mJ
E, SWITCHING ENERGY LOSSES

E, SWITCHING ENERGY LOSSES

1.5mJ

0.3mJ
Eon*
Eon*
1.0mJ

0.2mJ

0.5mJ
Eoff 0.1mJ Eoff

0.0mJ 0.0mJ
0A 2A 4A 6A 8A 0Ω 50Ω 100Ω 150Ω
IC, COLLECTOR CURRENT RG, GATE RESISTOR
Figure 13. Typical switching energy losses Figure 14. Typical switching energy losses
as a function of collector current as a function of gate resistor
(inductive load, Tj = 150°C, (inductive load, Tj = 150°C,
VCE = 800V, VGE = +15V/0V, RG = 9 1Ω, VCE = 800V, VGE = +15V/0V, IC = 2A,
dynamic test circuit in Fig.E ) dynamic test circuit in Fig.E )

0.4mJ
*) Eon and Ets include losses
due to diode recovery. Ets*
D=0.5
ZthJC, TRANSIENT THERMAL IMPEDANCE

0
10 K/W
E, SWITCHING ENERGY LOSSES

0.3mJ
0.2
Eon*
0.1

0.2mJ R,(K/W) τ, (s)

0.05
-1 0.66735 0.04691
10 K/W
0.70472 0.00388
0.02 0.62778 0.00041

0.1mJ 0.01
Eoff
R1 R2

-2
10 K/W
single pulse C 1 = τ 1 / R 1 C 2 = τ 2 /R 2
0.0mJ
-50°C 0°C 50°C 100°C 150°C 1µs 10µs 100µs 1ms 10ms 100ms 1s
Tj, JUNCTION TEMPERATURE tp, PULSE WIDTH
Figure 15. Typical switching energy losses Figure 16. IGBT transient thermal
as a function of junction temperature impedance as a function of pulse width
(inductive load, VCE = 800V, (D = tp / T)
VGE = +15V/0V, IC = 2A, RG = 91Ω,
dynamic test circuit in Fig.E )

Power Semiconductors 7 Rev. 2.3 Sep. 07

 SGP02N120
SGD02N120, SGI02N120
20V

Ciss
15V
VGE, GATE-EMITTER VOLTAGE

100pF

C, CAPACITANCE
10V

UCE=960V

5V

Coss

Crss
0V 10pF
0nC 5nC 10nC 15n 0V 10V 20V 30V
QGE, GATE CHARGE VCE, COLLECTOR-EMITTER VOLTAGE
Figure 17. Typical gate charge Figure 18. Typical capacitance as a
(IC = 2A) function of collector-emitter voltage
(VGE = 0V, f = 1MHz)

30µs 40A
IC(sc), SHORT CIRCUIT COLLECTOR CURRENT

25µs
tsc, SHORT CIRCUIT WITHSTAND TIME

30A
20µs

15µs 20A

10µs
10A
5µs

0µs 0A
10V 11V 12V 13V 14V 15V 10V 12V 14V 16V 18V 20V
VGE, GATE-EMITTER VOLTAGE VGE, GATE-EMITTER VOLTAGE
Figure 19. Short circuit withstand time as a Figure 20. Typical short circuit collector
function of gate-emitter voltage current as a function of gate-emitter voltage
(VCE = 1200V, start at Tj = 25°C) (100V ≤VCE ≤1200V, TC = 25°C, Tj ≤ 150°C)

Power Semiconductors 8 Rev. 2.3 Sep. 07

 SGP02N120
SGD02N120, SGI02N120
PG-TO220-3-1

Power Semiconductors 9 Rev. 2.3 Sep. 07

 SGP02N120
SGD02N120, SGI02N120

PG-TO252-3-11

Power Semiconductors 10 Rev. 2.3 Sep. 07

 SGP02N120
SGD02N120, SGI02N120

PG-TO262-3-1 (I² Pak)

10 ±0.2
A B
0...0.3 4.4
1)
8.5 1.27

1 ±0.3
0.05
1)

9.25 ±0.2
11.6 ±0.3
7.55
2.4

13.5 ±0.5
4.55 ±0.2
C

0...0.15 0.5 ±0.1

1.05 2.4
3 x 0.75 ±0.1
2 x 2.54
0.25 M A B C

1)
Typical
Metal surface min. X = 7.25, Y = 6.9
All metal surfaces tin plated, except area of cut.

Power Semiconductors 11 Rev. 2.3 Sep. 07

 SGP02N120
SGD02N120, SGI02N120
i,v

diF /dt tr r =tS +tF

Qr r =QS +QF

tr r
IF tS tF

QS 10% Ir r m t
QF
Ir r m
dir r /dt VR
90% Ir r m

Figure C. Definition of diodes

switching characteristics

τ1 τ2 τn
r1 r2 rn
Tj (t)

p(t)
r1 r2 rn

Figure A. Definition of switching times

TC

Figure D. Thermal equivalent

circuit

Figure B. Definition of switching losses Figure E. Dynamic test circuit

Leakage inductance Lσ =180nH,
and stray capacity Cσ =40pF.

Power Semiconductors 12 Rev. 2.3 Sep. 07

 SGP02N120
SGD02N120, SGI02N120

Edition 2006-01
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 9/12/07.
All Rights Reserved.
Attention please!
The information given in this data sheet shall in no event be regarded as a guarantee of conditions or
characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device, Infineon Technologies
hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types
in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or
system. Life support devices or systems are intended to be implanted in the human body, or to support
and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health
of the user or other persons may be endangered.

Power Semiconductors 13 Rev. 2.3 Sep. 07

Mouser Electronics

Authorized Distributor

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