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    5 X-Ray Lithography - 1

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    Rama Subramaniyan
    The document discusses the setup and advantages and limitations of proximity x-ray lithography. X-ray lithography uses soft x-rays with wavelengths of 10s of nanometers down to less than 1 angstrom, allowing for very fine features with vertical sidewalls and a large depth of focus. However, x-ray lithography has limitations including the difficulty of fabricating x-ray masks and finding strong, stable, collimated single-frequency x-ray sources. The resolution is also still limited by diffraction effects and scattering of secondary electrons in the resist.

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    5 X-Ray Lithography - 1

    Uploaded by

    Rama Subramaniyan
    24 views5 pages
    The document discusses the setup and advantages and limitations of proximity x-ray lithography. X-ray lithography uses soft x-rays with wavelengths of 10s of nanometers down to less than 1 angstrom, allowing for very fine features with vertical sidewalls and a large depth of focus. However, x-ray lithography has limitations including the difficulty of fabricating x-ray masks and finding strong, stable, collimated single-frequency x-ray sources. The resolution is also still limited by diffraction effects and scattering of secondary electrons in the resist.

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    5 X-ray Lithography_1 (1)

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    The document discusses the setup and advantages and limitations of proximity x-ray lithography. X-ray lithography uses soft x-rays with wavelengths of 10s of nanometers down to less than 1 angstrom, allowing for very fine features with vertical sidewalls and a large depth of focus. However, x-ray lithography has limitations including the difficulty of fabricating x-ray masks and finding strong, stable, collimated single-frequency x-ray sources. The resolution is also still limited by diffraction effects and scattering of secondary electrons in the resist.

    Copyright:

    © All Rights Reserved
    Download as PPTX, PDF, TXT or read online from Scribd
    Download as pptx, pdf, or txt
    24 views5 pages

    5 X-Ray Lithography - 1

    Uploaded by

    Rama Subramaniyan
    The document discusses the setup and advantages and limitations of proximity x-ray lithography. X-ray lithography uses soft x-rays with wavelengths of 10s of nanometers down to less than 1 angstrom, allowing for very fine features with vertical sidewalls and a large depth of focus. However, x-ray lithography has limitations including the difficulty of fabricating x-ray masks and finding strong, stable, collimated single-frequency x-ray sources. The resolution is also still limited by diffraction effects and scattering of secondary electrons in the resist.

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    © All Rights Reserved
    Download as PPTX, PDF, TXT or read online from Scribd
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    You are on page 1of 5

    Setup of proximity x-ray lithography

    Mask is made of absorber (Au) on membrane (Si3N4)

    X-ray lithography advantages

    Wavelength: 10s nm (soft x-rays) down to 1 (subatomic).

    Little diffraction effects when using such small .


    No backscatter or reflections: very fine features with vertical sidewalls. Very large depth of focus: wafer with non-flat surface is OK. Simpler (in principle) than optical or e-beam lithography: no complex optics (dont really have x-ray optics now). All that needed is an x-ray source and an x-ray mask.

    X-ray lithography limits


    1X mask technology because refractive index for all materials is (almost) absolutely 1.0 (no lens for demagnification). (4 for DUV lithography, mask easier to make) X-ray mask difficult to fabricate with many issues: fragile, defects, aspect ratio, bending due to heating. Strong, stable, collimated, single frequency x-ray sources are hard to find. X-rays produced in synchrotrons fit this criteria, but with high cost and huge size. Resolution is still limited by Fresnel diffraction and scattering of secondary electrons in the resist. Typical resist is insensitive, need long time to expose.

    w
    h Aspect ratio=pattern height/width=h/w.
    3

    Comparison to other lithographies


    Photolithography, diffraction limits resolution E-beam lithography (scattering, proximity effect)

    X-ray lithography, little diffraction, high depth of focus

    Ion beam lithography, low penetration depth (very thin resist)

    The physics of microfabrication, I. Brodie and J. J. Murray, Plenum Press, 1982

    X-ray lithography: resolution limit due to diffraction

    Precise gap must be maintained: too close will damage membrane mask, too far reduce resolution. Although is very small, diffraction still present. Resolution limit due to diffraction R=3/2[(g+t/2)]1/2, g: gap; t: resist thickness. (This is the same resolution equation as for photolithography) E.g. 100nm feature size requires =1nm, g=4.4m (assume t<<g).

    5 Cerrina, J Phys D, 2000

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