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    Bup 212

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    Стоян Банчев
    This document provides specifications and characteristics for an IGBT (insulated-gate bipolar transistor) chip called the BUP 212. The summary is: 1. The BUP 212 is rated for a maximum collector-emitter voltage of 1200V and can handle continuous currents of up to 22A at 25°C and 16A at 110°C. 2. It has low forward voltage drop, high switching speeds, low tail current, is latch-up free and avalanche rated. 3. The document provides detailed electrical characteristics, switching times, safe operating areas, output and transfer characteristics as well as maximum ratings for the BUP 212 IGBT chip in both table and graph form.

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as PDF, TXT or read online from Scribd

    Bup 212

    Uploaded by

    Стоян Банчев
    67 views8 pages
    This document provides specifications and characteristics for an IGBT (insulated-gate bipolar transistor) chip called the BUP 212. The summary is: 1. The BUP 212 is rated for a maximum collector-emitter voltage of 1200V and can handle continuous currents of up to 22A at 25°C and 16A at 110°C. 2. It has low forward voltage drop, high switching speeds, low tail current, is latch-up free and avalanche rated. 3. The document provides detailed electrical characteristics, switching times, safe operating areas, output and transfer characteristics as well as maximum ratings for the BUP 212 IGBT chip in both table and graph form.

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    bup212

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    This document provides specifications and characteristics for an IGBT (insulated-gate bipolar transistor) chip called the BUP 212. The summary is: 1. The BUP 212 is rated for a maximum collector-emitter voltage of 1200V and can handle continuous currents of up to 22A at 25°C and 16A at 110°C. 2. It has low forward voltage drop, high switching speeds, low tail current, is latch-up free and avalanche rated. 3. The document provides detailed electrical characteristics, switching times, safe operating areas, output and transfer characteristics as well as maximum ratings for the BUP 212 IGBT chip in both table and graph form.

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    67 views8 pages

    Bup 212

    Uploaded by

    Стоян Банчев
    This document provides specifications and characteristics for an IGBT (insulated-gate bipolar transistor) chip called the BUP 212. The summary is: 1. The BUP 212 is rated for a maximum collector-emitter voltage of 1200V and can handle continuous currents of up to 22A at 25°C and 16A at 110°C. 2. It has low forward voltage drop, high switching speeds, low tail current, is latch-up free and avalanche rated. 3. The document provides detailed electrical characteristics, switching times, safe operating areas, output and transfer characteristics as well as maximum ratings for the BUP 212 IGBT chip in both table and graph form.

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 8

    BUP 212

    IGBT

    Low forward voltage drop High switching speed Low tail current Latch-up free Avalanche rated Pin 1 G Type BUP 212 Maximum Ratings Parameter Collector-emitter voltage Emitter-collector voltage Collector-gate voltage Symbol Values 1200 Unit V Pin 2 C Ordering Code Q67040-A . . . . . Pin 3 E

    VCE

    IC

    Package TO-220 AB

    1200V 22A

    VCE VEC VCGR

    RGE = 20 k
    Gate-emitter voltage DC collector current

    1200

    VGE IC

    20 A 22 8

    TC = 25 C TC = 110 C
    Pulsed collector current, tp = 1 ms

    ICpuls
    44 16

    TC = 25 C TC = 110 C
    Avalanche energy, single pulse

    EAS
    10

    mJ

    IC = 8 A, VCC = 50 V, RGE = 25 L = 300 H, Tj = 25 C


    Power dissipation

    Ptot
    125

    W -55 ... + 150 -55 ... + 150 C

    TC = 25 C
    Chip or operating temperature Storage temperature

    Tj Tstg

    Semiconductor Group

    May-05-1997

    BUP 212

    Maximum Ratings Parameter DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Thermal Resistance Thermal resistance, chip case Symbol Values E 55 / 150 / 56 Unit -

    RthJC

    K/W

    Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Symbol min. Static Characteristics Gate threshold voltage Values typ. max. Unit

    VGE(th)
    4.5 5.5 2.5 3.1 3.4 4.3 6.5 3 3.7 -

    VGE = VCE, IC = 0.3 mA, Tj = 25 C


    Collector-emitter saturation voltage

    VCE(sat)
    -

    VGE = 15 V, IC = 8 A, Tj = 25 C VGE = 15 V, IC = 8 A, Tj = 125 C VGE = 15 V, IC = 16 A, Tj = 25 C VGE = 15 V, IC = 16 A, Tj = 125 C


    Zero gate voltage collector current

    ICES
    0.4

    mA nA 120

    VCE = 1200 V, VGE = 0 V, Tj = 25 C


    Gate-emitter leakage current

    IGES

    VGE = 25 V, VCE = 0 V
    AC Characteristics Transconductance

    gfs
    4 5 600 60 38 -

    S pF 800 90 55

    VCE = 20 V, IC = 8 A
    Input capacitance

    Ciss Coss
    -

    VCE = 25 V, VGE = 0 V, f = 1 MHz


    Output capacitance

    VCE = 25 V, VGE = 0 V, f = 1 MHz


    Reverse transfer capacitance

    Crss
    -

    VCE = 25 V, VGE = 0 V, f = 1 MHz

    Semiconductor Group

    May-05-1997

    BUP 212

    Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Symbol min. Switching Characteristics, Inductive Load at Tj = 125 C Turn-on delay time Values typ. max. Unit

    td(on)
    55 110

    ns

    VCC = 600 V, VGE = 15 V, IC = 8 A RGon = 150


    Rise time

    tr
    50 100

    VCC = 600 V, VGE = 15 V, IC = 8 A RGon = 150


    Turn-off delay time

    td(off)
    380 570

    VCC = 600 V, VGE = -15 V, IC = 8 A RGoff = 150


    Fall time

    tf
    80 120

    VCC = 600 V, VGE = -15 V, IC = 8 A RGoff = 150

    Semiconductor Group

    May-05-1997

    BUP 212

    Power dissipation Ptot = (TC) parameter: Tj 150 C


    130 W 110

    Collector current IC = (TC) parameter: VGE 15 V , Tj 150 C


    26 A 22

    Ptot

    100 90 80 70 60 50 40 30 20 10 0 0 20 40 60 80 100 120 C 160

    IC

    20 18 16 14 12 10 8 6 4 2 0 0 20 40 60 80 100 120 C 160

    TC

    TC

    Safe operating area IC = (VCE) parameter: D = 0, TC = 25C , Tj 150 C


    10 2
    tp = 13.0s

    Transient thermal impedance Zth JC = (tp) parameter: D = tp / T


    10 1

    IGBT

    K/W

    IC
    10 1
    100 s

    ZthJC

    10 0

    10 -1 D = 0.50 0.20 10 0
    1 ms

    0.10 10 -2 single pulse


    10 ms

    0.05 0.02 0.01

    10

    -1

    10

    10

    10

    DC 3 10

    10 -3 -5 10

    10

    -4

    10

    -3

    10

    -2

    10

    -1

    s 10

    VCE

    tp

    Semiconductor Group

    May-05-1997

    BUP 212

    Typ. output characteristics

    Typ. output characteristics

    IC = f (VCE) parameter: tp = 80 s, Tj = 25 C
    20 A

    IC = f (VCE) parameter: tp = 80 s, Tj = 125 C


    20 A

    IC

    16 14 12 10 8 6 4 2 0 0

    17V 15V 13V 11V 9V 7V

    IC

    16 14 12 10 8 6 4 2 0 0

    17V 15V 13V 11V 9V 7V

    VCE

    VCE

    Typ. transfer characteristics

    IC = f (VGE)
    parameter: tp = 80 s, VCE = 20 V
    25 A 22

    IC

    20 18 16 14 12 10 8 6 4 2 0 0 2 4 6 8 10 V 14 VGE

    Semiconductor Group

    May-05-1997

    BUP 212

    Typ. switching time

    Typ. switching time

    t = f (IC) , inductive load , Tj = 125C


    par.:VCE=600V, VGE = 15V, RG =153
    10 3

    t = f (RG) , inductive load , Tj = 125C par.:VCE=600V, VGE = 15V, IC =8 A


    10 3 tdoff

    ns

    tdoff

    ns

    10 2

    tr tf tdon

    10 2

    tf tdon tr

    10 1 0

    12

    16

    20

    24

    A IC

    30

    10 1 0

    50 100 150 200 250 300 350 400

    RG

    500

    Typ. switching losses

    Typ. switching losses

    E = f (IC) , inductive load , Tj = 125C


    par.:VCE=600V, VGE = 15V, RG =153
    10 mWs E 8 7 6 5 4 3 2 Eoff 1 0 0 Eon

    E = f (RG) , inductive load , Tj = 125C par.:VCE=600V, VGE = 15V, IC =8 A


    10 mWs E 8 7 6 5 4 3 Eon 2 1 Eon

    12

    16

    20

    24

    30

    IC

    0 0

    50 100 150 200 250 300 350 400

    RG

    500

    Semiconductor Group

    May-05-1997

    BUP 212

    Typ. gate charge VGE = (QGate) parameter: IC puls = 15 A


    20 V

    Typ. capacitances

    C = f (VCE)

    10 4

    pF

    VGE

    16 14 12 10 8

    C 600 V 800 V
    10 3

    Ciss

    10 2 6

    Coss
    4 2 0 0 10 1 0

    Crss

    10

    20

    30

    40

    50

    60

    70

    80

    nC 100

    10

    15

    20

    25

    30

    QGate

    V 40 VCE

    Short circuit safe operating area

    Reverse biased safe operating area

    ICsc = f (VCE) , Tj = 150C parameter: VGE = 15 V, tsc 10 s, L < 25 nH


    10

    ICpuls = f (VCE) , Tj = 150C parameter: VGE = 15 V


    2.5

    ICsc/IC(90C)

    ICpuls/IC

    1.5

    1.0

    0.5

    0 0 200 400 600 800 1000 1200 V 1600 VCE

    0.0 0 200 400 600 800 1000 1200 V 1600 VCE

    Semiconductor Group

    May-05-1997

    This datasheet has been download from: www.datasheetcatalog.com Datasheets for electronics components.

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