Location via proxy:   [ UP ]  
[Report a bug]   [Manage cookies]                
Scribd Logo
Upload

Welcome to Scribd!

  • 13 views

    2n2222a 001

    Uploaded by

    Ruben Villarreal Pantoja
    This document provides specifications for the 2N2222A transistor, including: - Dimensions and pinout of the TO-18 metal package. - Absolute maximum ratings for voltage, current, power dissipation and temperature. - Electrical characteristics including gain, capacitance, leakage currents and switching times. - The 2N2222A is described as a high speed, medium power NPN switching transistor made using silicon planar epitaxial technology. It is suitable for use in circuits requiring fast switching.

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as PDF, TXT or read online from Scribd

    2n2222a 001

    Uploaded by

    Ruben Villarreal Pantoja
    13 views3 pages
    This document provides specifications for the 2N2222A transistor, including: - Dimensions and pinout of the TO-18 metal package. - Absolute maximum ratings for voltage, current, power dissipation and temperature. - Electrical characteristics including gain, capacitance, leakage currents and switching times. - The 2N2222A is described as a high speed, medium power NPN switching transistor made using silicon planar epitaxial technology. It is suitable for use in circuits requiring fast switching.

    Original Title

    2N2222A-001

    Copyright

    © Attribution Non-Commercial (BY-NC)

    Available Formats

    PDF, TXT or read online from Scribd

    Did you find this document useful?

    Is this content inappropriate?

    This document provides specifications for the 2N2222A transistor, including: - Dimensions and pinout of the TO-18 metal package. - Absolute maximum ratings for voltage, current, power dissipation and temperature. - Electrical characteristics including gain, capacitance, leakage currents and switching times. - The 2N2222A is described as a high speed, medium power NPN switching transistor made using silicon planar epitaxial technology. It is suitable for use in circuits requiring fast switching.

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    13 views3 pages

    2n2222a 001

    Uploaded by

    Ruben Villarreal Pantoja
    This document provides specifications for the 2N2222A transistor, including: - Dimensions and pinout of the TO-18 metal package. - Absolute maximum ratings for voltage, current, power dissipation and temperature. - Electrical characteristics including gain, capacitance, leakage currents and switching times. - The 2N2222A is described as a high speed, medium power NPN switching transistor made using silicon planar epitaxial technology. It is suitable for use in circuits requiring fast switching.

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 3

    LAB

    MECHANICAL DATA Dimensions in mm (inches)


    5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178)

    SEME

    2N2222A

    HIGH SPEED MEDIUM POWER, NPN SWITCHING TRANSISTOR


    5.33 (0.210) 4.32 (0.170)

    FEATURES
    SILICON PLANAR EPITAXIAL NPN TRANSISTOR HIGH SPEED SATURATED SWITCHING ALSO AVAILABLE IN CERAMIC SURFACE MOUNT PACKAGE

    0.48 (0.019) 0.41 (0.016) dia.

    2.54 (0.100) Nom.

    3 2

    TO18 METAL PACKAGE


    Underside View PIN 1 Emitter PIN 2 Base PIN 3 Collector

    ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise stated)


    VCBO VCEO VEBO IC PD PD TJ , TSTG Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range 75V 40V 6V 800mA 0.5mW 2.28mW / C 1.2W 6.85mW / C 65 to +200C
    Prelim. 3/96

    Semelab plc.

    Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.

    12.7 (0.500) min.

    LAB
    ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise stated)
    Parameter
    V(BR)CEO V(BR)CBO V(BR)EBO ICEX ICBO IEBO IBL OFF CHARACTERISTICS Collector Emitter Sustaining Voltage Collector Base Breakdown Voltage Emitter Base Breakdown Voltage Collector Cut-off Current Collector Base Cut-off Current Emitter Cut-off Current (IC = 0) Base Current ON CHARACTERISTICS VCE(sat)1 VBE(sat)1 Collector Emitter Saturation Voltage Base Emitter Saturation Voltage IC = 150mA IC = 500mA IC = 150mA IC = 500mA IC = 0.1mA IC = 1mA IC = 10mA hFE DC Current Gain IC = 150mA IC = 150mA IC = 500mA fT Cob Cib hfe SMALL SIGNAL CHARACTERISTICS Transition Frequency 2 IC = 20mA Output Capacitance Input Capacitance Small Signal Current Gain VCB = 10V VEB = 0.5V IC = 1mA IC = 10mA VCE = 20V IE = 0 IC = 0 VCE = 10V VCE = 10V IB = 15mA IB = 50mA IB = 15mA IC = 50mA VCE = 10V VCE = 10V VCE = 10V TA = 55C VCE = 10V 1 VCE = 1V VCE = 10V
    1 1

    SEME

    2N2222A

    Test Conditions
    IC = 10mA IC = 10A IE = 10A VCE = 60V IE = 0 IC = 0 VCE = 60V IB = 0 IE = 0 IC = 0 VEB(off) = 3V VCB = 60V TA = 150C VEB = 3V VEB(off) = 3V

    Min.
    40 75 6

    Typ.

    Max. Unit
    V

    V V 10 0.01 10 10 20 0.3 1 nA A nA nA

    V V

    0.6 35 50 75 35 100 50 40 300

    1.2 2

    300

    f = 100MHz f = 100kHz f = 100kHz f = 1kHz f = 1kHz

    MHz 8 25 pF

    50 75

    300 375 10 25 225 60

    td tr ts tf

    SWITCHING CHARACTERISTICS Delay Time VCC = 30V Rise Time Storage Time Fall Time IC = 150mA VCC = 30V

    VBE(off) = 0.5V IB1 = 15mA IC = 150mA IB1 = IB2 = 15mA

    ns ns

    NOTES:
    1) Pulse test: tp 300s , 2% 2) fT is defined as the frequency at which hFE extrapolates to unity.

    Semelab plc.

    Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.

    Prelim. 3/96

    This datasheet has been download from: www.datasheetcatalog.com Datasheets for electronics components.

    You might also like