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    Technical Data: Low Power NPN Silicon Transistor

    Uploaded by

    Kadu92
    This document provides technical specifications for several low power NPN silicon transistor models, including maximum ratings, electrical characteristics, and safe operating area parameters. The transistors - models 2N3019, 2N3019S, 2N3057A, 2N3700, and 2N3700UB - are qualified per military specification MIL-PRF-19500/391. Key specifications listed include maximum collector-emitter voltage, current, power dissipation, and operating temperature range. Electrical characteristics such as breakdown voltages, current transfer ratio, saturation voltages, and capacitances are also specified.

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    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd

    Technical Data: Low Power NPN Silicon Transistor

    Uploaded by

    Kadu92
    30 views2 pages
    This document provides technical specifications for several low power NPN silicon transistor models, including maximum ratings, electrical characteristics, and safe operating area parameters. The transistors - models 2N3019, 2N3019S, 2N3057A, 2N3700, and 2N3700UB - are qualified per military specification MIL-PRF-19500/391. Key specifications listed include maximum collector-emitter voltage, current, power dissipation, and operating temperature range. Electrical characteristics such as breakdown voltages, current transfer ratio, saturation voltages, and capacitances are also specified.

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    datasheet

    Original Title

    2n3019

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    This document provides technical specifications for several low power NPN silicon transistor models, including maximum ratings, electrical characteristics, and safe operating area parameters. The transistors - models 2N3019, 2N3019S, 2N3057A, 2N3700, and 2N3700UB - are qualified per military specification MIL-PRF-19500/391. Key specifications listed include maximum collector-emitter voltage, current, power dissipation, and operating temperature range. Electrical characteristics such as breakdown voltages, current transfer ratio, saturation voltages, and capacitances are also specified.

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    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    30 views2 pages

    Technical Data: Low Power NPN Silicon Transistor

    Uploaded by

    Kadu92
    This document provides technical specifications for several low power NPN silicon transistor models, including maximum ratings, electrical characteristics, and safe operating area parameters. The transistors - models 2N3019, 2N3019S, 2N3057A, 2N3700, and 2N3700UB - are qualified per military specification MIL-PRF-19500/391. Key specifications listed include maximum collector-emitter voltage, current, power dissipation, and operating temperature range. Electrical characteristics such as breakdown voltages, current transfer ratio, saturation voltages, and capacitances are also specified.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 2

    TECHNICAL DATA

    LOW POWER NPN SILICON TRANSISTOR


    Qualified per MIL-PRF-19500/391
    Devices
    2N3019
    2N3019S

    2N3057A

    MAXIMUM RATINGS
    Ratings
    Collector-Emitter Voltage
    Collector-Base Voltage
    Emitter-Base Voltage
    Collector Current
    Total Power Dissipation
    @ TA = +250C(1)
    2N3019; 2N3019S
    2N3057A
    2N3700
    2N3700UB
    @ TC = +250C(2)
    2N3019; 2N3019S
    2N3057A
    2N3700
    2N3700UB
    Operating & Storage Jct Temp Range
    1)

    2)

    Qualified Level
    JAN
    JANTX
    JANTXV
    JANS

    2N3700
    2N3700S

    Symbol

    Value

    Units

    VCEO
    VCBO
    VEBO
    IC

    80
    140
    7.0
    1.0

    Vdc
    Vdc
    Vdc
    Adc

    PT

    0.8
    0.4
    0.5
    0.4

    TJ, Tstg

    5.0
    1.8
    1.8
    1.16
    -55 to +175

    TO-39* (TO-205AD)
    2N3019, 2N3019S

    TO- 18* (TO-206AA)


    2N3700
    W

    TO-46* (TO-206AB)
    2N3057A

    Derate linearly 4.6 mW/0C for type 2N3019 and 2N3019S; 2.3 mW/0C for type 2N3057A;
    2.85 mW/0C for type 2N3700; 6.6 mW/0C for type 2N3700UB for TA +250C.
    Derate linearly 28.6 mW/0C for type 2N3019 and 2N3019S;
    10.3 mW/0C for types 2N3057A, 2N3700, & 2N3700UB for TC +250C.

    3 PIN SURFACE MOUNT*


    2N3700UB
    *See appendix A for package
    outline

    ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted)


    Characteristics

    Symbol

    Min.

    Max.

    Unit

    V(BR)CBO

    140

    Vdc

    V(BR)EBO

    7.0

    Vdc

    V(BR)CEO

    80

    Vdc

    OFF CHARACTERISTICS
    Collector-Base Breakdown Voltage
    IC = 100 Adc
    Emitter-Base Breakdown Voltage
    IE = 100 Adc
    Collector-Emitter Breakdown Current
    IC = 30 mAdc

    6 Lake Street, Lawrence, MA 01841


    1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803

    120101
    Page 1 of 2

    2N3019, 2N3019S, 2N3057A, 2N3700, 2N3700UB JAN SERIES

    ELECTRICAL CHARACTERISTICS (cont)


    Characteristics

    Symbol

    Min.

    Max.

    Unit

    ICES

    10

    Adc

    IEBO

    10

    Adc

    OFF CHARACTERISTICS (cont)


    Collector-Emitter Cutoff Current
    VCE = 90 Vdc
    Emitter-Base Cutoff Current
    VEB = 5.0 Vdc

    ON CHARACTERISTICS (1)
    Forward-Current Transfer Ratio
    IC = 150 mAdc, VCE = 10 Vdc
    IC = 0.1 mAdc, VCE = 10 Vdc
    IC = 10 mAdc, VCE = 10 Vdc
    IC = 500 mAdc, VCE = 10 Vdc
    IC = 1.0 Adc, VCE = 10 Vdc
    Collector-Emitter Saturation Voltage
    IC = 150 mAdc, IB = 15 mAdc
    IC = 500 mAdc, IB = 50 mAdc
    Base-Emitter Saturation Voltage
    IC = 150 mAdc, IB = 15 mAdc

    hFE

    100
    50
    90
    50
    15

    300
    200
    200

    VCE(sat)

    0.2
    0.5

    Vdc

    VBE(sat)

    1.1

    Vdc

    DYNAMIC CHARACTERISTICS
    Small-Signal Short-Circuit Forward Current Transfer Ratio
    IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz
    Magnitude of Small-Signal Short-Circuit
    Forward Current Transfer Ratio
    IC = 50 mAdc, VCE = 10 Vdc, f = 20 MHz
    Output Capacitance
    VCB = 10 Vdc, IE = 0, 100 kHz f 1.0 MHz
    Input Capacitance
    VEB = 0.5 Vdc, IC = 0, 100 kHz f 1.0 MHz

    hfe

    hfe

    80

    400

    5.0

    20

    Cobo

    12

    Cibo

    60

    pF

    SAFE OPERATING AREA


    DC Tests
    TC = 250C, 1 Cycle, t = 10 ms
    Test 1
    2N3019, 2N3019S
    2N3057A, 2N3700, 2N3700UB

    VCE = 10 Vdc
    IC = 500 mAdc
    IC = 180 mAdc

    Test 2
    2N3019, 2N3019S
    2N3057A, 2N3700, 2N3700UB

    VCE = 40 Vdc
    IC = 125 mAdc
    IC = 45 mAdc

    Test 3
    VCE = 80 Vdc
    2N3019, 2N3019S
    IC = 60 mAdc
    2N3057A, 2N3700, 2N3700UB
    IC = 22.5 mAdc
    (1) Pulse Test: Pulse Width = 300s, Duty Cycle 2.0%.

    6 Lake Street, Lawrence, MA 01841


    1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803

    120101
    Page 2 of 2

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