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    NPN Silicon RF Power Transistor: Description: C1-12 Package Style .280 4L Pill

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    bbchacin
    This document summarizes the specifications and features of the C1-12 NPN silicon RF power transistor. It is designed for a 12.5 volt supply and applications between 450-512 MHz. Key features include a typical power gain of 11 dB at 1.1 watts and 470 MHz, and typical power efficiency of 65% at 1.1 watts and 470 MHz. The document provides maximum ratings, package dimensions, electrical characteristics, and manufacturer information.

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    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd

    NPN Silicon RF Power Transistor: Description: C1-12 Package Style .280 4L Pill

    Uploaded by

    bbchacin
    35 views1 page
    This document summarizes the specifications and features of the C1-12 NPN silicon RF power transistor. It is designed for a 12.5 volt supply and applications between 450-512 MHz. Key features include a typical power gain of 11 dB at 1.1 watts and 470 MHz, and typical power efficiency of 65% at 1.1 watts and 470 MHz. The document provides maximum ratings, package dimensions, electrical characteristics, and manufacturer information.

    Original Description:

    IC Radiofrecuencia

    Original Title

    c1-12

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    © © All Rights Reserved

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    This document summarizes the specifications and features of the C1-12 NPN silicon RF power transistor. It is designed for a 12.5 volt supply and applications between 450-512 MHz. Key features include a typical power gain of 11 dB at 1.1 watts and 470 MHz, and typical power efficiency of 65% at 1.1 watts and 470 MHz. The document provides maximum ratings, package dimensions, electrical characteristics, and manufacturer information.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    35 views1 page

    NPN Silicon RF Power Transistor: Description: C1-12 Package Style .280 4L Pill

    Uploaded by

    bbchacin
    This document summarizes the specifications and features of the C1-12 NPN silicon RF power transistor. It is designed for a 12.5 volt supply and applications between 450-512 MHz. Key features include a typical power gain of 11 dB at 1.1 watts and 470 MHz, and typical power efficiency of 65% at 1.1 watts and 470 MHz. The document provides maximum ratings, package dimensions, electrical characteristics, and manufacturer information.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 1

    C1-12

    NPN SILICON RF POWER TRANSISTOR


    DESCRIPTION:
    The C1-12 is Designed for 12.5 Volt
    supply. Applications from 450 to 512
    MHz.

    PACKAGE STYLE .280 4L PILL


    A

    FEATURES:

    PG = 11 dB Typ. at 1.1 W/470 MHz


    C = 65 % Typ. at 1.1 W/470 MHz
    Omnigold Metalization System

    B
    E

    MAXIMUM RATINGS
    D

    250 mA

    IC

    VCBO

    36 V

    VCEO

    28 V

    DIM

    MINIMUM
    inches / mm

    inches / mm

    .220 / 5.59

    .230 / 5.84

    MAXIMUM

    VEBO

    4.0 V

    PDISS

    5.0 W @ TC = 25 C

    .275 / 6.99

    .285 / 7.24

    .004 / 0.10

    .006 / 0.15

    TJ

    -65 C to +200 C

    .050 / 1.27

    .060 . 1.52

    .118 / 3.00

    .130 / 3.30

    TSTG

    -65 C to +150 C

    JC

    35 C/ W

    1.055 / 26.80

    CHARACTERISTICS

    ORDER CODE: ASI

    TC = 25 C

    NONETEST CONDITIONS

    SYMBOL

    MINIMUM TYPICAL MAXIMUM

    UNITS

    BVCBO

    IC = 5.0 mA

    14.5

    BVCES

    IC = 5.0 mA

    37

    BVEBO

    IE = 5.0 mA

    4.0

    hFE

    VCE = 6.0 V

    COB

    VCB = 12 V

    PG
    C

    VCE = 12.5 V

    IC = 100 mA

    10
    f = 1.0 MHz

    POUT = 1.1 W

    f = 470 MHz

    100

    ---

    3.0

    pF

    11

    dB
    %

    65

    Pin = 0.1 W

    A D V A N C E D S E M I C O N D U C T O R, I N C.
    7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004
    Specifications are subject to change without notice.

    REV. 0

    1/1

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