Semiconductor DF06: Technical Data
Semiconductor DF06: Technical Data
Semiconductor DF06: Technical Data
DF06
TECHNICAL DATA
FEATURES
[Unit:mm]
6.5
6.2
8.00
7.24
8.51
8.12
CHARACTERISTIC
SYMBOL
RATING
UNIT
VRRM
600
RMS voltage
VRMS
420
DC blocking voltage
VDC
600
IF(AV)
IFSM
50
I2t
10
A2sec
Tj, Tstg
-55~150
3.3
3.05
0.58
0.46
8.9
7.6
2.03
1.27
1.14
1.89
4.69
3.81
5.2
5.0
1.90
1.39
DF
3.3
0.22
Marking
Type Name
KDF06
Lot No.
Ta=25
SYMBOL
CONDITION
MAX
UNIT
100
IF=1A
IR
VR=600V
CJ
VR=4.0V, f=1.0MHz
25
Junction to ambient
40
Junction to lead
15
Rth(A)
(Note1)
Thermal resistance
TYP
VF
Ta=125
Junction capacitance
MIN
Rth(L)
(Note1)
A
pF
/W
Note 1) Thermal resistance from junction to ambient and from junction to lead mounted
on P.C.B with (13 13mm) copper pads.
2005. 6. 1
Revision No : 0
1/2
DF06
1.0
60Hz
RESISTIVE OR
INDUCTIVE LOAD
0.5
P.C.B MOUNTED ON
0.51 0.51"(1313mm)
COPPER PADS WITH
0.06"(1.5mm)LEAD LENGTH
20
40
60
80
100
120
T J = 150 C
Single sine-wave
(JEDEC Method)
50
40
30
1.0 Cycle
20
10
0
1
140 150
10
Ambient Temperature ( C)
10
0.1
T J = 25 C
Pulse Width=300ms
1% Duty Cycle
0.4
0.6
0.8
1.0
1.2
1.4
0.01
100
T J =125 C
10
0.01
0
T J = 25 C
f=1.0MHz
Vsing=50mVp-p
10
2005. 6. 1
Revision No : 0
40
60
80
100
100
100
20
10
Tj=2 5 C
0.1
100
100
10
0.1
0.01
0.1
10
100
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