S T M4532

S amHop Microelectronics C orp.

Mar.30, 2005 V er1.1

Dual E nhancement Mode Field E ffect Transistor ( N and P Channel)

P R ODUC T S UMMAR Y (N-C hannel)
V DS S
30V

P R ODUC T S UMMAR Y (P -C hannel)

V DS S
-30V

ID
5.5A

R DS (ON)

( m W ) Max

ID
-4.5A

R DS (ON)

( m W ) Max

40@ V G S = 10V 50@ V G S = 4.5V

D1
8

55@ V G S = -10V 85@ V G S = -4.5V

D1
7

D2
6

D2
5

S O-8 1
1 2 3 4

S1

G1 S 2

G2

ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwise noted)

P arameter Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous a @ T J =125 C b -P ulsed Drain-S ource Diode Forward C urrent a Maximum P ower Dissipation a Operating Junction and S torage Temperature R ange S ymbol V DS V GS ID IDM IS PD T J , T S TG N-C hannel P-C hannel 30 20 5.5 23 1.7 2.0 -55 to 150 -30 20 -4.5 -18 -1.7 Unit V V A A A W C

THE R MAL C HAR AC TE R IS TIC S

Thermal R esistance, Junction-to-Ambient a R JA 62.5 C /W

S T M4532
N-Channel E LE CTR ICAL CHAR ACTE R IS TICS (T A =25 C unless otherwise noted)
Parameter OFF CHAR ACTE R IS TICS
Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage BV DS S IDS S IGS S V GS (th) R DS (ON) ID(ON) gFS
c

S ymbol

Condition
V GS = 0V, ID = 250uA V DS = 24V, V GS = 0V V GS = 20V, V DS = 0V V DS = V GS , ID = 250uA V GS =10V, ID = 6A V GS =4.5V, ID = 5.2A V DS = 5V, V GS = 10V V DS = 10V, ID = 6.0A

Min Typ C Max Unit

30 1 100 0.8 28 40 15 6 510 155 127 1.8 40 50 V uA nA V
m ohm m ohm

ON CHAR ACTE R IS TICS b

Gate Threshold Voltage Drain-S ource On-S tate R esistance On-S tate Drain Current Forward Transconductance

A S
PF PF PF

DYNAMIC CHAR ACTE R IS TICS

Input Capacitance Output Capacitance R everse Transfer Capacitance

C IS S C OS S CRSS
c

V DS =8V, V GS = 0V f =1.0MH Z

S WITCHING CHAR ACTE R IS TICS

Turn-On Delay Time R ise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-S ource Charge Gate-Drain Charge

tD(ON) tr tD(OFF) tf Qg Q gs Q gd

V DD = 10V, ID = 1A, V GE N = 4.5V, R L = 10 ohm R GE N = 6 ohm V DS =10V, ID = 6A, V GS =4.5V

2

15.6 9.7 26.3 26.9 9.3 2.5 3.2

ns ns ns ns nC nC nC

S T M4532
P-Channel E LE CTR ICAL CHAR ACTE R IS TICS (T A = 25 C unless otherwise noted)
Parameter OFF CHAR ACTE R IS TICS
Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage BV DS S IDS S IGS S V GS (th) R DS (ON) ID(ON) gFS C IS S C OS S CRSS
c

S ymbol

Condition
V GS = 0V, ID = -250uA V DS = -24V, V GS = 0V V GS = 20V, V DS = 0V V DS = V GS , ID = -250uA V GS =-10V, ID = -4.9A V GS =-4.5V, ID = -3.6A V DS = -5V, V GS = -10V V DS = -15V, ID = - 4.9A

Min Typ C Max Unit

-30 -1 100 -1 -1.5 45 75 -12 4 393 116 45 -2.5 V uA nA V

ON CHAR ACTE R IS TICS b

Gate Threshold Voltage Drain-S ource On-S tate R esistance On-S tate Drain Current Forward Transconductance 55 m ohm 85 m ohm A S
PF PF PF

DYNAMIC CHAR ACTE R IS TICS c

Input Capacitance Output Capacitance R everse Transfer Capacitance V DS =-15V, V GS = 0V f =1.0MH Z

S WITCHING CHAR ACTE R IS TICS

Turn-On Delay Time R ise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-S ource Charge Gate-Drain Charge

tD(ON) tr tD(OFF) tf Qg Q gs Q gd

V D = -15V, R L = 15 ohm ID = -1A, V GE N = -10V, R GE N = 6 ohm V DS =-15V, ID=-4.9A,V GS =-10V V DS =-15V, ID=-4.9A,V GS =-4.5V V DS =-15V, ID = - 4.9A, V GS =-10V
3

13 4.7 47.1 17 15.6 7.3 2.4 3.3

ns ns ns ns nC nC nC nC

S T M4532
E LE CTR ICAL CHAR ACTE R IS TICS (T A=25 C unless otherwise noted)
Parameter
Diode Forward Voltage

S ymbol
VSD

Condition
V G S = 0V, Is =1.7A N-C h V G S = 0V, Is =-1.7A P -C h

Min Typ Max Unit

0.77 1.2 -0.82 -1.2

DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS b

V Notes a.S urface Mounted on FR 4 Board, t 10sec. b.Pulse Test:Pulse Width 300us, Duty Cycle 2%. c.Guaranteed by design, not subject to production testing.
N-C hannel
ID , Drain C urrent(A)
10 V G S =10,9,8,7,6,5,4,3V 8 20 25

I D , Drain C urrent (A)

15

4 2 0 V G S =1.5V

10 25 C 5 0 0.0 T j=125 C -55 C

10

12

0.5

1.0

1.5

2.0

2.5

3.0

V DS , Drain-to-S ource Voltage (V )

V G S , G ate-to-S ource Voltage (V )

F igure 1. Output C haracteris tics

1200 1.8

F igure 2. Trans fer C haracteris tics

R DS (ON) , On-R es is tance Normalized

1000

1.6 1.4 1.2 1.0 0.8 0.6 -55

V G S =10V I D =6A

C , C apacitance (pF )

800 600 400 200 0 C os s 0 2 4 6 8 C rs s 10 12

C is s

-25

25

50

75

100

125

V DS , Drain-to S ource Voltage (V )

T J , J unction T emperature ( C )

F igure 3. C apacitance

F igure 4. On-R es is tance Variation with Drain C urrent and Temperature

S T M4532
N-C hannel
B V DS S , Normalized Drain-S ource B reakdown V oltage V th, Normalized G ate-S ource T hres hold V oltage
1.6 1.4 1.2 1.0 0.8 0.6 0.4 -55 -25 0 25 50 75 100 125 150 V DS =V G S I D =250uA 1.15 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 I D =250uA

T j, J unction T emperature ( C )

T j, J unction T emperature ( C )

F igure 5. G ate T hres hold V ariation with T emperature

F igure 6. B reakdown V oltage V ariation with T emperature

18

20

gF S , T rans conductance (S )

12 9 6 3 0 0 5 10 15 20 25 V DS =10V

Is , S ource-drain current (A)

15

10

1 0 0.4 0.6 0.8 1.0 T J =25 C 1.2 1.4

I DS , Drain-S ource C urrent (A)

V S D , B ody Diode F orward V oltage (V )

F igure 7. T rans conductance V ariation with Drain C urrent

F igure 8. B ody Diode F orward V oltage V ariation with S ource C urrent

S T M4532
P -C hannel
25 -V G S =10,9,8,7,6,5,4,3V 20 16 20 25 C T j=125 C

-I D , Drain C urrent (A)

-I D , Drain C urrent (A)

15

12 -55 C 8

10 5 0 -V G S =1.5V

4 0

10

12

0.5

1.5

2.5

-V DS , Drain-to-S ource Voltage (V )

-V G S , G ate-to-S ource Voltage (V )

F igure 1. Output C haracteris tics

F igure 2. Trans fer C haracteris tics

R DS (ON) , On-R es is tance(Ohms ) (Normalized)

600 500

1.8 1.6 1.4 1.2 1.0 0.8 0.6 -55 V G S =-10V I D =-4.9A

C , C apacitance (pF )

400 300 200

C is s

C os s 100 0 C rs s 0 5 10 15 20 25 30

-25

25

50

75

100

125

-V DS , Drain-to S ource Voltage (V )

T j, J unction T emperature ( C )

F igure 3. C apacitance

F igure 4. On-R es is tance Variation with Temperature

S T M4532
P -C hannel
V DS =V G S I D =-250uA

B V DS S , Normalized Drain-S ource B reakdown V oltage

V th, Normalized G ate-S ource T hres hold V oltage

1.09 1.06 1.03 1.00 0.9 0.6 0.3 -50 -25 0 25 50 75 100 125 150

1.15 I D =-250uA 1.10 1.05 1.00 0.95 0.90 0.85 -55 -25 0 25 50 75 100 125 150

T j, J unction T emperature ( C )

T j, J unction T emperature ( C )

F igure 5. G ate T hres hold V ariation with T emperature

10

F igure 6. B reakdown V oltage V ariation with T emperature

20.0 T J =25 C

gF S , T rans conductance (S )

6 4 2 V DS =-15V 0 0 5 10 15 20

-Is , S ource-drain current (A)

10.0

1.0

0.0

0.5

1.0

1.5

2.0

2.5

-I DS , Drain-S ource C urrent (A)

-V S D , B ody Diode F orward V oltage (V )

F igure 7. T rans conductance V ariation with Drain C urrent

F igure 8. B ody Diode F orward V oltage V ariation with S ource C urrent

S T M4532
N-C hannel
V G S , G ate to S ource V oltage (V ) I D , Drain C urrent (A)

5 4 3 2 1 0 0 2 4 6 8 10 12 14 16
Q g, T otal G ate C harge (nC )

50

V DS =10V I D =6A

10

RD

(O

L N)

im

it
10
10 0m s

ms

11

DC

1s

0.1 0.03

V G S =10V S ingle P ulse T c=25 C 0.1 1 10 20 30 50

V DS , Drain-S ource V oltage (V )

F igure 9. G ate C harge

F igure 10. Maximum S afe O perating Area

P -C hannel
-V G S , G ate to S ource V oltage (V )

10
-I D , Drain C urrent (A)

40

8 6 4 2 0 0

V DS =-15V I D =-4.9A

10
RD

ON S(

)L

im

it

10m 100 ms

11
DC

1s

0.1 0.03

V G S =-10V S ingle P ulse T A =25 C 0.1 1 10 30 50

10

12

14 16

Q g, T otal G ate C harge (nC )

-V DS , B ody Diode F orward V oltage (V )

F igure 9. G ate C harge

F igure 10. Maximum S afe O perating Area

S T M4532
V DD ton V IN D VG S R GE N G
90%

toff tr
90%

RL V OUT

td(on) V OUT

td(off)
90% 10%

tf

10%

INVE R TE D

V IN

50% 10%

50%

P ULS E WIDTH

F igure 11. S witching T es t C ircuit

F igure 12. S witching Waveforms

r(t),Normalized E ffective T ransient T hermal Impedance

1 Duty C ycle=0.5

0.2 0.1 0.1 0.05 0.02 S ingle P uls e 0.01 10

-4

P DM t1 1. 2. 3. 4. 10
-2

t2

R J A (t)=r (t) * R J A R J A =S ee Datas heet T J M-T A = P DM* R J A (t) Duty C ycle, D=t1/t2 10 100

10

-3

10

-1

S quare Wave P uls e Duration (s ec)

F igure 13. Normalized T hermal T rans ient Impedance C urve

S T M4532
PAC K AG E OUT LINE DIME NS IONS S O-8

1 L

E D
0.015X45

e
0.05 TYP.

0.016 TYP.

A1

0.008 TYP.

S Y MB OLS A A1 D E H L

MILLIME T E R S MIN 1.35 0.10 4.80 3.81 5.79 0.41 0 MAX 1.75 0.25 4.98 3.99 6.20 1.27 8 MIN 0.053 0.004 0.189 0.150 0.228 0.016 0

INC HE S MAX 0.069 0.010 0.196 0.157 0.244 0.050 8

10

S T M4532
SO-8 Tape and Reel Data
SO-8 Carrier Tape

unit:
PACKAGE SOP 8N 150 A0
6.40

B0
5.20

K0
2.10

D0
1.5 (MIN)

D1
1.5 + 0.1 - 0.0

E
12.0 0.3

E1
1.75

E2
5.5 0.05

P0
8.0

P1
4.0

P2
2.0 0.05

T
0.3 0.05

SO-8 Reel

UNIT:

TAPE SIZE
12

REEL SIZE
330

M
330 1

N
62 1.5

W
12.4 + 0.2

W1
16.8 - 0.4

H
12.75 + 0.15

S
2.0 0.15

11